Reactivity and oxygen diffusion property of resistive barriers for Bi-2223/Ag tapes

Reactivity of several oxide materials (OM) with BSCCO powder and oxygen diffusion through OM layer has been tested at temperature ≈840 °C in air. The OM (e.g.: BaZrO₃, SrCO₃, MgO and ZrO₂) showing the low or no reactivity with BSCCO have been mixed (10 wt.%) with precursor powder and used for single-core tapes. Bi-2223/Ag/OM/Ag single-core tapes with oxide barriers made of BaZrO₃, SrCO₃, ZrO₂ and Al₂O₃ have been also prepared by a standard powder-in-tube technique. The used OM in the direct contact with BSCCO influences the electrical properties of Bi-2223 phase differently. These is because the oxides react with BSCCO during the heat treatment and simultaneously affect the 2212→2223 phase transformation, the Bi-2223 grain growth and so also grain connectivity. SrCO₃ powder has been evaluated as the best material from the point of no destructive effect on 2223 phase transport current property. The oxide barrier controls the oxygen diffusion during the tape heat treatment and simultaneously the HTS phase formation kinetics, its purity and content within the superconducting core. For single-core Bi-2223/Ag/OM/Ag tapes, the highest current density was measured for Al₂O₃ due to only slightly reduced oxygen diffusion through the barrier.     

Superconducting joint of Bi-2223/Ag superconducting tapes by diffusion bonding

61-Filaments Bi-2223/Ag superconducting tapes have been joined by diffusion bonding. The critical currents (I_Cs) of the joints are obtained by using standard four probe method under no magnetic field in the liquid nitrogen. The microstructures of the joints are evaluated by the electron microscope in electron backscatter diffraction mode and the phase compositions of the superconducting cores of the joint and the original tape are determined by X-ray diffraction (XRD). The results show diffusion bonding is effective bonding technique for HTS tapes, and the bonding time is reduced greatly from hundreds of hours to a few hours, and the bonding pressure also changes from 140–4000 MPa to 3 MPa. Furthermore, the diffusion bonding joints sustain superconducting properties, and the critical current ratios (CCR_O) of the joints are in the range of 35%–80%. Microstructures of the typical joint display a good bonding and some defects existed in traditional method are avoided. XRD results show that the phase compositions of the superconducting cores have no obvious changes before and after diffusion bonding, which offers physical and material bases for high superconducting property of the joints.     

EDXRF measurements on gold diffusion-doped Bi1.8Pb0.35Sr1.9Ca2.1Cu3Oy

Gold (Au) diffusion in superconducting Bi_1.8Pb_0.35Sr_1.9Ca_2.1Cu₃O_y was investigated over the temperature range 500-800 °C by the energy dispersive X-ray fluorescence (EDXRF) technique. It is found that the Au diffusion coefficient decreases as the diffusion-annealing temperature decreases. The temperature dependences of Au diffusion coefficient in grains and over grain boundaries are described by the relations D₁=6.7×10⁻⁵exp(−1.19 eV/k_BT) and D₂=9.7×10⁻⁴exp(−1.09 eV/k_BT), respectively. The diffusion doping of Bi-2223 by Au causes a significant increase of the lattice parameter c by about 0.19%. For the Au-diffused samples, dc electrical resistivity and transport critical current density measurements indicated the critical transition temperature increased from 100 to 104 K and the critical current density increased from 40 to 125 A cm⁻², in comparison with those of undoped samples. From scanning electron microscope (SEM) and X-ray diffraction (XRD) measurements it is observed that Au doping of the sample also improved the surface morphology and increased the ratio of the high-T_c phase to the low-T_c phase. The possible reasons for the observed improvement in microstructure and superconducting properties of the samples due to Au diffusion are also discussed.     

Bi-2223/AgAu 带材及应用进展

Bi-2223/AgAu 高温超导带材因为较低的热导率和较高的载流性能, 被认为是制备高温超导电流引线的最佳材料之一. 这篇文章简单介绍了高温超导电流引线的工作特点和不同包套 Bi-2223 带材的热导率, 在此基础上详细介绍了目前 Bi-2223/AgAu 带材和高温超导电流引线国内外研究进展, 最后展望了 Bi-2223 带材的发展趋势.     

Influence of Precursor Powder Fabrication Methods on the Superconducting Properties of Bi-2223 Tapes

Bi-2223 precursor powders are prepared by both oxalate co-precipitation(CP) and spray pyrolysis(SP) methods.The influence of fabrication methods on the superconducting properties of Bi-2223 tapes are systematically studied. Compared to the CP method, SP powder exhibits spherical particle before calcination and smaller particle size after calcinations with more uniform chemical composition, which leads to a lower reaction temperature during calcination process for Bi-2223 tapes. Meanwhile, the non-superconducting phases in SP powder are more uniformly distributed with smaller particle sizes. These features result in finer homogeneity of critical current in large-length of Bi-2223 tape, higher density of filaments and better texture after heat treatment. Therefore,the SP method could be considered as a better route to prepare precursor powder for large-length Bi-2223 tape fabrication.     

Fabrication of joint Bi-2223/Ag superconducting tapes with BSCCO superconducting powders by diffusion bonding

61-Filaments Bi-2223/Ag superconducting tapes have been successfully joined with BSCCO superconducting powder interlayer by diffusion bonding. The electrical properties of the diffusion bonding joints were tested by standard four probe method and the microstructures of the joints were also examined by SEM. Additionally, the phase constituents of the superconducting powders between the tapes before and after bonding process were evaluated by XRD analysis. The result shows that the diffusion bonding joints are superconductive. The microstructures of the joint display a good bonding with no cracks and discontinuities. The joining zones are mainly composed of Bi-2223 phase, Bi-2212 phase and a small amount of CuO, Ca₂PbO₄. At last, the phase transformations of the superconducting powders in the bonding process are discussed.     

Annealing time effect on Bi-2223 phase development in LFZ and EALFZ grown superconducting fibres

The application of an electrical current during solidification by laser floating zone (LFZ) technique of superconducting fibres of the Bi-Sr-Ca-Cu-O system was recently proposed as a very suitable method to improve crystal alignment. This novel electrical assisted laser floating zone (EALFZ) technique also leads to a strong modification on the phase nature. In the present study, the effect of the annealing time at 860 °C on superconducting properties of Bi₂Sr₂Ca₂Cu₄O₁₁ nominal composition fibres was investigated. Two sets of samples, grown by LFZ and EALFZ using an electric current of 150 mA, were annealed at three different times (24, 96 and 192 h). The critical current density values revealed to be strongly dependent on the 2223 phase amount and on crystal orientation. Current application during the solidification process favours the early development of the 2223 phase, while long annealing times are required in the conventional LFZ processed fibre. The highest critical current density was achieved for the EALFZ fibres annealed during 192 h due to the 2223 stoichiometry optimization and decreasing of second phases.     

Investigation of Bi-2223 high temperature superconducting tape as the material for gradient coil in MRI

The use of Bi-2223 high temperature superconducting (HTS) tape as a material for gradient coils in MRI is evaluated in this paper. Bi-2223 tapes have a very high critical current and a very low power loss. A HTS tape gradient coil is expected to provide much higher gradient strength and generate much lower heating than a copper coil. Measurements of the AC power loss of Bi-2223 tapes at typical operating frequencies for gradient coils are presented. The degradation of the critical current and its effect on the increase of AC power loss is analyzed. Practical technical issues such as resistance, gradient strength and mechanical performance are also discussed. A prototype Bi-2223 HTS tape gradient coil is evaluated to verify the concept.     

Investigation of Ni/Ta contacts on 4H silicon carbide upon thermal annealing

Nickel and Tantalum thin films with 3:5 thickness ratios were deposited in succession onto 4H-SiC substrate at room temperature. The samples were then heated in situ in vacuum at 650, 800 or 950 °C for 30 min. Glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the interfacial reactions and electrical properties. Amorphous Ni-Ta can be formed by solid-state reaction at 650 °C. The minor dissolved Ni in the Ta metal promotes the reaction between Ta and SiC. With increasing annealing temperature up to 950 °C, the dominant carbide changes from Ta₂C to TaC and a layer structure is developed. Electrical measurements show that ohmic contact is formed after annealing at or above 800 °C.     

The preparation of c-axis epitaxial Bi-2212 films on STO(1 0 0) by sol-gel method

Bi₂Sr₂Ca₁Cu₂O_8+δ (Bi-2212) films were grown on (1 0 0) oriented SrTiO₃ (STO) substrate using sol-gel spin-coating method. The effects of heat treatment conditions and coating times on the phase formation and surface morphology were investigated using thermal analysis, optical microscope, X-ray diffraction, and scanning electronic microscopy. Mixed phases were formed from 820 to 840 °C, and Bi-2212 single phase was obtained at 830 °C for 3 h. c-axis epitaxial films with smooth surfaces were obtained by drying at 600 °C and coating for 5 times.     

The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Thin film of non-polymeric organic compound pyronine-B has been fabricated on moderately doped (MD) n-InP substrate as an interfacial layer using spin coating technique for the electronic modification of Au/MD n-InP Schottky contact. The electrical characteristics have been determined at room temperature. The barrier height and the ideality factor values for Au/pyronine-B/MD n-InP Schottky diode have been obtained from the forward bias I-V characteristics at room temperature as 0.60 eV and 1.041; 0.571 and 1.253 eV after annealing at 100 and 250 °C, respectively. An increase in annealing temperature at the Au/n-InP Schottky junction is shown to increase the reverse bias leakage current by about one order of magnitude and decrease the Schottky barrier height by 0.027 eV. Furthermore, the barrier height values for the Au/pyronine-B/MD n-InP Schottky diode have also been obtained from the C-V characteristics at room temperature as 1.001 and 0.709 eV after annealing at 100 and 250 °C, respectively. Finally, it was seen that the diode parameters changed with increase in the annealing temperature.     

Addition of nanometer SiC in the silver-sheathed Bi2223 superconducting tapes

Nanometer SiC particles were added to (Bi,Pb)₂Sr₂Ca₂Cu₃O_x (Bi2223) precursor powders and the powders were transformed into silver-sheathed superconducting tapes by the standard powder-in-tube (PIT) technique. The influence of SiC on the melting temperature, high-T_c (Bi2223) phase formation, microstructure and transport property of the tapes was studied by means of DTA, XRD, SEM/EDX, electrical and magnetic measurements. The results showed that SiC addition lowered the melting temperature of the superconductor powders and consequently, decreased the optimum sintering temperature of the tapes. However, the addition did not affect the Bi2223 phase formation and critical temperature (T_c) of the tapes up to 1.00 wt.% of SiC. Most importantly, the addition of a small amount of SiC (0.15 wt.%) improved the critical current (I_c) and I_c behavior in magnetic field as a result of the enhancement in density, grain alignment, grain connectivity and flux pinning of the tapes.     

Bi-2223复合导体直流磁场下自场损耗热稳定性分析

对于一种Bi-2223的复合导体,利用ANSYS软件,我们分析了在直流磁场下励磁过程中,自场损耗对复合导体热稳定性的影响;然后假定Bi-2223超导带内不同的损耗值,通过计算,确定了达到超导带分流温度的最小损耗值。     

The important role of Mn in the room-temperature ferromagnetism of Mn-doped GaN films

Mn-doped GaN films (Ga_1−xMn_xN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga_1−xMn_xN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn³⁺ due to the thermal treatment. Mn³⁺, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn³⁺ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn³⁺ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase Mn_xGa_y formation.     

Effects of processing on the electrical and structural properties of spray deposited CdS:In thin films

Polycrystalline CdS:In thin films were prepared by the Spray pyrolysis technique (SP) at a substrate temperature T_s=490 °C. The effects of annealing in nitrogen atmosphere at 400 °C and HCl-etching on the electrical and structural properties of the films were investigated. The electrical properties were studied through the analysis of the I-V curves, while the structural properties were studied through the analysis of the X-ray diffraction (XRD) patterns and the scanning electron microscope (SEM) images. An increase in the films’ resistivity was occurred after annealing and/or HCl-etching, which was accompanied by changes in the XRD patterns and SEM images. These changes were related to a phase change from the mixed (cubic and hexagonal) phase to the hexagonal phase which was expected to occur during the aforementioned processes. The X-ray diffraction (XRD) patterns and the scanning electron microscope images confirm this expectation.     

On the superconductivity in in situ synthesized MgB2 tapes

Single core stainless steel (SS) sheathed MgB₂ tapes have been made by the powder-in-tube (PIT) method using commercial Mg and B powders in two series, one with nominal composition and the other with excess Mg. The electrical resistivity and susceptibility measurements have been carried out to evaluate residual resistivity ratio (RRR), the coherence length ξ(0) and critical current density J_C(T) in these tapes. Detailed structural analysis of the core material has been carried out to correlate the superconducting properties with the crystallinity. In the optimized growth condition the MgB₂ tapes exhibited an estimated J_C of ∼1.4×10⁷ A/m² at 39.45 K in zero field and the zero temperature coherence length is found to be ∼68 Å. MgB₂ tapes fabricated from starting powders having nominal Mg-composition have been shown to exhibit higher J_C than those fabricated from excess magnesium composition of the starting powders. The strained lattice together with the presence of nanosized MgO inclusion having size smaller than the coherence length, are shown to be responsible for the observed higher J_C.     

Magnetic properties of Nd–Fe–B film magnets prepared by RF sputtering

Highly oriented films of ∼6 μm in thickness consisting of the Nd₂Fe₁₄B compound phase were obtained by a three-dimensional sputtering method at room temperature and the subsequent crystallization by annealing. The c-axis orientation and coercivity of film samples were sensitive to the sputtering parameters and annealing conditions. The optimum temperature and time for annealing were 650 °C and 30 min to show the highest coercivity without any deterioration for the orientation of Nd₂Fe₁₄B grains, and furthermore the degree of c-axis orientation was increased by decreasing the Ar gas pressure or input power for sputtering. The resultant film magnets with good magnetic properties of B_r=∼1.06 T, H_C=∼371 kA/m, and (BH)_max=∼160 kJ/m³ were obtained under the optimized parameters for sputtering.     

Investigation of in-plane orientation characteristics for Bi-2212/MgO thin films fabricated by the MOD method

We investigated the characteristics of in-plane orientation for c-axis-oriented Bi-2212 thin films on MgO substrates, fabricated by the metal–organic decomposition (MOD) method. Bi-2212/MgO films were annealed using a 2-step heat treatment. The dominant rotation angle of the Bi-2212 film was 45° ([1 0 0] of Bi-2212 // [1 1 0] of MgO) for a precursor film fabricated at 500 °C and fired at 840 °C for 0 min or 30 min. However, after firing for 1 h the ?-scanning signal indicating the 45° angle became smaller and the signal representing an angle of about ±12° ([1 0 0] of Bi-2212 // [5 1 0] of MgO) became larger. After firing for 3 h, this ±12° signal became dominant. The extent of the 45° angle’s shift to ±12° increased with increasing firing time. On the other hand, when the precursor film was fabricated at 430 °C, signals indicating angles of 0°, ∼±12°, and 45° were observed after firing for 30 min. The rotation angle depended on the precursor-fabrication temperature when the precursor film was fired at 840 °C for 0 min or 30 min.     

CuO-PAA hybrid films: Chemical synthesis and supercapacitor behavior

We report the synthesis of CuO-Poly (acrylic) acid (PAA) hybrid thin films by a cost-effective spin coating technique for supercapacitor application. Coated films were annealed at 300, 400 and 500 °C, to study the annealing effect on the supercapacitor behavior. Further films were characterized by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), Fourier transform-Raman spectroscopy (FT-Raman) and Fourier transform-Infrared spectroscopy (FT-IR) techniques. Energy dispersive spectroscopy (EDS) shows the formation of amorphous blend of CuO and Cu₂O phases at 300 °C. Further, films annealed at 400 and 500 °C exhibit polycrystalline phase pure CuO with monoclinic structure. The scanning electron microscopy (SEM) micrographs show the transition of island-like structure to CuO crystals surrounded by PAA grafted composite ring with increase in annealing temperature. The possible growth mechanism of PAA and CuO bonding is discussed. Cyclic voltammetry (CV) is employed to calculate the specific capacitance (C_sp) in 1 M H₂SO₄ electrolyte. It is observed that the C_sp increases from 41 to136 F g⁻¹ with increase in annealing temperature.     

Optoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures

The optoelectronic characteristics of Ni/Au Schottky photodiodes based on Al_0.35Ga_0.65N were investigated. The transmission of the Ni (50 Å)/Au (50 Å) layer was determined by evaporating it on a quartz substrate. As evaporated, the transmission coefficient in the 200–350 nm wavelength range was found to be 43 to 48%. Annealing at temperatures of up to 400 °C did not influence the transmission coefficient. After annealing at 500 °C, the transmission coefficient increased from 50 to 68% over the 200–350 nm range. The reverse bias current was optimised in terms of annealing temperature and was found to be as low as 1.94×10⁻¹³ A after annealing at 400 °C for a 0.6 mm diameter contact. The Schottky barrier heights increased with annealing temperature reaching as high as 1.46 and 1.89 eV for I–V and C–V measurements, respectively. The quantum efficiency was measured to be 20.5% and the responsivity reached its peak of 0.046 A/W at 275 nm. The cut-off wavelength was 292 nm.