Study of microstructural evolutions in phosphorus-doped ZnO films grown by pulsed laser deposition

The microstructure of P-doped ZnO films grown on the c-plane sapphire substrate by pulsed laser deposition (PLD) was investigated. ZnO films were highly textured along c-axis with two different in-plane orientations. The textured domain was surrounded by the threading dislocations, resulting in the formation of low-angle grain boundary. It was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. For the microstrain study, X-ray diffraction line profile analysis (LPA) was performed. The 0.5 at% P-doped ZnO film showed much higher microstrain than the 1.0 at% P-doped ZnO film as well as as-grown film, which indicated that the phosphorus in former film was effectively incorporated into ZnO film. X-ray photoelectron spectroscopy (XPS) results showed that the phosphorus in 1.0 at% P-doped ZnO film tended towards segregation, which was well consistent with XRD results.     

Investigation on the crystal growth process of spherical Si single crystals by melting

Spherical Si single crystals with a diameter of approximately 1 mm were grown by melting for solar cell applications. The start sources were spherical Si multicrystals fabricated by a dropping method, which had various irregular shapes. Spherical Si multicrystals were melted into droplets and recrystallized on a quartz plate sample holder that was coated with Si₃N₄. It was found that a surface coating of SiO₂ layer on the start sources and oxygen atmosphere during melting and recrystallization were essential to achieve almost perfect spherical shape. Defect-free single crystalline spherical Si could be obtained at recrystallization temperature ranging from 1400 to 1330 °C, corresponding to an undercooling ranging from 14 to 84 °C, with a yield of nearly 100%. At recrystallization temperatures higher than 1380 °C, the recrystallized spherical Si crystals were almost perfect spheres, whereas small protuberances were formed when the recrystallization temperature was lower than 1360 °C. It was also found that that melting at a temperature close to the melting point of Si (at ~1414 °C), a slow cooling rate of ~1 °C/min before recrystallization and relatively fast cooling rate of ~20 °C/min after recrystallization were important for achieving high carrier lifetime. The average carrier lifetime was greatly improved from lower than 2.5 μs of start sources up to ~7.5 μs by melting at optimized conditions. The influences of residual oxygen on the carrier lifetime of recrystallized spherical Si are discussed based on the measurement results with Fourier transform infrared spectrometer.     

Characterization and synthesis of Y0.9Ca0.1Ba1.8Sr0.2Cu3O7−δ via combining sol-gel and solid-state route

We applied the conventional sol-gel and solid-state reactions in this study to prepare double-substituted superconducting Y_0.9Ca_0.1Ba_1.8Sr_0.2Cu₃O_7−δ. The result and the effect of calcium and strontium doping on high-T_c compound Y-123 have been investigated. The precursor gel Ca-Ba-Sr-Cu-O was prepared by acetate-tartrate sol-gel route which involved hydrolysis and olation (polycondensation). Y_0.9Ca_0.1Ba_1.8Sr_0.2Cu₃O_7−δ was obtained by solid-state reaction between Y₂O₃ and Ca-Ba-Sr-Cu-O heated at 880 °C for 18 h with step cooling 50 °C/h until 450 °C. Without oxygen flow during the whole annealing process, the sample still showed good superconducting properties with T_c-zero close to 80 K. The presence of organic material in the sol-gel precursor Ca-Ba-Sr-Cu-O is nucleophile species, which is chemically reactive to Y₂O₃ during solid-state reaction thus enhance the diffusion rate. Moreover, -OH group in the precursor gel has ability to provide a sufficient amount of oxygen for the sample to stabilized the multicomponent superconductor.     

Vertically aligned N-doped carbon nanotubes by spray pyrolysis of turpentine oil and pyridine derivative with dissolved ferrocene

Vertically aligned nitrogen-doped carbon nanotubes were synthesized from the pyrolysis of a mixture of turpentine oil, 4-tert-butylpyridine (C₉H₁₃N) and ferrocene on silicon and quartz substrate in nitrogen atmosphere at 700 °C by simple spray pyrolysis technique. SEM, TEM, TGA/DTA, Raman spectroscopy, XPS and electron probe micro analysis (EPMA) techniques were used to characterize the structural analysis and composition of the as-grown N-doped carbon nanotubes. Morphology of the films was greatly affected by the nature of the substrate. From the XPS and EPMA data, it was found that nitrogen content of the nanotubes were 1.6 at.% and 2 at.% on silicon and quartz substrate, respectively. Our studies show that two different types of N atoms can be present in these materials. These are ‘pyridinic’ and ‘graphitic’ nitrogen with binding energies of 398.2 eV and 400.4 eV, respectively. Raman spectroscopy reveals that graphitization of carbon nanotubes grown on silicon is better than nanotubes grown on quartz substrate. Thermogravimetric analysis showed that the thermal stability of as-prepared nanotubes grown on silicon substrate is higher than the nanotubes deposited on quartz substrate.     

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E₂ (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.     

Isothermal crystallization kinetic of ZnO thin films

Zinc oxide (ZnO) thin films deposited by DC magnetron sputtering were annealed in nitrogen atmosphere at different temperatures ranging from 100 to 500 °C with a step of 100 °C; the annealing time was 6 h. In order to study the film’s crystallization kinetic, their structures were monitored by means of X-ray diffraction (XRD) analysis each hour. Variation in grain size, calculated from the XRD patterns, with annealing time and temperature, obeys the classical parabolic law of grain growth. Exponent n was found to be dependent on the annealing temperature; it ranged from 5.13 to 3.8 with increase in annealing temperature. From the obtained exponent n values we inferred that the grain growth mechanism is mainly governed by the atom jumping across the grain boundary. We have found that the grain growth is characterized by a low activation energy ranging from 22 to 24 kJ/mol.     

Annihilation of E′ center defects in silica glass by hydrogen treatment

It was found, using electron paramagnetic resonance (EPR), that the signal of E′ centers in silica glass totally disappeared following a 1 h heat-treatment at 1000 °C under hydrogen atmosphere. However, by subsequent heat-treatment at the same temperature under a dry nitrogen atmosphere, some of the E′ centers re-appeared.     

MOVPE growth of single-crystal hexagonal AlN on cubic diamond

We have obtained single-crystal aluminum nitride (AlN) layers on diamond (1 1 1) substrates by metalorganic vapor-phase epitaxy (MOVPE). When the thermal cleaning temperature of the substrate and growth temperature of the AlN layer were below 1100 °C, the AlN layer had multi-domain structures mainly consisting of rotated domains. An interface layer, consisting of amorphous carbon and poly-crystal AlN, was formed between the AlN layer and the diamond substrate. On the other hand, when the thermal cleaning temperature and growth temperature were above 1200 °C, a single-crystal AlN layer was grown and no interface layer was formed. Therefore, we attribute the multi-domain structures to the interface layer. Even at the growth temperature of 1100 °C, by performing the thermal cleaning at 1200 °C, the single-crystal AlN layer was obtained, indicating that the thermal cleaning temperature of the substrate is a critical factor for the formation of the interface layer. The epitaxial relationship between the single-crystal AlN layer and the diamond (1 1 1) substrate was determined to be [0 0 0 1]_AlN∥[1 1 1]_diamond and [1 0 1¯ 0]_AlN∥[1 1¯ 0]_diamond. The AlN surface had Al polarity and no inversion domains were observed in the AlN layer.     

Growth of GaN films on PLD-deposited TaC substrates

GaN films were grown by metal organic chemical vapor deposition on TaC substrates that were created by pulsed laser deposition of TaC onto (0 0 0 1) SiC substrates at ∼1000 °C. This was done to determine if good quality TaC films could be grown, and if good quality GaN films could be grown on this closely lattice matched to GaN, conductive material. This was done by depositing the TaC on on-axis and 3° or 8° off-axis (0 0 0 1) SiC at temperatures ranging from 950 to 1200 °C, and examining them using X-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The GaN films were grown on as-deposited TaC films, and films annealed at 1200, 1400, or 1600 °C, and examined using the same techniques. The TaC films were polycrystalline with a slight (1 1 1) texture, and the grains were ∼200 nm in diameter. Films grown on-axis were found to be of higher quality than those grown on off-axis substrates, but the latter could be improved to a comparable quality by annealing them at 1200–1600 °C for 30 min. TaC films deposited at temperatures above 1000 °C were found to react with the SiC. GaN films could be deposited onto the TaC when the surface was nitrided with NH₃ for 3 min at 1100 °C and the low temperature buffer layer was AlN. However, the GaN did not nucleate easily on the TaC film, and the crystallites did not have the desired (0 0 0 1) preferred orientation. They were ∼10 times larger than those typically seen in films grown on SiC or sapphire. Also the etch pit concentration in the GaN films grown on the TaC was more than 2 orders of magnitude less than it was for growth on the SiC.     

The effect of thermal annealing on the structural and mechanical properties of a-C:H thin films prepared by the CFUBM magnetron sputtering method

a-C:H films were prepared by closed-field unbalanced magnetron (CFUBM) sputtering on silicon substrates using argon (Ar) and acetylene (C₂H₂) gases, and the effects of post-annealing temperature on structural and mechanical properties were investigated. Films were annealed at temperatures ranging from 300 °C to 700 °C in increments of 200 °C using rapid thermal annealing equipment in vacuum ambient. Variations in microstructure were examined using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Surface and mechanical properties were investigated by atomic force microscopy (AFM), nano-indentation, residual stress tester, and nano-scratch tester. We found that the mechanical properties of a-C:H films deteriorated with increased annealing temperature.     

Growth of epitaxial TmFeCuO4 thin films by pulsed laser deposition

Epitaxial thin films of TmFeCuO₄ with a two-dimensional triangular lattice structure were successfully grown on yttria-stabilized-zirconia substrates by pulsed laser deposition and ex situ annealing in air. The films as-deposited below 500 °C showed no TmFeCuO₄ phase and the subsequent annealing resulted in the decomposition of film components. On the other hand, as-grown films deposited at 800 °C showed an amorphous nature. Thermal annealing converted the amorphous films into highly (0 0 1)-oriented epitaxial films. The results of scanning electron microscopic analysis suggest that the crystal growth process during thermal annealing is dominated by the regrowth of non-uniformly shaped islands to the distinct uniform islands of hexagonal base.     

Crystal growth and characterization of GaCrN nanorods on Si substrate

GaCrN nanorods were grown on GaN nanorods by RF-plasma-assisted molecular beam epitaxy. GaN nanorods were grown on Si (0 0 1) substrates with native SiO₂. Cr doping into GaCrN nanorods was conducted at substrate temperatures of 800 and 550 °C. Cross-sectional transmission electron microscopy images revealed that the diameter of GaCrN nanorod gradually increases with growth proceeding at 550 °C, while the growth at 800 °C does not change the nanorod diameter. Low-temperature growth enhances the growth perpendicular to the c-axis and decreases the growth along the c-axis. It was found that the solubility limit of Cr atoms in GaCrN is much higher for the low-temperature growth than for the high-temperature growth. It was also found that the highest saturation magnetization is obtained at some optimum Cr cell temperature.     

Structural evolution up to 1100 °C of xerogels prepared from TEOS sonohydrolysis and liquid phase exchanged by acetone

Silica xerogels were prepared from sonohydrolysis of tetraethoxysilane and exchange of the liquid phase of the wet gel by acetone. Monolithic xerogels were obtained by slow evaporation of acetone. The structural characteristics of the xerogels were studied as a function of temperature up to 1100 °C by means of bulk and skeletal density measurements, linear shrinkage measurements and thermal analyses (DTA, TG and DL). The results were correlated with the evolution in the UV-Vis absorption. Particularly, the initial pore structure of the dried acetone-exchanged xerogel was studied by small-angle X-ray scattering and nitrogen adsorption. The acetone-exchanged xerogels exhibit greater porosity in the mesopore region presenting greater mean pore size (∼4 nm) when compared to non-exchanged xerogels. The porosity of the xerogels is practically stable in the temperature range between 200 °C and 800 °C. Evolution in the structure of the solid particles (silica network) is the predominant process upon heating up to about 400 °C and pore elimination is the predominant process above 900 °C. At 1000 °C the xerogels are still monolithic and retain about 5 vol.% pores. The xerogels exhibited foaming phenomenon after hold for 10 h at 1100 °C. This temperature is even higher than that found for foaming of non-exchanged xerogels.     

Distribution of oxidation states of Cr ions in Ca or Ca/Mg co-doped Cr:Y3Al5O12 single-crystal fibers with nitrogen or oxygen annealing environments

The valence states of Cr ions in Ca or Ca/Mg co-doped Cr:Y₃Al₅O₁₂ (YAG) single-crystal fibers are studied. The fibers were grown using the laser-heated pedestal growth method, followed by annealing treatments up to 1500 °C. The concentrations of the Cr³⁺ and Cr⁴⁺ ions in octahedral and tetrahedral sites in oxygen or nitrogen environments were characterized. Above 700 °C, migration of Cr⁴⁺ between octahedral and tetrahedral sites takes place; its relative stabilization energy was estimated. For Ca,Cr:YAG annealed in an oxygen or nitrogen environment, it was 0.25 and 0.3 eV, respectively. For Mg,Ca,Cr:YAG annealed in oxygen or nitrogen, it was 0.47 and 0.49 eV, respectively. For the Ca,Cr:YAG crystal fiber (Ca/Cr=113.1%) with oxygen annealing, about 35% and 2.5% of Ca ions took part in charge compensation for Cr⁴⁺ in the octahedral and tetrahedral sites, respectively. The density of oxygen vacancies depends on the concentration of Ca ions. The estimated ratios of the unreacted oxygen vacancies to total oxygen vacancies were about 63% and 88% for oxygen and nitrogen annealing, respectively. The main limitation on the concentration of Cr⁴⁺ in the tetrahedral site of YAG is the presence of unreacted oxygen vacancies.     

Silicate nanoparticles by bioleaching of glass and modification of the glass surface

Bioleaching is examined as a low temperature (50 °C) soft chemical approach to nanosynthesis and surface processing. We demonstrate that fungus based bioleaching of borosilicate glass enables synthesis of nearly monodispersed ultrafine (∼5 ± 0.5 nm) silicate nanoparticles. Using various techniques such as X-ray diffraction, X-ray photoelectron spectroscopy and FTIR we compare the constitution and composition of the nanoparticles with that of the parent glass, and establish the basic similarities between the two. The bioleaching process is shown to enhance the non-bridging oxygen component and correspondingly influence the Si-O-Si network. The root mean square roughness of glass surface is seen to increase from 1.27 nm for bare glass to 2.52 nm for 15 h fungal processed case, this increase being equivalent to that for glass annealed at 500 °C.     

Phase stability and oxygen doping in the Cu-N-O system

A growth stability diagram for the CuNO system has been determined in the temperature range 250-500 °C for a thermally activated CVD process, based on copper (II) hexafluoroacetylacetonate (Cu(hfac)₂), NH₃ and H₂O. Without any addition of water only Cu₃N was obtained. Addition of water introduces oxygen into the Cu₃N structure to a maximum amount of 9 at% at a water/nitrogen molar ratio of 0.36 at 325 °C. Above this molar ratio Cu₂O starts to deposit, in addition to an oxygen doped Cu₃N phase. Only Cu₂O is deposited at large excess of water.     

Fabrication and thermal evolution of nanoparticles in SiO2 by Zn ion implantation

SiO₂ samples were implanted with 45 keV Zn ions at doses ranging from 5×10¹⁵ to 1.0×10¹⁷ ions/cm², and were then subjected to furnace annealing at different temperatures. Several techniques, such as ultra-violet–visible spectroscopy (UV–vis), grazing incidence X-ray diffraction spectroscopy (GXRD) and atomic force microscopy (AFM), have been used to investigate formation of nanoparticles and their thermal evolution. Our results clearly show that Zn nanoparticles could be effectively formed in SiO₂ at doses higher than 5×10¹⁶ ions/cm². The subsequent thermal annealing at oxygen ambient could induce the growth of Zn nanoparticles at intermediate annealing temperature range. While at temperature above 600 °C, Zn nanoparticles could be transformed into ZnO, or even Zn₂SiO₄ nanoparticles. The results have been tentatively discussed in combination with Zn diffusion and migration obtained by Rutherford backscattering spectroscopy (RBS) measurements.     

Measurement and analysis of the dextran partition coefficient in sucrose crystallization

The effect of crystallization conditions on the dextran partition coefficient between impure syrup and sugar crystal has been investigated in a batch crystallizer. The crystallizer is operated isothermally at temperatures of 30, 40, and 50 °C, at constant relative supersaturations of 0.05, 0.07, and 0.09, and with mother liquor dextran concentrations of 1000 and 2000 ppm/Brix. The dextran content has been determined by the CSR method. A 1:1 mass ratio of high-fraction dextran (approximately 250,000 Da) and low-fraction dextran (60,000-90,000 Da) is used to represent a wide range of dextran contamination. It is seen that the dextran partition coefficient in sucrose crystallization increases with both increasing supersaturation and increasing crystallization temperature. However it appears that these are secondary effects, with the partition coefficient strongly correlating with crystal growth rate alone, despite the regressed data having large variations in temperature, mother liquor dextran content, and supersaturation. Dextran incorporation into the sugar crystal results from both dextran adsorption onto the crystal surface and mother liquor inclusions. The explanation for the variation in the dextran content in sugar crystal with respect to the growth rate is due to increased adsorption due to the higher surface roughness of crystals grown at high growth rates. Although the dextran concentration in the solution affects the dextran content in the crystal, it does not strongly affect the dextran partition coefficient.     

Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals

The intrinsic gettering (IG) of germanium-doped Czochralski (GCZ) silicon with different concentrations of germanium has been investigated in this paper. The conventional Czochralski (CZ) and the GCZ silicon samples were annealed using a one-step high temperature process followed by a sequence of low–high temperature annealing cycles. It was found that the good defect-free denude zones in the near surface of the GCZ silicon could be achieved using simply a one-step high temperature annealing process. Furthermore, the density of bulk microdefects as IG sites was higher than that in the CZ silicon, as a result of germanium enhancing oxygen precipitation during three-step annealing. Meanwhile, the experimental results showed that germanium also enhanced the out-diffusion of oxygen. Furthermore, it is believed that germanium doping can increase the ability of IG in CZ silicon wafers.