Spectroscopic properties of Er-doped xGeO2-(80 − x)TeO2-10ZnO-10BaO glasses

Erbium-doped glasses with composition xGeO₂-(80 − x)TeO₂-10ZnO-10BaO were prepared by melt-quenching technique. The phonon sideband spectra and the optical absorption band edges for the host matrix were confirmed by means of the spectral measurements. Standard Judd-Ofelt calculations have been completed to these glasses. The dependence of up-conversion and infrared emission under 980 nm excitation on the glass composition was studied. The quantum efficiencies for the ⁴I_13/2 → ⁴I_15/2 transition of trivalent erbium in the glasses were estimated.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC

We succeeded in growing high-crystalline-quality thick (1 0 1¯ 1¯) Ga_0.92In_0.08N films on a grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC underlying layer. We also fabricated GaInN/GaN multiple quantum wells (MQWs) with a peak wavelength of 580 nm on a high-crystalline-quality thick GaInN film. The photoluminescence intensity of the MQWs is about six times higher than that of MQWs grown on planar GaN and twice as high as that of MQWs grown on a GaN underlying layer having the same grooved structure.     

Spectrometric and ellipsometric studies of (1 − x)TiO2 · xLn2O3 (Ln = Nd, Sm, Gd, Er, Yb) thin films

Spectrometric and ellipsometric studies of (1 − x)TiO₂ · xLn₂O₃ (Ln = Nd, Sm, Gd, Er, Yb; x = 0.33, 0.5) thin films at room temperature were performed. The obtained dispersion dependences of refractive indices are successfully described by the optical-refractometric relation. The dependence of optical pseudogap and refractive indices on composition and molar mass of the films is investigated. The influence of compositional disordering on the energy width of the exponential absorption edge is studied.     

Studies of some mechanical and optical properties of: (70 − x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Specimens of the glassy system: (70 − x)TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by the melt-quenching. An ultrasonic pulse-echo technique was employed, at 5 MHz, for measuring: the ultrasonic attenuation, longitudinal and shear wave velocities, elastic moduli, Poisson ratio, Debye temperature and hardness of the present glasses. It is found that the gradual replacement of TeO₂ by Li₂O in the glass matrix up to 30 mol% leads to decrease the average crosslink density and rigidity of prepared samples which affects the properties, i.e., the hardness, ultrasonic wave velocities and elastic moduli are decreased, while the Poisson ratio and the ultrasonic attenuation are increased. Also, optical absorption spectra were recorded in the range, 200-800 nm for these glasses. The obtained results showed that a gradual shift in the fundamental absorption edge toward longer wavelengths occurred. Values of both of the optical energy gap, E_opt, and width tails, ΔE, are determined. It is observed that E_opt is decreased and ΔE increased with the increase of Li₂O in the glass matrix up to 30 mol%. The compositional dependences of the above properties are discussed and correlated to the structure of tested glasses.     

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1−xN on Si (1 1 1)

We present MOVPE-grown, high-quality Al_xGa_1−x N layers with Al content up to x=0.65 on Si (1 1 1) substrates. Crack-free layers with smooth surface and low defect density are obtained with optimized AlN-based seeding and buffer layers. High-temperature AlN seeding layers and (low temperature (LT)/high temperature (HT)) AlN-based superlattices (SLs) as buffer layers are efficient in reducing the dislocation density and in-plane residual strain. The crystalline quality of Al_xGa_1−xN was characterized by high-resolution X-ray diffraction (XRD). With optimized AlN-based seeding and SL buffer layers, best ω-FWHMs of the (0 0 0 2) reflection of 540 and 1400 arcsec for the (1 0 1¯ 0) reflection were achieved for a ∼1-μm-thick Al_0.1Ga_0.9N layer and 1010 and 1560 arcsec for the (0 0 0 2) and (1 0 1¯ 0) reflection of a ∼500-nm-thick Al_0.65Ga_0.35N layer. AFM and FE-SEM measurements were used to study the surface morphology and TEM cross-section measurements to determine the dislocation behaviour. With a high crystalline quality and good optical properties, Al_xGa_1−x N layers can be applied to grow electronic and optoelectronic device structures on silicon substrates in further investigations.     

Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1)

The high dislocation density (2×10⁷/cm² for a thickness of 7 μm) in CdTe(2 1 1)B on Ge(2 1 1) has become a roadblock for the technological exploitation of this material. We present a systematic study of in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×10⁶/cm² was achieved by optimizing the growth conditions and annealing the samples in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements.     

Investigation of nonpolar (1 1 2¯ 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy

Structural and optical properties of nonpolar a-plane ZnO films grown with different II/VI ratios on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy were investigated. Even by increasing the II/VI ratio across the stoichiometric flux condition a consistent surface morphology of striated stripes along the ZnO 〈0 0 0 1〉 direction without any pit formation was observed, which is contrary to polar c-plane ZnO films. Root mean square surface roughness, full width at half maximum values of X-ray rocking curves, defect densities, and photoluminescence were changed with the II/VI ratio. The sample grown with stoichiometric flux condition showed the lowest value of rms roughness, the smallest threading dislocation and stacking fault densities of ∼4.7×10⁸ cm⁻² and ∼9.5×10⁴ cm⁻¹, respectively, and the highest intensity of D^oX peak. These results imply that the stoichiometric flux growth condition is suitable to obtain superior structural and optical properties compared to other flux conditions.     

Properties of Sm‐doped CaNb2O6 thin films deposited by radio‐frequency magnetron sputtering

Sm‐doped CaNb₂O₆ (CaNb₂O₆:Sm) phosphor thin films were prepared by radio‐frequency magnetron sputtering on sapphire substrates. The thin films were grown at several growth temperatures and subsequently annealed at 800 °C in air. The crystallinity, surface morphology, optical transmittance, and photoluminescence of the thin films were investigated by X‐ray diffraction, scanning electron microscopy, ultraviolet‐visible spectrophotometry, and fluorescence spectrophotometry, respectively. All of the thin films showed a main red emission radiated by the transition from the ⁴G_5/2 excited state to the ⁶H_9/2 ground state of the Sm³⁺ ions and several weak bands under ultraviolet excitation with a 279 nm wavelength. The optimum growth temperature for depositing the high‐quality CaNb₂O₆:Sm thin films, which was determined from the luminescence intensity, was found to be 400 °C, where the thin film exhibited an orthorhombic structure with a thickness of 370 nm, an average grain size of 220 nm, a band gap energy of 3.99 eV, and an average optical transmittance of 85.9%. These results indicate that the growth temperature plays an important role in controlling the emission intensity and optical band gap energy of CaNb₂O₆:Sm thin films.     

Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

We have succeeded in effectively stopping the propagation of basal stacking faults in (1 1 −2 2) semipolar GaN films on sapphire using an original epitaxial lateral overgrowth process. The growth conditions were chosen to enhance the growth rate along the [0 0 0 1] inclined direction. Thus, the crystal expands laterally until growth above the a-facet of the adjacent crystal seed, where the basal stacking faults emerge. The growth anisotropy was monitored using scanning electron microscopy. The faults filtering and improvement of crystalline quality were attested by transmission electron microscopy, X-ray diffraction and low temperature photoluminescence, which exhibits high intensity band-edge emission with low stacking faults related emission.     

Influence of metal organic and inorganic precursors on spray pyrolyzed ceramic MgO (2 0 0) thin films for epitaxial over layers

The MgO (2 0 0) surface is widely used as a substrate for epitaxial growth of superconducting and ferro-electric films. Highly oriented, single crystalline, extremely flat and transparent MgO films have been successfully deposited on quartz substrates by the chemical spray pyrolysis technique using economically viable metal organic and inorganic precursors under optimized conditions at the substrate temperature of 600 °C. Thermal analysis (TGA/DTA) in the temperature range 30-600 °C with the heating rate of 10 °C/min revealed the decomposition behavior of the precursors and confirmed the suitable substrate temperature range for film processing. The heat of reaction, ΔH due to decomposition of metal organic precursor contributed additional heat energy to the substrate for better crystallization. The intensity of the (2 0 0) peak in X-ray diffraction (XRD) measurements and the smooth surface profiles revealed the dependency of precursor on film formation. The compositional purity and the metal-oxide bond formation were tested for all the films. UV-Vis-NIR optical absorption in the 200-1500 nm range revealed an optical transmittance above 80% and the absorption edge at about 238 nm corresponding to an optical band gap E_g = 5.25 eV. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) micrographs of MgO films confirmed better crystallinity with larger grain size (0.85 μm) and reduced surface roughness (26 nm), respectively.     

Growth of (1 0 1¯ 3¯ ) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (1 0 1¯ 3¯) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (1 0 1¯ 3¯) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2×10⁵ cm⁻², revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44 eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement.     

The glass transition temperature and infrared absorption spectra of: (70−x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Glasses of the system: (70−x) TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by melt quench technique. Dependencies of their glass transition temperatures (T_g) and infrared (IR) absorption spectra on composition were investigated. It is found that the gradual replacement of oxides, TeO₂ by Li₂O, decreases the glass transition temperature and increases the fragility of the glasses. Also, IR spectra revealed broad weak and strong absorption bands in the investigated range of wave numbers from 4000 to 400 cm⁻¹. These bands were assigned to their corresponding bond modes of vibration with relation to the glass structure.     

GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

GaN epilayers are grown on (1 1 1) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial wurtzite GaN film is obtained. The surface morphology is smooth: the rms roughness is as low as 1.3 nm for 2×2 μm² scan. Photoluminescence measurements reveal pretty good optical properties. The GaN band edge is centred at 3.469 eV with a linewidth of 5 meV. These results demonstrate that GaN heteroepitaxially grown on diamond opens new rooms for high power electronic applications.     

RDF analysis, positron annihilation and Raman spectroscopy of xTiO2-(60 − x)SiO2-40Na2O non-linear optical glasses: III. Non-bridging oxygen bonds tracing and structure analysis

xTiO₂-(60 − x)SiO₂-40Na₂O glasses have proven an interesting linear and non-linear optical properties [M. Abdel-Baki, F. Abdel Wahab, F. El-Diasty, Mater. Chem. Phys. 96 (2006) 201]. The investigated glasses show one order of magnitude enhancement for the second-order index of refraction and third-order optical susceptibility over some TiO₂ silicate glasses. In this work, we continue studying these glasses using three different techniques to analyze the glass structures seeking to provide a deep insight for the relation between structure, compositions and the optical characteristics of these glasses. Radial Distribution Function analysis (RDF) combined Raman spectroscopy are used to study these glasses. Positron annihilation lifetime spectroscopy and Doppler broadening measurements are carried out to investigate the change in the glass structure as the incorporation of TiO₂ concentration into glass. The origin of the non-bridging oxygen (NBO) bonds has been traced to correlate their existence with the measured non-linear optical properties of the investigated glasses.     

Ionic conduction, diffusion and glass transition in 0.2[XNa2O · (1−X)Rb2O] · 0.8B2O3

We have investigated the ionic transport in the 0.2[XNa₂O · (1−X)Rb₂O] · 0.8B₂O₃ mixed-alkali system with X=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 in the glassy and the undercooled-liquid state by means of impedance spectroscopy and tracer diffusion experiments. The calorimetric glass-transition temperature T_g obtained by differential scanning calorimetry shows a minimum with composition. The composition dependence of the electrical conductivity below T_g exhibits a minimum, as well. These deviations from an ‘ideal’ linear mixing rule are usually denoted as mixed-alkali effect. The dc conductivities times temperature σ_dc×T follow the Arrhenius law in the range below and above T_g, respectively. The glass transition appears as a kink in the Arrhenius presentation of σ_dc×T. Below the glass-transition temperature the onset frequency ν_on of the conductivity dispersion has an Arrhenius-like temperature dependence. According to ‘Summerfield scaling’ the activation enthalpies of σ_dc×T and ν_on are expected to be the same. This is indeed observed but only for the single-alkali compositions. The activation enthalpies of σ_dc×T as a function of composition show a classical mixed-alkali maximum, however the activation enthalpies of the onset frequencies as a function of composition exhibit a nearly constant behavior in contrast to the expectation from Summerfield scaling. The tracer diffusion measurements reveal a major difference in diffusion of ⁸⁶Rb and ²²Na in mixed-alkali glasses. A diffusivity crossover of tracer diffusion coefficients of ²²Na and ⁸⁶Rb occurs near X=0.2. By comparison of tracer and conductivity diffusivities the Haven ratio is deduced which shows a maximum near the conductivity minimum composition.     

Local structural,magnetic, and optical properties of Zn1−xFexO thin films

High quality Zn_1−xFe_xO thin films were deposited on α-sapphire$\alpha \text{-sapphire}$ substrates by RF magnetron sputtering. X-ray absorption fine structure measurements showed that the chemical valence of Fe ions in the films was a mixture of 2+ and 3+ states, and Fe ions substituted mainly for the Zn sites in the films. DC-magnetization measurements revealed ferromagnetic properties from 5 to 300 K. The photoluminescence measurements at 15 K showed a sharp main transition peak at 3.35 eV along with a broad impurity peak at 2.45 eV. The structural and magnetization analyses of the Zn_1−xFe_xO films strongly suggested that the ferromagnetism was the intrinsic properties of the films.     

Synthesis and Judd-Ofelt analysis of a sol-gel material doped with a Ln2(Benzoate)6(Phen)2 (Ln = Er/Yb) complex

In this work, we have prepared a sol-gel derived hybrid material directly doped with Er_1.4Yb_0.6(Benzoate)₆(Phen)₂ (Phen = 1,10-phenanthroline) complex, which was reported with intramolecular Yb-Er energy-transfer process in our previous work. The infrared (IR) spectra of the pure complex and hybrid gel material were investigated. The NIR photoluminescence (PL) spectrum of hybrid gel material shows strong characteristic emission of Er³⁺ with broad full width at half-maximum (FWHM) of 70 nm. Judd-Ofelt theory was used in order to analyze the optical properties of Er³⁺ ions in the hybrid gel material.     

Degradation of nickel (86 MeV) ion irradiated polystyrene

Samples of polystyrene films were irradiated under vacuum at room temperature with ⁵⁸Ni⁷⁺ (86 MeV) ion with fluences ranging from 1 × 10¹¹ to 1 × 10¹³ ions cm⁻². Ion induced structural modifications were studied by means of atomic force microscopy atomic force microscopy (AFM), X-ray diffraction (XRD), UV-visible absorption spectroscopy (UV-Vis) and Fourier transform infrared spectroscopy (FTIR) techniques. Atomic force microscopy shows that the root mean square (RMS) roughness of the irradiated polystyrene surface increases with the increment of ion fluence. XRD analysis reveals that in addition to the increase of amorphization of polymer with the increase of ion fluence there is also an increase of ordering (to a small extent) in some of the micro-domains. These results have further been supported by the study of optical and chemical analysis. The analysis of present study shows that the increase of full width at half maximum (FWHM) of first peak of XRD spectra, decrease of optical band gap and the formation of new alkyne group may be attributed to the increase of amorphization of polystyrene. Similarly, sharpening of second X-ray diffraction peak, decrease of Urbach’s energy and increase in the absorbance ratio of I₁₂₂₂/I₁₁₈₃ may be owed to the increase of ordering in some domains.     

Optical properties of Cr ion in lithium metasilicate Li2O · SiO2 transparent glass-ceramics

The optical properties of Cr³⁺ ions in lithium metasilicate (Li₂O · SiO₂) transparent glass-ceramics were investigated. The main crystalline phase precipitated was the lithium metasilicate (Li₂O · SiO₂) crystal. The percent crystallinity and crystalline size were ranging 65-75% and 20-35 nm, respectively. The color changes drastically to deep pink from emerald green upon crystallization. New and strong absorption bands appeared and the absorption intensity increases by about 10 times that in glass. These new absorption bands are found to be derived from Cr³⁺ ions in octahedral sites in the lithium metasilicate crystal lattice. Cr³⁺ ions substitute for three Li⁺ ions and occupy the distorted octahedral site between single [SiO₄]_n chains of lithium metasilicate crystal. The ligand field parameters can be estimated: 10Dq = 13 088 cm⁻¹, B = 453 cm⁻¹, Dq/B = 2.89 and C = 2036 cm⁻¹. The near-infrared luminescence centered at 1250 nm was not detected in the deep pink glass-ceramics unlike emerald green glass.