IR absorption enhancement for physisorbed methanol on Ag island films deposited on the oxidized and H-terminated Si(111) surfaces: effect of the metal surface morphology

Infrared absorption measurements using a multiple internal reflection geometry are reported for condensed methanol at 90 K on Ag island films deposited on the oxidized and hydrogen-terminated surfaces of Si(111). The attenuated total reflection (ATR) spectra obtained as a function of methanol exposure (up to 14 L) show that a 1-nm mass thickness of Ag island film on the oxidized Si(111) surface yields an absorption intensity 2–3 times larger than the intensity in the absence of Ag on the oxidized surface. Deposition of the same thickness of Ag on the hydrogen-terminated Si(111) surface results in approximately twice the enhancement. The different magnitudes of the enhancement are discussed based on SEM micrographs for Ag island films formed on the oxidized and H-terminated Si(111) surfaces. Received: 1 March 1999 / Accepted: 8 March 1999 / Published online: 5 May 1999     

Acoustic anechoic layers with singly periodic array of scatterers: Computational methods,absorption mechanisms,and optimal design

The acoustic properties of anechoic layers with a singly periodic array of cylindrical scatterers are investigated. A method combined plane wave expansion and finite element analysis is extended for out-of-plane incidence. The reflection characteristics of the anechoic layers with cavities and locally resonant scatterers are discussed. The backing is a steel plate followed by an air half space. Under this approximate zero transmission backing condition, the reflection reduction is induced by the absorption enhancement. The absorption mechanism is explained by the scattering/absorption cross section of the isolated scatterer. Three types of resonant modes which can induce efficient absorption are revealed. Due to the fact that the frequencies of the resonant modes are related to the size of the scatterers, anechoic layers with scatterers of mixed size can broaden the absorption band. A genetic optimization algorithm is adopted to design the anechoic layer with scatterers of mixed size at a desired frequency band from 2 kHz to l0 kHz for normal incidence, and the influence of the incident angle is also discussed.     

Large Positive and Negative Lateral Displacements from Total Internal Reflection Configuration with a Weakly Absorbing Dielectric Film

It is theoretically shown that the simultaneously large positive and negative lateral displacements will appear when the resonant condition is satisfied for a TE-polarized light beam reflected from the total internal reflection configuration with a weakly absorbing dielectric film. Appearance of the enhanced negative lateral displacement is relative to the incidence angle, absorption of the thin film and its thickness. If we select an appropriate weakly absorbing dielectric film and its thickness, the simultaneously enhanced positive and negative lateral displacements will appear at different resonant angles. These phenomena may lead to convenient measurements and interesting applications in optical devices.     

非晶Si/SiO2超晶格结构的交流电致发光

设计并用磁控溅射方法制备了非晶Ｓｉ／ＳｉＯ２超晶格结构,以高纯多晶Ｓｉ为靶材,当以Ａｒ＋Ｏ２为溅射气氛时,得到ＳｉＯ２膜,仅以Ａｒ为气氛时,得到Ｓｉ膜。重复地开和关Ｏ２气,便交替地得到ＳｉＯ２和Ｓｉ膜。衬底在靶前往返平移,改变平移的速度或者改变溅射的功率,可以控制膜的厚度。通过透民镜的照片可以看出ＳｉＯ２和Ｓｉ膜具有均匀的周期结构,用低角Ｘ－射线反射谱表征了超晶格的周期结构和各层的厚度。透射光谱表     

Tunneling of X-ray photons through a thin film under total internal reflection conditions

Tunneling of 0.154-and 0.139-nm x-ray photons through a thin film under total internal reflection conditions has been experimentally demonstrated. The NiSi₂ film 13 nm thick is deposited by magnetron sputtering on a polished Si substrate. A beam with an angular spread of 20″ is directed to the Si/NiSi₂ interface from the inside through the lateral surface of a sample. A peak associated with tunneling of photons from Si to air through the NiSi₂ film is observed at grazing angles of θ₁ > 0.4θ_c, where θ_c is the critical angle of total internal reflection at the Si/NiSi₂ interface. The integral intensity of tunneling peaks that is measured for various θ₁ angles agrees with the calculations.     

Resonant soft x-ray scattering from stepped surfaces of SrTiO3

We studied the resonant diffraction signal from stepped surfaces of SrTiO(3) at the Ti 2p → 3d (L(2,3)) resonance in comparison with x-ray absorption (XAS) and specular reflectivity data. The steps on the surface form an artificial superstructure suitable as a model system for resonant soft x-ray diffraction. A small step density on the surface is sufficient to produce a well defined diffraction peak. We determined the optical parameters of the sample across the resonance and found that the differences between the energy dependence of the x-ray absorption signal, the specular reflectivity and the step-related peak reflect the different quantities probed in these signals. When recorded at low incidence or detection angles, XAS and specular reflectivity spectra are strongly distorted by the changes of the angle of total reflection with energy. The resonant diffraction spectrum is less affected and can be used as a spectroscopic probe even in less favorable geometries.     

自支撑Zr膜制备及软X射线透过性能研究

软X射线波段滤光膜材料大都为自支撑金属薄膜,实验室环境下自支撑薄膜长期与空气接触表面易氧化,空气中的杂质原子进入自支撑薄膜内部,致使自支撑膜光学性能大幅下降.5 nm至20 nm软X射线波段Zr具有较低的质量吸收系数和较小的密度,在该波段Zr滤光膜透过率较高.采用脱模剂法制备自支撑Zr膜,在洁净的浮法玻璃上蒸镀一层Na...     

IR spectroscopy of adsorbed dinitrogen: a sensitive probe of defect sites on Pt(111)

Fourier transform infrared reflection absorption spectroscopy (FT-IRAS) has been used to probe the non-dissociative adsorption of N₂ on an atomically clean Pt(111) single crystal. In contradiction to a previous IRAS study of nitrogen adsorption on a Pt(111) foil at 120 K, no nitrogen infrared (IR) band was observed on a fully annealed Pt(111) surface at 90 K. Following Ar⁺ ion bombardment, adsorption of nitrogen at 90 K produces an intense IR band at 2222 cm⁻¹ attributed to the N---N stretching mode of molecular nitrogen adsorbed on defect sites produced by ion bombardment. Annealing the Ar⁺ ion sputtered surface to a temperature above 750 K completely suppresses the adsorption of nitrogen at 90 K. Based on these and other results, we postulate that nitrogen adsorbs at 90 K mainly on monovacancies on platinum. We suggest that this specific adsorption occurs by sigma donation from nitrogen to the base of monovacancy sites which possess a low d-electron density compared to surface Pt atoms.     

Distortions in IR spectra related to the registration conditions: I. The influence of the reflection from interfaces

We show that the contour of an absorption band of a thin layer of a liquid or a film of a solid compound deposited onto a substrate can be strongly distorted as a result of the reflection from the specimen surface or the interface with the substrate if the refractive index of the compound under study changes sharply in the range of the absorption band. We consider the theory of this phenomenon and ways of taking it into account in studies of the absorption spectra of films, liquids, and adsorbed molecules.     

Enhancement of the IR absorption of a thin film on gold in the Otto ATR configuration

The enhancement infrared absorption of a thin KSCN film formed on a smooth gold surface has been observed in the Otto ATR prism configuration. The absorption intensity reaches the maximum at an incident angle slightly lower than the critical angle for total internal reflection at the prism/air interface, and the intensity attains to large values at sizable prism-metal distances. These facts clearly indicate that the enhancement does not arise from the excitation of a surface plasmon polariton. Theoretical calculations of the electromagnetic field strength in the prism-metal gap show that the enhancement comes from the optical cavity effect.     

Fe3O4 nanoparticle loaded paclitaxel induce multiple myeloma apoptosis by cell cycle arrest and increase cleavage of caspases in vitro

We experimentally and theoretically characterize back-scattering and extinction of Ag nanoparticle (AgNP) arrays on both Si wafer substrates and optically-thick Ag substrates with and without organic poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM) bulk-heterojunction thin film coatings. A strong red-shift in back-scattered light wavelength occurs from AgNP arrays on Si as a function of increasing mean nanoparticle diameter (ranging from 30 to 90 nm). Back-scattering from the AgNP array is notably quenched in the wavelength range of strong P3HT absorption when the organic layer is applied. However, back-scattering is enhanced to a degree relative to the uncoated AgNP array on Si at wavelengths greater than the absorption band edge of P3HT. For comparison, the optical properties of AgNPs on an optically-thick Ag substrate are reported with and without P3HT:PCBM thin film coatings. On the reflective Ag substrates, a significant enhancement (by a factor of 7.5) and red-shift of back-scattered light occurred upon coating of the AgNPs with the P3HT:PCBM layer. Additionally, red-edge extinction was enhanced in the P3HT:PCBM layer with the presence of the AgNPs compared to the planar case. Theoretical electromagnetic simulations were carried out to help validate and explain the scattering and extinction changes observed in experiment. Both increasing nanoparticle size and an increasing degree of contact with the Si substrate (i.e., effective index of the nanoparticle environment) are shown to play a role in increasing back- and forward-scattering intensity and wavelength, and in increasing absorption enhancements in both the organic and Si layers. AgNPs placed at the P3HT:PCBM/Si interface give rise to absorption increases in P3HT of up to 18 %, and only enhance Si absorption at wavelengths longer than the absorption band edge of P3HT (by almost 90 % in the 660–1,200 nm wavelength range). These results provide insight into how metal nanoparticles placed near an organic/inorganic interface can be employed for light management in tandem or hybrid organic/inorganic thin-film semiconductor configurations for solar energy harvesting applications or light detection applications.     

Two-step sputtered ZnO piezoelectric films for film bulk acoustic resonators

This study investigates high-performance ZnO piezoelectric films used for thin film bulk acoustic resonators (TFBAR). The ZnO piezoelectric film was deposited on a Pt/Ti electrode using an RF magnetron sputter by a two-step method at room temperature. The Pt/Ti electrode was deposited by a DC sputtering system, on which, ZnO piezoelectric films were deposited in one step and in two steps to minimize roughness in the first step and produce the preferred orientation in the second. Both field-emission scanning electron microscopy (FESEM) and atom force microscopy (AFM) revealed that ZnO piezoelectric film deposited by two-step sputtering exhibited favorable characteristics, such as a rigidly precise surface structure with surface roughness of 7.37 nm, even better than in one-step sputtering. Examining the ZnO thin film by X-ray diffraction (XRD) showed a much higher c-axis-preferring orientation than in one-step sputtering. The reflection coefficient of the resonator device was measured using an HP8720 network analyzer. The frequency response of the FBAR device exhibited a return loss of -25 dB at a resonant frequency of 2212 MHz with a high coupling coefficient of 6.7%. PACS 68.55.Jk; 43.35.Ns; 81.15.-z     

均匀磁化等离子体与雷达波相互作用的数值分析

采用平板几何对不同磁场强度下等离子体对电磁波的吸收、反射和透射特性进行了数值分析.结果表明,不同磁场可以显著改变等离子体对不同频率的雷达波的吸收和反射特性.当雷达波频率接近等离子体高混杂频率时,磁化等离子体将对该波产生强的共振吸收,带宽在2GHz左右,吸收比可达90%以上.因此,通过适当调整磁场强度、等离子体密度和碰撞频率,可实现较宽雷达波段的等离子体隐身 关键词： 电磁波 磁化等离子体 共振吸收 等离子体隐身     

High energy electron diffraction at Si(001) surfaces

Elastic scattering of 10 keV electrons at Si(001) surfaces at grazing incidence was investigated. The intensity of the specularly reflected elastically scattered electrons as a function of the angle of incidence I_el(γ) was measured for different azimuthal angles and was compared with calculations using the dynamical diffraction theory. It turned out that the contribution of the elastically scattered electrons to the total intensity of the reflections strongly decreases with decreasing angle of incidence. Exciting the reflection (008) the elastic contribution is around 30%, decreasing to about 12% in the case of the reflection (004). In the calculations multiple beam effects, absorption, a smooth variation of the potential at the surface and a reduction of the topmost interlayer spacing were taken into account. There is satisfactory agreement between the structures of experimental and calculated intensity curves, I_el(γ) indicating a slight compression of the surface lattice to be probable. Quantitative agreement, however, for absolute intensities was not obtained.     

Second-harmonic interferometric spectroscopy of buried interfaces of column IV semiconductors

The technique of combined optical second-harmonic (SH) intensity and phase spectroscopy, which is the spectroscopic modification of SH phase measurements, is proposed to study the nonlinear optical response of semiconductor interfaces with spectrally close resonant contributions. The spectral dependences of SH intensity and phase from oxidised Si (111) and Ge (111) surfaces are studied in the range of 3.5- to 5-eV SH photon energy. The resonant behaviour of combined SH spectra is associated with a superposition of contributions from direct interband transitions at several critical points of Si and Ge band structures. Received: 16 October 2001 / Revised version: 16 April 2002 / Published online: 6 June 2002     

Numerical analysis of the reflection and absorption of electromagnetic wave in nonuniform magnetized plasma slab

In this paper, a model for calculating the reflection and absorption powers of electromagnetic wave (EM wave) in nonuniform magnetized plasma slab is given out based on layer propagation theory. The effects of various plasma parameters and different values of magnetic field intensity on the reflected and absorbed powers are discussed. The results illustrate that the thickness of plasma seldom affects the reflection of radar wave, but it can broaden or reduce the absorption width. Meanwhile, the background magnetic field intensity has an influence upon the results, and it could change the resonance spectrum of magnetized plasma. We also find out that, with appropriate plasma density, collision frequency and magnetic field intensity, more than 90% of radar wave power can be absorbed and the resonant absorption band is about 2 GHz.     

Reversible adsorption of Au nanoparticles on SiO2/Si: An in situ ATR-IR study

Adsorption and desorption of Au nanoparticles (AuNP) on the (aminopropyl)triethoxysilane (APTES) treated SiO₂/Si surface was monitored by in situ attenuated total reflection (ATR) infrared spectroscopy in combination with a liquid flow cell. With increasing the AuNP coverage at the surface, the absorption by water vibration was increased due to surface enhanced infrared absorption (SEIRA). Repulsive electrostatic forces between the incoming AuNP and the already adsorbed AuNP layer lead to saturation at submonolayer coverage of the surface. We clarified that the adsorption process can be described very well by a diffusion limited first-order Langmuir-kinetics model. Furthermore, we show that the AuNPs desorb from the surface when they are exposed to the solution of aminoethanethiol (AET).     

High transmission with narrow bandwidth of metallic defect mode in 1-D dielectric photonic crystals

Enhanced transmission peaks can be obtained in a dielectric photonic crystal with metal film defect. These peaks occur only in the band gaps, and their heights decrease sharply when they deviate from the band gaps. Theoretical analysis shows that, since the metal film defect mode possesses very high density of mode, high transmission of light in particular band can be achieved even by a metal “block” while high absorption of the light in other bands still exists. The physical mechanism of this phenomenon is essentially different from the resonant tunneling effect of layered metallic films. Since metal has high reflection and strong absorption of the light wave without being enhanced, so, basing on this mechanism, a narrow bandwidth filter with high transmission in UV range and suppression in while the visible, infrared, and even microwave range can be achieved.     

固/液界面原位红外显微镜和步进扫描时间分辨FTIR反射光谱及其在纳米材料科学中的应用

结合红外显微镜和步进扫描FTIR光谱仪 ,发展了固 /液界面电化学原位显微镜红外反射光谱和步进扫描快速时间分辨FTIR反射光谱 ,并应用于纳米材料特殊性能和电化学反应动力学的研究。研制纳米结构Pt微电极 ,获得CO吸附的红外特征随纳米结构和纳米尺度变化的原位显微镜红外谱图。利用纳米结构Pt微电极的异常红外效应 ,显著提高电化学原位红外反射光谱的灵敏度 ,获得分辨率达 5 0 μs的步进扫描时间分辨光谱。不仅发展了固 /液界面显微镜原位红外反射光谱新方法 ,并且拓展了电化学原位红外反射光谱在纳米材料科学研究中的应用。     

非晶Si/SiO2超晶格结构的交流电致发光

设计并用磁控溅射方法制备了非晶Si/SiO