TADF激基复合物主体材料提升溶液法制备蓝色荧光有机发光二极管的效率

为了提升溶液法制备的蓝色荧光有机发光二极管(OLEDs)的效率,采用了基于热激活延迟发光(TADF)的激基复合物作为主体材料。TADF激基复合物主体可以利用反向系间窜跃上转换形成单线态激子并将能量传递到客体,从而可以同时利用发光层中的三线态激子和单线态激子,以提升蓝色荧光器件的效率。选择蓝色荧光材料1-4-Di-[4-(N,N-diphenyl)amino]styryl-benzene(DSA-ph)作为客体发光材料,4,4′,4″-T-ris(carbazol-9-yl)triphenylamine(TCTA)掺杂1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)(TPBi)作为热激活延迟荧光激基复合物主体,通过溶液法制备了蓝色荧光OLEDs。通过测试TCTA,TPBi以及TCTA掺杂TPBi的光致发光光谱发现,与TCTA和TPBi相比,TCTA掺杂TPBi的光致发光谱(PL)发生了明显的红移(峰值波长变为437 nm),而且光谱变宽,证明了TCTA∶TPBi激基复合物的形成。通过对于DSA-ph掺杂激基复合物主体的薄膜与DSA-ph掺杂poly(methyl methacrylate)(PMMA)的薄膜进行PL测试发现,两者发光峰相同,都是来自DSA-ph的发光,说明激基复合物主体将能量传递到了DSA-ph;DSA-ph的吸收光谱与激基复合物主体的PL光谱存在很大重叠,说明激基复合物主体与DSA-ph的能量传递非常有效;通过对激基复合物主体掺杂不同浓度客体的薄膜进行瞬态PL衰减测试发现,与纯DSA-ph的寿命相比,DSA-ph掺杂激基复合物主体之后其寿命会延长,纯DSA-ph的寿命只有1.19 ns,DSA-ph掺杂激基复合物主体的荧光衰减曲线与激基复合物主体的荧光衰减曲线相似,这进一步证明了激基复合物主体将能量传递到了DSA-ph。研究了主体引入以及DSA-ph掺杂浓度对器件性能的影响。对于器件的亮度、电流密度、电压、电流效率、电致发光光谱等参数进行了测试,与不采用激基复合物主体的器件相比,采用激基复合物主体的器件性能明显改善,在DSA-ph掺杂浓度为10%时,器件亮度从2133.6 cd·m^-2提升到了3597.6 cd·m^-2,器件效率从1.44 cd·A-1提升到了3.15 cd·A-1,发光峰只有来自DSA-ph的发光。采用TADF激基复合物主体的方法有潜力实现溶液法制备的高效蓝色荧光OLEDs。     

Spectral distributions of harmonic generation from electron oscillation driven by intense femtosecond laser pulses

The characteristics of harmonic radiation due to electron oscillation driven by an intense femtosecond laser pulse are analyzed considering a single electron model. An interesting modulated structure of the spectrum is observed and analyzed for different polarization. Higher order harmonic radiations are possible for a sufficiently intense driving laser pulse. We have shown that for a realistic pulsed photon beam, the spectrum of the radiation is red shifted as well as broadened because of changes in the longitudinal velocity of the electrons during the laser pulse. These effects are more pronounced at higher laser intensities giving rise to higher order harmonics that eventually leads to a continuous spectrum. Numerical simulations have further shown that by increasing the laser pulse width broadening of the high harmonic radiations can be limited.     

Hydrothermal synthesis of Er-doped yttria nanorods with enhanced red emission via upconversion

(Y_0.95Er_0.05)₂O₃ single-crystalline nanorods with intense red emission via up-conversion are synthesized by a hydrothermal method under modest reaction conditions. Green and red emissions are observed for both as-synthesized sample and post-treated sample after excitation at 488 nm and with upconversion pumping (810 nm). The experimental results indicate that the stokes and up-conversion luminescence of the post-treated (500 °C for 2 h) Y₂O₃:Er nanorods is more efficient than those of as-prepared materials. The increase of the Stokes luminescence may result from the improved crystallization, smooth surface and uniform diameter distribution. The enhanced red emission via upconversion is due to removal of part of surface contaminants, such as CO₃²⁻ and OH⁻. It is believed that a new mechanism is responsible for populating the ⁴S_3/2 and ⁴F_9/2 levels.     

Optical investigation of the red band emission of CdS nanoparticles

Cadmium sulfide (CdS) nanoparticles, with different Cd/S molar ratios, were chemically produced and characterized in this study. High quality CdS nanoparticles were grown in the hexagonal phase, as indicated by X-ray diffraction data and Raman spectroscopy. Photoluminescence was used to investigate the surface effects caused by submitting the nanoparticle-based samples at different laser treatments and vacuum pressure.     

常见场致发射阴极材料的发射特性

利用三阴极加速器平台,对不锈钢、黄铜、铝、天鹅绒和石墨等几种常见场致发射材料的电流发射能力、相对启动延迟时间及其抖动进行了实验研究。实验结果表明：在二极管电压近似恒定时,不锈钢阴极启动时间延迟抖动小于8 ns,天鹅绒阴极及石墨阴极启动时间延迟抖动小于4 ns;且材料在阴极频繁工作时启动时间加快;常见金属材料中不锈钢阴极的综合性能较好;非金属材料中,天鹅绒阴极的发射能力最强,且发射延迟时间最短,但考虑到天鹅绒材料严重的出气问题,非金属材料中以石墨阴极的性能为优。     

Enhanced blue emission of ZnO films deposited on AlN substrates

Taking into account the individual excellent optical properties of ZnO and AlN, the combination of ZnO with AlN may give the enhanced performances. Based on similar lattice constants between ZnO and AlN, considering that AlN is a promising high power integrated circuit substrate material, ZnO films are deposited on AlN substrates using magnetron sputtering. We find that AlN substrate shows an excellent transparency with an average transmittance of about 80%. As ZnO films are deposited on AlN substrate, average transmittance still maintain above 80% except for the UV absorption edge shifted to the longer wavelength. In addition, AlN substrate shows two emission peaks at 420 and 468 nm ascribed to Al vacancies with different charge states. As ZnO films are deposited on AlN substrates in pure Ar gas, the intensity of both peaks attain the maximum. After introducing O₂ gas, they conversely decreases and attains the minimum. PL emissions increase again as the sample is annealed in vacuum. Excellent blue emissions are obtained due to the synergistic effect between ZnO and AlN. This work may help the development of the practical optoelectronic devices based on ZnO and AlN materials.     

光谱法测量等离子体离子温度和旋转速度

分析多普勒展宽和多普勒频移的区别，讨论了弦积分的线形分布和高斯分布的差异，利用光谱多道分析仪测量了碳227．1nm谱线的线形分布，通过选点拟合得出辐射粒子的离子温度和旋转速度径向分布。     

Quantitative analysis of UV excitation bands for red emissions in Pr-doped CaTiO3, SrTiO3 and BaTiO3 phosphors by peak fitting

A quantitative spectral analysis of the ultraviolet (UV) broad excitation bands, which are located in the range 300-400 nm, for red emissions at around 610 nm in Pr-doped CaTiO₃, SrTiO₃:Al and BaTiO₃:Mg phosphors has been carried out using a peak fitting technique. The obtained results demonstrate that the UV broad band of CaTiO₃:Pr consists of four primary excitation bands centered around 330, 335, 365 and 380 nm and those of both SrTiO₃:Al and BaTiO₃:Mg consist of three primary bands centered around 310, 345 and 370 nm. Based on the behavior patterns and the values of the respective primary excitation bands’ parameters, i.e. center gravity (λ_top), maximum height (I_max) and full-width at half-maximum (FWHM), the UV-to-red relaxation processes in these titanate phosphors can be explained to be essentially the same, except for the existence of an additional relaxation pathway via electron-trap states in CaTiO₃:Pr, which gives a characteristic shape of its UV excitation spectrum in the wavelength range of >360 nm.     

Modified electrodes for the atomic emission analysis of powder materials

To control the vaporization conditions of the sample components of powder materials in electrical light sources, two modifications of the shapes of graphite electrodes are suggested. Their specific features and analytical application are considered. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 534–535, July–August, 2000.     

Annealing and amorphous silicon passivation of porous silicon with blue light emission

The photoluminescence (PL) of the annealed and amorphous silicon passivated porous silicon with blue emission has been investigated. The N-type and P-type porous silicon fabricated by electrochemical etching was annealed in the temperature range of 700-900 °C, and was coated with amorphous silicon formed in a plasma-enhanced chemical vapor deposition (PECVD) process. After annealing, the variation of PL intensity of N-type porous silicon was different from that of P-type porous silicon, depending on their structure. It was also found that during annealing at 900 °C, the coated amorphous silicon crystallized into polycrystalline silicon, which passivated the irradiative centers on the surface of porous silicon so as to increase the intensity of the blue emission.     

Spontaneous emission of two quantum dots in a single-mode cavity

The spontaneous emission spectrum from two quantum dots （QDs） that are strongly coupled with a single-mode nanocavity is investigated using rigorous numerical calculations and simple analytical solutions of quantum dynamics. The emission spectra both from the side and along the axis of the cavity are considered. Modification of two parameters, the coupling strength and the detuning between the transition frequencies of the two quantum dots, allows us to efficiently control the shape of the spontaneous emission spectrum. Different profiles and their physical origins can be well understood in the dressed-state picture for the light-QD interaction in the on-resonance and off-resonance situations. In the on-resonance situation, the emission spectra exhibit symmetric features, and they are not altered by the asymmetry in the coupling pa- rameters. The axis spectra show two emission peaks while the side spectra have three emission peaks. In the off-resonance situation, the emission spectra always show an asymmetrical three-peak feature. When the two QDs have different decay parameters, singular features （a peak or a dip） can take place at the frequency of the cavity mode, and this is attributed to the unbalanced process of the emission and absorption of a single photon.     

左手性材料对V形三能级原子光谱的影响

本文研究了左手性材料板附近V形三能级原子的动力学演化及辐射光谱特性. 主要考虑了从两上能级向下能级跃迁的电偶极矩相互垂直的情形, 探讨了原子初始状态对辐射光谱的影响. 研究结果表明, 左手材料的反聚焦和相位补偿效应所引发的间接量子干涉, 导致两上能级的原子布居数相互影响, 原子在上能级的寿命明显增长或缩短, 并造成了谱线变窄或展宽.     

霍尔推进器壁面材料二次电子发射及鞘层特性

霍尔推进器放电通道等离子体与壁面相互作用形成鞘层,不同壁面材料的二次电子发射对推进器鞘层特性具有重要影响,本文针对推进器壁面鞘层区域建立二维物理模型,研究了氮化硼(BN)、碳化硅(SiC)和三氧化二铝(Al_2O_3)三种不同壁面材料的二次电子发射特性,在改进SiC材料二次电子发射模型的基础上,采用粒子模拟方法,讨论了壁面二次电子发射系数与电子温度和磁场强度的关系,研究了三种材料(BN,SiC和Al_2O_3)的鞘层特性,结果表明:修正的二次电子发射模型拟合曲线与实验曲线几乎一致;在相同电子温度下,三种材料(BN,SiC和Al_2O_3)的二次电子发射系数和壁面电子数密度依次增大,而鞘层电场和鞘层电势降依次减小,BN材料具有合适的二次电子发生射系数,使得霍尔推进器能在低电流下稳态工作。     

Synchronous measurements of the atmospheric radio emission in the two and three millimeter wavelength regions

Apparatus and procedure of measuring the atmospheric radio emission simultaneously in two atmospheric windows are described. The results of measurements of the sky brightness temperature and obtained atmospheric optical depth values are reported. The diurnal and seasonal variations of the sky temperature and zenith absorption as well as their relation to weather parameters of nearsurface atmospheric layer are discussed.     

Absorption coefficient of luminescent bodies in the emission band

Einstein's theory associating the coefficients of absorption, induced emission and spontaneous emission cannot be applied to luminescent systems, because the radiative transitions occur with the absorption or emission of phonons. It may be generalised to include luminescent systems by the use of a hollow sphere whose internal walls are covered with a substance irradiated by a Wood lamp, placed at the centre of the sphere. From this we determine the absorption coefficient of the luminescent substance in the emission band.     

Spectrum apodization of a time-dependent Gaussian pulse incident on the apodized circular aperture in far-field

The diffraction spectral intensity characteristics of a time-dependent Gaussian pulse from an apodized circular aperture in the far field are studied both theoretically and numerically. It is shown that the apodization of the diffracted Gaussian pulse spectrum can be found. Also the red or blue shift of the spectral intensity maximum of the incident pulse is presented.     

多普勒展宽和多普勒频移在光谱分析中的应用

分析了多普勒展宽和多普勒频移区别，讨论了高斯拟合和弦积分线形分布的差异。利用多道光学分析仪（OSMA）测量HT-6M托卡马克限制器前Hα线形分布，通过高斯拟合由多普勒展宽和多普勒频移分别得出等离子温度和粒子入射速度。     

InP/InGaAsP多量子阱自发辐射谱的解析函数

利用洛伦兹线型函数、高斯线型函数和Sech线型函数对InP/InGaAsP多量子阱自发辐射谱进行拟合,采用莱文贝格-马夸特算法,得到上述三种函数的解析表达式.研究结果表明:高斯线型光谱拟合函数的中心波长为1548.651nm,谱线半极大全宽度为61.42 nm,功率补偿为0.00212 mW,拟合优度为0.99191,残差平方和为2.26505×10~(-6).高斯线型拟合的拟合优度最大,残差平方和最小,且各数据点的残差值分布在±0.0001之间,分布比较均匀.高斯线型函数具有较高拟合度.     

声发射特性与材料断裂韧性相关性研究

以高强度铝合金的断裂过程为研究对象，利用先进的声发射试验系统，考察了拉伸试样和带有预制疲劳裂纹的DCB试样在断裂时的声发射事件特性，揭示了材料断裂韧性和声发射特性 间的关系.试验结果表明，材料稳态裂纹扩展起始于K_1C并发射出许多幅值超过 阈值35 dB的信号，材料裂纹失稳扩展时爆发出强烈的声发射信号，材料断裂的累积声发射能与宏 观断裂能呈线性关系. 关键词： 声发射 断裂韧性 铝合金     

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为了提高HT-7装置上等离子体电子回旋辐射(ECE)超外差诊断系统的极向分辨率,根据高斯光学原理,分析了诊断系统天线的改进方案。优化了天线的圆形角锥喇叭尺寸和凸透镜参数以及在装置上的相对位置,使天线接收到的等离子体ECE异常模二次谐波辐射的高斯光束束半径只有30mm左右,能量的高斯光学性质损失不大于13%。