Room temperature observation of nitric oxide on Ir(1 1 1) by scanning tunneling microscopy

Room temperature (RT) adsorption of nitric oxide (NO) on Ir(1 1 1) was studied by scanning tunneling microscopy (STM). At low exposures, NO molecules can not be imaged by STM, because at RT the diffusion of NO is much faster than the STM scanning speed. At high exposures near the saturation coverage, however, a well-ordered 2 × 2 structure is observed. The coverage of the major 2 × 2 species is 0.25 and they can be assigned to the NO molecules adsorbed on the Ir ontop sites. A small number of less bright spots are assigned to nitrogen atoms produced by dissociation. Their number increases by annealing the NO-saturated surface at 380 K. A small number of another dissociation product, oxygen, are observed as black lines, indicating that the diffusion of oxygen atoms is fast. Scratch-like noise features were also detected by the STM, which suggests that a mobile precursor state exists, which was clearly shown by the effects of electron irradiation from the STM tip. These results are consistent with the previous molecular beam studies. Hopping of the 2 × 2 ordered NO species was frequently observed at the anti-phase domain boundaries and edges of the 2 × 2 islands.     

Smoothing of an atomically rough vicinal surface – STM observation and MC simulation

Smoothing of an atomically rough vicinal surface of SrTiO₃ is studied by scanning tunneling microscope (STM) observation and by Monte Carlo (MC) simulation. A complex step pattern that resembles a two-dimensional phase separation pattern is observed on the surface. Analysis of the step pattern during annealing obtained by the STM in comparison with the MC simulation reveals an asymmetry of the relaxation pattern between islands and holes. The asymmetry is attributed to the difference of the mobility of an adatom and an atomic hole, and the asymmetry is enhanced by the step edge diffusion barrier. Values of an effective bond energy and an effective diffusion barrier as well as the surface diffusion coefficient are deduced from the relaxation pattern.     

Effect of uniaxial strain on adatom diffusion across {1 1 1}-faceted step

Diffusion of Pt adatom across the strained {1 1 1}-faceted step is studied by embedded atom method along with nudged elastic band method. For adatom on the flat (1 1 1) surface, the anisotropic diffusion behavior is found as the uniaxial strain is imposed. For the strained {1 1 1}-faceted step, our results show that the maximum energy barrier for adatom crossing step edge remains approximately constant as the strain varied from −1.0% to 1.0%, and there is a rise as the larger uniaxial strain is applied. The calculated energy barrier for adatom diffusion along the step edge increases with increasing tensile strain, and the slope of the straight line is small.     

Diffusion mechanisms for iron on tungsten

Diffusion of iron atoms on clean W(1 0 0) and W(1 1 0) as well as on Fe/W(1 0 0) and Fe/W(1 1 0) surfaces was investigated by means of exhaustive first-principle calculations. Comparison of the activation energy barriers obtained for hopping and exchange migration processes shows that the surface diffusion proceeds via jumps to the nearest sites. The activation energies are higher for Fe adatom on clean tungsten than those for Fe adatoms moving on iron-covered tungsten. The magnetism of the underlying Fe/W(1 0 0) films has a pronounced influence on the diffusion, as evidenced not only by a reduced activation energy barrier but also by a change of the stable adsorption place. Fe atoms reaching step edges are trapped there and eventually diffuse along the steps more slowly than the adatoms on the terraces. The rate of diffusion increases upon depositing a row of Fe atoms along steps.     

扫描隧道显微镜针尖调制的薄膜表面的原子扩散

采用原子尺度的模拟方法,探讨了在零偏压下扫描隧道显微镜(STM)针尖调制的金属表面岛上原子运动及岛边的层间质量输运. 研究结果显示STM的移动对岛上及岛边的原子扩散有重要的影响. 针尖与吸附原子的交互作用及岛和基体中强的形状变化影响了岛上吸附原子的跳跃扩散及岛边的跳下扩散和交换扩散过程. 研究发现,通过调节针尖与基体的垂直距离及针尖与吸附原子的水平距离,可以降低岛上吸附原子的跳跃扩散能垒及岛边的跳下扩散和交换扩散能垒,从而实现薄膜由三维生长模式向二维生长模式的转变. 关键词： 扫描隧道显微镜 原子运动 质量输运     

Diffusion of single adatom Cu on Cu (0 0 1) and (1 1 0) surfaces

With static relaxation, the surface diffusion activation energies of a single Cu adatom migrated by both atomic exchange and hopping mechanisms and the forces acted on the diffusing adatom from other atoms of Cu (0 0 1) or (1 1 0) surface are calculated by using the MAEAM. When adatom migrated on Cu (0 0 1) or (1 1 0) surface, the increment curves of the system energy by hopping mechanism are symmetrical and the saddle points are in the midpoints of the migration path, but the ones by the exchange mechanism are dissymmetrical and the saddle points are always close to the initial hole positions of the adatom and away from the initial equilibrium positions of the exchanged atom. From minimization of both the diffusion activation energy and the force acted on the diffusing adatom from other atoms, we found that, on Cu (0 0 1) surface the favorable diffusion mechanism is hopping mechanism, however, on Cu (1 1 0) surface, hopping via long bridge is easier than the exchange mechanism but the hopping via short bridge is more difficult than the exchange mechanism.     

Diffusion properties of Cu(0 0 1)-c(2 × 2)-Pd surface alloys

Structural and diffusion properties of a Cu(0 0 1)-c(2 × 2)-Pd surface and sub-surface ordered alloys are studied by using interaction potentials obtained from the embedded-atom method. The calculated diffusion energies are in agreement with observed kinetics of the surface alloy formation and confirm stability of the underlayer alloy. Activation energy of planar diffusion of palladium at the initial stage of the alloy formation as well as the activation energy of the overlayer-underlayer diffusion of the Pd atoms are in good agreement with those obtained by the scanning tunneling microscopy and low energy electron diffraction measurements, respectively.     

Early stages of vanadium deposition on Si(1 1 1)-7 × 7

We investigate the low-coverage regime of vanadium deposition on the Si(1 1 1)-7 × 7 surface using a combination of scanning tunnelling microscopy (STM) and density-functional theory (DFT) adsorption energy calculations. We theoretically identify the most stable structures in this system: (i) substitutional vanadium atoms at silicon adatom positions; (ii) interstitial vanadium atoms between silicon adatoms and rest atoms; and (iii) interstitial vanadium - silicon adatom vacancy complexes. STM images reveal two simple vanadium-related features near the Si adatom positions: bright spots at both polarities (BB) and dark spots for empty and bright spots for filled states (DB). We relate the BB spots to the interstitial structures and the DB spots to substitutional structures.     

Probing dynamics of a phase transition of two-dimensional nano-domains with STM imaging and manipulation

A reversible, temperature-driven structural surface phase transition of Pb/Si(1 1 1) nano-domains is studied with a variable-temperature scanning tunneling microscope (STM). Finite-size effects of the transition are clearly demonstrated. Most importantly, structural fluctuations in the low-temperature phase can be induced by the direct interaction between the tip atoms and the surface atoms. The structural changes reveal dynamics in the low-temperature phase. Amazingly, the largest size of the domains that can be manipulated decreases with decreasing sample temperature.     

Island coalescence and diffusion along kinked steps on Cu(0 0 1): Evidence for a large kink Ehrlich-Schwoebel barrier

Using temperature-variable scanning tunneling microscopy, we studied the coalescence of vacancy islands on Cu(0 0 1) in ultra-high vacuum. From the temperature dependence of the relaxation of merged vacancy islands to the equilibrium shape we obtain an activation energy of the island coalescence process of 0.76 eV. From that value we deduce an activation energy for the atomic hopping coefficient of E_Γh=0.89 eV. Comparing our result with previous STM data on step fluctuations with dominant diffusion along straight step segments (E_Γh=0.68 eV; [M. Giesen, S. Dieluweit, J. Mol. Catal. A: Chem. 216 (2004) 263]) and step fluctuations with kink crossing (E_Γh=0.9 eV; [M. Giesen-Seibert, F. Schmitz, R. Jentjens, H. Ibach, Surf. Sci. 329 (1995) 47]), we conclude that there is a large extra barrier for diffusion of atoms across kinks on Cu(0 0 1) of the order of 0.23 eV. This is the first direct experimental evidence for the existence of a large kink Ehrlich-Schwoebel barrier on Cu(0 0 1).     

Chemical fingerprinting at the atomic level with scanning tunneling spectroscopy

Scanning tunneling spectroscopy (STS) based on scanning tunneling microscopy (STM) makes it possible to map the local electronic density of states for clean surfaces and for those with adsorbates. We have developed a protocol that allows us to obtain the spectral fingerprints of halogen atoms on Si(0 0 1), and we use those fingerprints to distinguish between adatom species for surfaces with Cl and Br mixed adsorbates. The key to the process is the energy distribution of the antibonding states that depend on the halogen species.     

Ethylene dissociation on flat and stepped Ni(1 1 1): A combined STM and DFT study

The dissociative adsorption of ethylene (C₂H₄) on Ni(1 1 1) was studied by scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. The STM studies reveal that ethylene decomposes exclusively at the step edges at room temperature. However, the step edge sites are poisoned by the reaction products and thus only a small brim of decomposed ethylene is formed. At 500 K decomposition on the (1 1 1) facets leads to a continuous growth of carbidic islands, which nucleate along the step edges.DFT calculations were performed for several intermediate steps in the decomposition of ethylene on both Ni(1 1 1) and the stepped Ni(2 1 1) surface. In general the Ni(2 1 1) surface is found to have a higher reactivity than the Ni(1 1 1) surface. Furthermore, the calculations show that the influence of step edge atoms is very different for the different reaction pathways. In particular the barrier for dissociation is lowered significantly more than the barrier for dehydrogenation, and this is of great importance for the bond-breaking selectivity of Ni surfaces.The influence of step edges was also probed by evaporating Ag onto the Ni(1 1 1) surface. STM shows that the room temperature evaporation leads to a step flow growth of Ag islands, and a subsequent annealing at 800 K causes the Ag atoms to completely wet the step edges of Ni(1 1 1). The blocking of the step edges is shown to prevent all decomposition of ethylene at room temperature, whereas the terrace site decomposition at 500 K is confirmed to be unaffected by the Ag atoms.Finally a high surface area NiAg alloy catalyst supported on MgAl₂O₄ was synthesized and tested in flow reactor measurements. The NiAg catalyst has a much lower activity for ethane hydrogenolysis than a similar Ni catalyst, which can be rationalized by the STM and DFT results.     

Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.     

Formation and stabilization of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template

We demonstrate the growth of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template by in situ scanning tunneling microscopy (STM). These clusters form near a dimer row at one side of the half-unit cell (HUC); and with three different equivalent orientations. A cluster model comprising three top layer Si atoms bonded to six Fe atoms at the next layer in the 7 × 7 faulted-half template is proposed. The optimized cluster structure determined by first-principles total-energy calculation shows an inward-shifting of the three center Fe atoms. The clusters and the nearby center-adatoms of the next HUCs appear with a significantly reduced height below bias voltages 0.4 V in high resolution empty-state STM images, suggesting an energy gap opening near the Fermi level at these localized cluster and adatom sites. We explain the stabilization of the clusters on the 7 × 7 template using the gain in electronic energy as the driving force for cluster formation.     

STM study of Si(1 1 3) 3 × 2-Ga surface

The Ga-adsorbed structure on Si(1 1 3) surface at low coverage has been studied by scanning tunneling microscopy (STM). The bright protrusion corresponding to the position of the dimer without the interstitial Si atom of the clean surface disappeared in the filled-state STM image after Ga adsorption, although the protrusion due to the Si adatom still remained. On the basis of the adatom-dimer-interstitial (ADI) model, this result indicates that the Ga atom is adsorbed interstitially at the center of another pentamer that does not have the interstitial Si atom. An ab initio calculation was performed and STM images were simulated.     

Diffusions of small clusters on Pt(1 1 1) and Cu(1 1 1) surfaces

Diffusions of small cluster Pt₆ on Pt(1 1 1) surface and Cu₆ on Cu(1 1 1) are studied by molecular dynamics simulation, respectively. The atomic interaction is modeled by the semiempirical potential. The results show that the diffusion processes in the two systems are far different. For example, on Pt(1 1 1) surface, the hopping of single atom and the shearing of two atoms of hexamer only occur on the adatom(s) adsorbed at B-step, while on Cu(1 1 1) surface they can appear on the adatom(s) either at A-step or B-step. To the concerted translation of the parallelogram hexamer, the anisotropy in the diffusion path is observed in the two systems, the mechanisms and then the preferential paths, however, are completely different. The reasons for these diffusion characteristics and differences are discussed.     

Effect of kink-rounding barriers on step edge fluctuations

The effect that an additional energy barrier E_kr for step adatoms moving around kinks has on equilibrium step edge fluctuations is explored using scaling arguments and kinetic Monte Carlo simulations. When mass transport is through step edge diffusion, the time correlation function of the step fluctuations behaves as C(t)=A(T)t^1/4. At low temperatures the prefactor A(T) shows Arrhenius behavior with an activation energy (E_det+3?)/4 if E_kr<? and (E_det+E_kr+2?)/4 if E_kr>?, where ? is the kink energy and E_det is the barrier for detachment of a step adatom from a kink. We point out that the assumption of an Einstein relation for step edge diffusion has lead to an incorrect interpretation of step fluctuation experiments, and explain why such a relation does not hold. The theory is applied to experimental results on Pt(1 1 1) and Cu(1 0 0).     

Chemisorption of atomic oxygen on Pd(1 1 1) studied by STM

Atomic oxygen resulting from the dissociation of O₂ on Pd(1 1 1) at low coverage was studied in a variable temperature scanning tunneling microscope (STM) in the range from 30 to 210 K. Oxygen atoms, which typically appear as 30-40 pm deep depressions on Pd(1 1 1), occupy fcc hollow sites and form ordered p(2 × 2) islands upon annealing above 180 K. The mobility of the atoms diminishes rapidly below 180 K, with an approximate diffusion barrier of 0.4-0.5 eV. Oxygen atom pairs produced by thermal dissociation of O₂ at 160 K occupy both fcc and hcp hollow sites. The atoms travel approximately 0.25 nm after dissociation, and the distribution of pairs is strongly influenced by the presence of subsurface impurities within the Pd sample. At much lower temperatures, the STM tip can dissociate oxygen molecules. Dissociation occurs at sample bias voltages exceeding approximately 0.1 V. Following tip-induced dissociation, the product atoms occupy only fcc hollow sites. Oxygen atoms can be manipulated via short range repulsive interactions with the STM tip.     

STM observation of initial growth of Sn atoms on Ge(0 0 1) surface

We have studied initial growth of Sn atoms on Ge(0 0 1) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(0 0 1) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the 〈3 1 0〉 and the 〈1 1 0〉 directions, and epitaxial structures. For Sn deposition onto the substrate at 80 K, the population of the dimer chains aligning in the 〈3 1 0〉 direction increases. The diffusion barrier of the Sn adatom on the substrate kinetically determines the population of the dimer chain. We propose that the diffusion barrier height depends on surface strain induced by the adatom. The two kinds of dimer chains appearing on the Ge(0 0 1) and Si(0 0 1) surfaces with adatoms of the group-IV elements are systematically interpreted in terms of the surface strain.     

Gd adsorption on the Mo(2 1 1) surface

The adsorption of Gd thin layers on the Mo(2 1 1) face was investigated by using Auger electron spectroscopy (AES), low electron energy diffraction (LEED), scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS) and measurements of the work function changes (Δφ). It was found that at 300 K Gd does not form any dilute chain structures and from the very beginning of the adsorption process Gd forms a densely packed layer. The dilute p(4 × 1) chain structure was observed by LEED after annealing thin layers (θ < 1 ML) to temperatures above 770 K. STM images confirm the existence of the p(4 × 1) structure islands. The intermixing of the substrate and adsorbate atoms takes place.