Organic field-effect transistors

The paper reviews the recent year publications concerning organic field-effect transistors (OFETs). A lot of works have been performed to help understanding the structural and electrical properties of materials used to construct OFETs. It has been established that in partially ordered systems, the charge transport mechanism is thermally activated and field-assisted hopping transport and the hopping transport between disorder-induced localized states dominate over intrinsic polaronic hopping transport seen in organic single crystals. Many research attempts have been carried out on the design of air-stable organic semiconductors with a solution process which is capable of producing OFETs with excellent properties and good stability when subjected to multiple testing cycles and under continuous electrical bias. Recent experiments have demonstrated ambipolar channel conduction and light emission in conjugated polymer FETs. These achievements are the basis for construction of OLED based displays driven by active matrix consisting of OFETs.     

Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

We demonstrate a reconfigurable black phosphorus electrical field transistor,which is van der Waals heterostructured with few-layer graphene and hexagonal boron nitride flakes.Varied homojunctions could be realized by controlling both source–drain and top-gate voltages.With the spatially resolved scanning photocurrent microscopy technique,photovoltaic photocurrents originated from the band-bending regions are observed,confirming nine different configurations for each set of fixed voltages.In addition,as a phototransistor,high responsivity(～800 mA/W)and fast response speed(～230μs)are obtained from the device.The reconfigurable van der Waals heterostructured transistors may offer a promising structure towards electrically tunable black phosphorus-based optoelectronic devices.     

Resonant tunneling field-effect transistors

We report an experimental project to incorporate double-barrier tunnel structures into three-terminal devices. These devices have the negative-differential-resistance (NDR) features of the double barrier, and the added flexibility of a third controlling electrode. One way to make such a device involves the series combination of a double-barrier tunnel structure with a field-effect transistor. We have realized this concept in two types of devices, using samples grown by metalorganic chemical vapor deposition. The devices consist of a GaAsAl_xGa_1−xAs double-barrier tunneling heterostructure, the current through which is controlled by either an integrated vertical field-effect transistor or a planar metal-semiconductor field effect transistor. The voltage location and peak-to-valley current ratio of the NDR present in the source-drain circuit can be modulated with gate voltage. Experimental results for four samples are presented.     

Microwave complementary doped-channel field-effect transistors

In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The _ft$f_t$ and _fmax$f_{max}$ are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved.     

Investigation of positive bias temperature instability for monolayer polycrystalline MoS_2 field-effect transistors

In recent years,molybdenum disulfide(Mo S2)has exhibited remarkable electrical,mechanical and optical properties because of its ultrathin body thickness,flexibility and direct bandgap for photo response[1].     

基于金属氧化物半导体场效应管的Marx发生器

给出了一种基于半导体开关的脉冲功率源的设计原理和方法。与标准的Marx发生器相比,用金属氧化物半导体场效应管(MOSFET)替代气体火花隙开关,用二极管替代电阻,由于可重复频率运行,所以能够有效地减少电路损耗。由于电路器件特性差异不同,在实验中采取对每一级的开关驱动信号进行单独调节,以补偿器件差异对同步性带来的影响。另外,实验对开关进行光纤隔离,而对强弱电的隔离采用DC-DC转换器,这不仅有利于保护实验设备,而且对Marx多级电路的同步性也有很大的贡献。设计的Marx发生器级数为16级,并给出了单次脉冲和重复频率两种情况下的实验结果。     

Conductance properties in spin field-effect transistors

Conductance properties in spin field-effect transistors (SFET) are studied by taking into account the Rashba spin-orbit coupling strength, the presence of external magnetic field, the angle between the direction of magnetization and the conductance band mismatch between the ferromagnetic contacts and the channel. It is shown that the conductance of the SFET has high peaks while the value of external magnetic field varies. These peaks become more and more pronounced with the potential barriers strength increasing. The conductance peaks also appear by increasing the strength of the spin-orbit coupling. It is found that the conductance exhibits quantum oscillating behavior when varying the angle between the direction of magnetization in the two contacts. The influence of conductance band mismatch between the contacts and channel is also discussed.     

Multi-layer ambipolar light-emitting organic field-effect transistors

Mutli-layer light-emitting organic field-effect transistors (OLETs) are shown to have high internal quantum efficiencies approaching 5%, a value much higher than the conventional organic light-emitting diodes (OLEDs). This work re-examines some data reported in the literature on OLETs and put forward a model that explains the charge transport and light emission process. Our analyses suggest that the reported improvements on the internal quantum efficiency of OLETs are directly linked to charge recombination and light emission and is independent of the drain-source current as well as the gate-induced charge density in the accumulation layer. Such independence allows the internal quantum efficiency to increase as the drain-source current decreases. The process differs from the charge transport in OLEDs where recombination and light emission are directly tied to the injected space charge densities thereby preventing the internal quantum efficiency of OLEDs to increase even when the device current is lowered.     

Lateral scaling in carbon-nanotube field-effect transistors

We have fabricated carbon-nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky-barrier modulation at the contacts to bulk switching. We also find that the current through the bulk portion is independent of gate length for any gate voltage, offering direct evidence for ballistic transport in semiconducting carbon nanotubes over at least a few hundred nanometers, even for relatively small carrier velocities.     

Thermoelectric effects in spin field-effect transistors

We investigate the thermoelectric effects in a spin field-effect transistor with ferromagnetic leads held at different temperatures. The thermopower S and thermoelectric figure of merit ZT oscillate with the increase of the Rashba spin-orbit coupling strength. The oscillation amplitude of ZT decreases with increasing the spin polarization. S and ZT are strongly influenced by the interfacial barrier strength Z, exhibiting a nonmonotonous change with Z. The thermoelectric effects are also manipulated by the magnetization configuration of the ferromagnetic leads. It is expected that the present study of the thermoelectric effects is helpful in the design of thermoelectric devices.     

Incompressible electron phase in field-effect transistors

The formation of regions of compressible and incompressible phases in the quantum Hall effect regime has been considered for a two-dimensional (2D) electron system that is created in a field-effect transistor. This effect arises from long-period fluctuations of the density of ionized donors supplying electrons to the 2D system. It is shown that the motion of these regions caused by variations of the average electron density gives rise to minima in the capacitance of the capacitor formed by the 2D electron system and the transistor gate. When the corrections to the capacitance are small, the shape of the minima reproduces the donor density distribution function. Experimental data are presented that demonstrate good agreement with the predictions of the model.     

Graphene field-effect transistors with ferroelectric gating

Recent experiments on ferroelectric gating have introduced a novel functionality, i.e., nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (n(BG)) provided by normal dielectric gating. More importantly, we prove that n(BG) can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric field-effect transistors with resistance change over 500% and reproducible no-volatile switching over 10? cycles.     

Low-frequency noise in Schottky-gate field-effect transistors

A three-section analytic model of a Schottky-gate field-effect transistor is used to calculate the drain-current modulation sensitivity to low-frequency fluctuations in various regions of the active layer. The examined noise sources in the conducting channel and in the gate depletion region are fluctuations of the carrier and bound-charge concentrations, whose spectra can include generation-recombination and flicker components. The theoretical results are compared with measurements of low-frequency current noise.Presented at All-Union Coordinating Conference Low-Frequency Noise in Semiconductor Devices (Chernogolovka, Moscow Region, June, 1991).St. Petersburg State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 36, No. 12, pp. 1118–1127, December, 1993.     

基于金属氧化物半导体场效应管的Marx发生器

给出了一种基于半导体开关的脉冲功率源的设计原理和方法。与标准的Marx发生器相比,用金属氧化物半导体场效应管（MOSFET）替代气体火花隙开关,用二极管替代电阻,由于可重复频率运行,所以能够有效地减少电路损耗。由于电路器件特性差异不同,在实验中采取对每一级的开关驱动信号进行单独调节,以补偿器件差异对同步性带来的影响。另外,实验对开关进行光纤隔离,而对强弱电的隔离采用DC-DC转换器,这不仅有利于保护实验设备,而且对Marx多级电路的同步性也有很大的贡献。设计的Marx发生器级数为16级,并给出了单次脉冲和重复频率两种情况下的实验结果。     

柔性有机场效应晶体管研究进展

柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域. 关键词： 柔性 晶体管 有机/聚合物 溶液加工     

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

In this article we give an overview over the physical mechanisms involved in the electronic transport in ultrathin-body SOI Schottky-barrier MOSFETs. A strong impact of the SOI and gate oxide thickness on the transistor characteristics is found and explained using experimental as well as simulated data. We elaborate on the influence of scattering in the channel and show that for a significant barrier the on-state current is insensitive to scattering once the mean free path for scattering is larger than a characteristic length scale. In addition, recent efforts to lower the Schottky barrier at the source/drain channel interfaces are presented. Using dopant segregation during silicidation significantly lower effective Schottky barriers can be realized that allow for high performance SB-MOSFET devices. PACS 85.30.Tv; 85.35.-p; 73.30.+y     

微晶硅薄膜晶体管稳定性研究

对有源区处于结构过渡区的微晶硅底栅薄膜晶体管，测试其偏压衰退特性时，观察到一种“自恢复”的衰退现象.当栅和源漏同时施加10 V的偏压时，测试其源-漏电流随时间的变化，发现源-漏电流先衰减、而后又开始恢复上升的反常现象.而当采用栅压为10 V、源-漏之间施加零偏压的模式时，源-漏电流随时间呈先是几乎指数式下降、随之是衰退速度减缓的正常衰退趋势.就此现象进行了初步探讨. 关键词： 过渡区硅材料 微晶硅薄膜晶体管 稳定性 自恢复衰退     

Band-to-band tunneling in carbon nanotube field-effect transistors

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate voltage range for switching the device on or off, current flow is controlled here by the valence and conduction band edges in a bandpass-filter-like arrangement. We discuss how the structure of the nanotube is the key enabler of this particular one-dimensional tunneling effect.     

Ultrafast characterization of in-plane-gate field-effect transistors: parasitics in laterally gated transistors

In-plane-gate field-effect transistors are probed by femtosecond electrooptic sampling. Ultrafast response of the transistors is dominated by a displacement current induced by parasitic gate-drain capacitance. Intrinsic and parasitic gate-drain capacitances of various transistor structures are obtained from displacement-current characteristics and are in quantitative agreement with the calculation of planar capacitances. Intrinsic gate-drain capacitances are in the order of 100 aF, while parasitic gate-drain capacitances are between 1.7 and 4.8 fF, more than ten times that of intrinsic gate-drain capacitances. Reduction in parasitic capacitance by a factor of two is achieved by means of grounded shields and is confirmed by calculation. The grounded-shields screen parasitic electric fields and transform parasitic coupling into a part of the waveguide coupling. This reduction in parasitic capacitance is the first demonstration that the parasitic field effect is controlled artificially by nanometre-scale device technology.     

Electronic spin drift in graphene field-effect transistors

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n approximately 3.5 x 10(16) m(-2)), for dc fields of about +/- 70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as +/- 50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.