半导体激光放大器用于啁啾补偿的研究

详细分析了饱和工作状态下的行波半导体激光放大器的啁啾特性，从理论上证了实了利用其增益饱和所引起的自相位调制来对光源啁啾和光纤色散进行啁啾补偿的可行性，并且发现，对于不同脉宽的入射脉冲，光放大器均能发挥相位补偿的作用，这一特性可用来在长距离光纤传输系统中，对微弱啁光脉冲同时进行能量和相位的补偿。     

基于半导体光放大器中交叉增益调制效应的波长转换啁啾特性的分析

对基于半导体光放大器中交叉增益调制效应的波长转换后信号的啁啾特性进行了分析。研究了输入信号光和参考光和功率、波长、转换速率、信号光消光比以及半导体光放大器的偏置电流对转换后信号啁啾的影响。     

半导体光放大器增益及发光特性的理论研究

半导体光放大器(SOA)的非线性特性在光开关、波长变换、光逻辑运算中有重要的应用.研究了注入电流、入射光波长及SOA有源区长度对SOA增益和发光功率的影响.数值模拟结果表明:注入电流的增加,会引起载流子浓度的增加,且使SOA增益趋于饱和的速率加快;不同的SOA模型存在一个最佳输入光波长,在此波长附近有较好的增益特性;加长半导体光放大器有源区长度可获得更大增益,同时提高了器件的响应速率.     

半导体光放大器的稳态增益饱和特性

高速全光逻辑门是实现光分组交换、光计算和未来高速大容量光传输的关键器件,近年来受到广泛的关注。半导体光放大器（SOA）因为具备体积小、工作波长范围宽、响应时间短及良好的非线性特性等优点,成为研制高速全光逻辑器件的首选。采用分段模型分析了SOA的稳态增益饱和特性,通过数值求解载流子速率方程和光传输方程对其特性进行了仿真实现。结果表明,SOA在入射光功率不同时会表现出明显的非线性;在一定范围内增加光功率,SOA增益持续增加,继续增加入射光功率,SOA逐渐进入饱和吸收状态,增益反而降低。     

半导体光放大器超快折射率变化动态特性的研究

建立了分析半导体光放大器（SOA）飞秒量级超快动态特性的数值模型,考虑了增益色散以及群速度色散,能更精确地反映飞秒级超短脉冲经过SOA时的传输特性.基于该模型,可以分析由载流子密度脉动以及载流子加热对折射率变化的影响.同时,也考虑了不同的工作条件以及SOA的结构参数对折射率的影响.理论分析和模拟实验为优化SOA的结构、改善SOA飞秒量级超高速动态特性提供了理论指导.关键词：半导体光放大器折射率动态特性增益色散群速度色散     

增益半导体光放大器的特性

为满足半导体光放大器（SOA）在光纤到户FTTH系统接入网中的广泛应用,提出了基于光纤光栅外腔反馈型GC-SOA结构的全光增益机制,窄线宽激光光源经可变衰减器、隔离器和光纤光栅注入到SOA中,SOA的输出光经隔离器和光纤光栅送至光谱分析仪,通过光纤光栅反馈输入SOA形成钳制激光。对GC-SOA的阈值特性、增益特性及开关特性进行分析,结果表明：当注入电流小于GC-SOA的阈值电流时,增益随注入电流的增加而增加;当注入电流大于GC-SOA的阈值电流后,其增益不再随注入电流的变化而变化,实现了SOA的增益稳定,使SOA的饱和输出功率得到了提高。

     

增益半导体光放大器的特性

为满足半导体光放大器（SOA）在光纤到户FTTH系统接入网中的广泛应用,提出了基于光纤光栅外腔反馈型GC-SOA结构的全光增益机制,窄线宽激光光源经可变衰减器、隔离器和光纤光栅注入到SOA中,SOA的输出光经隔离器和光纤光栅送至光谱分析仪,通过光纤光栅反馈输入SOA形成钳制激光。对GC-SOA的阈值特性、增益特性及开关特性进行分析,结果表明:当注入电流小于GC-SOA的阈值电流时,增益随注入电流的增加而增加;当注入电流大于GC-SOA的阈值电流后,其增益不再随注入电流的变化而变化,实现了SOA的增益稳定,使SOA的饱和输出功率得到了提高。     

利用较完善模型研究半导体光放大器对皮秒光脉冲的放大

提出了一个描述半导体光放大器（SLA）对皮秒脉冲的放大这一物理过程的较为完善的物理模型,并数值分析了光脉冲经SLA放大后的上升时间和下降时间.结果表明：随着SLA偏置电流的增大,上升时间将缩短而下降时间将延长;输入脉冲的大峰值功率将加速上升时间的缩短和下降时间的延长;增益压缩对脉宽为几个皮秒的输入脉冲的上升时间和下降时间有明显的影响,而对脉宽为几十皮秒的输入脉冲可近似认为没有影响;增益非对称和漂移强烈影响上升和下降时间.关键词：半导体光放大器皮秒光脉冲上升和下降时间     

F-P半导体激光放大器弱信号机制下的增益特性研究

利用直接耦合的激光器放大器对,观察了弱信号机制下Fabry-Perot的半导体激光放大器的光放大.测量了放大器增益随放大器注入电流的变化关系,并将实验结果同理论模型相比较,发现理论和实验是一致的.把F-P放大器看作是一个光电探测器,通过测量放大器的短路光电流,得到了激光器同放大器之间的耦合效率.     

半导体光放大器亚皮秒量级超快动态特性的研究

通过考虑脉冲频谱的增益色散,提出了一个分析亚皮秒光脉冲在半导体光放大器(SOA)中传输的新思路.分别对超快光脉冲在时域和频域内进行离散化,建立了一个更为合理的传输数值模型.基于该模型,观察到了脉冲频谱的明显漂移,并探讨了漂移量与脉冲载波波长、脉冲能量、脉冲宽度、SOA长度和注入电流等外部条件之间的关系,从理论上解释了文献没有证实的实验结果.同时,基于交叉增益调制原理,利用双光束结构,描述了载流子加热、光谱烧孔效应和双光子吸收等非线性效应引起的增益压缩.理论分析的结果为改善SOA的动态特性提供了指导. 关键词：半导体光放大器超快非线性效应增益色散性     

半导体光放大器增益波动的研究

详细研究了行波半导体光放大器的增益波动特性，理论模型的建立舍弃了通常采用的载流子在光放大器中沿腔长方向均匀分布的假设。分析表明，光放大器增益波动的大小与器件端面反射率、自发发射因子以及入射光功率等因素有关。理论计算与实验结果得到了较好的吻合     

Quantum Dot Versus Quantum Well Semiconductor Optical Amplifiers for Subpicosecond Pulse Amplification

The performance of quantum well and quantum dot semiconductor optical amplifiers was theoretically investigated. The effects on subpicosecond pulse propagation due to gain and refractive index dispersion, calculated using a microscopic polarization equation and a reduced wave equation in the linear regime including the background refractive index dispersion, were used in the comparison. In particular, the spectral shift and phase modulation imposed on the pulse were compared. It is shown that quantum dot amplifiers suffer comparable spectral shifts to the quantum well amplifier, strong linear frequency chirp and large pulse broadening. In quantum dot amplifiers with small inhomogeneous broadening, similar pulse break-up is shown as that calculated for the quantum well amplifier. In quantum dot amplifiers with large inhomogeneous broadening, the background refractive index dispersion makes the linear frequency chirp the dominant feature. In the light of our calculations, the advantages and disadvantages of quantum dot and quantum well amplifiers are discussed.     

直接扣除法测量半导体光放大器频率响应

在光电子器件散射参量定义的基础上建立了基于直接扣除法的半导体光放大器频率响应测量系统,测量中通过扣除激光器和探测器系统的频率响应,得到放大器固有的频率响应。对InGaAsP体材料行波腔半导体光放大器样品进行了测量,得到了放大器在不同注入光功率和不同偏置电流下的频率响应曲线。这些曲线很好地反应了半导体光放大器的增益饱和和噪声特性,进一步分析发现半导体光放大器对低频调制信号的放大能力弱于对高频信号的放大能力,分析认为其原因在于半导体光放大器的载流子寿命有限导致低频信号长时间消耗载流子时,载流子数量无法及时恢复,从而使得增益降低。     

Influence of Nonlinear Gain Saturation on the Time-Bandwidth Product of Optical Pulse from a Gain-Switched Semiconductor Laser

It is found numerically that the time-bandwidth product (TBP) of optical pulse from a gain-switched semiconductor laser operating under a sufficient gain saturation condition increases monotonously with increasing modulation amplitude. This enhancement of the TBP becomes remarkable for longer-wavelength semiconductor lasers (1.3, 1.55 μm) having large value of the gain compression factor ε (∼ 10⁻²³ m³), making the pulse chirp estimation using the TBP difficult.     

Mode Amplification in Inhomogeneous QD Semiconductor Optical Amplifiers

We present modelling results investigating the carrier dynamics of an SOA composed of an inhomogeneous array of quantum dots designed to produce broad gain amplification when optically pumped. We use a set of rate equations that describe the QDs inhomogeneity and include an energy dependent occupation factor within each inhomogeneously broadened level and numerically solve them with the propagation equation to investigate the amplification of optical signals in the waveguide. By treating the carrier filling according to the quasi-equilibrium distribution, we are able to investigate the effect of band-filling (BFE) on the gain and refractive index. The linewidth enhancement factor (α) is computed and analysed with respect to optical signal intensity as well as electrical current density.     

The Impact of Signal Properties with Unbalanced Traffic on SOA Switches in Optical Packet Switched Networks

In this paper, we present the property evaluated modeling of switching matrix based on the XGM in SOA for optical packet-switched networks. Crosstalk-induced bit error rate (BER), packet error rate (PER), the dimension of the switching node and cascaded capacity under unbalanced traffic are examined, which proves to be relevant to the peculiarities of signal pulse such as initial chirp, shape and bit rate.Several rules are drawn to facilitate the design of SOA-based switching matrix under unbalanced traffic.     

Properties of Optical Phase-Locked Loop Based on Four Wave Mixing in Semiconductor Laser Amplifiers

In this paper, the properties of the optical phase-locked loop(PLL) based on the four-wave mixing in the semiconductor laser amplifiers (SLAs) are discussed. The components that achieve the function of detecting the bit phase of the input optical signal are concerned and discussed in detail together as a function module named as the optical bit phase detector referred to the general electronic PLL. Therefore, most of the properties of the optical PLL can be analyzed by applying the general phase-locked theory. Here the stability of the optical PLL is discussed. It's shown that the variance of input signal power in the practical application will cause optical PLL system unstable because of its long loop delay. The influence on the output phase jitter of the optical PLL is also investigated.     

半导体光放大器中光波传输特性研究

根据半导体光放大器(SOA)载流子速率方程和光波在SOA内的传输方程,采用分段的方法计算出光波功率和相位与载流子浓度的关系公式。在泵浦光输入功率分别为5mW和15mW情况下通过仿真得到泵浦光输出波形和归一化转换光波形,其中归一化转换光的波形变化可间接体现不同泵浦光输入功率对SOA内载流子浓度的影响。分析了泵浦光波长和SOA注入电流对探测光的归一化输出、相位和频率啁啾产生的影响。结果表明,随着泵浦光波长的增加,探测光的三种光波特性曲线逐渐趋于平缓。注入电流将会直接影响到SOA的载流子浓度,以此对探测光的输出产生影响,注入电流越大,探测光的频率漂移越远。     

非相干光四波混频研究半导体光放大器超快过程

具体推导了相位共轭型非相干光时延四波混频信号强度随时间延迟的一般变化规律。结果表明：对于用有限线宽非相干光激发源非相干光时延四波混频信号强度随时间延迟的变化规律具有对称性,且强度峰与激发光场带宽成正比,与纵向弛豫速率成反比。这一结果为利用发光二极管作抽运源研究半导体光放大器及有源光波导超快动力学过程提供了理论基础。进而提出了用发光二极管结构的非相干光时延四波混频测量有源介质带间和带内载流子弛豫速率的有效方案。     

Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers

We present a multi-population rate equation model for the analysis of the static and dynamic characteristics of a quantum dot (QD) semiconductor laser. The model is applied to the extraction of the differential gain and linewidth enhancement factor of the QD laser simulating the same kind of experiments usually done in the laboratory. Coherently with the experimental results, we show the difference between the values of the differential parameters extracted in below and above threshold characterizations. We demonstrate that such discrepancy is due the complex dynamics of the carriers in those energy states, whose carrier concentration is not clamped by the stimulated emission process above threshold.