Quantification of antimony depth profiles in Sb-doped tin dioxide thin films

Sb-doped SnO(2) thin films, deposited by atomic layer epitaxy (ALE) for gas sensor applications, have been characterized by secondary ion mass spectrometry (SIMS). Quantification of the depth profile data has been carried out by preparing a series of ion implanted standards. Average concentrations determined by SIMS have been compared with Sb/Sn ratios obtained by X-ray fluorescence (XRF) spectrometry and proton induced X-ray emission (PIXE) spectrometry and have been found to be in good agreement. However, a detection limit of 5x10(18) at cm(-3) could only be obtained because of mass interferences. SIMS data show that the ALE technique can be used to produce a controllable growth and doping of thin films.     

Analysis of Antimony Doping in Tin Oxide Thin Films Obtained by the Sol-Gel Method

The antimony doping in SnO₂ thin films prepared by the sol-gel dip-coating method has been studied using two characterization techniques. In order to determine the actual doping level directly in the deposited layers, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) have been used. We found that this doping level is systematically lower than expected from the starting solutions composition, and that two oxidation states are present: Sb³⁺ and Sb⁵⁺. As the antimony content increases, there is a competition between Sb⁵⁺ and Sb³⁺ species.The SnO₂: Sb thin films have also been observed by transmission electron microscopy (TEM), showing that the measured mean size of crystallites decreases as the Sb content increases in the oxide. No precipitates of either Sn or Sb oxides (other than SnO₂) could be detected.     

Investigation of polymer thin films by use of Bi-cluster-ion-supported time of flight secondary ion mass spectrometry

The investigation and analysis of polymer thin films with Bi _n ⁺, n = 1–7 cluster ions has been demonstrated by means of static secondary ion mass spectrometry (SIMS). The highly specific signal enhancement of these primary ions combined with the individual fragmentation pattern of poly(4-vinylphenol) and poly(methyl methacrylate) is the basic principle for a modified approach of data reduction derived from the well-established g-SIMS procedure. Based on mass spectra, which correspond to different cluster ion sizes, not only a clear distinction between the two polymers is feasible but also a further simplification of the data can be demonstrated. It has been successfully proven that characteristic polymer-relevant species can be refined out of the large amount of unspecific and highly fragmented secondary ions, which are usually present in SIMS spectra. Therefore, a more precise and direct interpretation of complex organic fragments becomes feasible, which consequently enables the investigation of even more sophisticated samples.     

Determination of Ca, P, Sr and Mg in the synthetic biomaterial aragonite by NAA

Implanted ⁷⁴Ge and ¹²⁰Sn concentrations in silicon (Si) layers were investigated by particle induced X-ray emission (PIXE), instrumental neutron activation analysis (INAA), Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). Slight differences were observed in the results obtained. It was shown that PIXE and INAA are as powerful as the traditional RBS and SIMS spectroscopy for the investigation of thin layered Si.This revised version was published online in November 2005 with corrections to the Cover Date.     

Molecular adsorption and the chemistry of plasma-deposited thin organic films: Deposition of oligomers of ethylene glycol

Weakly ionized, radio-frequency, glow-discharge plasmas formed from methyl ether or the vapors of a series of dimethyl oligo(ethylene glycol) precursors (general formula: H-(CH₂OCH₂)_n-H;n=1 to 4) were used to deposit organic thin films on polytetrafluoroethylene. X-ray photoelecton spectroscopy (XPS) and static secondary ion mass spectrometry (SIMS) of the thin films were used to infer the importance of adsorption of molecular species from the plasma onto the surface of the growing, organic film during deposition. Films were prepared by plasma deposition of each precursor at similar deposition conditions (i.e., equal plasma power (W), precursor flow rate (F), and deposition duration), and at conditions such that the specific energy (energy/mass) of the discharge (assumed to be constrained byW/FM, whereM=molecular weight of the precursor) was constant. At constantW/FM conditions, two levels of plasma power (and, hence, twoFM levels) and three substrate temperatures were examined. By controlling the energy of the discharge (W/FM) and the substrate temperature, these experiments enabled the study of effects of the size and the vapor pressure of the precursor on the film chemistry. The atomic % of oxygen in the film surface, estimated by XPS, and the intensity of theC-O peak in the XPS C_ls spectra of the films, were used as indicators of the degree of incorporation of precursor moieties into the plasma-deposited films. Analysis of films by SIMS suggested that these two measures obtained from XPS were good indicators of the degree of retention in the deposited films of functional groups from the precursors. The XPS and SIMS data suggest that adsorption of intact precursor molecules or fragments of precursor molecules during deposition can have a significant effect on film chemistry. Plasma deposition of low vapor pressure precursors provides a convenient way of producing thin films with predictable chemistry and a high level of retention of functional groups from the precursor.     

Characterization of a Robust CoII Fluorescent Complex Deposited Intact On HOPG

The new diimine fluorescent ligand ACRI‐1 based on a central acridine yellow core is reported along with its coordination complex [Co₂( ACRI‐1 )₂] ( 1 ), a fluorescent weak ferromagnet. Due to the strong fluorescence of the acridine yellow fluorophore, it is not completely quenched when the ligand is coordinated to Co^II. The magnetic properties of bulk complex 1 and its stability in solution have been studied. Complex 1 has been deposited on highly ordered pyrolitic graphite (HOGP) from solution. The thin films prepared have been characterized by AFM, time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS), grazing incidence X‐ray diffraction (GIXRD), X‐ray absorption spectroscopy (XAS), X‐ray magnetic circular dichroism (XMCD) and theoretical calculations. The data show that the complex is robust and remains intact on the surface of graphite.     

Enhanced surface sensitivity in secondary ion mass spectrometric analysis of organic thin films using size‐selected Ar gas‐cluster ion projectiles

A size‐selected argon (Ar) gas‐cluster ion beam (GCIB) was applied to the secondary ion mass spectrometry (SIMS) of a 1,4‐didodecylbenzene (DDB) thin film. The samples were also analyzed by SIMS using an atomic Ar⁺ ion projectile and X‐ray photoelectron spectroscopy (XPS). Compared with those in the atomic‐Ar⁺ SIMS spectrum, the fragment species, including siloxane contaminants present on the sample surface, were enhanced several hundred times in the Ar gas‐cluster SIMS spectrum. XPS spectra during beam irradiation indicate that the Ar GCIB sputters contaminants on the surface more effectively than the atomic Ar⁺ ion beam. These results indicate that a large gas‐cluster projectile can sputter a much shallower volume of organic material than small projectiles, resulting in an extremely surface‐sensitive analysis of organic thin films. Copyright © 2010 John Wiley & Sons, Ltd.     

Sol–gel synthesis of Zn-thiourea-SiO2 thin films from (EtO)3Si(CH2)3NHC(S)NHPh as molecular precursor

In order to study new and convenient sol–gel syntheses to homogeneous nanocomposites systems based on zinc sulphide clusters embedded in films of silica glass, a thiourea-functionalized silane ((EtO)₃Si(CH₂)₃NHC(S)NHPh, SilTu) was investigated as starting precursor. Electrospray ionization mass spectrometry (ESI-MS), FT-IR and NMR spectroscopies clearly evidence that SilTu coordinates Zn²⁺ ions in solution through the thiourea function. Both zinc acetate (Zn(CH₃COO)₂) and zinc chloride (ZnCl₂) were used as zinc source. The SilTuZn²⁺ complex is also stable under sol–gel conditions. Alcoholic solutions of SilTu, zinc acetate and tetraethoxysilane Si(OEt)₄ (TEOS) were used to prepare the thin films by dip-coating. Transparent, homogeneous and crack-free layers were obtained under annealing up to 600 °C. The samples were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Beside ZnS formation, the presence of oxygenated zinc species was observed inside the silica matrix.     

Quantitative SIMS-analysis of erbium profiles in LiNbO3

Modern fiberoptic communication technology uses light of 1.5 μm wavelength and Er³⁺ is the laser active ion for this wavelength. Doping of crystalline LiNbO₃ (an electrooptical material) with erbium ions permits the fabrication of signal-amplifying electrooptic devices. Novel results of three different approaches have been presented to dope the near surface area of LiNbO₃ for its application in planar optoelectronics: erbium indiffusion from the surface, implantation of erbium into LiNbO₃ and subsequent annealing schemes, and the homoepitaxial growth of Er-doped LiNbO₃ on LiNbO₃ single crystalline material by a laser deposition method. These experiments are not only useful for creating integrated optical devices with active amplifying functions, but they are also important examples for fabricating and studying novel thin ferroelectric films. Secondary ion mass spectrometry (SIMS) has been employed as the main analytical tool for quantitative determination of the erbium concentration profiles.     

The issue of pseudoreplication when applying a statistical exploratory approach to extract relevant features from ToF‐SIMS spectra

The issue of automated peak selection in time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) spectra is examined in relation to the hierarchical nature of the experimental design and the related existence of observations which are not statistically independent. To avoid unreliable results, the presence of pseudoreplication should be taken into account correctly. A combination of the recommended univariate peak selection approach with some multivariate techniques, namely principal component analysis and heat map data representation, is proposed to highlight and analyze obtained results for a set of ToF‐SIMS spectra from copper phthalocyanine thin films grown on TiO₂ substrates by a supersonic beam deposition apparatus. New insight is obtained on the effectiveness of the deposition for different working parameters of the process. Copyright © 2013 John Wiley & Sons, Ltd.     

Time‐of‐flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate

Silicon oxynitride has been used as a shallow gate oxide material for microelectronics and its thickness has been reduced over the years to only a few tens of angstroms due to device size scaling. The nitride distribution and density characteristic in the gate oxide thus becomes imperative for the devices. The shallow depth profiling capability using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) has huge potential for the nitrogen characterization of the shallow gate oxide film. In this article, both positive and negative spectra of TOF‐SIMS on silicon oxynitride have been extensively studied and it was found that the silicon nitride clusters Si_xN^? (x = 1–4) are able to represent the nitrogen profiles because their ion yields are high enough, especially for the low‐level nitride doping in the oxide, which is formed by the annealing of nitric oxide on SiO₂/Si. The gate oxide thickness measured by the TOF‐SIMS profiling method using ¹⁸O or CsO profile calibration was found to correlate very well with transmission electron microscope measurement. The nitrogen concentration in the gate oxide measured using the TOF‐SIMS method was consistent with the results obtained using the dynamic SIMS method, which is currently applied to relatively thicker oxynitride films. Copyright © 2012 John Wiley & Sons, Ltd.     

A secondary ion mass spectrometric study of thallium oxide thin films grown via metal organic chemical vapour deposition

Within a comprehensive programme including synthesis via metal organic chemical vapour deposition (MOCVD) and characterization of inorganic compounds and materials of possible interest in technologies based on thin films, results concerning the deposition of metal oxides by means of volatile organometal precursors are reported. In particular, thallium oxide films obtained by the MOCVD technique and commercial powders of Tl₂O₃ and Tl₂O adsorbed on several metal substrates (stainless steel, Si, Cu, Mo, Pt) were studied by secondary ion mass Spectrometry (SIMS) under ion beam bombardment at different ion energies. The positive- and negative-ion mass spectra exhibit typical isotopic patterns of several ionic species produced by interesting interfacial reactions, and the analysis of their relative abundances provides a measure of oxide reactivity towards different substrates. SIMS measurements of metal substrates were also performed. The ability and limits of SIMS in the reactivity study of thallium oxide powders and films and, in addition, in the identification of reaction products evidencing impurity species that, in turn, can be ascribed to the substrates or to the precursors used for the oxide synthesis is pointed out.     

Sputtering induced recombination of nitrogen isotopes on tungsten

Adsorbed isotopic mixtures of ¹⁴N₂ and ¹⁵N₂ at low coverages on polycrystalline tungsten have been used as model systems for studying sputtering induced recombination during secondary ion mass spectrometry (SIMS). Earlier studies have shown that N₂ is completely dissociated on a W surface at low coverage. Thermal desorption spectroscopy (TDS) has been employed here to confirm this fact; our results show that complete isotopic mixing occurs. Adsorbed nitrogen can be sputtered as both atoms and molecules and sputtering induced recombination of adsorbate atoms increases as primary ion energy increases. Sputtering induced recombination is detected through isotopic mixing in SIMS. The data show that the dominant mechanism for sputtering of dimers (N₂) is not direct emission from the surface but rather a sputtering induced recombination mechanism.     

Construction and Characterization of Ru(II)Tris(bipyridine)‐Based Silica Thin Film Electrochemiluminescent Sensors

Ru(II) tris‐bipyridine based ECL sensors were produced by embedding the complex inside silica glass thin films deposited via a sol‐gel dipping procedure on K‐glass conducing substrates. Films were prepared starting from a pre‐hydrolyzed ethanolic solution of Si(OC₂H₅)₄ and Ru(bpy)₃Cl₂. Transparent, crack‐free and homogeneous reddish silica layers, having a thickness of 200±20 nm, were obtained. The films, either deposited at room temperature or thermally annealed at 100, 200 and 300 °C for 30 h, were structurally and chemically characterized. Ru(bpy)₃Cl₂ thermal stability was previously checked by thermogravimetric analysis (TGA). The films were investigated by X‐Ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and UV‐vis spectroscopy. XPS in‐depth profiles revealed a homogeneous distribution of the ruthenium complex inside the silica thin layers. SIMS data suggested that the embedded Ru(bpy)₃Cl₂ did not react with oxygen inside the oxygen‐rich silica matrix to give Ru‐O bonds. Electrochemical and ECL characterization of the thin film electrodes were made by means of cyclic voltammetry (CV) and controlled potential step experiments. The ECL sensor showed a diffusive redox behavior of the Ru(bpy)₃²⁺/Ru(bpy)₃³⁺ system. Light emission produced from the reaction between oxalic acid and the electrogenerated Ru(bpy)₃³⁺ was larger and stable when thermally treated electrodes were used after a suitable hydration period. The 300 °C treated sample was the best performing sensor both in terms of low complex leakage and sensitivity. Calibration plots relative to oxalic acid were obtained both in stationary and in flowing solutions in the concentration range 2×10^?6?3×10^?4 M. A linear behavior appeared in the former case, while in the latter a slight curvature was evident as a consequence of a finite diffusion time of the analyte inside the thin film. The signal repeatability, obtained by multiple 100 μL of 10^?5 M oxalic acid injections in flowing solutions, was better than 4%. The obtained detection limit (computed as three times the standard deviation of the base‐line noise) was 10^?6 M as oxalic acid.     

Static secondary ion mass spectrometry of organic plasma-deposited films created from stable isotope-labeled precursors. II. Mixtures of acetone and oxygen

A series of plasma-deposited films (PDFs), created by blending controlled ratios of acetone vapor and oxygen in the feed to the plasma reactor, were analyzed by static secondary ion mass spectrometry (SIMS). Examination of the quadrupole-based static SIMS fragmentation patterns of acetone–O₂ PDFs created from ¹³C-labeled acetone generally allowed the hydrocarbon secondary ions to be distinguished from oxygen-containing secondary ions. These results were compared with those obtained via high-mass resolution time-of-flight (TOF)-SIMS. The identified secondary ions were then assigned structural attributes, based on comparison of the static SIMS spectra of the acetone–O₂ PDFs with those of conventional hydrocarbon and oxygen-containing polymers. A preliminary investigation to unravel the mechanism of oxygen incorporation in the acetone–O₂ PDFs from the two plasma feed components was undertaken through the analysis of PDFs created from 1,2,3¹³C₃-acetone(¹⁶O) vapor and ¹⁸O₂ gas.     

Time of flight secondary ion mass spectrometric determination of molecular weight distributions of low polydispersity poly(dimethyl siloxane) with polyatomic primary ions

This work reports a comparison of oligomer and fragment ion intensities resulting from primary ion bombardment with several primary ion sources (Bi_n⁺, C₆₀⁺, and Cs⁺) at various energies in secondary ion mass spectrometry (SIMS). Although the use of polyatomic primary ions are of great interest due to increased secondary ion efficiency and yield, we demonstrate that monatomic primary ions result in increased oligomer ion yield for polymers prepared as submonolayer films on silver substrates. The enhancement of oligomer secondary ion yield with monatomic ions is evidence that monatomic primary ions have a shallower sampling depth than polyatomic ions, resulting from a collision cascade that is less energetic at the sample surface. The results are also consistent with a lower degree of fragmentation of the resultant secondary ions, which is observed when evaluating the fragmentation data and the spectral data.     

A novel isotope analysis of oxygen in uranium oxides: comparison of secondary ion mass spectrometry,glow discharge mass spectrometry and thermal ionization mass spectrometry

The natural variation of the oxygen isotopic composition is used among geologists to determine paleotemperatures and the origin of minerals. In recent studies, oxygen isotopic composition has been recognized as a possible tool for identification of the origin of seized uranium oxides in nuclear forensic science. In the last 10 years, great effort has been made to develop new direct and accurate n(¹⁸O)/n(¹⁶O) measurements methods. Traditionally, n(¹⁸O)/n(¹⁶O) analyses are performed by gas mass spectrometry. In this work, a novel oxygen isotope analysis by thermal ionization mass spectrometry (TIMS), using metal oxide ion species (UO⁺), is compared to the direct methods: glow discharge mass spectrometry (GDMS) and secondary ion mass spectrometry (SIMS). Because of the possible application of the n(¹⁸O)/n(¹⁶O) ratio in nuclear forensics science, the samples were solid, pure UO₂ or U₃O₈ particles. The precision achieved using TIMS analysis was 0.04%, which is similar or even better than the one obtained using the SIMS technique (0.05%), and clearly better if compared to that of GDMS (0.5%). The samples used by TIMS are micrograms in size. The suitability of TIMS as a n(¹⁸O)/n(¹⁶O) measurement method is verified by SIMS measurements. In addition, TIMS results have been confirmed by characterizing the n(¹⁸O)/n(¹⁶O) ratio of UO₂ sample also by the traditional method of static vacuum mass spectrometry at the University of Chicago.     

Untersuchungen tribologischer Schichten mit SIMS

Summary Sputter-deposited MoS₂ films show excellent lubrication properties. Nevertheless, the film-substrate adherence is unsufficient and could not be improved by depositing interface layers. With the method of ion beam mixing by using argon and nitrogen beams of up to 400 keV energy a considerable enhancement of the endurance life was observed. Secondary ion mass spectrometry (SIMS) has been used to examine layers of 0.5 m thickness. Variation of the ion species, dose and energy have been used for optimum endurance life. The results of tribological measurements compared to SIMS depth profiles are demonstrated and discussed.     

Quantitative SIMS-analysis of erbium profiles in LiNbO3

Modern fiberoptic communication technology uses light of 1.5 m wavelength and Er³⁺ is the laser active ion for this wavelength. Doping of crystalline LiNbO₃ (an electrooptical material) with erbium ions permits the fabrication of signal-amplifying electrooptic devices. Novel results of three different approaches have been presented to dope the near surface area of LiNbO₃ for its application in planar optoelectronics: erbium indiffusion from the surface, implantation of erbium into LiNbO₃ and subsequent annealing schemes, and the homoepitaxial growth of Er-doped LiNbO₃ on LiNbO₃ single crystalline material by a laser deposition method. These experiments are not only useful for creating integrated optical devices with active amplifying functions, but they are also important examples for fabricating and studying novel thin ferroelectric films. Secondary ion mass spectrometry (SIMS) has been employed as the main analytical tool for quantitative determination of the erbium concentration profiles.     

AIB induced chemical reactions at surfaces detected by SIMS

Secondary ion mass spectrometry (SIMS) has been used to detect the reactions induced by active ion bombardment (AIB) of N⁺₂ on surfaces of pyrolytic graphite and a (100) Si crystal. The SIMS spectra exhibit ions of CN^?, HCN^?, H_nC₂N^?(n = 2, 3, 4), HN^?, and SiN^?, indicating that reactions take place with the graphite and silicon as well as adsorbed hydrogen on the surfaces.