N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.     

Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition

A fabrication process for growth of GaN lateral polarity junctions consisting of Ga-polar and N-polar domains grown simultaneously side-by-side on c-plane sapphire was developed using the polarity control scheme. An ammonia-annealing step following deposition and patterning of a thin low-temperature AlN nucleation layer played a crucial role in avoiding mixed-polarity growth of the remaining AlN nucleation layer, as well as in nitriding the bare sapphire surface to facilitate growth of N-polar GaN. The achievement of both polar domains, free from inversion domains within a contiguous domain, led to Ga-polar domain exhibiting featureless morphology with highly resistive characteristics, while N-polar domains exhibited hexagonally faceted morphology and were highly conductive.     

Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition

This paper reports a study of the effect of NH₃ flow rate on m-plane GaN growth on m-plane SiC with an AlN buffer layer. It is found that a reduced NH₃ flow rate during m-plane GaN growth can greatly improve the recovery of in situ optical reflectance and the surface morphology, and narrow down the on-axis (1 0 1¯ 0) X-ray rocking curve (XRC) measured along the in-plane a-axis. The surface striation along the in-plane a-axis, a result of GaN island coalescence along the in-plane c-axis, strongly depends on the NH₃ flow rate, an observation consistent with our recent study of kinetic Wulff plots. The pronounced broadening of the (1 0 1¯ 0) XRC measured along the c-axis is attributed to the limited lateral coherence length of GaN domains along the c-axis, due to the presence of a high density of basal-plane stacking faults, most of which are formed at the GaN/AlN interface, according to transmission electron microscopy.     

Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition

Cuprous oxide (Cu₂O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C₅HF₆O₂)₂] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu₂O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)_Cu2O(0 0 0 2)_ZnO; [0 0 1]_Cu2O[1 2¯ 1 0]_ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p–n junction solar cells or diodes.     

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Various techniques for morphological evolution of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition have been evaluated. Atomic force microscopy, photoluminescence (PL) and X-ray diffraction measurements have been used for characterization. It is shown that inclusions, that are generated into the V-defects in the InGaN quantum wells (QW), can be removed by introducing a small amount of hydrogen during the growth of GaN barriers. This hydrogen treatment results in partial loss of indium from the QWs, but smooth surface morphology of the MQW structure and improved optical quality of InGaN wells are obtained. The density of the V-defects could be reduced by reducing the dislocation density of the underlying GaN buffer.     

Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition

Non-polar a-plane GaN thin films were grown on r-plane sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 Å. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer.     

Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition

We have investigated photoluminescence (PL) and electron Hall mobility for unintentionally doped GaN epitaxial layers grown by low-pressure metalorganic chemical vapor deposition on c-plane Al₂O₃ substrates. Four GaN films having identical dislocation density but remarkably different electron Hall mobility were exploited. At low temperature (12 K), a PL line associated with a bound exciton was observed and strong correlations were found between the Hall mobility and the PL intensity of the exciton transition. That is, relative PL intensity of the bound exciton to a donor-bound exciton monotonously increased with decreasing the electron mobility of the GaN films. This correlation was interpreted in terms of electrical compensation. Efforts to find the chemical origin of the PL line led to the conclusion that the BE line originated neither from threading dislocations nor from extrinsic point defects. Intrinsic acceptors such as Ga vacancy and GaN anti-site were suspected as plausible origin.     

Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires

A combination of experimental and computational fluid dynamics-based reactor modeling studies were utilized to study the effects of process conditions on GaN nanowire growth by metalorganic chemical vapor deposition (MOCVD) in an isothermal tube reactor. The GaN nanowires were synthesized on (0 0 0 1) sapphire substrates using nickel thin films as a catalyst. GaN nanowire growth was observed over a furnace temperature range of 800–900 °C at V/III ratios ranging from 33 to 67 and was found to be strongly dependent on the position of the substrate relative to the group III inlet tube. The modeling studies revealed that nanowire growth consistently occurred in a region in the reactor where the GaN thin-film deposition rate was reduced and the gas phase consisted primarily of intermediate species produced by the reaction and decomposition of trimethylgallium–ammonia adduct compounds. The GaN nanowires exhibited a predominant [1 1 2¯ 0] growth direction. Photoluminescence measurements revealed an increase in the GaN near-band edge emission intensity and a reduction in the deep-level yellow luminescence with increasing growth temperature and V/III ratio.     

Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

We have investigated the unintentional impurities, oxygen and carbon, in GaN films grown on c-plane, r-plane as well as m-plane sapphire by metal-organic chemical vapor deposition. The GaN layer was analyzed by secondary ion mass spectroscopy. The different trend of the incorporation of oxygen and carbon has been explained in the polar (0 0 0 1), nonpolar (1 1 2¯ 0) and semipolar (1 1 2¯ 2) GaN by a combination of the atom bonding structure and the origin direction of the impurities. Furthermore, it has been found that there is a stronger yellow luminescence (YL) in GaN with higher concentration of carbon, suggesting that C-involved defects are originally responsible for the YL.     

Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

The nanocrystalline alpha silicon nitride (α-Si₃N₄) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH₄ and NH₃. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si₃N₄ nanoparticles increased, but the deposition rate decreased.     

Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition

This study examined the influence of strain-compensated triple AlGaN/GaN/InGaN superlattice structures (SLs) in n-GaN on the structural, electrical and optical characteristics of LEDs by analyzing the etch pits density (EPD), stress measurement, high-resolution X-ray diffraction (HRXRD), sheet resistance, photoluminescence (PL) and light–current–voltage (L–I–V). EPD, stress measurement and HRXRD studies showed that the insertion of AlGaN/GaN/InGaN SLs during the growth of n-GaN effectively distributed and compensated for the strong compressive stress, and decreased the dislocation density in n-GaN. The operating voltage at 20 mA for the LEDs grown with SLs decreased to 3.18 V from 3.4 V for the LEDs grown without SLs. In addition, a decrease in the spectral blue shift compared to the LEDs grown without SLs was observed in the LEDs grown with the SLs.     

Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition

Tungsten trioxide (WO₃) nanobelts in tetragonal structure were grown on Si substrates by a hot-wall chemical vapor deposition (CVD) method without using catalysts. The products were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL) spectrum. The width of the nanobelts is in the range of 50–100 nm with width-to-thickness ratios of 5–10 and lengths of up to tens of micrometers. These nanobelts grew along the [0 0 1] direction and can be identified as the tetragonal WO₃ structures. Raman and PL measurements indicate the high quality of the nanobelts. The vapor–solid growth mechanism could be applicable in our experiment.     

Si/SiGe growth by low-energy plasma-enhanced chemical vapor deposition

Nowadays, microelectronic industry targets (in term of down-scaling and throughput) require some severe reduction of the SiGe epitaxial growth temperature or/and increase of the growth rate. A possible alternative to meet these requirements is low-energy plasma-enhanced chemical vapor deposition (LEPECVD). We have studied the deposition kinetics of silicon, silicon–germanium and germanium using LEPECVD. This new deposition technique offers promising advantages compared to thermally activated CVD such as low deposition temperature and high growth rate. Different regimes are observed depending on the growth temperature. High temperatures can be associated to a mix between thermally and plasma-activated deposition, whereas only plasma-assisted deposition occurs at low temperatures. Crystalline quality of the layers was checked through the mean of photoluminescence, which revealed no defects. A high growth rate (100 nm min⁻¹) that can be achieved very easily with LEPECVD allows to grow quickly very thick layers. We have used this technique to grow step-graded thick SiGe layers which are almost fully relaxed. Those virtual substrates exhibited the well-known cross-hatch pattern, with RMS roughness from 2 to 10 nm for pure Ge layers.     

Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition

A series of ZnO films were grown on GaAs(0 0 1) substrates at different growth temperatures in the range 250–720°C by metalorganic chemical vapor depostion. Field emission scanning electron microscopy was utilized to investigate the surface morphology of ZnO films. The crystallinity of ZnO films was investigated by the double-crystal X-ray diffractometry. The optical and electrical properties of ZnO films were also investigated using room-temperature photoluminescence and Hall measurements. Arrhenius plots of the growth rate versus reciprocal temperature revealed the kinetically limited growth behavior depending on the growth temperature. It was found that the surface morphology, structural, optical and electrical properties of the films were improved with increasing growth temperature to 650°C. All the properties of the film grown at 720°C were degraded due to the decomposition of ZnO film.     

Epitaxial growth of α-SiC layers by chemical vapor deposition technique

Single crystals of α-SiC were grown on α-SiC substrates at a temperature between 1570 and 1630°C with the standard gas flow rate: H₂ ～ 1 liter/min, SiCl₄ ～ 1.7 ml/min and C₃H₈ ～ 0.1 ml/min. The grown layers were transparent greenish-blue, and surfaces were mirror-like. By an X-ray back-reflection Laue pattern and a reflection electron diffraction method, the grown layer was identified as 6H-SiC, one polytype of α-SiC. Crystal growth was influenced by substrate temperature, flow rates of reaction gases and the surface polarity of the substrate. The growth rate decreased with increase of the substrate temperature in the above temperature region. A lamellar structure was observed on the (0001) Si surface and a mosaic structure was observed on the (000$\text{1}$)C surface. The mole ratios of both SiCl₄ and C₃H₈ to H₂ and that of Si to C had some influence on crystal growth. Undoped layers were n-type due to nitrogen. P-type SiC was grown by doping Al during crystal growth. Doping effects were studied by photoluminescence and electrical measurements.     

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

Production and measurement of active nitrogen atoms (N+N*), which consist of ground state nitrogen atoms N and excited state nitrogen atoms N*, in an inductively coupled radio frequency discharge for the growth of group III nitrides and their alloys using a molecular beam epitaxy (MBE) were studied. Two discharge modes of the low brightness (LB) and the high brightness (HB) used in this study to produce excited nitrogen molecules (N₂*) and dissociated active nitrogen atoms (N+N*). The flux of (N+N*) was measured by a Langumuir-like electrode due to the self-ionization of adsorbed (N+N*) on a negatively biased electrode. The self-ionization, which emits electrons from (N+N*), forms an atom current and is confirmed using different electrodes such as Pt and CuBe and different electrode area. The atom current was calibrated by the grown GaN thickness in a VG80H MBE machine. The calibrated flux of (N+N*) per atom current in the VG80H machine is 5.5×10⁻⁴ ML/s/nA, where ML is monolayer. The atom current is useful to monitor the flux of chemically active nitrogen atoms N+N* for growth of group III nitrides and their alloys. Activity modulation migration enhanced epitaxial growth (AM-MEE) was demonstrated as an application of the measurement of atom current for the growth of the group III nitrides.     

Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD)

Epitaxial, graphitic carbon thin films were directly grown on C-face/(0 0 0 1¯) SiC and (0 0 0 1) sapphire by chemical vapor deposition (CVD), using propane as a carbon source and without any catalytic metal on the substrate surface. Raman spectroscopy shows the signature of multilayer graphene/graphite growth on both the SiC and sapphire. Raman 2D-peaks have Lorentzian lineshapes with FWHM of ∼60 cm⁻¹ and the ratio of the D-peak to G-peak intensity (I_D/I_G) linearly decreases (down to 0.06) as growth temperature is increased. The epitaxial relationship between film and substrates were determined by X-ray diffraction. On both substrates, graphitic layers are oriented parallel to the substrate, but exhibit significant rotational disorder about the surface normal, and predominantly rhombohedral stacking. Film thicknesses were determined to be a function of growth time, growth temperature, and propane flow rate.     

Impact of chlorine dissociation for modified chemical vapor deposition

Modified chemical vapor deposition (MCVD) is the platform technology used to create a wide range of silica-based optical fibers. This paper reports on the extension of the reaction scheme embedded within a computational fluid dynamics model of the MCVD process to include chlorine dissociation and recombination. Simulations employing this modified kinetic scheme indicate that chlorine dissociation acts primarily as a ‘heat sink’ in cases where the operating conditions promote a high peak temperature in the narrow reaction zone where most of the SiCl₄ oxidation occurs. The extended model allows a wider range of operating parameters to be examined in terms of the deposition profile of silica ‘soot’ particles on the substrate tube wall.     

Study of microstructural evolutions in phosphorus-doped ZnO films grown by pulsed laser deposition

The microstructure of P-doped ZnO films grown on the c-plane sapphire substrate by pulsed laser deposition (PLD) was investigated. ZnO films were highly textured along c-axis with two different in-plane orientations. The textured domain was surrounded by the threading dislocations, resulting in the formation of low-angle grain boundary. It was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. For the microstrain study, X-ray diffraction line profile analysis (LPA) was performed. The 0.5 at% P-doped ZnO film showed much higher microstrain than the 1.0 at% P-doped ZnO film as well as as-grown film, which indicated that the phosphorus in former film was effectively incorporated into ZnO film. X-ray photoelectron spectroscopy (XPS) results showed that the phosphorus in 1.0 at% P-doped ZnO film tended towards segregation, which was well consistent with XRD results.