非平衡态对高温超导体光场致发射的影响

由于外加电场的作用 ,高温超导体材料体内电子平衡态的化学势偏移导致出现非平衡状态 ,这种非平衡状态将影响高温超导体光场致发射的性质。文中对高温超导体的光场致发射受非平衡态的影响进行了研究。     

非平衡态对高温超导体场致发射电子能谱的影响

高温超导体场致发射时伴随体内正常态部分空穴的产生 ,引起高温超导体内电子平衡态的化学势偏移导致出现非平衡状态 ,将影响高温超导体场致发射的性质。文中对高温超导体非平衡态场致发射的电子能谱进行了研究     

高温超导体场致发射的非平衡效应

高温超导体场致发射时 ,非平衡状态将使电场在超导发射体内增加穿透深度 ,这将使其场发射性质发生改变。本文对高温超导体场致发射的非平衡状态进行了研究。     

高温超导体超导态的光场发射研究

场致发射在低于场致发射电场阈值的场强作用下,发射体受脉冲激光照射时将会产生光场发射本文对高温超导体临界温度以下光场发射做一定的研究,并与高温超导体一般的场致发射情况做了一定的比较,两者有不同的发射规律．１引言 光场发射是发射体处于电场强度不及但接近场致发射阈值场强的条件下,输人激光脉冲激发电子发射的现象,其发射电子流受光脉冲控制．在低于场致发射电场阈值的场强作用下,高温超导体受脉冲激光照射也可以产生光场发射．当温度降到临界温度以下时高温超导体材料由正常态变成超导态,体内的电子形成库柏对,能隙会引…     

电场穿透对高温超导体场致发射电流的影响

高温超导体在场致发射时伴随正常态部分的空穴的产生 ,会出现非平衡现象。这会引起超导体电子平衡态的化学势偏移 ,增加外电场在高温超导体发射体内的穿透深度 ,使导带底弯曲影响超导体场致发射的电流。     

高温超导体超导态的场致发射

高温超导体处在临界温度以下时，能隙会引起体内电子分布的改变。本文在考虑到能隙对体内电子分布影响时，分析了高温超导体的场致发射电流密度和场致发射电子能谱。     

高温超导体电场穿透对电子能谱的影响

高温超导体在场致发射时伴正常态部分的空穴的产生，会出现非平衡现象。这引起超导体电子平衡态的化学势偏移，增加了外电场在ＨＴＳＣ材料体内的穿透深度，使导带底弯曲引起超导体场致发射电子能谱的改变。     

532nm激光照射碳纳米管光场致发射电子枪(英文)

报道了碳纳米管光场致发射电子枪的初步研究结果。在532nm激光照射下碳纳米管光场致发射电子枪在极间高压为27kV时得到的最大的脉冲流强可以达到3.364A,其脉冲电流发射密度可达6.728A/cm2,对应脉冲电荷量为38.7nC。碳纳米管的量子效率通过公式计算为3.73×10-5,给出了在532nm激光照射下碳纳米管光场致发射电子枪发射电流随激光功率和极间电压的变化关系。     

临界温度左右高温超导体场发射电子能谱研究

本文研究了临界温度以上电场穿透发射体表面对高温超导体的场致发射电子能谱随温度变化的影响和临界温度以下能隙对场发射电子能谱影响的情况．并对理论计算的结果与实验结论做了比较．     

高温超导体场致发射电流理论研究

考虑到外电场在表面穿透引起导带能级变化的情况，推导了高温超导体的场致发射电流密度公式．利用该公式计算的结果与实验相符．     

Characterization of GaN nanostructures by electron field and photo-field emission

The electron field and photo-field emission from GaN nanostructures has been analyzed in this review. In order to explain the obtained experimental results, a model was proposed taking into account the change in carrier concentration distribution in the main and the satellite valley during the emission process. The lowering of work function (due to the increased number of carriers in the satellite valley) can explain the decrease in the Fowler-Nordheim plot slope. It was shown that the energy difference between the main and satellite valley in GaN was decreased in the case of quantum confinement, thus increasing the probability of electron transition from Γ to X valley at same electric fields.Investigations of electron photo-field emission demonstrated that the Fowler–Nordheim plots of the emission current have different slopes for nonilluminated and illuminated devices. A model based on the electron emission from valleys having different specific electron affinities is proposed to explain the experimental results. In the absence of illumination the emission takes place only from the lower valley. Upon UV illumination and presence of a high electric field at the emitter tip, the upper valley of the conduction band appears to be occupied by electrons generated at the valence band.     

Laser-photofield emission from needle cathodes for low-emittance electron beams

Illumination of a ZrC needle with short laser pulses (16 ps, 266 nm) while high voltage pulses (-60 kV, 2 ns, 30 Hz) are applied, produces photo-field emitted electron bunches. The electric field is high and varies rapidly over the needle surface so that quantum efficiency (QE) near the apex can be much higher than for a flat photocathode due to the Schottky effect. Up to 150 pC (2.9 A peak current) have been extracted by photo-field emission from a ZrC needle. The effective emitting area has an estimated radius below 50 microm leading to a theoretical intrinsic emittance below 0.05 mm mrad.     

Numerical transmission probabilities and the oscillatory photo-induced field emission current: Static and dynamic image charge effects

Numerical calculations are reported for the transmission probability of electrons incident upon a model potential barrier typically used in discussing electron emission from metal surfaces. These calculations are utilized in an attempt to explain the unexpected oscillatory photocurrent which was observed in a previous study of the electric field dependence of the photoinduced field emission current. Transmission resonances are observed in these calculations and a simple theory is described which adequately accounts for the electric field strengths at which these resonances occur. An important result of these calculations is that the model potential barrier given by $\text{V(x) = ?eFx ? (}\text{1}\text{4π?}{}_0\text{)(}\text{e}{}^2\text{4x}\text{)}$ cannot explain the oscillatory behavior of the photo-field current. Arguments are presented which question the static nature of the image charge potential employed in this simple model and a modification is introduced which incorporates in a very approximate fashion the time dependence involved in the formation of the image charge potential. Calculations based on this model correctly predict the periodicity of the observed oscillations and give a frequency which is in reasonable agreement with the measured value.     

FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GaAs

We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been performed on high purity n-GaAs at 4.2K. Except for photothermal ionization process, a new far-infrared photoconductivity (FIRPC) mechanism is observed. This photo ionization process is assisted by impact ionization and depends on external electric field. This new mechanism originates from photo-field ionization.     

脉冲电场下两种电极材料表面电子发射阈值特性的实验研究

研究了金属表面电子发射阈值的测量原理.以待测材料为阴极,以法拉第筒作为阳极收集电子.在"晨光号"加速器上,测量了不同粗糙度的304L不锈钢和铝表面电子发射阈值及经表面涂覆工艺处理后这两种电极材料表面电子发射阈值.研究发现:电极表面磨光可以抑制电子发射,随着粗糙度的增加,电子发射阈值降低;金属表面涂覆对抑制电子发射效果更为显著,电子发射阈值增加了一倍.     

深紫外激光光发射与热发射电子显微镜在热扩散阴极研究中的应用

对热扩散阴极表面微区发射状态进行原位观察和分析一直是热阴极研究的重要课题.本文着重介绍深紫外激光光发射电子/热发射电子显微镜的基本原理及其在热扩散阴极研究中的典型实例.系统配备了高温激活所用的加热装置,样品可被加热至1400℃.系统具有光发射电子、阴极热发射电子、光发射电子和阴极热发射电子联合三种电子成像模式.应用表明,对于热扩散阴极而言,深紫外激光光发射电子像适于呈现阴极表面的微观结构形貌;热发射电子像适于反映阴极表面的本征热电子发射及均匀性;光电子和热电子联合成像适于对阴极表面的有效发射点做出精确定位.     

二次电子发射对质子束流测量精度的影响

二次电子发射直接影响法拉第探测器测量质子束流的精度,减小或消除二次电子发射的影响是提高束流测量精度的关键。根据二次电子补偿原理设计了二次电子补偿型同轴法拉第探测器,实验发现探测器测量质子束流强度时不能完全实现二次电子补偿。为改进和完善探测器的设计,从理论上分析了补偿片未能完全消除二次电子对束流测量影响的原因,是由于补偿片前向发射二次电子数目大于收集极后向发射二次电子数目所致。为此设计了质子束穿过金属箔发射二次电子测量装置,测量得到能量为5~10MeV质子穿过10μm厚铜箔时前向与后向发射二次电子产额,验证了理论分析的正确性。     

50~250 keV质子入射SiC和Si靶时的电子发射特性研究

在中国科学院近代物理研究所兰州重离子加速器国家实验室测量了能量范围为50~250 keV 的质子入射碳化硅靶和硅靶表面的电子发射产额。实验结果发现,两种半导体靶材的电子发射产额随质子入射能量变化趋势均与作用过程中电子能损随质子入射能量的变化趋势相似。通过分析电子发射的能量来源,发现实验中电子发射产额主要由动能电子发射产额贡献,势能电子发射产额可以忽略不计。两种靶材的电子发射产额均近似地正比于质子入射靶材过程中的电子能损,比例系数B随入射能量略有变化。