Instabilities during the formation of electroactive polymer thin films

The solvent-induced film structure of poly(n-vinyl carbazole) (PVK) thin films on indium tin oxide (ITO)-coated glass was examined. PVK thin films were prepared via spin-coating using five different solvents. We investigated the relationship between the solvent characteristics and film properties, including surface roughness and structure, film thickness, and density. The spin-coated polymer thin films are not in thermodynamic equilibrium; rather, the film properties are affected by the dynamics of the spin-coating process. We found that water present in tetrahydrofuran (THF) induces dewetting of PVK films during the spin-coating process. Solvents with a high evaporation rate lead to high surface roughness due to Marangoni convection. The results show that the surface roughness and structure of the films are dominated by the dynamics of the film formation process, rather than thermodynamic interactions between the polymer and solvents.     

基片温度对LiCoO2薄膜结构与电化学性能的影响

采用射频(RF)磁控溅射技术制备了用于全固态薄膜锂电池的非晶态和多晶LiCoO2阴极薄膜,利用XRD和SEM研究了沉积温度对LiCoO2薄膜结构和形貌的影响,并研究了高温退火后薄膜的电化学性能.研究结果表明,随著基片温度的不同,薄膜成分、表面形貌以及电化学行为有明显差异.室温沉积的薄膜很难消除薄膜中Li2CO3的影响,经过高温退火处理后也无法形成有效的多晶LiCoO2薄膜,而150℃沉积的薄膜经过高温退火后形成了有利于锂离子嵌入的多晶LiCoO2结构,薄膜显示出了较好的电化学性能.     

双层铜金属薄膜纳米压痕机械性能的分子动力学模拟

多层金属薄膜的机械性质在纳米组件的设计上是非常重要的.目前,纳米尺度材料的机械性质测量的最主要方法为纳米压痕检测技术.本文应用分子动力学理论对双层铜金属薄膜界面的结构形态与特性进行分析探讨.选用FCC结构单晶铜的(100)面,(110)面和双层铜金属薄膜作为探讨界面性质的材料,进而探讨了单晶铜及双层铜金属薄膜的纳米压痕变形性质.     

纳米晶碳化钨薄膜对硝基甲烷还原的电催化性能

采用磁控溅射物理气相沉积技术在金属镍基体上制备碳化钨纳米晶薄膜. 薄膜具有纳米晶结构, 由粒径为20~35 nm的晶粒构成, 晶粒分布均匀, 晶相结构为非化学计量比的碳化钨(WC1-x). 采用电化学方法研究硝基甲烷在纳米晶碳化钨薄膜电极上的电化学还原性能和反应机理. 实验结果表明, 碳化钨薄膜电极对硝基甲烷电化学还原反应具有较好的催化性能, 当电极电位为-0.89 V(vs.SCE)时, 硝基甲烷还原为甲基羟胺的电流达14.9 mA/cm2, 其反应表观活化能为12.3 kJ/mol. 硝基甲烷在碳化钨薄膜电极上经过一步不可逆的电化学反应还原成甲基羟胺, 其控制步骤是电极反应的电荷传递过程.      

锂离子电池薄膜锡负极材料的制备及容量衰减机理研究

以电镀的方法在铜基底上沉积薄膜锡作为锂离子电池负极材料. 运用X射线衍射、扫描电镜、电化学循环伏安、电化学充放电和交流阻抗等多种方法对其结构和性能进行表征和研究. 结果表明所制备的薄膜锡电极主要为四方晶系结构, 其初始放电(嵌锂)容量为709 mAh•g^－1, 充电(脱锂)容量为561 mAh•g^－1. 电化学循环伏安研究发现在嵌/脱锂过程中薄膜锡经历了多种相变过程. 电化学阻抗谱结果说明, 首次嵌锂过程中当电极电位达到1.2 V在电极表面形成SEI膜, 而当电极电位低于0.4 V表面SEI膜出现破裂, 归因于体积膨胀所致. SEM研究表明30次充放电循环后薄膜锡负极出现龟裂现象.     

Apatite-forming ability of titanium compound nanotube thin films formed on a titanium metal plate in a simulated body fluid

We compared the apatite-forming ability of a sodium titanate nanotube thin film, an anatase-type titanium dioxide nanotube thin film, and a silver nanoparticle/silver titanate nanotube nanocomposite thin film, in simulated body fluid. The ability of the silver nanoparticle/silver titanate nanotube nanocomposite thin film is slightly higher than that of the anatase-type titanium dioxide nanotube thin film and significantly higher than that of the sodium titanate nanotube thin film. The high ability of the silver nanoparticle/silver titanate nanotube nanocomposite thin film is a newly observed phenomenon, which is probably due to the crystal structure of silver titanate – specifically, to the surface atomic arrangement, the large amount of Ti–OH formed on the nanotube surface, or both. The anatase-type titanium dioxide nanotube thin film and the silver nanoparticle/silver titanate nanotube nanocomposite thin film may have bright prospects for future use in implant materials such as artificial joints. The silver nanoparticle/silver titanate nanotube nanocomposite thin film is particularly promising for its antibacterial properties.     

利用X射线衍射考察不同缓冲层对AlGaN外延薄膜微结构的影响

为了获得高质量的高Al组分AlGaN外延材料,一般是在蓝宝石基片与外延层之间引入缓冲层或模板层（GaN、AlN或两者的交替周期超晶格）来提高AlGaN的外延质量,不同的缓冲层及结构对AlGaN的外延质量产生不同的影响.利用三轴晶高分辨X射线衍射（TAXRD）表征手段对2种生长结构下的AlGaN进行表征分析.     

以LiCoO2为阴极的全固态薄膜锂电池的研究

Amorphous and oriented polycrystalline LiCoO2 thin films, used as cathode material for an all-solid-state thin film battery, were fabricated by using RF magnetron sputtering and annealed at different temperatures. The morphology and structure of LiCoO2 thin films were characterized by scanning electron microscopy and X-ray diffraction. All-solid-state thin film batteries, comprised of LiCoO2 cathode films with different structures, lithium phosphorous oxynitride electrolyte film and metallic lithium anode film, was successfully prepared and their properties were examined by chronopotentiometry. Results showed that the structure and crystallinity of the LiCoO2 films strongly influenced the electrochemical performance of all-solid-state thin film lithium batteries. Worth nothing was the battery with an oriented polycrystalline LiCoO2 film it exhibited the best electrochemical performance, and delivered a discharge capacity of ～55.4 μAh/cm2μm. Furthermore, when subjected to over 450 charge/discharge cycles, that battery suffered no obvious fode in capacity.     

脉冲激光沉积纳米NiO薄膜

Na Cl型 Ni O是一种 p型半导体 ,广泛用于传感器、催化剂、涂料、磁性材料及电极材料等领域[1～ 5] .最近 ,Poizot等 [6] 又报道了 Ni O可作为锂离子电池的阳极材料 ,使 Ni O成为又一新的研究热点 .纳米 Ni O粉末的制备方法有多种 ,主要包括化学沉淀法和沉淀转换法 ,Ni O薄膜的制备主要采用磁控溅射、化学气相沉积和电沉积等方法 [7～ 12 ] .脉冲激光沉积法具有操作简单和成膜纯净等优点 ,因此是制备薄膜的重要方法之一 .本文采用脉冲激光沉积 (PLD)法在氧气氛中使用金属镍作为靶材料 ,不锈钢作为基片 ,对 Ni O薄膜的制备进行了研究…     

TiO2多孔薄膜电极的制备、微结构及光电化学性能研究

近年来,半导体纳晶多孔薄膜作为一类重要的纳米结构材料,其光电化学性质及功能特性的研究受到人们广泛关注。由于量子尺寸效应及介电限域效应,它们的光物理、光电化学性质以及电荷传输机理明显异于多晶及单晶体材料。通过简便快捷的涂敷、浸涂或溅射等方法,半导体纳晶多孔薄膜可以在导电衬底上形成。这些薄膜具有高度多孔性、大比表面,易于用有机功能分子或半导体超微粒进行表面修饰^[1-2],在太阳能转换^[2]、光电子器件或电子变色器件^[3]及光催化治理环境污染^[4]等方面具有潜在的应用前景。因此,在光电化学、半导体物理及材料科学领域里研究十分活跃。本文采用涂敷及浸涂提拉方法制备了四种具有不同多孔率及比表面的TiO₂薄膜电极,并对其晶型、表面形貌微结构及光电化学性能进行了研究。     

Ag3PO4/Ni薄膜的制备及其光催化降解罗丹明B的性能和机理

用电化学方法制备Ag₃PO₄/Ni薄膜,以扫描电子显微镜(SEM)、X射线衍射(XRD)和紫外-可见漫反射光谱(UV-Vis DRS)对薄膜的表面形貌、晶相结构、光谱特性及能带结构进行了表征,以罗丹明B为模拟污染物对薄膜的光催化活性和稳定性进行了测定,采用向溶液中加入活性物种捕获剂的方法对薄膜光催化降解机理进行了探索.结果表明:最佳工艺下制备的Ag₃PO₄/Ni薄膜具有致密的层状表面结构,是由多晶纳米颗粒构成的薄膜.薄膜具有较高的光催化活性和突出的光催化稳定性,可见光下催化作用60 min,薄膜光催化罗丹明B的降解率是多孔P25 TiO₂/ITO纳米薄膜(自制)的2.3倍;在保持薄膜光催化活性基本不变的前提下可循环使用6次.给出了可见光下薄膜光催化降解罗丹明B的反应机理.     

ITO基底上ZnO薄膜的制备以及刻蚀图形的扫描电化学显微镜表征

在氧化铟锡(ITO)导电玻璃的衬底上,利用直接电沉积方法制备了ZnO纳米线或ZnO薄膜.然后利用存储有HCI刻蚀剂的琼脂糖微图案印章对其进行了化学刻蚀以形成不同的图形.利用扫描电子显微镜(SEM)、X射线衍射(XRD)和扫描电化学显微镜(SECM)分别对ITO衬底上的ZnO薄膜的结构、形貌和电化学性质进行表征.     

Fabrication of metal structures with nanometer-scale lateral dimensions by sectioning using a microtome

This Communication describes the fabrication of planar structures comprising metallic features with nanometer-scale lateral dimensions in polymer prepared by sectioning a thin metallic film, embedded in a polymer matrix, in a plane perpendicular to the metallic film. This procedure converts a structure that is thin along the z-axis into a structure that is thin along the x-axis. The embedded thin metal film is still conductive and can be used as a nanoelectrode. The structure and composition of the exposed nanoedge can be easily tuned by changing the structure of the surface supporting the metal film, and the composition and the thickness of that film.     

Ag_3PO_4/Ni薄膜的制备及其光催化降解罗丹明B的性能和机理

用电化学方法制备Ag3PO4/Ni薄膜,以扫描电子显微镜(SEM)、X射线衍射(XRD)和紫外-可见漫反射光谱(UV-Vis DRS)对薄膜的表面形貌、晶相结构、光谱特性及能带结构进行了表征,以罗丹明B为模拟污染物对薄膜的光催化活性和稳定性进行了测定,采用向溶液中加入活性物种捕获剂的方法对薄膜光催化降解机理进行了探索。结果表明:最佳工艺下制备的Ag3PO4/Ni薄膜具有致密的层状表面结构,是由多晶纳米颗粒构成的薄膜。薄膜具有较高的光催化活性和突出的光催化稳定性,可见光下催化作用60 min,薄膜光催化罗丹明B的降解率是多孔P25 Ti O2/ITO纳米薄膜(自制)的2.3倍;在保持薄膜光催化活性基本不变的前提下可循环使用6次。给出了可见光下薄膜光催化降解罗丹明B的反应机理。     

薄膜表面等离子体光催化剂Ag@AgBr/CNT/Ni的制备和性能

用复合电沉积技术制备了Ag@AgBr/CNT/Ni表面等离子体薄膜催化剂,以扫描电镜（SEM）、X射线衍射（XRD）、拉曼光谱（Raman Spectra）、X射线光电子能谱（XPS）和紫外-可见漫反射光谱（UV-Vis DRS）对薄膜的表面形貌、晶体结构、化学组成和光谱特性进行了表征,在可见光照射下,用罗丹明B（RhB）作为模拟污染物对薄膜的光催化性质和稳定性进行测定,采用测定薄膜电化学阻抗谱（EIS）和向反应系统中加入活性物种捕获剂的方法对薄膜光催化机制进行探索。结果表明：最优工艺下制备的Ag@AgBr/CNT/Ni薄膜是由少量碳纳米管（CNT）和表面沉积纳米Ag粒子的AgBr晶体构成的复合薄膜。薄膜具有突出的表面等离子体共振效应、优异的光催化活性和良好的催化稳定性。光催化罗丹明B 20 min,Ag@AgBr/CNT/Ni薄膜的降解率是Ag@AgBr/Ni薄膜的1.32倍,是P25 TiO₂/ITO多孔薄膜的21.6倍。在保持光催化性能基本不变的前提下可循环使用5次。CNT的存在使薄膜电荷传导性能和光催化还原溶解氧的性能大幅增加,是所制薄膜相对于Ag@AgBr/Ni薄膜光催化性能提高的主要原因。提出了薄膜光催化罗丹明B的反应机理。     

薄膜表面等离子体光催化剂Ag@AgBr/CNT/Ni的制备和性能

用复合电沉积技术制备了Ag@AgBr/CNT/Ni表面等离子体薄膜催化剂,以扫描电镜(SEM)、X射线衍射(XRD)、拉曼光谱(Raman Spectra)、X射线光电子能谱(XPS)和紫外-可见漫反射光谱(UV-Vis DRS)对薄膜的表面形貌、晶体结构、化学组成和光谱特性进行了表征,在可见光照射下,用罗丹明B(RhB)作为模拟污染物对薄膜的光催化性质和稳定性进行测定,采用测定薄膜电化学阻抗谱(EIS)和向反应系统中加入活性物种捕获剂的方法对薄膜光催化机制进行探索。结果表明:最优工艺下制备的Ag@AgBr/CNT/Ni薄膜是由少量碳纳米管(CNT)和表面沉积纳米Ag粒子的AgBr晶体构成的复合薄膜。薄膜具有突出的表面等离子体共振效应、优异的光催化活性和良好的催化稳定性。光催化罗丹明B 20 min,Ag@AgBr/CNT/Ni薄膜的降解率是Ag@AgBr/Ni薄膜的1.32倍,是P25 TiO_2/ITO多孔薄膜的21.6倍。在保持光催化性能基本不变的前提下可循环使用5次。CNT的存在使薄膜电荷传导性能和光催化还原溶解氧的性能大幅增加,是所制薄膜相对于Ag@AgBr/Ni薄膜光催化性能提高的主要原因。提出了薄膜光催化罗丹明B的反应机理。     

Thin film structure of tetraceno[2,3-b]thiophene characterized by grazing incidence X-ray scattering and near-edge X-ray absorption fine structure analysis

Understanding the structure-property relationship for organic semiconductors is crucial in rational molecular design and organic thin film process control. Charge carrier transport in organic field-effect transistors predominantly occurs in a few semiconductor layers close to the interface in contact with the dielectric layer, and the transport properties depend sensitively on the precise molecular packing. Therefore, a better understanding of the impact of molecular packing and thin film morphology in the first few monolayers above the dielectric layer on charge transport is needed to improve the transistor performance. In this Article, we show that the detailed molecular packing in thin organic semiconductor films can be solved through a combination of grazing incidence X-ray diffraction (GIXD), near-edge X-ray absorption spectra fine structure (NEXAFS) spectroscopy, energy minimization packing calculations, and structure refinement of the diffraction data. We solve the thin film structure for 2 and 20 nm thick films of tetraceno[2,3-b]thiophene and detect only a single phase for these thicknesses. The GIXD yields accurate unit cell dimensions, while the precise molecular arrangement in the unit cell was found from the energy minimization and structure refinement; the NEXAFS yields a consistent molecular tilt. For the 20 nm film, the unit cell is triclinic with a = 5.96 A, b = 7.71 A, c = 15.16 A, alpha = 97.30 degrees, beta = 95.63 degrees, gamma = 90 degrees; there are two molecules per unit cell with herringbone packing (49-59 degree angle) and tilted about 7 degrees from the substrate normal. The thin film structure is significantly different from the bulk single-crystal structure, indicating the importance of characterizing thin film to correlate with thin film device performance. The results are compared to the corresponding data for the chemically similar and widely used pentacene. Possible effects of the observed thin film structure and morphology on charge carrier mobility are discussed.     

纳米二氧化钒薄膜的制备及红外光学性能

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.     

A molecular dynamics study of nanoindentation on a methyl methacrylate ultrathin film on a Au(111) substrate: interface and thickness effects

The molecular dynamics simulation model of nanoindentation is proposed in order to study the mechanical and structural deformation properties of an ultrathin MMA (methyl methacrylate) film on a Au(111) surface. First, the significant differences in the structural arrangement of MMA thin films with different thicknesses are observed. Two layers are apparent in the thinnest MMA thin film next to the Au(111) surface, while three layer structures are apparent in the thicker film. Second, this study examines the indentation tip that penetrates the MMA thin film into the Au(111) substrate in order to understand the influence of the interface on the properties and deformation behavior in both the thin film and substrate. The result shows that the indentation force is influenced both by the layer structure and by the thickness of the MMA film. The thinnest case exhibits different deformation behavior from that of the thicker cases. In addition, the deformation of MMA molecules becomes significant at the interface between the MMA film and the Au(111) surface with the increase of film thickness, and detailed deformation behavior of the Au surface for different thicknesses of MMA film is reported in this paper. Finally, both the rigid and the active models for the indentation tip are utilized in the simulation to examine the interaction differences between the tip and the film and the deformation mechanism.     

Effect of ex situ hydrogenation on the structure and electrochemical properties of amorphous silicon thin film

Nickel-metal hydride (Ni-MH) batteries were widely used due to their various advantages, but its further application and development have been seriously hindered by the low electrochemical discharge capacity of conventional hydrogen storage alloy electrode. The hydrogenated amorphous silicon (a-Si:H) thin film electrode for Ni-MH battery has been proven to have a dramatic electrochemical capacity. We prepared a-Si:H thin films by a two-step process of rf-sputtering followed by hydrogenation, and investigated the effect of hydrogenation on the structure and electrochemical properties of which as an anode. The maximum discharge capacity of a-Si:H thin film electrode after hydrogenation increases from initial 180 mAh·g⁻¹to 1827 mAh·g⁻¹, which is over tenfold that of as-deposited hydrogen-less a-Si thin film electrode. Then, the preliminary relationships between hydrogen content and electrochemical performance of a-Si:H thin film electrode were analyzed, and several negative factors of electrochemical performance for a-Si:H thin film electrode were proposed.