Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1−xN on Si (1 1 1)

We present MOVPE-grown, high-quality Al_xGa_1−x N layers with Al content up to x=0.65 on Si (1 1 1) substrates. Crack-free layers with smooth surface and low defect density are obtained with optimized AlN-based seeding and buffer layers. High-temperature AlN seeding layers and (low temperature (LT)/high temperature (HT)) AlN-based superlattices (SLs) as buffer layers are efficient in reducing the dislocation density and in-plane residual strain. The crystalline quality of Al_xGa_1−xN was characterized by high-resolution X-ray diffraction (XRD). With optimized AlN-based seeding and SL buffer layers, best ω-FWHMs of the (0 0 0 2) reflection of 540 and 1400 arcsec for the (1 0 1¯ 0) reflection were achieved for a ∼1-μm-thick Al_0.1Ga_0.9N layer and 1010 and 1560 arcsec for the (0 0 0 2) and (1 0 1¯ 0) reflection of a ∼500-nm-thick Al_0.65Ga_0.35N layer. AFM and FE-SEM measurements were used to study the surface morphology and TEM cross-section measurements to determine the dislocation behaviour. With a high crystalline quality and good optical properties, Al_xGa_1−x N layers can be applied to grow electronic and optoelectronic device structures on silicon substrates in further investigations.     

Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy

Semi-polar (1 1 2¯ 2) GaN layers were selectively grown by metal organic chemical vapor phase epitaxy on patterned Si (3 1 1) substrates without SiO₂ amorphous mask. The (1 1 2¯ 2) GaN layers could be selectively grown only on Si (1 1 1) facets when the stripe mask width was narrower than 1 μm even without SiO₂. Inhomogeneous spatial distribution of donor bound exciton (DBE) peak in low-temperature cathodoluminescence (CL) spectra was explained by the difference of growth mode before and after the coalescence of stripes. It was found that the emission intensity related crystal defects is drastically decreased in case of selective growth without SiO₂ masks as compared to that obtained with SiO₂ masks.     

Three-dimensional structure of fast ion conducting 0.5Li2S + 0.5[(1 − x)GeS2 + xGeO2] glasses from high-energy X-ray diffraction and reverse Monte Carlo simulations

A high-energy X-ray diffraction study has been carried out on a series of 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses with x = 0.0, 0.1, 0.2, 0.4, 0.6 and 0.8. Structure factors were measured to wave vectors as high as 30 Å⁻¹ resulting in atomic pair distribution functions with high real space resolution. The three dimensional atomic-scale structure of the glasses was modeled by reverse Monte Carlo simulations based on the diffraction data. Results from the simulations show that at the atomic-scale 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses may be viewed as an assembly of independent chains of (Li^+-S)₂GeS_2/2 and (Li^+-O)₂GeO_2/2 tetrahedra as repeat units, where the Li ions occupy the open space between the chains. The new structure data may help understand the reasons for the sharp maximum in the Li⁺ ion conductivity at x ∼ 0.2.     

Epitaxial lateral overgrowth on (2 1¯ 1¯ 0) a-plane GaN with [0 1¯ 1 1]-oriented stripes

Epitaxial lateral overgrowth was applied to a-plane GaN on r-plane sapphire using SiO₂ stripe masks oriented parallel to [0 1¯ 1 1]. Coalescence and defect distribution was studied using scanning electron microscopy and cathodoluminescence. Defects, i.e., threading dislocations and basal plane stacking faults from the template propagate into the overgrown layer through the mask openings. Stacking faults spread into the whole overgrown layer, whereas threading dislocations are laterally confined in the region above the mask where a part of them is terminated at the inclined coalescence boundary. Lateral overgrowth and dislocation termination at the coalescence boundary leads to an improvement in luminescence intensity and crystal quality, in comparison to the template. The measured XRD rocking curve FWHM were 453″ with incidence along the [0 0 0 1] c-direction and 280″ with incidence along the [0 1 1¯ 0] m-direction.     

Epitaxial NiO (1 0 0) and NiO (1 1 1) films grown by atomic layer deposition

Epitaxial NiO (1 1 1) and NiO (1 0 0) films have been grown by atomic layer deposition on both MgO (1 0 0) and α-Al₂O₃ (0 0 l) substrates at temperatures as low as 200 °C by using bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as precursors. The films grown on the MgO (1 0 0) substrate show the expected cube on cube growth while the NiO (1 1 1) films grow with a twin rotated 180° on the α-Al₂O₃ (0 0 l) substrate surface. The films had columnar microstructures on both substrate types. The single grains were running throughout the whole film thickness and were significantly smaller in the direction parallel to the surface. Thin NiO (1 1 1) films can be grown with high crystal quality with a FWHM of 0.02–0.05° in the rocking curve measurements.     

Optical properties of Cr ion in lithium metasilicate Li2O · SiO2 transparent glass-ceramics

The optical properties of Cr³⁺ ions in lithium metasilicate (Li₂O · SiO₂) transparent glass-ceramics were investigated. The main crystalline phase precipitated was the lithium metasilicate (Li₂O · SiO₂) crystal. The percent crystallinity and crystalline size were ranging 65-75% and 20-35 nm, respectively. The color changes drastically to deep pink from emerald green upon crystallization. New and strong absorption bands appeared and the absorption intensity increases by about 10 times that in glass. These new absorption bands are found to be derived from Cr³⁺ ions in octahedral sites in the lithium metasilicate crystal lattice. Cr³⁺ ions substitute for three Li⁺ ions and occupy the distorted octahedral site between single [SiO₄]_n chains of lithium metasilicate crystal. The ligand field parameters can be estimated: 10Dq = 13 088 cm⁻¹, B = 453 cm⁻¹, Dq/B = 2.89 and C = 2036 cm⁻¹. The near-infrared luminescence centered at 1250 nm was not detected in the deep pink glass-ceramics unlike emerald green glass.     

A new in-situ surface treatment during MBE-grown PbSe on CaF2/Si(1 1 1) heterostructure

The continual improvement of IV-VI materials grown by molecular beam epitaxy (MBE) is a key step in the development of IV-VI infrared semiconductor devices on silicon substrates. This study presents a novel surface-treatment method which is carried out during MBE growth of monocrystalline PbSe on Si(1 1 1)-oriented substrates. Details of the experimental procedures are described and supported by reflection high-energy electron diffraction (RHEED) patterns. The effect of the in-situ surface-treatment method is exhibited in the forms of improved electrical and morphological properties of PbSe thin films. Specially, the carrier mobility increases almost three-fold at 77 K and nearly two-fold at 300 K. The density of the growth pits undergoes almost three-fold reduction, whereas the density of the threading dislocations decreases around four-fold.     

Preparation, phase transformation and microstructure of ZrxTi1−xO2 (x = 0.1-0.9) fine fibers

Zr_xTi_1−xO₂ (x = 0.1-0.9) fibers were prepared by the sol-gel dry-spinning method. Polyacetylacetonatozirconium (PAZ) and tetrabutyl titanate (C₁₆H₃₆O₄Ti) were used as raw materials. The green fibers were obtained from the amorphous spinnable solution and then heat-treated to convert into polycrystalline fibers. The main phase changes from TiO₂ to zirconium titanate (ZT) and then tetragonal ZrO₂ with increasing ZrO₂ content. The crystallization temperature varied with the molar ratio of Zr:Ti. The heat-treated fibers at 1050 °C have few pores and no cracks with diameters of 10-20μm and lengths of 1-5 cm.     

Effect of P2O5 content in two series of soda lime phosphosilicate glasses on structure and properties - Part I: NMR

The effect of the variation in phosphate (P₂O₅) content on the structure of two series of bioactive glasses in the quaternary system SiO₂-Na₂O-CaO-P₂O₅ was studied. The first series (I) was a simple substitution of P₂O₅ for SiO₂ keeping the Na₂O:CaO ratio fixed (1.00:0.87). The second series was designed to ensure charge neutrality in the orthophosphate , therefore as P₂O₅ was added the Na₂O and CaO content was varied to provide sufficient Na⁺ and Ca²⁺ cations to charge balance the orthophosphate present. The glass network connectivity (NC) was calculated for each glass and a modification for the presence of a separate P₂O₅ phase was included (NC′). ³¹P and ²⁹Si magic-angle-spinning nuclear magnetic resonance (MAS-NMR) spectroscopy was performed on glass series I and II to determine the structural units present and their relation to glass properties. ³¹P MAS-NMR spectra of series I resulted in a broad resonance around 9 ppm corresponding to orthophosphate in an amorphous environment. The 9.25 mol% P₂O₅ glass shown to be partially crystalline by X-ray diffraction was heat treated, and the ³¹P MAS-NMR spectrum showed a sharp peak around 3 ppm corresponding to calcium orthophosphate or sodium pyrophosphate and overlapping broader peaks at 8.5, 10.5 and 14 ppm possibly corresponding to two mixed calcium-sodium orthophosphate phases and amorphous sodium orthophosphate respectively. ³¹P MAS-NMR spectra of series II resulted in a broad resonance around 10.5 ppm corresponding to orthophosphate in an amorphous environment. ²⁹Si MAS-NMR spectra of glasses from series I showed a shift in the resonance peak from around −78 to −86 ppm indicating an increase in Q³ species in the glass and a reduction in Q² with phosphate addition confirming the presence of orthophosphate. The heat treated sample showed a sharp ²⁹Si-NMR resonance at −88 ppm, indicating a crystalline Q² six-membered combeite (Na₂O · 2CaO · 3SiO₂) silicate-type phase, which was confirmed by powder X-ray diffraction. ²⁹Si MAS-NMR spectra of glasses from series II showed no shift in the resonance at around −78 ppm across the series, confirming an orthophosphate environment.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Spectrometric and ellipsometric studies of (1 − x)TiO2 · xLn2O3 (Ln = Nd, Sm, Gd, Er, Yb) thin films

Spectrometric and ellipsometric studies of (1 − x)TiO₂ · xLn₂O₃ (Ln = Nd, Sm, Gd, Er, Yb; x = 0.33, 0.5) thin films at room temperature were performed. The obtained dispersion dependences of refractive indices are successfully described by the optical-refractometric relation. The dependence of optical pseudogap and refractive indices on composition and molar mass of the films is investigated. The influence of compositional disordering on the energy width of the exponential absorption edge is studied.     

Si(0 0 1) surface oxidation by N2O

Ultra-thin homogeneous oxynitride films are prepared on Si(0 0 1). The Si surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N₂O at altered temperatures. Thus oxynitride layers of different thickness and different properties are grown depending on the N₂O pressure and the Si temperature. This is illustrated by a schematic diagram. The properties of the different oxynitride layers were studied by a combined photoemission electron microscopy (PEEM) and photoelectron spectroscopy (PES) investigation using highly monochromatic synchrotron radiation. The amount of oxygen and nitrogen incorporated in the oxynitride layers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images.     

Structural,electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

SnO₂ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO₂ films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO₂(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO₂. The carrier concentration of the films is in the range from 1.15×10¹⁹ to 2.68×10¹⁹ cm⁻³, and the resistivity is from 2.48×10⁻² to 1.16×10⁻² Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO₂ films is about 3.75–3.87 eV.     

Sodium tracer diffusion in glasses of the type (Na2O)0.2[(BO1.5)x(SiO2)1 − x]0.8

Sodium tracer diffusion coefficients, D_Na*, have been measured in sodium borosilicate glasses of the type (Na₂O)_0.2[(BO_1.5)_x(SiO₂)_1 − x]_0.8 as a function of temperature and the composition parameter x. In these glasses, which can alternatively also be described by using the formula Na₂O·(2B₂O₃)_x·(4SiO₂)_1 − x, one network former unit, SiO₂, is replaced by another one, BO_1.5, while keeping the sodium concentration constant. At constant temperature, the tracer diffusion coefficient of sodium as a function of x has a shallow minimum at about x = 0.7. At temperatures below about 310 °C the temperature dependences of the measured tracer diffusion coefficients are of Arrhenius-type; at higher temperatures one observes an increase in the temperature dependence with increasing temperature. The activation energy derived from sodium tracer diffusion data for temperatures up to about 310 °C increases about linearly with increasing x from about 70 to 80 kJ/mol. The pre-exponential factor as a function of x varies by about one order of magnitude and has a minimum at about x = 0.4. Values derived for the Haven-ratio are smaller than one and show a shallow minimum as a function of x at around x = 0.75. Furthermore, it was investigated whether there is a significant, directly measurable uptake of water during annealing in moist atmospheres and whether water taken up from moist atmospheres can influence the diffusion of sodium.     

Effect of pressure on the refractive index and relative density of the CaO · Al2O3 · 6SiO2 glass

The refractive index for glass of the CaO · Al₂O₃ · хSiO₂ system with х = 6 in the range of pressures up to 6.0 GPa was measured using a polarization-interference microscope and an apparatus with diamond anvils. The changes in the relative density characterizing the compressibility of glass were estimated from the measured refractive indices within the framework of the theory of photoelasticity. The data were compared with the previous data for glasses of the same system with х = 2 and 4. The most compressible of the three glasses in the range 2.0-6.0 GPa was the CaO · Al₂O₃ · 6SiO₂ glass. For glasses with х = 2, 4 and 6 we calculated the degrees of polymerization of silicon-aluminum-oxygen network, NBO/T (NBO - non-bridging oxygen), which are determined as the ratio of the number of gram-ions of non-bridging oxygen atoms to the total number of gram-ions of network formers. The structure-chemical parameter NBO/T was calculated with due regard for the formation of triclusters and highly coordinated aluminum. The degree of polymerization of the CaO · Al₂O₃ · хSiO₂ glasses increases with increasing х, which agrees with the change of their relative density under pressure.     

Effect of carbon on the microstructural evolution of Zr66.7−xNi33.3Cx (x = 0, 1, 3) alloys during mechanical alloying

In the present paper, the effect of carbon on the microstructural evolution of Zr_66.7−xNi_33.3C_x (x = 0, 1, 3) alloys during mechanical alloying has been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that these three alloys undergo similar amorphization and crystallization processes, and the final milling product is a metastable fcc-Zr_66.7−xNi_33.3C_x phase. The carbon addition can shorten the milling time for the complete amorphization reaction and enhance the stability of the formed amorphous alloy, which can suppress the mechanically induced amorphous-crystalline phase transformation with further increasing milling time.     

Electrical conductivity of NbN-SiO2 films obtained by ammonolysis of Nb2O5-SiO2 sol-gel derived coatings

The studies of electrical conductivity of NbN-SiO₂ films are reported. To obtain these films, sol-gel derived xNb₂O₅-(100 − x)SiO₂ (where x = 100, 90, 80, 70, 60, 50 mol%) coatings were nitrided at 1200 °C. The nitridation process leads to the formation of some disordered structures, with NbN metallic grains dispersed in insulating SiO₂ matrix. The structure of the samples was studied using X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical conductivity was measured with the conventional four-terminal method in the temperature range from 5 to 280 K. The superconducting transition was not observed even for the sample that does not contain silica. All the samples exhibit negative temperature coefficient of resistivity. The results of conductivity versus temperature may be described on the grounds of a model proposed for a weakly disordered system.     

Influence of pulsed laser deposition rate on the microstructure and thermoelectric properties of Ca3Co4O9 thin films

The effects of deposition rate on the microstructure and thermoelectric (TE) properties of Ca₃Co₄O₉ thin films fabricated by pulsed laser deposition (PLD) technique were investigated. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM) revealed that a fast deposition rate resulted in not only low crystallinity but also the existence of the Ca_xCoO₂ secondary phase. Formation of Ca_xCoO₂ was inevitable during the thin film growth, and this was discussed from both structural and compositional point of view. With longer deposition interval or with sufficient oxygen at a lower deposition rate, the Ca_xCoO₂ phase was able to transit into the desired Ca₃Co₄O₉ phase during the coalescence process. The quality of the thin films was further analyzed by electrical properties measurements. The Ca₃Co₄O₉ thin film fabricated at a slower deposition rate was found to exhibit a low electrical resistivity of 9.4 mΩ cm and high Seebeck coefficient of 240 μV/K at about 700 °C, indicating a good quality film.     

The comparative structure, properties, and ionic conductivity of LiI + Li2S + GeS2 glasses doped with Ga2S3 and La2S3

The well known and characterized fast ion conducting (FIC) LiI + Li₂S + GeS₂ glass-forming system has been further optimized for higher ionic conductivity and improved thermal and chemical stability required for next generation solid electrolyte applications by doping with Ga₂S₃ and La₂S₃. These trivalent dopants are expected to eliminate terminal and non-bridging sulfur (NBS) anions thereby increasing the network connectivity while at the same time increasing the Li⁺ ion conductivity by creating lower basicity [(Ga or La)S_4/2]⁻ anion sites. Consistent with the finding that the glass-forming range for the Ga₂S₃ doped compositions is larger than that for the La₂S₃ compositions, the addition of Ga₂S₃ is found to eliminate NBS units to create bridging sulfur (BS) units that not only gives an improvement to the thermal stability, but also maintains and in some cases increases the ionic conductivity. The compositions with the highest Ga₂S₃ content showed the highest T_gs of ∼325 °C. The addition of La₂S₃ to the base glasses, by comparison, is found to create NBS by forming high coordination octahedral LaS₆³⁻ sites, but yet still improved the chemical stability of the glass in dry air and retained its high ionic conductivity and thermal stability. Significantly, at comparable concentrations of Li₂S and Ga₂S₃ or La₂S₃, the La₂S₃-doped glasses showed the higher conductivities. The addition of the LiI to the glass compositions not only improved the glass-forming ability of the compositions, but also increased the ionic conductivity glasses. LiI concentrations from 0 to 40 mol% improved the conductivities of the Ga₂S₃ glasses from ∼10⁻⁵ to ∼10⁻³ (Ω cm)⁻¹ and of the La₂S₃ glasses from ∼10⁻⁴ to ∼10⁻³ (Ω cm)⁻¹ at room temperature. A maximum conductivity of ∼10⁻³ (Ω cm)⁻¹ at room temperature was observed for all of the glasses and this value is comparable to some of the best Li ion conductors in a sulfide glass system. Yet these new compositions are markedly more thermally and chemically stable than most Li⁺ ion conducting sulfide glasses. LiI additions decreased the T_gs and T_cs of the glasses, but increased the stability towards crystallization (T_c − T_g).     

The effect of composition on UV-vis-NIR spectra of iron doped glasses in the systems Na2O/MgO/SiO2 and Na2O/MgO/Al2O3/SiO2

Glasses with the compositions xNa₂O · 10MgO · (90 − x)SiO₂, 10Na₂O · xMgO · (90 − x)SiO₂, 5Na₂O · 15MgO · xAl₂O₃ · (80 − x)SiO₂, xNa₂O · 10MgO · 10Al₂O₃ · (80 − x)SiO₂, 10Na₂O · 10MgO · xAl₂O₃ · (80 − x)SiO₂, 10Na₂O · 5MgO · 10Al₂O₃ · (80 − x)SiO₂ were melted and studied using UV-vis-NIR spectroscopy in the wavenumber range from 5000 to 30 000 cm⁻¹. At [Al₂O₃] > [Na₂O], the UV-cut off is strongly shifted to smaller wavenumbers and the NIR peak at around 10 000 cm⁻¹ attributed to Fe²⁺ in sixfold coordination gets narrower. Furthermore, the intensity of the NIR peak at 5500 cm⁻¹ increases. This is explained by the incorporation of iron in the respective glass structures.