用Re/Al_2O_3/Al隧道结的电子隧道测定重掺杂Re膜的超导能隙

用Re/Al_2O_3/Al隧道结的电子隧道测定了重掺杂Re膜的超导能隙,△_0=(1.04±0.02)meV,2△_0/kT_c=3.31±0.04。△_0值是用电导极大值法确定的。结果表明,杂质使Re膜的T_c与能隙△_0增加了许多倍,但是Re仍然属于弱耦合超导体。     

一级磁结构相变材料Mn0.6Fe0.4NiSi0.5Ge0.5和Ni50Mn34Co2Sn14的磁热效应与磁场的线性相关性

磁熵变（△S_M）与磁场（μ₀H）的相关性已在很多二级相变材料中被研究并报道,但一级相变材料的磁热效应与磁场相关性还少有报道.本文在具有一级磁结构相变的Mn_0.6Fe_0.4NiSi_0.5Ge_0.5材料中研究发现△S_M与μ₀H存在线性相关性,并通过麦克斯韦关系式的数值分析详细讨论了这一线性相关性的来源.同时,进一步发现在低磁场时,△S_M近似正比于μ₀H的平方.该线性相关性同样在一级磁结构相变Ni₅₀Mn₃₄Co₂Sn₁₄材料中得到了印证.但由于一级磁弹相变LaFe_11.7Si_1.3材料相变温度具有更强的磁场依赖性,不具有△S_M的线性相关性,因此,本研究表明,当磁结构相变材料的相变温度具有弱磁场依赖性时,△S_M与μ₀H具有线性相关性.进而,在磁场未达到相变饱和磁场以下,利用△S_M与μ₀H的线性相关性可以有效推测更高磁场下的△S_M.     

非晶态超导体的能隙和霍耳系数之间的经验关系

在大量的非过渡金属和合金中,非晶态超导体的能隙2△₀与霍耳系数R_H以及与相应的液态金属霍耳系数R_HL之间存在着一个经验关系:在R_H(或R_HL)=-3.5—-4.0×10^-11m³/AS之间出现一个2△₀最大值。 关键词：     

非晶态超导体的2△0/(kBTc)和声子谱参量

提出了能够很好地描述非过渡金属无序和非晶态超导体的2Δ₀/(k_BT_c)与声子谱参量之间关系的一个公式:2Δ₀(k_BT_c=4.95[1-(T₀<ω>^1/2)/A(1/(λω₀)+1/(20λ<ω>)+1/(20<ω>))]。计算了大量已知声子谱的非晶和无序超导体的能隙2Δ₀对T_c的比,结果表明在百分之几的范围内与实验值符合。指出了非过渡金属和合金的非晶态超导体,既可以是一个2Δ₀/(k_BT_c)值远大于BCS理论值(3.53)的强耦合超导体,也可以是一个2Δ₀/(k_BT_c)值比BCS理论值还要小得多的弱耦合超导体。 关键词：     

(BiFeO3)25/(La0.7Sr0.3MnO3)25 多层膜的光学和电学性质

采用射频磁控溅射方法在(001)SrTiO₃衬底上制备(001)取向的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜.光学测试结果表明,1.3-2.1 eV范围内,相对于衬底而言多层膜光吸收增强; BiFeO₃的带隙为2.7 eV. 另外,结合绝缘介质导电模型分析了所测得的电流-电压数据,在所测试的温度及电压下,所制备的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜的导电机理由空间电荷限制电导主导. 关键词： 多层膜 吸光度 空间电荷限制电导     

Si中S0对、Se0对和Te0对的电子结构

利用紧束缚近似下的格林函数方法,讨论了Si中(S⁰)₂,(Se⁰)₂及(Te⁰)₂基态的能级和波函数。分析了几种不同的观点。(S⁰)₂,(Se⁰)₂及(Te⁰)₂均在禁带中引入一个对称性的A_1g能级和一个反对称性的A_2u能级,二者都是填满的。现有实验观测到的是较高的A_1g能级。从理论上指出了对称性的A_1g能级反而高于反对称性的能级的原因。而Si中(Se₂)⁺的g因子测量值和(S₂)⁺,(Se₂)⁺的ESR实验结果也支持本文的观点。 关键词：     

CH2Br2的同步辐射光电离研究:10—12eV范围内CH2Br2的振动自电离态

报道在超声射流冷却条件下用同步辐射ＶＵＶ光源研究ＣＨ₂Ｂｒ₂的振动自电离结构．根据测量的１０５—１２３ｎｍ范围内母体离子（ＣＨ₂Ｂｒ₂⁺）的光电离产率曲线，获得ＣＨ₂Ｂｒ₂的绝热电离势为１０.２３±０.０１ｅＶ．ＣＨ₂Ｂｒ₂⁺的最低三个电子激发态，即Ａ（²Ａ₂），Ｂ（²Ｂ₁），Ｃ（²Ａ₁）分别位于１０.７８±０.０１ｅＶ，１１.２０±０.０１ｅＶ和１１.２７±０.０１ｅＶ．在１１５.０１—１２１.１５ｎｍ范围内，观察到ＣＨ₂Ｂｒ₂自电离峰叠加在若干台阶结构上，台阶平均宽度为７１６.８±４０.０ｃｍ^-1，对应于ＣＨ₂Ｂｒ₂⁺（Ｘ²Ｂ₂）中Ｂｒ-Ｃ-Ｂｒ反对称的伸缩振动（ｖ₉），所有的峰均归属为收敛于ＣＨ₂Ｂｒ₂⁺（Ｘ²Ｂ₂，ｖ⁺）振动能级的ｎｓ，ｎｐ和ｎｄ自电离Ｒｙｄｂｅｒｇ态．此外，对ＣＨ₂Ｂｒ₂光解离电离产生离子型自由基ＣＨ₂Ｂｒ⁺（Ｘ）的光电离产率曲线的结构也进行了归属 关键词：     

形变超晶格Si/Ge的能带结构

用经验的紧束缚方法对短周期的(Si)_n/(Ge)_m形变超晶格的电子态进行了计算。结果表明,由于布里渊区折迭的要求,只有当n+m=10时超晶格才可能产生直接能隙。对周期为n+m=10的超晶格,Γ,N,△处的导带谷间的相对位置对直接能隙的形成具有决定作用,而n的大小与衬底的组分对此有极大影响。(Si)₆/(Ge)₄和(Si)₈/(Ge)₂超晶格在Si_1-xG 关键词：     

微观相场法模拟Ni75Al5.3V19.7 中L12和D022结构反位缺陷的演化

运用微观相场法研究Ni₇₅Al_5.3V_19.7合金沉淀过程中L1₂结构和D0₂₂结构反位缺陷发现：在沉淀初期,L1₂结构反位缺陷Al_Ni,V_Ni,Ni_Al,D0₂₂结构反位缺陷V_Ni,Al_Ni关键词： 微观相场 反位缺陷 L1₂结构')" href="#">L1₂结构 D0₂₂结构')" href="#">D0₂₂结构     

氨分子在000和201带的选择光离解

本文利用脉冲紫外激光(UV)选择激发氨分子到?¹A″₂电子激发态的两个最低振动能级ν′₂=0和ν′₂=1(ν₂振动),然后检测新生态H原子的飞行谱(TOF),研究了氨分子的光碎片动力学。光谱证实了最近所测的离解能D₀⁰(H-NH₂)=4.645eV;绝大多数生成的NH₂(X²B₁)基处于非振动激发,但是具有围绕a惯性轴的高度转动激发。通过NH₃(?)的ν′₂=1光离解产生的NH₂(X)基具有较高的内部激发,并且显示了在N=K_a转动能级上的反转布居。 关键词：     

Specific heat of A-15 Nb3Al0.83Ge0.21

The specific heat of A-15 Nb₃Al_.83Ge_.21 with a transition temperature, T_c, of 20.0 K has been measured from 6 to 25 K. Values of the parameters derived from the data are γ=35.0±2 mJ/mole-K²; the Debye temperature, θ_D=278±5 K; the energy gap, △, normalized as 2△/kT_c, is 4.9±.3, and the thermodynamic critical field, H_c(0), is 4700±300 Gauss.     

碱金属掺杂富勒烯超导体的临界温度和约化能隙研究

碱金属掺杂富勒烯与传统的超导体情况不同，它有一个很宽区域的声子谱，其最高频率和最低频率分别与费密能Ｅ_F和零温超导能隙△₀为同一数量级，这必将导致对原来强耦合超导电性理论的修正。本文在此情况下求解Ｅｌｉａｓｈｂｅｒｇ方程，得到Ｔ_c和△₀的表达式。结果表明，分子间的低频振动模和分子上的高频振动模同样参与电声耦合，Ｔ_c主要取决于声子谱中高频成份的贡献，而△₀的增加主要取决于声子谱中 关键词：     

Superconducting tunneling in PdH

Tunneling measurements have been made on superconducting PdH films. The measured2Δ₀/kT_c ratio was 3.80 ± 0.15 meV. Structure was found in the tunneling density of states at an energy of 48 ± 2 meV, approximately the energy of optic phonons in PdH.     

The energy gap of the high Tc superconductor La1.85Sr0.15CuO4

We have measured the energy gap of a polycrystalline sample of La_1.85Sr_0.15CuO₄ using far-infrared reflectance. The sample was prepared by sintering and has a superconducting transition at 36 ±1 K (mid point of a 2K wide region) both in resistance and magnetic susceptibility. The Meissner effect was incomplete and there was considerable absorption below the gap frequency in the superconducting state. The change in far infrared absorption on going to the superconducting state was fitted to the theory of Mattis and Bardeen, yielding an energy gap of (3.2 ± 0.3) kT_c withT_c= 36 K     

Transverse energy gap in 2H-NbSe2

The transverse energy gap in 2H-NbSe₂ has been measured using a Nb flat “point” contact tunneling technique. Its value of 1.15±0.07 milivolt yields a value of 3.78 for the ratio 2Δ(0)/kT_c.     

Thickness dependence of the forbidden energy gap in stibnite (Sb2S3) thin films

The increase in the energy gap with decreasing film thickness has been observed and studied in case of thin films of stibnite (Sb₂S₃). Such an increase in energy gap, which is inversely proportional to the square of the film thickness, is attributed to quantum effects. The effective mass of electrons has been estimated to be ((0.5±1.0) m₀ from this study.     

Tunneling experiments on amorphous and crystalline superconducting tantalum films

The energy gap and the transition temperature of amorphous and crystalline superconducting Ta films are measured by tunneling experiments. The following values are obtained: 2(0)=0,65 meV,T _c=2,11 K for the amorphous state after quenched condensation and 2(0)=1,24 meV,T _c=4,06 K for the crystalline state after annealing at room temperature. The reduced energy gap 2(0)/kT _c=3,58 demonstrates that amorphous Ta films are weak-coupling superconductors. The crystallization of the amorphous Ta films takes place at 250 K.     

非过渡金属非晶态超导电性的研究

本文中分析了非过渡金属非晶态超导体的超导参量、声子谱参量与霍耳系数之间的经验关系。研究了非晶态超导体的T_c,并得出,声子谱的软化所导致的T_c的提高幅度与电-声子耦合常数λ的提高幅度成线性关系;声子谱的高频截止频率愈高,其T_c也愈高。讨论了利用声子谱的软化虽然能大幅度地提高T_c值,但要获得包括金属Be在内的非过渡金属的高T_c非晶态超导体的希望是渺茫的。还讨论了非晶态超导体的上临界场H_c2和能隙2Δ₀所表现出的强耦合效应等问题。 关键词：     

Optical properties of amorphous CuInSe2

Optical absorption spectra of polycrystalline and amorphous CuInSe₂ thin films were measured at room temperature in the photon energy range from 0.8 to 2.1 eV. In amorphous CuInSe₂ the absorption coefficient follows the relation α(hv) = A(hv?E₀)/hv characteristic of optical transitions between extended states in both the valence and conduction band. The optical gap of E₀ = 1.38 ± 0.01 eV is larger than the fundamental gap energy of E_g = 1.01 ± 0.01 eV in crystalline CuInSe₂. A comparison of the results for CuInSe₂ with those for ZnSe is given.     

Wärmeleitung abschreckend kondensierter Bleischichten

The thermal conductivity of lead containing a large number of structural lattice defects is measured in the temperature range of about 2 to 20 °K. For the first time it is made possible by means of a special technique to investigate quenched films, which have been evaporated on to a cooled substrate in a high vacuum. The thermal conductivity of these films, which is much smaller than that of the bulk material, increases either by annealing or by increasing condensation temperature and film thickness, respectively. For most of the films the heat conduction is shown to be due only to the electrons. Therefore it can be discussed with respect to the validity of Wiedemann-Franz' Law and to deviations from Matthiessen's Rule in the temperature range of small angle scattering between electrons and phonons. The data of the superconducting state can be fitted to the BRT-expression for electronic conduction limited by defect scattering, if an energy gap of 2? ₀=(4.20±0.15)kT _c is chosen. The very small values of the phonon conductivity, estimated for the films with the lowest condensation temperatures, could result from the high concentrations of non-zero dimensional lattice defects, which have been observed earlier in such films.