Growth and characterization of InxBi2−xTe3 single crystals

The V–VI group narrow band gap compounds are known to have important photoconductivity and thermoelectric properties. Among these, Bi₂Te₃ is the most potential material for thermoelectric devices having a direct band gap of 0.16 eV. There has been ample study reported on crystal growth and polycrystalline thin films of both pure and indium doped Bi₂Te₃ pertaining to its basic semiconducting, optoelectronic and thermoelectric properties. It has been shown that on exceeding certain limiting concentration of indium in Bi₂Te₃, the conductivity changes from p-type to n-type. However, there is hardly any work reported in literature on crystal growth, dislocation etching and optical band gap of In_xBi_2?xTe₃ (x=0.1, 0.2, 0.5) single crystals. The authors have grown their single crystals using the zone melting method. The freezing interface temperature gradient of 70 °C/ cm^?1 has been found to yield the best quality crystals obtainable at the growth rate of 0.4 cm/h. The as-grown crystals have been observed to exhibit certain typical features on their top free surfaces. The crystals have been characterized using XRD technique. A chemical dislocation etchant has been used for estimating perfection in terms of dislocation density in the crystals. The optical absorption was measured in the wave number range 500 to 4000 cm^?1. The transitions in all the cases were observed to be allowed direct type. The detailed results are reported in the paper.     

Growth of CuSO4 · 5H2O single crystals and study of some of their properties

Large single crystals of copper sulfate pentahydrate CuSO₄ · 5H₂O of optical quality have been grown; they can be applied as broadband UV optical filters. Their transmission spectra are measured. The crystal thermal stability is investigated and the onset temperature of dehydration is determined to be 46°C.     

Growth improvement and characterization of AgGaxIn1−xSe2 chalcopyrite crystals using the horizontal Bridgman technique

AgGa_xIn_1?xSe₂ single crystals with x=0.4 have been grown by the horizontal Bridgman technique for nonlinear optical application requires phase matching. High purity polycrystalline synthesis of AgGa_xIn_1?xSe₂ was carried out at 850 °C, which is a relatively lower temperature compared to those in earlier reports, thus reducing secondary phase formation. An average Ga:In ratio of 62:38 (±3%) was measured using energy dispersive spectroscopy (EDS). As grown, a single crystal shows very high IR transmission of ～65% in the spectral range of 4000–600 cm^?1. There was no significant change in its IR transmission after annealing it at 500 °C for 20 days in vacuum in the presence of AgGa_xIn_1?xSe₂ powder. This indicates a low concentration of defects in the crystal. The results demonstrate that the improved new synthesis method for crystal growth was promising and that the quality of the crystal was good.     

Growth and characterization of near-band-edge transitions in β-In2S3 single crystals

Single crystals of β-In₂S₃ were grown by chemical vapor transport method using ICl₃ as a transport agent. The below and above band-edge transitions in β-In₂S₃ have been characterized using optical absorption and photoluminescence (PL) measurements in the temperature range 20–300 K. Thermoreflectance (TR) and photoconductivity (PC) measurements were carried out to verify the band-edge nature of the diindium trisulfide tetragonal crystals. Experimental analyses of the transmittance, PL, PC, and TR spectra of β-In₂S₃ confirmed that the chalcogenide compound is a direct semiconductor with a band gap of about 1.935 eV at 300 K. β-In₂S₃ is familiar with its defect nature. For the β-In₂S₃ crystals, two defect emissions and two above band-edge luminescences were simultaneously detected in the PL spectra at low temperatures. The energy variations of the defect emissions showed temperature-insensitive behavior with respect to the temperature change from 20 to 300 K. Temperature dependences of transition energies of the near-band-edge (NBE) transitions below and above band gap are analyzed. The origins for the NBE transitions in the β-In₂S₃ defect crystals are discussed.     

Modeling the distribution of Ga and Sb impurities in Ge‒Si single crystals grown by double feeding of the melt: Growth conditions for homogeneous single crystals

Mathematical modeling of the distribution of Ga and Sb impurities in homogeneous (with respect to the content of the main components) single crystals of Ge–Si alloys, grown by double feeding of the melt, has been performed in the Pfann approximation. It is shown that the axial gradient of impurity concentration in Ge–Si crystals can be controlled in wide limits by changing the ratio of crystallization rate and the rates of feeding of the melt by silicon and germanium rods. The conditions for growing alloy single crystals, homogeneous both with respect to the content of the main components and to the impurity concentration distribution, have been determined.     

Growth and study of single crystals of Pb1 − x BaxSc0.5Nb0.5O3 solid solutions

Crystals of Pb_{1 ? x} Ba_xSc_0.5Nb_0.5O₃ solid solutions with 0 ≤ x ≤ 0.58 have been grown by the method of mass crystallization from flux. It is established that, unlike the concentration dependence of the corresponding ceramic, the concentration dependence of the temperature T _m (the maximum dielectric constant ε in crystals) does not attain saturation. Cooling of crystals with x ≤ 0.04 resulted in a spontaneous transition from the relaxor to the macrodomain ferroelectric state. In crystals with a higher barium content, the relaxor state is “locked in.”     

Growth and characterization of Fe1 ? x M x VO4 single crystals (M = Al, Cr, Co, Ga)

Triclinic Fe_{1 ? x} M _x VO₄ single crystals (M = Al, Ga, Co, Cr) have been grown by the flux method from systems based on PbO-V₂O₅. Their crystallographic parameters are determined by powder X-ray diffraction. Fe_{1 ? x} Ga _x VO₄ single crystals (x = 0?C0.3) with a volume more than 1cm³ are grown using the seeding technique. The temperature and field dependences of magnetization and magnetic susceptibility of the grown Fe_{1 ? x} Ga _x VO₄ and Fe_{1 ? x} Al _x VO₄ single crystals (x = 0.3 in the solution-melt) are reported. It is shown that the magnetizations of these crystals exceed that of FeVO₄, and both of their antiferromagnetic phase transitions are shifted to lower temperatures.     

Growth of Er2(SO4)3 ⋅ 8H2O crystals and study of their structure and properties

New crystals of the composition Er₂(SO₄)₃ ? 8H₂O have been synthesized by the method similar to that used for synthesis of (CH₃)₂NH₂Al(SO₄)₂ ? 6H₂O. The synthesized crystals were studied by the X-ray diffraction method. The crystals are monoclinic C2/c) and contain no (CH₃)₂NH₂ ions. It is established that, contrary to DMAAS crystals, Er₂(SO₄)₃ ? 8H₂O crystals undergo no phase transitions and possess neither ferroelectric nor ferroelastic properties.     

Evolution and structure of low-angle grain boundaries in 6H–SiC single crystals grown by sublimation method

KOH etching and high-resolution X-ray diffractometry (HRXRD) were used to study the evolution and structure of low-angle grain boundaries (LAGBs), which extended along 〈1 -1 0 0〉 in 6H–SiC bulk crystals grown by the sublimation method. It was found that LAGBs formed in the growth process consisted of an array of threading dislocations and took different configurations under different radial temperature gradients (RTGs). HRXRD results proved that the domain at one side of LAGBs formed under a low radial temperature gradient has only tilts around the c-axis with respect to the other domain at another side of LAGBs.     

Three-dimensional visualization and characterization of morphology and internal microstructural features of primary silicon crystals in a cast Al–Si base alloy

Primary Si crystals are usually present in the cast microstructures of near-eutectic, eutectic, and hyper-eutectic Al–Si base alloys. Three-dimensional digital images of individual primary Si crystals present in a permanent mold cast unmodified Al-12 wt% Si-1 wt% Ni base alloy are reconstructed using a combination of montage serial sectioning and three-dimensional digital image processing techniques. Octahedral, prismatic, and plate-like three-dimensional morphologies of the primary Si crystals are present in the microstructure. Some of the primary Si crystals contain interior regions/islands of Al-alloy that are completely enclosed in the corresponding Si crystals indicating certain variations in the crystal growth velocities during the evolution of these crystals. The boundaries of these interior regions/islands are non-faceted smooth and curved indicating re-melting of the Al-rich islands and re-dissolution of some Si near these internal boundaries in the Al-alloy as a result of the heat generated by liquid-to-solid transformation of Si away from the islands.     

Enhanced persistent photoconduction in CuInS2–ZnIn2S4 alloys single crystals and processes of its relaxation

ABSTRACT

Photoelectrical response in CuInS₂–ZnIn₂S₄ alloys single crystals was analysed in the low temperature region from 30 K up to 100 K. The molar ratio of ZnIn₂S₄ in the alloys was varied in the range 0 mol%?16 mol%. The crystals with up to 12 mol% were the single-crystalline, meanwhile those with 16 mol% were the two phase ones. We have analysed spectral distribution of their photocurrent at different temperatures and the following relaxation towards the stationary values. The photo-induced photoconductivity phenomena were identified. Moreover the long-lasting relaxations with characteristic times exceeding 1.5×10³ sec were observed at lowest temperatures. They used to shorten exponentially with increasing temperature showing thermally activated behaviour. The main parameters of the photoconductivity kinetics and their temperature dependencies were determined. The observed behaviour was explained by the slow multicenter recombination due to the combined effect of different trapping and recombination centers. The effects of both – “fast” and “slow” recombination centers were taken into account.     

Growth and characterization of lead-free Ba(1−x)CaxTi(1−y)ZryO3 single crystal

A lead-free Ba_(1?x)Ca_xTi_(1?y)Zr_yO₃ (BCZT) single crystal (x=0.08, y=0.26) was grown by the Czochralski (CZ) method in a mixed flux of TiO₂ and ZrO₂. The composition of as-grown BCZT was analyzed by electron probe micro-analysis. The structure, dielectric properties and phase transition were investigated at different temperatures. The X-ray diffraction results confirmed that the structure of the as-grown BCZT crystal was cubic both at 25 °C and 500 °C. The temperature dependence of the dielectric constant and Raman spectra characterization revealed that there was a phase transition from cubic to tetragonal, which happened between 200 K and 250 K. With increasing frequency, the Curie temperature shifted towards high temperature.     

Electromechanical and electro-optic properties of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 single crystals

Single crystals in the xBiScO₃–yBiGaO₃–(1−x−y)PbTiO₃ (BS–BG–PT) system were grown by the high temperature solution method using Pb₃O₄ and Bi₂O₃ as the flux. The dielectric permittivity (ε_r) at room temperature for unpoled tetragonal crystals was determined to be 500–600 with dielectric loss tangents less than 0.3%. The Curie temperature was found to be around ∼420–450°C, with a dielectric maximum, exhibiting relaxor behavior. The longitudinal piezoelectric coefficient (d₃₃) was found to be ∼300 pC/N for 〈0 0 1〉 oriented tetragonal crystals with electromechanical coupling factor (k₃₃) of 75%, with a shear mode, d₁₅∼290 pC/N and k₁₅∼45%, lateral mode, d₃₁∼−55 pC/N and k₃₁∼−37%. The remnant polarization (P_r) was 46 μC/cm² with a coercive field (E_c) of 43 kV/cm at 1 Hz and DC field of 60 kV/cm. The linear electro-optic (E-O) coefficients of poled crystals determined using an automated scanning Mach–Zehnder interferometer method at room temperature and wavelength of 632.8 nm were r₃₃=36 and r₁₃=4 pm/V, respectively.     

Structural studies of AgPO3–MoO3 glasses using solid state NMR and vibrational spectroscopies

Vitreous samples (1-x) AgPO₃–x MoO₃ (0 ≤ x ≤ 0.5) were prepared by conventional melt-quenching and characterized by Differential Scanning Calorimetry (DSC). The structural evolution of the vitreous network was monitored by ³¹P solid state nuclear magnetic resonance and Raman scattering, and assignments were aided by corresponding studies on the model compound AgMoO₂PO₄. The ³¹P MAS-NMR data differentiate between species having two, one, and zero P―O―P linkages (Q⁽²⁾ Q⁽¹⁾, and Q⁽⁰⁾ species), respectively. Interatomic connectivities involving these units are revealed by two-dimensional INADEQUATE data, utilizing the formation of double quantum coherences mediated by indirect ³¹P–³¹P spin–spin interactions via P―O―P linkages. As this method discriminates against isolated P atoms, it also serves as an important spectral editing tool for constraining lineshape fits. ⁹⁵Mo NMR data and Raman spectra suggest that the Mo species are most likely six-coordinate, forming four P―O―Mo linkages and are otherwise invariant with composition, except at MoO₃ contents ≥ 40 mole %, where some Mo―O―Mo bonding and/or clustering is observed.     

Growth and properties of mixed K2Ni x Co1−x (SO4)2 · 6H2O crystals

Optically homogeneous mixed K₂Ni _x Co_{(1 ? x)}(SO₄)₂ · 6H₂O crystals are grown from solutions of different compositions by the temperature-reduction technique in static and dynamic regimes. The optical characteristics of the grown crystals are measured: transmittance reaches 80% in the wavelength range of 240–290 nm and no more than 9% in the visible spectral range. The thermal stability of the crystals is studied. It is established that the thermal stability of mixed K₂Ni _x Co_{1 ? x} (SO₄)₂ · 6H₂O crystals is higher than that of K₂Co(SO₄)₂ · 6H₂O crystal. The defects of the mixed crystals grown in static and dynamic regimes are investigated by X-ray topography.     

Growth and characterization of REBa2Cu3O7−δ superconductor single crystals obtained from xenotime mineral

Single crystals of REBa₂Cu₃O_7−δ (RE=natural mixture of Y and heavy lanthanides in the single crystals) superconductor were successfully grown using rare-earth oxides extracted from xenotime mineral, allowing an alternative and simple route for superconductor single-crystal production. The methodology to extract the rare-earth mixed oxides from the xenotime mineral has three main steps: alkaline fusion, acid lixiviation and oxalic precipitation. Large single crystals with a typical 5×5×0.03 mm³ size were obtained by using a CuO-BaO self-flux and were characterized by scanning electron microscopy (SEM), energy-dispersive electron spectroscopy, X-ray diffraction, magnetic measurements and nanoindentation. The composition of the rare-earth elements of the crystal was different from the starting mixture, possibly due to the different solubilities of the elements in the melt. The final crystal stoichiometry was RE:Ba:Cu=1:2:3. X-ray diffraction analysis showed highly oriented c-axis (c=11.716±0.002 Å). The critical temperature was determined to be around T_C≅88-89 K after the crystals have been submitted to oxygen annealing. Hardness and elastic modulus for ab- and b(a)c-planes were 8.5±0.5 and 160±20 GPa, respectively.     

Micro-structural studies of GeSe2–Ga2Se3–MX (MX = CsI and PbI2) glasses using Raman spectra

Microstructure of the chalcohalide glasses: GeSe₂–Ga₂Se₃–CsI and GeSe₂–Ga₂Se₃–PbI₂ ternary system were investigated by Raman spectra, lifetime of Dy³⁺ infrared emission and glass transition temperature (T_g). The evolution of the Raman spectra shows that the fundamental structural groups of these studied glasses consist of [Ge(Ga)Se₄] tetrahedral and some complex structure units [Ge(Ga)I_xSe_4?x](x = 1–4). The x value varied when the different iodide was added in Ge–Ga–Se matrix. For GeSe₂–Ga₂Se₃–CsI glasses, the [Ge(Ga)I_xSe_4?x](x = 1–4) mixed-anion tetrahedral and [Ga₂I₇]^? units occurred. For GeSe₂–Ga₂Se₃–PbI₂ glasses, the [Ge(Ga)I₂Se₂], [Ge(Ga)I₃Se] units can be formed. The changes of Dy³⁺ infrared emission lifetime and T_g support the results. Additionally, [PbI_n] structural units will be formed in GeSe₂–Ga₂Se₃–PbI₂ glasses due to high form-ability of these units when the PbI₂ content is high.     

Synthesis, characterization, and single crystal X-ray diffraction studies of cis-Ph2C2H2(η5-C5H4)2Ca(THF)2

cis-[(1,2-diphenyl-1,2-dicyclopentadienyl)ethanediyl]bis(tetrahydrofuran)calcium is prepared by reductively coupling phenylfulvene with activated calcium to produce cis and trans isomers which can be separately crystallized. The cis isomer crystallizes in the monoclinic space group P2₁/c. The cell parameters are: a = 9.7006(1), b = 18.9839(1), c = 14.2018(2) Å, = 91.263(1)°, V = 2614.70(5) ų, D _calc = 1.252 mg/m³, and Z = 4. Spectroscopic and crystallographic data for the cis-isomer are presented and discussed.     

Crystal growth,structure, crystalline perfection and characterization of zinc magnesium ammonium sulfate hexahydrate mixed crystals ZnxMg(1−x)(NH4)2(SO4)2·6H2O

Mixed crystals Zn_xMg_(1?x)(NH₄)₂(SO₄)₂·6H₂O of the two well-known Tutton's salts Zn(NH₄)₂(SO₄)₂·6H₂O and Mg(NH₄)₂(SO₄)₂·6H₂O were grown with varying molar proportions (x=0.10–0.90) by slow evaporation solution growth technique. The mixed crystal Zn_0.54Mg_0.46(NH₄)₂(SO₄)₂·6H₂O is crystallizing in monoclinic system with space group P2₁/c and cell parameters a=6.2217(4) Å, b=12.5343(7) Å, c=9.2557(6) Å, β=106.912(3)°. The coexistence of zinc and magnesium ions in the mixed crystal was confirmed by inductively coupled plasma (ICP), atomic absorption spectroscopy (AAS) and energy dispersive X-ray spectroscopy (EDS). Compositional dependence of lattice parameters follows Vegard's relations. Slight variations are observed in FT-IR and XRD of pure and mixed crystals. Comparison of crystalline perfection as evaluated by high-resolution X-ray diffraction (HRXRD) for mixed crystals of various proportions reveals a reasonably good crystalline perfection for the mixed crystal with nearly equimolar ratio of Zn and Mg. The surface morphology of the mixed crystals changing with composition was studied by scanning electron microscopy (SEM). UV–vis studies reveal that the transparency of the mixed crystals was not much affected.     

Nanostructured crystals of fluorite phases Sr1 − x R x F2 + x and their ordering: 9. The defect crystal and real structure of quenched fluorite phases Sr1 − x Ce x F2 + x (x = 0–0.5)

A Sr_0.7Ce_0.3F_2.3 crystal (CaF₂ type, sp. gr. $Fm\bar 3m$ ), obtained by quenching from melt, has been studied for the first time by X-ray diffraction. Fluorine vacancies and interstitial anions are found in the 8c and 32f sites, respectively. The defect ratio in the Sr_0.7Ce_0.3F_2.3 structure corresponds to the tetrahedral cluster configuration of defects {Sr_{4 ? n} Ce _n F₂₆}. The defect structure of quenched (at a rate of ～25 K/min) crystal differs from that of a crystal grown from melt (cooling at a rate of ～3 K/min) by the displacement of some cations (presumably Ce³⁺) along the threefold axis to the 32f site and the anisotropy of thermal vibrations of ions in the cluster core (F _int(32f)3). The concentration dependence of the lattice parameters of quenched Sr_{1 ? x} Ce _x F_{2 + x} phases (x = 0–0.5) is described by a third-order polynomial: a = 5.80009 + 1.166518 × 10^?3 x ? 1.124969 × 10^?5 x ² + 8.258155 × 10^?8 x ³. The compositional dependence of microdistortions is also nonlinear; maximum microdistortions are observed in the SrF₂ crystal. They decrease with an increase in the cerium concentration x to ～ 0.35. The minimum in the range x = 0.30–0.35 correlates with a composition corresponding to the peak (at x ～ 0.29) in the melting curves of the fluorite phase estimated from the phase diagram of the SrF₂-CeF₃ system (the method of thermal analysis).