An ab initio study of ion-pair states of the Br<Subscript>2</Subscript> molecule

This contribution reports an ab initio study of 18 ion-pair states of the Br₂ molecule correlating with the Br⁺(³P_J=2,1,0,¹D₂) +Br^–(¹S₀) dissociation asymptotes. Calculations were performed on the CASSCF/CASPT2 level of theory taking into account electron correlations and with inclusion of the spinorbit coupling. Ab initio results are compared with the experiment. For gerade and ungerade ion-pair potentials, the difference between calculated and experimental values of the equilibrium internuclear distance does not exceed ΔR_e = ±0.01 and ±0.05 Å, respectively. For the states correlating to the lowest dissociation asymptote Br⁺(³P₂) + Br^–(¹S₀), the accuracy of relative energies is postilions ΔT_e ± 0.02 eV. The dipole moment functions for some transitions between the ion-pair and valence states were calculated as well.     

Frustrated antiferromagnetism in the Sr<Subscript>2</Subscript>YRuO<Subscript>6</Subscript> double perovskite

The spins of Ru⁵⁺ ions in Sr₂YRuO₆ form a face-centered cubic lattice with antiferromagnetic nearest neighbor interaction J≈25 meV. The antiferromagnetic structure of the first type experimentally observed below the Néel temperature T _N =26 K corresponds to four frustrated spins of 12 nearest neighbors. In the Heisenberg model in the spin-wave approximation, the frustrations already cause instability of the antiferromagnetic state at T=0 K. This state is stabilized by weak anisotropy D or exchange interaction I with the next-nearest neighbors. Low D/J～I/J～10^?3 values correspond to the experimental T _N and sublattice magnetic moment values.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Laser spectroscopy of Eu<Superscript>3+</Superscript> cubic centers in the CaF<Subscript>2</Subscript> bulk single crystal

The optical transitions ⁵ D _{0, 1} → ⁷ F _J (J = 0, 1, ..., 6) of Eu³⁺ cubic centers in the CaF₂ single crystal are investigated using combined excitation and emission spectroscopy at different time delays after the excitation pulse. The energies of the Stark sublevels of the ⁷ F _J ground states are determined.     

Ab initio study of I<Subscript>2</Subscript> and T<Subscript>2</Subscript> stacking faults in C14 Laves phase MgZn<Subscript>2</Subscript>

Based on the synchroshear mechanism, the formation of intrinsic stacking fault I ₂ and twin-like stacking fault T ₂ in C14 Laves phases has been modeled in detail and the generalised stacking fault energy curve of I ₂ and T ₂ for C14 Laves phase MgZn₂ has been calculated from first-principles. The results demonstrate that the unstable stacking fault energy of I ₂ by synchroshear is still very large, and the stable stacking fault energy of I ₂ is higher in comparison with pure Mg implying that the formation of I ₂ stacking fault in MgZn₂ is difficult. Starting with the I ₂ configuration, the T ₂ stacking fault can be formed by an additional synchroshear. The unstable and stable stacking fault energies of T ₂ are only slightly larger than those of I ₂, implying that the formation of T ₂ may be essentially similar to that of I ₂. From the obtained generalised stacking fault energy, the relevant deformation mechanism of MgZn₂ is also discussed. Finally, the electronic structure during synchroshear process is further studied.     

Magnetoresistance of La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films grown on a substrate with low lattice mismatch

The structure, electrical resistivity, and magnetoresistance of La_0.67Sr_0.33MnO₃ heteroepitaxial films (120-nm thick) practically unstrained by lattice mismatch with the substrate were studied. A strong maximum of negative magnetoresistance of ≈27% (for μ₀H = 4 T) was observed at T ≈360 K. While the magnetoresistance decreased monotonically in magnitude with decreasing temperature, it was still in excess of 2% at 150 K. For T < 250 K, the temperature dependence of the electrical resistivity ρ of La_0.67Sr_0.33MnO₃ films is fitted well by the relation ρ = ρ₀ + ρ ₁(H)T^2.3, where ρ₀ = 1.1×10^?4 Ω cm, ρ₁(H = 0) = 1.8×10^?9 Ω cm/K^2.3, and ρ₁(μ₀H = 4 T)/ρ₁(H = 0) ≈0.96. The temperature dependence of a parameter γ characterizing the extent to which the electrical resistivity of the ferromagnetic phase of La_0.67Sr_0.33MnO₃ films is suppressed by a magnetic field (μ ₀H = 5 T) was determined.     

Multiphoton mass spectra of XeKr molecules in the range of excited Xe*6<Emphasis Type="Italic">p</Emphasis>[5/2]<Subscript>2, 3</Subscript> atoms

Data on excited states of XeKr molecules in the energy range 78280–77600 cm^?1 are obtained. Using the method of multiphoton laser photoionization of molecules in a supersonic jet, five vibrational progressions of XeKr molecules are obtained, which are attributed to five electronic-vibrational transitions from the ground state of the XeKr molecule of the symmetry 0⁺ to excited states of the symmetry Ω = 0⁺, 1, 2 with the dissociation limit Kr¹ S ₀ + Xe*6p[5/2]₂ and of the symmetry Ω = 1, 2 with the dissociation limit Kr + Xe*6 p [5/2]₃. The molecular constants of the corresponding excited states of the XeKr molecule are estimated.     

Thermodynamics of the frustrated J<Subscript>1</Subscript>-J<Subscript>2</Subscript> Heisenberg ferromagnet on the body-centered cubic lattice with arbitrary spin

We use the spin-rotation-invariant Green’s function method as well as thehigh-temperature expansion to discuss the thermodynamic properties of the frustratedspin-S J ₁-J ₂ Heisenbergmagnet on the body-centered cubic lattice. We consider ferromagnetic nearest-neighborbonds J ₁<0 and antiferromagnetic next-nearest-neighbor bonds J ₂ ≥ 0 andarbitrary spin S. We find that the transition point\hbox{$J_2^c$}J2cbetween the ferromagnetic ground state and theantiferromagnetic one is nearly independent of the spin S, i.e., it is very closeto the classical transition point\hbox{$J_2^{c,{\rm clas}}= \frac{2}{3}|J_1|$}J2c,clas=23|J1|. At finite temperatures we focus on the parameterregime\hbox{$J_2<J_2^c$}J2<J2cwith a ferromagnetic ground-state. We calculate theCurie temperature T _C (S, J ₂)and derive an empirical formula describing the influence of the frustration parameterJ ₂ and spin S on T _C . We find that theCurie temperature monotonically decreases with increasing frustration J ₂, where veryclose to\hbox{$J_2^{c,{\rm clas}}$}J2c,clasthe T _C (J ₂)-curveexhibits a fast decay which is well described by a logarithmic term\hbox{$1/\textrm{log}(\frac{2}{3}|J_1|-J_{2})$}1/log(23|J1|?J2). To characterize the magnetic ordering below and aboveT _C , we calculate thespin-spin correlation functions ?S ₀ S _R ?, the spontaneous magnetization, the uniform static susceptibilityχ ₀ as well as the correlation lengthξ.Moreover, we discuss the specific heat C _V and the temperaturedependence of the excitation spectrum. As approaching the transition point\hbox{$J_2^c$}J2csome unusual features were found, such as negativespin-spin correlations at temperatures above T _C even though theground state is ferromagnetic or an increase of the spin stiffness with growingtemperature.     

Optical characteristics of plasma of I*<Subscript>2</Subscript>, Cl*<Subscript>2</Subscript>, Br*<Subscript>2</Subscript> halogen dimer barrier-discharge excilamps

Barrier-discharge excilamps operating in homonuclear chlorine, bromine, and iodine and their mixtures with inert gases have been studied. The spectral and energy characteristics of the barrier-discharge plasma have been obtained. The conditions have been determined at which the band D′ → A′ predominates in the spectra of molecules I*₂ (342 nm), Cl*₂ (257.8 nm), and Br*₂ (291 nm). The efficiencies of I₂, Cl₂, and Br₂ excilamps were found to be 1.6, 2, and 3.8%.     

High-pressure induced magnetoresistance in <Emphasis Type="Italic">p</Emphasis>-InAs:Mn and <Emphasis Type="Italic">p</Emphasis>-CdGeAs<Subscript>2</Subscript>:Mn

The baric (P ≤ 5GPa) and magnetic-field (H ≤ 5 kOe) dependences of the transverse magnetore-sistance Δρ _xx /ρ₀ have been measured for p-InAs (R _H = 22.5 cm³/C, ρ = 0.15 Ω cm) and the new ferromag-netic semiconductor p-CdGeAs₂ (R _H = 5 cm³/C, ρ = 0.62 Ω cm), doped with a magnetic impurity (Mn), near the temperature T = 297 K. The dependences Δρ _xx /ρ₀ (P, H) for p-InAs:Mn and p-CdGeAs₂:Mn exhibit a magnetoresistive effect with an increase in pressure, and a pressure-induced magnetoresistance hysteresis is observed in p-CdGeAs₂:Mn with a pressure drop.     

Thermopower in the region of hopping conduction in TlNiS<Subscript>2</Subscript>

Samples of the composition TlNiS₂ in the hexagonal system with the unit cell parameters a=12.28 Å, c=19.32 Å, and ρ=6.90 g/cm³ are synthesized. The results of the investigation into the electrical and thermoelectrical properties of TlNiS₂ samples in the temperature range 80–300 K indicate that TlNiS₂ is a p-type semiconductor. It is found that, at temperatures ranging from 110 to 240 K, TlNiS₂ samples in a dc electric field possess variable-range-hopping conduction at the states localized in the vicinity of the Fermi level. The density of localized states near the Fermi level is determined to be N_F=9×10²⁰ eV^?1 cm^?3, and the scatter of the states is estimated as J≈2×10^?2 eV. In the temperature range 80–110 K, TlNiS₂ exhibits activationless hopping conduction. At low temperatures (80–240 K), the thermopower of TlNiS₂ is adequately described by the relationship α(T)=A+BT, which is characteristic of the hopping mechanism of charge transfer. In the case when the temperature increases to the temperature of the onset of intrinsic conduction with the activation energy ΔE=1.0 eV, there arise majority intrinsic charge carriers of both signs. This leads to an increase in the electrical conductivity σ and, at the same time, to a drastic decrease in the thermopower α; in this case, the thermopower is virtually independent of the temperature.     

Exchange Bias in Layered GdBaCo<Subscript>2</Subscript>O<Subscript>5.5</Subscript> Cobaltite

It is established that excess oxygen content δ influences the exchange bias (EB) in layered GdBa-Co₂O_{5 + δ} cobaltite. The EB effect arises in p-type (δ > 0.5) cobaltite and disappears in n-type (δ < 0.5) cobaltite. The main parameters of EB in GdBaCo₂O_5.52(2) polycrystals are determined, including the field and temperature dependences of EB field H _EB , blocking temperature T _B , exchange coupling energy J _i of antiferromagnet–ferromagnet (AFM–FM) interface, and dimensions of FM clusters. The training effect inherent in systems with EB has been studied. The results are explained in terms of exchange interaction between the FM and AFM phases. It is assumed that the EB originates from the coexistence of Co³⁺ and Co⁴⁺ ions that leads to the formation of monodomain FM clusters in the AFM matrix of cobaltite.     

Phase transition in a KPb<Subscript>2</Subscript>Br<Subscript>5</Subscript> crystal

Crystals of the KPb₂Br₅compound are investigated using polarized light microscopy and calorimetry. The birefringence and the angle of rotation of the optical indicatrix are measured in the temperature range 270–620 K. It is found that the KPb₂Br₅ crystal undergoes a first-order ferroelastic phase transition at temperatures T_0↑ = 519.5 K and T_0↓ = 518.5 K with a change in the enthalpy ΔH = 1300 ± 200 J/mol. This transition is accompanied by both twinning and the symmetry change mmm ? P2₁/c. It is revealed that the angle of rotation of the optical indicatrix exhibits an unusual behavior under variations in the temperature due to a strong temperature dependence of the birefringence.     

Peculiarities of magnetic,galvanomagnetic, elastic,and magnetoelastic properties of Eu<Subscript>0.55</Subscript>Sr<Subscript>0.45</Subscript>MnO<Subscript>3</Subscript>

Magnetic, elastic, magnetoelastic, transport, and magnetotransport properties of the Eu_0.55Sr_0.45MnO₃ ceramics have been studied. A break was detected in the temperature dependence of electrical resistivity ρ(T) near the temperature of the magnetic phase transformation (41 K), with the material remaining an insulator down to the lowest measurement temperature reached (ρ=10⁶ Ω cm at 4.2 K). In the interval 4.2≤T≤50 K, the isotherms of the magnetization, volume magnetostriction, and ρ were observed to undergo jumps at the critical field H_C1, which decreases with increasing T. For 50≤T≤120 K, the jumps in the above curves persist, but the pattern of the curves changes and H_C1 grows with increasing T. The magnetoresistance Δρ/ρ = (ρ _H ?ρ_H=0)/ρ _H is positive for H<H_C1 and passes through a maximum at 41 K, where Δρ/ρ = 6%. For H>H_C1, the magnetoresistance is negative, passes through a minimum near 41 K, and reaches a colossal value of 3×10⁵ % at H=45 kOe. The volume magnetostriction is negative and attains a giant value of 4.5×10^?4atH=45 kOe. The observed properties are assigned to the existence of three phases in Eu_0.55Sr_0.45MnO₃, namely, a ferromagnetic (FM) phase, in which carriers are concentrated because of the gain in s-d exchange energy, and two antiferromagnetic (AFM) phases of the A and CE types. Their fractional volumes at low temperatures were estimated to be as follows: ～3% of the sample volume is occupied by the FM phase; ～67%, by the CE-type AFM phase; and ～30%, by the A-type AFM phase.     

Study of absorption spectra of Er<Superscript>3+</Superscript> in KTaO<Subscript>3</Subscript> crystals

The first results of the study of optical absorption spectra of KTaO₃: Er³⁺ crystals are presented. In the 350–660-nm region, lines are observed deriving from intraconfigurational electronic transitions from the ⁴ I _15/2 ground state to levels of the ⁴ F _9/2, ⁴ S _3/2, ² H _11/2, ⁴ F _7/2, ⁴ F _5/2(⁴ F _3/2), ² G _9/2, and ⁴ G _11/2 excited states of the Er³⁺ ions. A comprehensive study of transitions to the ⁴ F _9/2, ⁴ S _3/2, ² H _11/2, and ⁴ F _7/2 levels at 77 K is carried out. The number of lines observed for the above transitions fits the theoretically possible number for ?-? electronic transitions in Er³⁺ ions in the cubic crystal field. In the case of a differently charged substituted ion, this situation occurs only under nonlocal impurity charge compensation. The energies of the excited state levels for the transitions under study are determined.     

Electronic structures of ternary iron arsenides <Emphasis Type="Italic">A</Emphasis>Fe<Subscript>2</Subscript>As<Subscript>2</Subscript> (<Emphasis Type="Italic">A</Emphasis> = Ba,Ca, or Sr)

We have studied the electronic and magnetic structures of the ternary iron arsenides AFe₂As₂ (A = Ba, Ca, or Sr) using the first-principles density functional theory. The ground states of these compounds are in a collinear antiferromagnetic order, resulting from the interplay between the nearest and the next-nearest neighbor superexchange antiferromagnetic interactions bridged by As 4p orbitals. The correction from the spin-orbit interaction to the electronic band structure is given. The pressure can reduce dramatically the magnetic moment and diminish the collinear antiferromagnetic order. Based on the calculations, we propose that the low energy dynamics of these materials can be described effectively by a t-J _H -J ₁-J ₂-type model [2008, arXiv: 0806.3526v2].     

Raman scattering spectroscopy of inclusions of carbon in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films and its solid solutions with HfO<Subscript>2</Subscript>

We apply Raman scattering spectroscopy to study the nature of carbon inclusions in Al₂O₃ and (HfO₂) _x (Al₂O₃)_{1 ? x} films deposited using volatile complex compounds. Raman spectra of the films under investigation contain D and G vibrational modes, which indicate that carbon clusters of the sp ² configuration tend to form in the films. We estimate the size of clusters from the integrated intensity ratio I _D /I _G and find it to be in the range of 14–20 Å. The content of hydrogen in carbon clusters is calculated from the height of the photoluminescence pedestal and is found to vary from 14 to 30 at % depending on the regime of the film’s synthesis.     

Synthesis and electrical conductivity of a new Ag<Subscript>6</Subscript>SnS<Subscript>4</Subscript>Br<Subscript>2</Subscript> superionic compound

The conditions of synthesizing a new Ag₆SnS₄Br₂ compound were studied. The crystallographic parameters of the unit cell were determined as follows: space group Pnma, a=6.67050(10) Å, b=7.82095(9) Å, c=23.1404(3) Å, and Z=4. The total electrical conductivity and its ionic component were measured by a dc probe method in the temperature range 210–380 K. Kinks in the conductivity curve and the differential thermogram of heating the alloy were revealed at 235 K. It was concluded that the mass and charge transfers in the compacted Ag₆SnS₄Br₂ alloy powder have an intragrain character.     

High-frequency EPR of Cr<Superscript>2+</Superscript> ions in CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript>

High-frequency broad-band (65–240 GHz) EPR is used to study impurity centers of bivalent chromium in a CdGa₂S₄ crystal. It is found that the EPR spectra correspond to tetragonal symmetry. The spin Hamiltonian H = βB · g · S + B ₂ ⁰ O ₂ ⁰ + B ₄ ⁰ O ₄ ⁰ + B ₄ ⁴ O ₄ ⁴ with the parameters B ₂ ⁰ =23659±2 MHz, B ₄ ⁰ =1.9±1 MHz, |B ₄ ⁴ |=54.2±2 MHz, g_‖=1.93±0.02, and g_⊥=1.99±0.02 is used to describe the observed spectra. It is concluded that chromium ions occupy one of the tetrahedrally coordinated cation positions.     

Conduction through localized states in a single crystal of the TlGa<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> alloy

Layered single crystals of the TlGa_0.5Fe_0.5Se₂ alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa_0.5Fe_0.5Se₂ crystals are estimated as follows: the density of states near the Fermi level N_F = 2.8 × 10¹⁷ eV^?1 cm^?3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R_av = 233 Å, and the concentration of deep-lying traps N _t = 3.6 × 10¹⁶ cm^?3.