Charge collection in amorphous silicon solar cells: Cell analysis and simulation of high-efficiency pin devices

The drift length L_drift = μτE within the i layer of a-Si:H solar cells is a crucial parameter for charge collection and efficiency. It is strongly reduced not only by light-induced reduction of μτ, but also by electric field deformation ΔE by charges near the p–i and i–n interfaces. Here, a simple model is presented to estimate contributions of free carriers, charges trapped in band tails and charged dangling bonds to ΔE. It is shown that the model reproduces correctly trends observed experimentally and by ASA simulations: charged dangling bonds contribute most to ΔE of meta-stable cells. Electrons trapped in the conduction band tail near the i–n interface lead to the strongest field deformation in the initial state, while positively charged dangling bonds near the p–i interface get more important with degradation under AM1.5g spectrum. The measurable parameter V_coll is proposed as an indirect parameter to estimate the electric field, and an experimental technique is presented that could enable the distinction of defects near the p–i and the i–n interfaces.     

Growth and optical properties of high-density InN nanodots

High density InN/GaN nanodots were grown by pulsed mode (PM) metal–organic chemical vapor deposition (MOCVD). InN nanodots density of up to ∼5×10¹⁰ cm⁻² at a growth temperature of 550 °C was achieved. The high diffusion activation energy of 2.65 eV due to high NH₃ flow rate generated more reactive nitrogen adatoms on the growth surface, and is believed to be the main reason for the growth of high density InN nanodots. In addition, an anomalous temperature dependence of the PL peak energy was observed for high density InN nanodots. The high carrier concentration, due to high In vacancy (V_In) in the InN nanodots, thermally agitated to the conduction band. As the measurement temperature increased, the increase of Fermi energy resulted in blue-shifted PL peak energy. From the Arrhenius plot of integrated PL intensity, the thermal activation energy for the PM grown InN nanodots was estimated to be E_a∼51 meV, indicating strong localization of carriers in the high density InN nanodots.     

Effect of impurities on the metastable zone width of solute–solvent systems

The novel approach to interpret the metastable zone width obtained by the polythermal method using the classical theory of three-dimensional nucleation proposed recently [K. Sangwal, Cryst. Growth Des. 9 (2009) 942] is extended to describe the metastable zone width of solute–solvent systems in the presence of impurities. It is considered that impurity particles present in the solution can change the nucleation rate J by affecting both the kinetic factor A and the term B related with the solute–solvent interfacial energy γ. An expression relating metastable zone width, as defined by the maximum supercooling ΔT_max of a solution saturated at temperature T₀, with cooling rate R is proposed in the form: (T₀/ΔT_max)²=F(1−Z ln R), where F and Z are constants. The above relation can also be applied to describe the experimental data on maximum supercooling ΔT_max obtained at a given constant R as a function of impurity concentration c_i by the polythermal method and on maximum supersaturation σ_max as a function of impurity concentration c_i by the isothermal method. Experimental data on ΔT_max obtained as a function of cooling rate R for solutions containing various concentrations c_i of different impurities and as a function of concentration c_i of impurities at constant R by the polythermal method and on σ_max as a function of impurity concentration c_i by the isothermal method are analyzed satisfactorily using the above approach. The experimental data are also analyzed using the expression of the self-consistent Nývlt-like approach [K. Sangwal, Cryst. Res. Technol. 44 (2009) 231]: ln(ΔT_max/T₀)=Φ+β ln R, where Φ and β are constants. It was found that the trends of the dependences of Φ and β on impurity concentration c_i are similar to those observed in the trends of the dependences of constants F and Z on c_i predicted by the approach based on the classical nucleation theory.     

On the effect of impurities on the metastable zone width of phosphoric acid

The experimental data published in the literature on the metastable zone width, as determined by the maximum supercooling ΔT_max using the conventional polythermal method, of phosphoric acid aqueous solutions containing impurities were analyzed to understand an increase in ΔT_max/T₀ with an increase in saturation temperature T₀ of solute–solvent system and the effect of impurities on the metastable zone width. For the analysis the following relations were used: ln(ΔT_max/T₀)=Φ+βln R (K. Sangwal, Cryst. Res. Technol. 44, 2009, 231−247) and (T₀/ΔT_max)²=F(1−Zln R) (K. Sangwal, Cryst. Growth Des. 9, 2009, 942−950; J. Cryst. Growth 311, 2009, 4050−4061), where Φ, β, F and Z are constants. Analysis of the experimental data revealed that: (1) the parameters Φ and F strongly depend on saturation temperature T₀ and concentration c_i of impurities, but the constants β and Z are independent of T₀ and depend on c_i, (2) the dependence of the parameters Φ and F on T₀ follows an Arrhenius-type equation with activation energy E_sat, (3) the activation energy E_sat for diffusion of ions/molecules of phosphoric acid containing impurity ions is equal to the differential heat of adsorption Q_diff for these impurities, (4) the effectiveness of an impurity is directly connected with the values of their differential heat of adsorption Q_diff; the lower the values of Q_diff for an impurity, the lower is its effectiveness in promoting nucleation, (5) the activation energy E_sat is not related with its heat of dissolution ΔH_s and (6) the increase in ΔT_max/T₀ with an increase in T₀ for phosphoric acid is associated with the activation energy E_sat for diffusion of solute molecules in the solution such that E_sat<0.     

Enlarged ferromagnetic hysteresis in InMnP:Be epilayers formed by thermal diffusion using MBE-grown Mn/InP:Be bilayers

The p-type InMnP:Be epilayers, which were prepared by thermal diffusion of Mn through in-situ deposition of Mn layer using molecular beam epitaxy (MBE) onto MBE-grown InP:Be epilayers and subsequent in-situ annealing at 300–350 °C, were investigated. InMnP:Be epilayers prepared by the above sequence clearly showed the Mn-related emission band at 1.1–1.2 eV, which indicates the effective incorporation of Mn²⁺ ions into the host layer InP:Be. The samples demonstrated very large ferromagnetic hysteresis loops with enhanced coercivity, and the ferromagnetic-to-paramagnetic transition of the samples was observed to occur at ∼85 K. These results suggest that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be effectively formed by the above-mentioned sequential in-situ processes.     

Preparation of Sb2S3 nanomaterials with different morphologies via a refluxing approach

Single-crystalline antimony trisulfide (Sb₂S₃) nanomaterials with flower-like and rod-like morphologies were successfully synthesized under refluxing conditions by the reaction of antimony trichloride (SbCl₃) and thiourea with PEG400 and OP-10 as the surfactants. X-ray diffraction (XRD) indicates that the obtained sample is orthorhombic-phase Sb₂S₃ with calculated lattice parameters a=1.124 nm, b=1.134 nm and c=0.382 nm. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images show that the flower-like Sb₂S₃ is 9–10 μm in size, which is composed of thin leaves with thickness of 0.05–0.2 μm, width of 0.8–2.2 μm and length of 2.5–3 μm, and the rod-like Sb₂S₃ is 45–360 nm in diameter and 0.7–4 μm in length, respectively. UV–Vis analysis indicates that the band gap of Sb₂S₃ nanorods is 1.52 eV, suitable for photovoltaic conversion. A possible mechanism of formation was proposed. The effects of reaction time and surfactants on the growth of nanomaterials with different morphologies were also investigated.     

Studies of some mechanical and optical properties of: (70 − x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Specimens of the glassy system: (70 − x)TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by the melt-quenching. An ultrasonic pulse-echo technique was employed, at 5 MHz, for measuring: the ultrasonic attenuation, longitudinal and shear wave velocities, elastic moduli, Poisson ratio, Debye temperature and hardness of the present glasses. It is found that the gradual replacement of TeO₂ by Li₂O in the glass matrix up to 30 mol% leads to decrease the average crosslink density and rigidity of prepared samples which affects the properties, i.e., the hardness, ultrasonic wave velocities and elastic moduli are decreased, while the Poisson ratio and the ultrasonic attenuation are increased. Also, optical absorption spectra were recorded in the range, 200-800 nm for these glasses. The obtained results showed that a gradual shift in the fundamental absorption edge toward longer wavelengths occurred. Values of both of the optical energy gap, E_opt, and width tails, ΔE, are determined. It is observed that E_opt is decreased and ΔE increased with the increase of Li₂O in the glass matrix up to 30 mol%. The compositional dependences of the above properties are discussed and correlated to the structure of tested glasses.     

Morphological,structural and electrical investigations on non-polar a-plane ZnO epilayers

We report on the growth of non-polar a-plane ZnO by CVD on r-plane-sapphire-wafers, a-plane GaN-templates and a-plane ZnO single-crystal substrates. Only the homoepitaxial growth approach leads to a Frank–van-der–Merwe growth mode, as shown by atomic force microscopy. The X-ray-diffraction spectra of the homoepitaxial thin films mirror the excellent crystalline quality of the ZnO substrate. The morphological and the structural quality of the homoepitaxial films is comparable to the best results for the growth on c-plane ZnO-substrates. The impurity incorporation, especially of group III elements, seems to be reduced when growing on the non-polar a-plane surface compared to the c-plane films as demonstrated by secondary ion mass spectrometry (SIMS). Optical properties have been investigated using low temperature photoluminescence measurements. We employed capacitance–voltage measurements (C–V) to measure the background carrier density and its profile from substrate/film interface throughout the film to the surface. In thermal admittance spectroscopy (TAS) specific traps could be distinguished, and their thermal activation energies and capture cross sections could be determined.     

Crystallization and glass transition kinetics in Cu ion substituted Cux-Ag1 − xI-Ag2O-V2O5 superionic glasses

Crystallization kinetics and thermal properties in superionic glasses Cu_xAg_1 − xI-Ag₂O-V₂O₅ for x = 0.1-0.3 have been thoroughly investigated. X-ray diffraction and differential scanning calorimetry measurements confirm the precipitation of at least three compounds during crystallization, viz. AgI, Ag₄V₂O₇ and Ag₈I₄V₂O₇. The activation energies for structural relaxation (E_s) and crystallization (E_c) obtained using Moynihan and Kissinger formulation exhibit interesting trends with CuI substitution. The E_s value decreases with CuI substitution in the system. Further, the E_c values corresponding to precipitation of Ag₄V₂O₇ and Ag₈I₄V₂O₇ exhibit increasing trend, whereas, for that of AgI precipitation a decreasing trend with CuI content. The Avrami parameter calculated from Augis-Bennett method and Ozawa equation suggests predominantly surface crystallization in the glassy system. The electrical conductivity-temperature (σ-T) cycles interestingly demonstrate increasing precipitation of AgI with CuI content in the glass matrix.     

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth

Electrical properties, deep traps spectra and structural performance were studied for m-GaN films grown on m-SiC substrates by standard metalorganic chemical vapor deposition (MOCVD) and by MOCVD with lateral overgrowth (ELO) or sidewall lateral overgrowth (SELO). Standard MOCVD m-GaN films with a very high dislocation density over 10⁹ cm⁻² are semi-insulating n-type with the Fermi level pinned near E_c−0.7 eV when grown at high V/III ratio. For lower V/III they become more highly conducting, with the electrical properties still dominated by a high density (∼10¹⁶ cm⁻³) of E_c−0.6 eV electron traps. Lateral overgrowth that reduces the dislocation density by several orders of magnitude results in a marked increase in the uncompensated shallow donor density (∼10¹⁵ cm⁻³) and a substantial decrease of the density of major electron traps at E_c−0.25 and E_c−0.6 eV (down to about 10¹⁴ cm⁻³). Possible explanations are briefly discussed.     

Crystal growth and characterization of GaCrN nanorods on Si substrate

GaCrN nanorods were grown on GaN nanorods by RF-plasma-assisted molecular beam epitaxy. GaN nanorods were grown on Si (0 0 1) substrates with native SiO₂. Cr doping into GaCrN nanorods was conducted at substrate temperatures of 800 and 550 °C. Cross-sectional transmission electron microscopy images revealed that the diameter of GaCrN nanorod gradually increases with growth proceeding at 550 °C, while the growth at 800 °C does not change the nanorod diameter. Low-temperature growth enhances the growth perpendicular to the c-axis and decreases the growth along the c-axis. It was found that the solubility limit of Cr atoms in GaCrN is much higher for the low-temperature growth than for the high-temperature growth. It was also found that the highest saturation magnetization is obtained at some optimum Cr cell temperature.     

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

We demonstrate homoepitaxial growth of GaInN/GaN-based green (500–560 nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500 nm, a minimum InN-fraction of ∼14% is needed for both, a- and m-plane quantum wells (QWs), while ∼8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Growth and photoluminescence properties of vertically aligned SnO2 nanowires

Vertically aligned SnO₂ nanowires (NWs) were grown for the first time by a vapor–liquid–solid method on c-sapphire with gold as a catalyst under Ar gas flow. Electron backscatter diffraction analysis indicated the NWs are single crystalline having the rutile structure, grow vertically along the [1 0 0] direction, and exhibit a consistent epitaxial relationship where lattice mismatch is estimated to be 0.3% along the SnO₂ [0 1 0] direction. The growth of these NWs is sensitive to many parameters, including growth duration, substrate type, source vapor concentration, and the thickness of the catalyst layer. Photoluminescence measurements at room temperature showed that the vertically aligned NWs exhibit an intense transition at 3.64 eV, a near band-edge transition which is rarely observed in SnO₂.     

The effect of solvent ratio and water on the growth of C60 nanowhiskers

The growth of C₆₀ nanowhiskers (C₆₀NWs) prepared by a modified liquid–liquid interfacial precipitation method is investigated, focusing on the effect of solvent ratio and water content in the C₆₀–toluene–isopropyl alcohol (IPA) solution system. The precipitation of C₆₀NWs was markedly influenced by the solvent ratio of toluene to IPA, and the C₆₀NWs were found to grow longer above a critical diameter (D_c), which depends on the solvent ratio. The addition of a small amount of H₂O to the C₆₀–toluene–IPA solution promoted the growth of C₆₀NWs. This catalytic effect of water on the growth of C₆₀NWs was confirmed also by the experiment using heavy water (D₂O) and by the decrease of growth activation energy of C₆₀NWs with increase of H₂O content in the C₆₀–toluene–IPA solution.     

Structural transformation on Se0.8Te0.2 chalcogenide glass

Using X-ray diffraction and differential scanning calorimetry (DSC), the structure and the crystallization mechanism of Se_0.8Te_0.2 chalcogenide glass has been studied. The structure of the crystalline phase has been refined using the Rietveld technique. The crystal structure is hexagonal with lattice parameter a = 0.443 nm and c = 0.511 nm. The average crystallite size obtained using Scherrer equation is equal 16.2 nm, so it lies in the nano-range. From the radial distribution function, the short range order (SRO) of the amorphous phase has been discussed. The structure unit of the SRO is regular tetrahedron with (r₂/r₁) = 1.61. The Se_0.8Te_0.2 glassy sample obeys the chemical order network model, CONM. Some amorphous structural parameters have been deduced. The crystallization mechanism of the amorphous phase is one-dimensional growth. The calculated value of the glass transition activation energy (E_g) and the crystallization activation energy (E_c) are 159.8 ± 0.3 and 104.3 ± 0.51 kJ/mol, respectively.     

Complex primary crystallization kinetics of amorphous Finemet alloy

The complex primary crystallization kinetics of the amorphous Finemet soft magnetic alloys has been analyzed by non-isothermal DSC measurements. The local activation energies E_c(α) were determined by an isoconversional method without assuming the kinetic model function and its average value was about 383 kJ/mol. The nucleation activation energy E_n and growth activation energy E_g were 425 and 333 kJ/mol, respectively. And the apparent local activation energies E_c can be expressed by E_n and E_g as follows: E_c = aE_n + bE_g. The local Avrami exponents lies between 1 and 2 in a wide range of 0.2 < α < 0.9, and it indicates that dominating crystallization mechanism in the non-isothermal primary crystallization of amorphous Finemet alloy is one dimensional growth at a near-zero nucleation rate for surface crystallization. The significant variation of local Avrami exponent and local activation energy for primary crystallization with crystallized volume fraction demonstrates that the primary crystallization kinetics of amorphous Finemet alloy varies at different stages. In addition, the variable local activation energies E_c(α) and local Avrami exponents n(α) are applicable and correct in describing the primary crystallization process of the amorphous Finemet alloy according to the theoretical DSC curve simulation.     

Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

Dielectric layer containing CoSi₂ nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp₂ and NH₃ plasma mixed with SiH₄ without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi₂ nanocrystal. The gate stack composed of dielectric layer containing CoSi₂ nanocrystals with ALD HfO₂ capping layer together with Ru metal gate was analyzed by capacitance–voltage (C–V) measurement. Large hysteresis of C–V curves indicated charge trap effects of CoSi₂ nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.     

Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes

The effect of the AlGaN electron blocking layer (EBL) thickness on the electrical and optical properties of 310 nm AlGaN single quantum well (SQW) light-emitting diodes (LEDs) has been investigated. A large ideality factor extracted from the current–voltage (I–V) characteristics indicates that a tunneling mechanism dominates the carrier transport process in the LEDs. The ideality factor decreases with increasing EBL thickness suggesting that deep-level state assisted tunneling is reduced. In addition, the QW emission intensity is enhanced with the introduction of an EBL due to the reduction of electron overflow to the p-type layer. The QW emission intensity is sensitive to the EBL thickness. This is attributed to the reduction of electron tunneling to the p-type layer with an EBL.     

Thermal stability of thin InGaN films on GaN

The thermal stability of ∼200-nm-thick InGaN thin films on GaN was investigated using isothermal and isochronal post-growth anneals. The In_xGa_1−xN films (x=0.08–0.18) were annealed in N₂ at 600–1000 °C for 15–60 min, and the resulting film degradation was monitored using X-ray diffraction (XRD) and photoluminescence (PL) measurements. As expected, films with higher indium concentration showed more evidence for decomposition than the samples with lower indium concentration. Also for each alloy composition, decreases in the PL intensity were observed starting at much lower temperatures compared to decreases in the XRD intensity. This difference in sensitivity of the PL and XRD techniques to the InGaN decomposition suggest that defects that quench luminescence are generated prior to the onset of structural decomposition. For the higher indium concentration films, the bulk decomposition proceeds by forming metallic indium and gallium regions as observed by XRD. For the 18% indium concentration film, measurement of the temperature-dependent InGaN decomposition yields an activation energy, E_A, of 0.87±0.07 eV, which is similar to the E_A for bulk InN decomposition. The InGaN integrated XRD signal of the 18% film displays an exponential decrease vs. time, implying InGaN decomposition proceeds via a first-order reaction mechanism.