Dependence of critical pitting temperature on the concentration of sulphate ion in chloride-containing solutions

Effects of varying concentration of sulphate (SO₄²⁻) ion on the pitting behavior of 316SS have been investigated using potentiostatic critical pitting temperature (CPT) measurements, potentiostatic current transient technique and scanning electron microscopy in NaCl solution containing 0.5% Cl⁻ ions. The results demonstrated that when the concentration of SO₄²⁻ ion is less than 0.42%, the CPT is surprisingly lower than that without SO₄²⁻ ion, showing an accelerating effect of the SO₄²⁻ ion on pit initiation, which is different from the traditional concept. As the concentration of SO₄²⁻ ion increases beyond 0.42%, the CPT is higher than that without SO₄²⁻ ion, displaying an inhibiting effect of the SO₄²⁻ ion on pit initiation. Based on the above results, a qualitative model is proposed to explain the inhibiting and accelerating effect of SO₄²⁻ ion on the pit initiation using the mechanism of ions-competitive adsorption between SO₄²⁻ and Cl⁻ ions. The electric charges calculated in the process of pitting corrosion indicated that the pit morphology and its dimension are dependent on the content of SO₄²⁻ ion in chloride-containing solutions. The higher the concentration of SO₄²⁻ ion, the larger the dimension of the pit, reflecting an accelerating effect on pit growth.     

Effect of substrate bias voltage on corrosion of TiN/Ti multilayers deposited by magnetron sputtering

Austenitic stainless steel can be attack by localized corrosion in saline environments, such as seawater. TiN/Ti multilayers can improve the corrosion resistance of the stainless steel better than TiN monolayers, because the titanium layers improve the impermeability of TiN/Ti multilayers. In this work, 1.75-4.55 μm thick layers were deposited on to grounded or −100 V biased substrates of 304 stainless steel substrates by reactive magnetron sputtering. The corrosion resistance of the layers was studied by means of potentiodynamic polarization in 0.5 M NaCl solutions. It was found that the pitting corrosion resistance was dependent on the bias and period number of the multilayers.     

Characterization of interface between CuInSe2 and In2O3

CuInSe₂/In₂O₃ structures were formed by depositing CuInSe₂ films by stepwise flash evaporation onto In₂O₃ films, which were grown by DC reactive sputtering of In target in presence of (Ar+O₂) gas mixture. Phase purity of the CuInSe₂ and In₂O₃ films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe₂/In₂O₃/glass structures showed sharp peaks corresponding to (112) plane of CuInSe₂ and (222) plane of In₂O_3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe₂/In₂O₃/Si structures in order to characterize the interface between In₂O₃ and CuInSe₂. The results show that the CuInSe₂ films were near stoichoimetric and In₂O₃ films had oxygen deficient composition. CuInSe₂/In₂O₃ interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In₂O₃/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces.     

Influence of initial surface reconstruction on the interface structure of HfO2/GaAs

We show that the bonding structures and electrical properties of the HfO₂/GaAs interface can be controlled by a choice of the reconstruction on the initial GaAs surface. Electron-beam evaporation of HfO₂ onto the c(4 × 4) surface yielded As-O bonds at the interface, while Ga-O bonds were dominant at the interfaces formed on the (2 × 4) and (4 × 6) surfaces. Influences of the initial surface reconstruction on the interface structure persisted even after annealing at 673 K. Electrical characterization of Ir/HfO₂/GaAs capacitors indicated that the interfacial As-O bonds cause weak Fermi level pinning. It was also suggested that the interfaces dominated by the Ga-O bonds have trapping states in the upper half of the GaAs bandgap.     

Mechanics of plasma exposed spin-on-glass (SOG) and polydimethyl siloxane (PDMS) surfaces and their impact on bond strength

Silicone polymer (PDMS), widely used for micro-fluidic and biosensor applications, possesses an extremely dynamic surface after it is subjected to an oxygen plasma treatment process. The surface becomes extremely hydrophilic immediately after oxygen plasma exposure by developing silanol bond (SiOH), which promotes its adhesion to some other surfaces like, silicon, silicon dioxide, glass, etc. Such a surface, if left in ambient dry air, shows a gradual recovery of hydrophobicity. We have found an identical behavior to occur to surfaces coated with a thin continuous film of SOG (methyl silsesquioxane). The chemistry induced by oxygen plasma treatment of a spin-on-glass (SOG) coated surface provides a much higher density of surface silanol groups in comparison to precleaned glass, silicon or silicon dioxide substrates thus providing a higher bond strength with polydimethyl siloxane (PDMS). The bonding protocol developed by using the spin coated and cured SOG intermediate layer provides an universal regime of multi level wafer bonding of PDMS to a variety of substrates. The paper describes a contact angle based estimation of bond strength for SOG and PDMS surfaces exposed to various combinations of plasma parameters. We have found that the highest bond strength condition is achieved if the contact angle on the SOG surface is less than 10°.     

Preparation and photocatalytic activity of CeO2/TiO2 interface composite film

The CeO₂/TiO₂ and TiO₂/CeO₂ interface composite films were prepared on glass substrates by the sol-gel process via dip-coating and calcining technique. The scanning electron microscopy (SEM) revealed that the TiO₂ layer has a compact and uniformity glasslike surface with 200 nm in thickness, and the CeO₂ layer has a coarse surface with 240 nm in thickness. The X-ray diffractometer (XRD) analysis showed that the TiO₂ layer is made up of anatase phase, and the CeO₂ layer is structured by cubic fluorite phase. Through a series of photo-degradation experiments, the relationship of the photocatalytic activity with the constituents of the films was studied. In virtue of the efficient interfacial charge separation via the process of electron transfer from TiO₂ to CeO₂, the photocatalytic activity of the CeO₂/TiO₂ composite film is high. Contrarily, the photocatalytic activity of the TiO₂/CeO₂ composite film is low, due to its inert surface made up of CeO₂ with broad bandwidth. Apart from the effect of the film structure, the effect of film thickness on photocatalytic activity was also discussed.     

The interface structure of nano-SiO2/PA66 composites and its influence on material's mechanical and thermal properties

The PA66-based nanocomposites containing surface-modified nano-SiO₂ were prepared by melt compounding. The interface structure formed in composite system was investigated by thermogravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The influence of interface structure on material's mechanical and thermal properties was also studied. The results indicated that the PA66 chains were attached to the surface of modified-silica nanoparticles by chemical bonding and physical absorption mode, accompanying the formation of the composites network structure. With the addition of modified silica, the strength and stiffness of composites were all reinforced: the observed increase depended on the formation of the interface structure based on hydrogen bonding and covalent bonding. Furthermore, the differential scanning calorimetry (DSC) and dynamic mechanical analysis (DMA) showed that the presence of modified silica could affect the crystallization behavior of the PA66 matrix and lead to glass transition temperature of composites a shift to higher temperature.     

Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporation

Influence of ZrO₂ in HfO₂ on the reflectance of HfO₂/SiO₂ multilayer at 248 nm was investigated. Two kinds of HfO₂ with different ZrO₂ content were chosen as high refractive index material and the same kind of SiO₂ as low refractive index material to prepare the mirrors by electron-beam evaporation. The impurities in two kinds of HfO₂ starting coating materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum (GDMS) technology and secondary ion mass spectrometry (SIMS) equipment, respectively. It showed that between the two kinds of HfO₂, either the bulk materials or their corresponding films, the difference of ZrO₂ was much larger than that of the other impurities such as Ti and Fe. It is the Zr element that affects the property of thin films. Both in theoretical and in experimental, the mirror prepared with the HfO₂ starting material containing more Zr content has a lower reflectance. Because the extinction coefficient of zirconia is relatively high in UV region, it can be treated as one kind of absorbing defects to influence the optical property of the mirrors.     

Influence of temperature on critical fields in ZnCr2Se4

The complex ac dynamic magnetic susceptibility was used to study the influence of temperature on critical fields in polycrystalline ZnCr₂Se₄ spinel. An antiferromagnetic order with a Néel temperature T_N=20.7 K and a strong ferromagnetic exchange evidenced by a positive Curie-Weiss temperature θ_CW=55.1 K were established. An increasing static magnetic field shifts T_N to lower temperatures while a susceptibility peak at T_m in the paramagnetic region—to higher temperatures. The non-zero and negative values both of the second and third harmonics of susceptibility suggest only a parallel spin coupling in ferromagnetic clusters in the range between the Néel and Curie-Weiss temperatures. Below T_N the magnetic field dependence of susceptibility, χ_ac(H), shows two peaks at critical fields H_c1 and H_c2. The values of H_c1 decrease slightly with temperature while the values of H_c2 drop rapidly with temperature. The strong changes of H_c2 temperature induced are mainly responsible for a spin frustration of the re-entrant type in the spinel under study.     

Kinetics of luminescence of interface defects and resonant Er ions in nanostructured SnO2:SiO2

Silica glass with SnO₂ nanocrystals and Er³⁺ ions are prepared by the sol-gel route and treatment above 1000 °C. Transmission electron microscopy evidences a homogeneous dispersion of nanoclusters 4-6 nm in size in the amorphous silica matrix. Photoluminescence spectra excited at 3.5 eV, outside erbium transitions, show an inhomogeneous spectral distribution of light emission from interface defects, in the range 1.9-2.4 eV, resonant with transitions of erbium ions. The analysis of kinetics and temperature dependence of luminescence allows to quantify the efficiency of the energy transfer channel between nanoclusters and erbium ions.     

Praseodymium silicide formation at the Pr2O3/Si interface

The interface and layer structure of praseodymium (Pr) oxide layers grown on Si(0 0 1) from a high-temperature effusion cell are studied using grazing incidence X-ray diffraction. Due to the interdiffusion of praseodymium and silicon atoms, Pr silicide forms in the layers. We find that Pr silicide is the favorable structure under oxygen deficient growth conditions in the Pr oxide layer. To avoid the silicidation, additional oxygen must be supplied. The formation of Pr silicide is suppressed for layers grown with an oxygen partial pressure of 10⁻⁷ mbar at a substrate temperature of 700 °C.     

Influence of negative pressure on thermoelectric properties of Sb2Te3

We investigated the influence of negative pressure on the electrical conductivity, the Seebeck coefficient, and the power factor of Sb₂Te₃. We performed first-principles calculations with the linearized-augmented plane-wave method considering negative hydrostatic pressure in the range from zero to −2 GPa and doping for electrons and holes up to 10²⁰ cm⁻³. Our results predict a significant increase of the Seebeck coefficient and the power factor under negative pressure for certain doping concentrations.     

Origin of HfO2/GaAs interface states and interface passivation: A first principles study

First principles calculations of HfO₂/GaAs interfaces indicate that the interface states originate from the charge mismatch between HfO₂ and GaAs surfaces. We find that a model neutral interface (HfO₂ and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell) removes gap states due to the balance of the interface charge. F and H can neutralize the HfO₂/GaAs interface resulting in useful band offsets, thus becoming possible candidates to passivate the interface states.     

Influence of substrate temperature on properties of MgF2 coatings

Thermal boat evaporation was employed to prepare MgF₂ single-layer coatings upon both JGS1 and UBK7 substrates at different substrate temperatures. Microstructure, transmittance and residual stress of these coatings were measured by X-ray diffraction, spectrophotometer, and optical interferometer, respectively. Measurement of laser induced damage threshold (LIDT) of the samples was performed at 355 nm, 8 ns pulses. The results showed that high substrate temperature was beneficial to crystallization of the film. Above 244 °C, the refractive index increased gradually with the substrate temperature rising. Whereas, it was exceptional at 210 °C that the refractive index was higher than those deposited at 244 and 277 °C. The tensile residual stresses were exhibited in all MgF₂ films, but not well correlated with the substrate temperature. In addition, the stresses were comparatively smaller upon JGS1 substrates. A tendency could be seen that the LIDTs reached the highest values at about 244 °C, and the films upon JGS1 had higher LIDTs than those upon UBK7 substrates at the same temperature. Meanwhile, the damage morphologies showed that the laser damage of the coating resulted from an absorbing center at the film-substrate interface. The features of the damages were displayed by an absorbing center dominated model. Furthermore, the reason of the difference in LIDT values was discussed in detail.     

Formation and mobility of droplets on composite layered substrates

A mesoscale fluid film placed on a solid support may break up and form droplets. In addition, droplets may exhibit spontaneous translation by modifying the wetting properties of the substrate, resulting in asymmetry in the contact angles. We examine mechanisms for droplet formation and motion on uniform and terraced landscapes, i.e., composite substrates. The fluid film stability, droplet formation and velocity are studied theoretically in the isothermal case using a lubrication approach in one spatial dimension. The droplet properties are found to involve contributions from both the terraced layer thickness and molecular interactions via the disjoining potential.     

Dehydrogenation at the Fe/Lu2O3 interface upon rapid thermal annealing

The interfaces between ferromagnetic electrodes and tunnel oxides play a crucial role in determining the performances of spin-based electronic devices, such as magnetic tunnel junctions. Therefore, a deep knowledge of the structural, chemical, and magnetic properties of the buried interfaces is required. We study the influence of rapid thermal annealing treatments up to 500 °C on the interfacial properties of the Fe/Lu₂O₃ system. As-grown stacks reveal the presence of hydrogenated Fe-Lu-H intermetallic phases at the Fe/Lu₂O₃ interface most likely due to the H absorption on the Lu₂O₃ surface upon exposure to air and/or to the oxide growth. The annealing treatments induce remarkable changes of the structural, chemical, and magnetic properties at the interface, as evidenced at the atomic scale by the sub-monolayer sensitivity of conversion electron Mössbauer spectroscopy. The use of complementary techniques such as X-ray diffraction, time-of-flight secondary ion mass spectrometry, and in situ X-ray photoelectron spectroscopy, confirms that the main effect of the annealing is to gradually promote the dehydrogenation at the Fe/Lu₂O₃ interface.     

High-pressure Raman spectroscopic studies on orthophosphates Ba3(PO4)2 and Sr3(PO4)2

By using diamond anvil cell (DAC), high-pressure Raman spectroscopic studies of orthophosphates Ba₃(PO₄)₂ and Sr₃(PO₄)₂ were carried out up to 30.7 and 30.1 GPa, respectively. No pressure-induced phase transition was found in the studies. A methanol:ethanol:water (16:3:1) mixture was used as pressure medium in DAC, which is expected to exhibit nearly hydrostatic behavior up to about 14.4 GPa at room temperature. The behaviors of the phosphate modes in Ba₃(PO₄)₂ and Sr₃(PO₄)₂ below 14.4 GPa were quantitatively analyzed. The Raman shift of all modes increased linearly and continuously with pressure in Ba₃(PO₄)₂ and Sr₃(PO₄)₂. The pressure coefficients of the phosphate modes in Ba₃(PO₄)₂ range from 2.8179 to 3.4186 cm⁻¹ GPa⁻¹ for ν₃, 2.9609 cm⁻¹ GPa⁻¹ for ν₁, from 0.9855 to 1.8085 cm⁻¹ GPa⁻¹ for ν₄, and 1.4330 cm⁻¹ GPa⁻¹ for ν₂, and the pressure coefficients of the phosphate modes in Sr₃(PO₄)₂ range from 3.4247 to 4.3765 cm⁻¹ GPa⁻¹ for ν₃, 3.7808 cm⁻¹ GPa⁻¹ for ν₁, from 1.1005 to 1.9244 cm⁻¹ GPa⁻¹ for ν₄, and 1.5647 cm⁻¹ GPa⁻¹ for ν₂.     

Accurate detection of interface between SiO2 film and Si substrate

Accurate end point detection of interface for multilayers using focused ion beam (FIB) is important in nanofabrication and IC modification. Real-time end point graph shows sample absorbed current as a function of sputtering time during FIB milling process. It is found that sample absorbed current increases linearly with ion beam current for the same material and changes when ion beam is milling through a different material. Investigation by atomic force microscope (AFM) and FIB cross-sectioning shows that accurate SiO₂/Si interface occurs to where the maximum sample absorbed current occurs. Since sample absorbed current can be real-time monitored in focused ion beam machine, the paper provides a viable and simple method for accurately determining the interface during FIB milling process for widely used SiO₂/Si system.     

Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics

In this work we have compared the SiO₂/SiC interface electrical characteristics for three different oxidations processes (dry oxygen, water-containing oxygen and water-containing nitrogen atmospheres). MOS structures were fabricated on 8° off-axis 4H-SiC(0 0 0 1) n- and p-type epi-wafers. Electrical characteristics were obtained by I-V measurements, high-frequency capacitance-voltage (C-V) and ac conductance (G-ω) methods. Comparing the results, one observes remarkable differences between samples which underwent different oxidation routes. Among the MOS structures analyzed, the sample which underwent wet oxidation with oxygen as carrier gas presented the higher dielectric strength and lower values of interface states density.     

Influence of nanoenvironment on luminescence of Euactivated SnO2 nanocrystals

The emission intensity of the peak at 612 nm (⁵D₀→⁷F₂) of the Eu³⁺ ions activated SnO₂ nanocrystals (doped and coated) is found to be sensitive to the nanoenvironment. We have compared the luminescence efficiencies of the nanocrystals of SnO₂ doped by Eu₂O₃ with those of SnO₂ coated by Eu₂O₃ and we found that the intensities are significantly higher in coated nanocrystals. Furthermore, it is clear from luminescence intensity measurements that Eu³⁺ ions occupy low symmetry sites in the Eu₂O₃ coated SnO₂ nanocrystal. The analysis suggests that the radiative relaxation rate is higher in Eu₂O₃ coated SnO₂ nanocrystals than Eu₂O₃ doped SnO₂ nanocrystals due to the asymmetric environment of Eu³⁺ ions in coated samples.