氮化镓基发光二极管产业化中的材料物理问题

第三代半导体氮化镓化合物半导体已成为蓝光发光二极管的主流材料，国际上的产业化已成规模，国内也有多家处于中试阶段，由于氮化镓基材料中有如此多的问题没有解决，材料制备设备，器件工艺也极需改进及优化，这既给了中国科研人员及工程技术人员一个机遇，也使他们面临着严峻的挑战。     

半导体发光二极管及“蓝光热”

综述了国内外半导体发光二级管在近３０年来的研制、发展和应用．在红色、黄色和绿色超高亮度的半导体发光二级管相继问世并相继推向市场后，９０年代以来，特别是１９９４年以来出现了“蓝光热”，蓝光材料及蓝光器件的研制将是本世纪末、下世纪初高科技的重要领域之一，本文对此作了介绍．     

氮化镓基发光二极管产业化中的材料物理问题

第三代半导体氮化镓化合物半导体已成为蓝光发光二极管的主流材料,国际上的产业化已成规模,国内也有多家处于中试阶段,由于氮化镓基材料中有如此多的问题没有解决,材料制备设备,器件工艺也极需改进及优化,这既给了中国科研人员及工程技术人员一个机遇,也使他们面临着严峻的挑战.     

LED发光二极管特性测试

使用常规实验仪器搭建了LED特性测试系统,测试了LED的伏安特性、光强分布特性、光谱特性、光功率与电流关系特性和发光效率与电流关系特性,得到了LED的阈值电压、正常电压、发光波长、半值角与指向性、峰值波长和光通量等参量.     

中国半导体照明发展综述

半导体照明是21世纪初兴起的产业,也是我国第三代半导体材料成功产业化的第一个突破口,技术发展日新月异,是国际高科技领域竞争的焦点之一。目前,我国半导体照明产业已经形成了完整的产业链,功率白光LED、硅基LED和全光谱LED等核心技术同步国际,紫外LED、可见光通讯、农业光照和光医疗等创新应用走在世界前列。介绍了我国在半导体照明方面的研究进展,回顾了相关产业的发展情况,并对未来进行了展望。     

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管(Ⅱ)

如今，InGaN／GaN基量子阱发光二极管已经商业化，而且InGaN／GaN基量子阱激光二极管已实现连续波室温运转，使用寿命超过10000小时，虽然如此，但还没有完全搞清楚这些器件的发光机理．试验中通常使用连续输出He-Cd激光器（325nm）作光源，或者使用20—50mA注入电流来研究In—GaN量子阱样品或发光二极管光学性质，本文上篇研究了量子阱厚度与发光二极管发光功率的关系，lnGaN和GaN之间的晶格失配产生压电场，从而导致量子束缚斯塔克效应，而量子束缚斯塔克效应强     

p型氮化镓的低温生长及发光二极管器件的研究

采用金属有机物化学气相淀积技术(MOCVD)在蓝宝石衬底上低温(870—980℃)生长p型氮化镓 (p-GaN).用Hall测试仪测量材料的电学性能，发现当温度低于900℃时，材料的电阻率较高 ；在900—980℃均可获得导电性能良好的p-GaN.另外，电导性能除与掺杂浓度有关，还与p- GaN生长条件有关，氮镓摩尔比过低导电性能就较差，过高则会引起表面粗糙.采用优化后的 p-GaN制作了绿光发光二极管器件，发现生长温度越低器件发光强度越高，反向电压也越高 ，但正向电压只是略有升高. 关键词： Ⅲ-Ⅴ族半导体 氮化镓 发光二极管 金属有机物化学气相淀积     

大功率半导体激光器发展及相关技术概述

激光被称为"最快的刀"、"最准的尺"、"最亮的光",与原子能、计算机、半导体并称为20世纪新四大发明.大功率半导体激光器在工业加工、医疗美容、光纤通信、无人驾驶、智能机器人等方面有着广泛的应用.如何实现大功率半导体激光光源,一直以来都是国际的研究前沿和学科热点.为此,简述了大功率半导体激光器的发展历史,综述了大功率半导...     

GaN基垂直结构LED的n型电极结构设计及芯片制备

首先利用电流路径模型分析n型电极尺寸及间距等对垂直结构发光二极管(VS-LEDs)电流分布均匀性的影响,依此设计出一种螺旋状环形结构电极。其次,通过建立有限元分析软件Comsol仿真模型模拟VSLEDs有源层的电流密度分布,发现螺旋状环形结构电极的环间距越小,电流密度分布越均匀。最后,利用VS-LEDs芯片制备技术实现具有螺旋状环形电极的垂直结构LED芯片。实验结果显示,在350 m A电流驱动下,电极环间距为146.25μm的芯片具有最大的功能转换效率,达到26.8%。     

面向显示应用的微米发光二极管外延和芯片关键技术综述

随着显示技术的不断发展,高度微型化和集成化成为显示领域主要的发展趋势.微米发光二极管(lightemitting diode, LED)显示是一种由微米级半导体发光单元组成的阵列显示技术,在亮度、分辨率、对比度、能耗、使用寿命、响应速度和稳定性等方面相比于液晶显示和有机发光二极管显示均具有巨大的优势,应用前景十分广阔,同时也被视为下一代显示技术.目前商用的5G通信技术与显示领域的虚拟现实、增强现实和超高清视频等技术的结合,将进一步推动微米LED显示产业的发展.在面临发展机遇的同时,微米LED显示领域也存在着一些基础科学技术问题需要解决.本文主要总结了微米LED显示从2000年以来的一些研究进展,重点介绍了微米LED显示在外延生长和芯片工艺两方面存在的主要问题和可能的解决方案.在外延生长方面主要介绍了缺陷控制、极化电场控制和波长均匀性等研究进展,芯片工艺方面主要介绍了全彩色显示、巨量转移和检测技术等进展情况,并对微米LED显示在这两方面的发展趋势进行了讨论.     

双进双出射流水冷大功率LED散热系统研究

针对大功率LED存在的散热问题,提出了一种双进双出射流水冷散热器,将其与现有射流水冷散热器的散热效果进行对比,并设计了基于射流水冷的大功率LED散热系统实验平台.在散热系统全功率工作条件下,LED底部温度分布均匀,并且保持在32℃左右,表明散热系统具有良好的均温性能和散热性能,满足大功率LED的散热要求.利用极差分析法,得到了水泵和风扇对系统散热效果的影响权重,优化了散热系统的工作功率,得到一组较优的控制水泵和风扇功率的脉冲宽度调制信号.在该组控制信号下,降低了散热系统的功耗,同时保证了系统散热效果,达到了节能目的.     

顶端ZnO纳米结构对GaN基LED光提取效率的影响

为了提高GaN基蓝光LED的光提取效率,本文建立了LED顶面分别铺设ZnO纳米柱和纳米锥结构的两种模型,利用时域有限差分法对两种模型进行仿真并对结果进行了比较.仿真结果表明,ZnO纳米结构的各项几何结构参量(包括排列周期P、高度L、宽度W以及斜率k等),对LED顶端光提取效率影响显著.仿真分别得到了两种结构的最佳模型,通过比较,LED顶面纳米柱和纳米锥结构对光提取效率的提高效果相近,其最佳提取效率分别增强至无任何结构时的2.5倍和2.3倍.同时,通过对各项参量扫描获得的对光提取效率的变化曲线进行了分析,并给出了相应相应的理论解释.这些模型优化和理论分析对实际的高性能GaN基LED的设计制造有着指导意义.     

LED lighting,ultra-low-power lighting schemes for new lighting applications

In 2018, Solid-State Lighting (SSL) can totally outperform, if properly designed, most of other lighting products used for general lighting applications. This concerns various attributes such as luminous efficacy, life, spectral qualities, dimming potential, and more and more total cost of ownership. SSL can also mimic a large variety of reference light sources from candlelight to sunlight. The absence of international standards concerning LED modules remains the major difficulty for luminaire manufacturers and their clients, since perfectly matching replacement of ever-changing LED modules is not guaranteed over time. But extraordinarily innovative lighting schemes can be developed, bridging the gap between the world of entertainment and the world of general lighting, and leading to new lighting schemes with more powerful emotional content. LED sources, mostly DC driven, also can benefit from progress in photovoltaics and batteries, as well as wireless control to offer integrated solutions. This could radically change the operation of lighting in the next 10 years.     

Novel EGCG assisted ultrasound synthesis of self-assembled Ca2SiO4:Eu3+ hierarchical superstructures: Photometric characteristics and LED applications

This paper reports for the first time ultrasound, EGCG assisted synthesis of pure and Eu³⁺ (1–5 mol%) activated Ca₂SiO₄ nanophosphors having self-assembled superstructures with high purity. The shape, size and morphology of the product were tuned by controlling influential parameters. It was found that morphology was highly dependent on EGCG concentration, sonication time, pH and sonication power. The probable formation mechanism for various hierarchical superstructures was proposed. The PL studies of Ca₂SiO₄:Eu³⁺ phosphors can be effectively excited by the near ultraviolet (UV) (396 nm) light and exhibited strong red emission around 613 nm, which was attributed to the Eu³⁺ (⁵D₀ → ⁷F₂) transition. The concentration quenching phenomenon was explained based on energy transfer between defect and Eu³⁺ ions, electron–phonon coupling and Eu³⁺–Eu³⁺ interaction. The Judd–Ofelt intensity parameters and radiative properties were estimated by using PL emission spectra. The photometric studies indicate that the obtained phosphors could be a promising red component for possible applications in the field of white light emitting diodes.     

LED advances accelerate universal access to electric lighting

A rapid increase in the performance and quality of white LED light sources has changed the dynamics of electricity access in the last 10 years, reaching tens of millions of people with electric light who previously had no viable alternatives to fuel-based lighting, which is dangerous and expensive. Eliminating fuel-based lighting is a key public health, safety, social equality, and environmental opportunity that is now achievable. Technology advances in LEDs, other super-efficient appliances, solar photovoltaic generation, advanced batteries, and coordinating information technology systems have combined to significantly expand the reach of off-grid energy systems. With support and effort, it is plausible that small “pico-solar” and “solar home” systems could serve over a billion people within a generation, providing basic but highly valued services. Continued progress can be achieved with attention to continued improvements in technology, supporting a growing range of new businesses and enterprises in energy access markets, and synergy with broader human development effort around access to clean water, financial inclusion, and fair access to resources.     

Dual color emitting Eu doped strontium orthosilicate phosphors synthesized by bio-template assisted ultrasound for solid state lightning and display applications

A novel Sr₂SiO₄:Eu (1–5 mol %) superstructures (SS) were synthesized using bio-sacrificial A.V. gel assisted ultrasound method. Powder X-ray diffraction patterns confirmed the presence of both α and β phase formation. It was evident that the morphological growth was highly reliant on A.V. gel concentration, sonication time, pH and sonication power. The formation mechanisms for different hierarchical SS were proposed. From diffuse reflectance spectra, the energy band gap was estimated and found to be ∼4.70–5.11 eV. The photoluminescence emission spectra for the excitation at 392 nm, shows characteristic emission peaks at 593, 613, 654 and 702 nm which were attributed to ⁵D₀ → ⁷F₀, ⁷F_1, ⁷F₂ and ⁷F₃ transitions of Eu³⁺ ions respectively. Conversely, when the samples were subjected to the heat treatment at 850 °C for 3 h under argon atmosphere, display an intense broad emission peak with two de-convoluted peaks at 490 and 550 nm due to 4f⁶5d¹→4f¹ (⁸S_7/2) transitions of Eu²⁺ ions. The concentration quenching phenomenon was discussed which attributes to energy transfer, electron–phonon coupling and ion–ion interaction. The Judd–Ofelt intensity parameters and other radiative properties were estimated by using emission spectra. The CIE chromaticity coordinate values of Sr₂SiO₄:Eu²⁺ and Eu³⁺ nanophosphors were located in green and red regions respectively. The calculated CCT and CRI values specify that the present phosphor can be fairly useful for both green and red components of white LED’s. Luminescence decay and quantum yield suggest the suitability of this phosphor as an efficient luminescent medium for light emitting diodes. Overall, the results elucidated a rapid, environmentally benign, cost-effective and convenient method for Sr₂SiO₄:Eu³⁺ synthesis and for the possible applications such as solid state lighting and display devices.     

It's not easy being green: Strategies for all‐nitrides,all‐colour solid state lighting

The design strategy presently employed to obtain ‘white’ light from semiconductors combines the emission of an InGaN blue or UV light‐emitting diode (LED) with that of one or more yellow‐orange phosphors. While commercially successful, this approach achieves good colour rendering only by increasing the number and spectral range of the phosphors used; compared to the alternative of combining ‘true’ red, green and blue (RGB) sources, it is intrinsically inefficient. The two major roadblocks to the RGB approach are 1. the green gap in the internal quantum efficiency (IQE) of LEDs; 2. the diode droop in the efficiency of LEDs at higher current densities. The physical origin of these effects, in the case of III‐nitrides, is generally thought to be a combination of Quantum Confined Stark Effect (QCSE) and Auger Effect (AE). These effects respectively reduce the electron–hole wave‐ function overlap of In‐rich InGaN quantum wells (QW), and provide a non‐radiative shunt for electron–hole recombination, particularly at higher excitation densities. SORBET, a novel band gap engineering strategy based upon quantum well intermixing (QWIM), offers solutions to both of the roadblocks mentioned above. In this introduction to SORBET, its great potential is tested and confirmed by the results of simulations of green InGaN diodes performed using the TiberCAD device modelling suite, which calculates the macroscopic properties of real‐world optoelectronic and electronic devices in a multiscale formalism. An alternative approach to the realisation of RGB GaN‐based LEDs through doping of an active layer by rare earth (RE) ions will also be briefly described. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

Significant progress in the power conversion efficiency and brightness of InGaN-based light emitting diodes (LEDs) has paved the way for these devices to be considered for LED lighting. In this realm, however, the efficiency must be retained at high injection levels in order to generate the lumens required. Unfortunately, LEDs undergo a monotonic efficiency degradation starting at current densities even lower than 50 A/cm² which would hinder LED insertion into the general lighting market. The physical origins for the loss of efficiency retention are at present a topic of intense debate given its enormous implications. This paper reviews the current status of the field regarding the mechanisms that have been put forward as being responsible for the loss of efficiency, such as Auger recombination, electron overflow (spillover), current crowding, asymmetric injection of electrons and holes, and poor transport of holes through the active region, the last one being applicable to multiple quantum well designs. While the Auger recombination received early attention, increasing number of researchers seem to think otherwise at the moment in that it alone (if any) cannot explain the progressively worsening loss of efficiency reduction as the InN mole fraction is increased. Increasing number of reports seems to suggest that the electron overflow is one of the major causes of efficiency degradation. The physical driving force for this is likely to be the relatively poor hole concentration and transport, and skewed injection favoring electrons owing to their relatively high concentration. Most intriguingly there is recent experimental convincing evidence to suggest that quasi-ballistic electrons in the active region, which are not able to thermalize within the residence time and possibly longitudinal optical phonon lifetime, contribute to the carrier overflow which would require an entirely new thought process in the realm of LEDs.     

LED灯具道路照明效果模拟与分析

为适应半导体产业的迅猛发展和环保节能的迫切要求,将LED作为一种新的能源方式应用到照明产业中。选取几种有代表性的LED路灯作为研究对象,根据各自不同形状的配光曲线,利用照明仿真软件Dialux对这些LED灯具在不同的布灯方式下在道路上的光照度分布情况进行模拟和分析比较,总结出适合于道路照明的LED路灯应具有的配光曲线特征,为LED灯具设计提供参考。     

基于虚拟仪器的LED光电参数测试系统

在LED产业飞速发展的今天,LED的光学、色度学和电学参数的精确测试对于提高LED的产品质量、满足市场需求具有重要的意义。研究和分析了LED光学色度学电学参数标准化测量的原理、要求及实现方法,并据此设计并实现了光电算一体化的测试系统,使用NI USB6210数据采集卡在虚拟仪器平台上完成了数据采集、算法设计、界面设计的任务,能够根据所测光谱较好地实现对LED峰值波长、峰值波长半宽度、质心波长、色品坐标、纯度、相关色温、正向电压/电流等参数的综合测试。本系统具有界面简洁、算法可靠、结果稳定的优点,使用该系统分别测得五种单色LED的各项参数,测试结果的平均误差小于3%,可见其测试效果较理想,具有较好的一致性。