Influence of thermal processing of Mn x Hg1−x Se crystals in mercury and selenium vapor on their magnetic susceptibility

We report a study of the influence of thermal processing of Mn _x Hg_1–x Se crystals in mercury and selenium vapor on the temperature dependence of their magnetic susceptibility. It is shown that thermal processing of Mn _x Hg_1–x Se in mercury vapor leads to diffusion of Hg atoms into the crystal, with a resulting increase in the number of interstitial mercury atoms, which act as donors and increase the electron concentration in the samples. As a consequence, the diamagnetic contribution of the interstitial mercury increases, along with the dia- or paramagnetic contribution of the increasing electron concentration, and there is a change in the contribution of the Mn atoms, which migrate during the anneal, leading to a change in the magnetic susceptibility of the Mn _x Hg_1–x Se crystals. We also show that thermal processing of Mn _x Hg_1–x Se in Se vapor leads to the formation of new clusters in the crystal, or a change in size for ones which preexist (either by increasing or decreasing the size) due to the thermodynamic equilibrium conditions in the Mn _x Hg_1–x Se system, i.e. the relationship between the cluster size and the concentration.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 54–59, August, 1993.     

The hall effect in PdSi-based amorphous alloys containing Co.

The Hall effect in amorphous Pd₈₀Si₂₀ and Pd_80–x Si₂₀Co _x , wherex=2, 4, 6 (at.% are implied throughout) alloys was investigated. Measurements were carried out at r.t. in fields up to 17·5 kG. Also the electrical conductivity was measured. The Hall effect was found negative in all alloys of the above composition. Observedx-dependence of the Hall constantR _H tends to change the sign of the effect and is interpreted on the assumption that an extraordinary Hall effect manifests itself besides the ordinary one in Co-containing alloys. The value ofR _H for the basal alloy should be looked upon as an evidence of electron transfer from glass-former (Si) to transition metal (Pd) empty d-states. The values ofR _H obtained for the alloys withx=0, 2, 4, 6 are respectively, –7·8; –8·7; –8·3; –5·2 (×10^–5 cm³/A. sec throughout).     

Non-superconducting and rendered superconducting YBa2Cu3O7−x . An in-situ photoemission study

We present X-ray photoemission spectroscopy (XPS) results obtained on polycrystalline YBa₂Cu₃O_7–x in the non-metallic (x>0.6) and metallic state (x<0.6) by an in-situ oxygen deloading/loading procedure, thus avoiding uncontrolled surface contaminations. The transition to the metallic (superconducting) state is characterized by corresponding changes in the O1s and Cu2p photoelectron lineshapes being in accordance with charge transfer from CuO₂ planes to CuO chains. In particular, a peak at 531.1 eV binding energy is related to the presence of oxygen hole states (O^–).     

High-temperature operation of AlGaInAs/InP lasers1994

We discuss the design of uncooled lasers which minimizes the change in both threshold current and slope efficiency over the temperature range from–40 to +85°C [1]. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the Al _x Ga _y In_1–x–y As/InP material system [1] instead of the conventional Ga _x In_1–x As _y P_1–y /InP material system. Experimentally, we have investigated strained quantum well lasers with three different barrier layers and confirmed that the static and dynamical performance of the lasers with insufficient carrier confinement degrades severely under high-temperature operation [2]. With an optimized barrier layer, the Al _x Ga _y In_1–x–y As/InP strained quantum well lasers show superior hightemperature performance, such as a small drop of 0.3 dB in slope efficiency when the heat sink temperature changes from 25 to 100°C [3], a maximum CW operation temperature of 185°C [4], a thermally-limited 3-dB bandwidth of 13.9 GHz at 85°C [2], and a mean-time-to-failure of 33 years at 100°C and 10 mW output power [5].     

Electronic structure of solid solutions of argentum halide and heterojunctions based on them

The electronic structure and optical functions of solid solutions of AgCl _1−x Br _x and AgBr _1−x I _x and graded heterojunctions based on them are investigated within the framework of the theory of functional local density by the pseudopotential method in a basic set of numerical sp³d⁵ pseudo-orbitals. The band structure parameters and their dependence on x are determined, and the widths of the valence and forbidden band are shown to vary in a nonlinear fashion. A model of heterocontacts of argentum halide is proposed, and the directions of charge carrier transfer are identified.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 10–14, November 2004.     

Current-voltage characteristics of metal-variband organic semiconductor-organic semiconductor-metal heterostructures

The current-voltage characteristics of nickel-Se_1–xTe_x-organic semiconductorgold (aluminum) heterostructures and the dependence of these characteristics on the temperature and illumination have been investigated. The Se_1–xTe_x layer is a a variband structure with a band-gap gradient of up to 4.l0⁴ eV/cm. A photoelectromotive force (photo-emf) and a thermoelectromotive force have been found to exist in the heterostructures studied. The mechanism of charge transfer is discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 62–67, March, 1990.     

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

In selectively dopedn-Al_xGa_1–xAs/GaAs heterostructures with high-mobility two-dimensional electron gas (2 DEG) at the heterointerface a second conductive channel exists, if the Al_xGa_1–xAs layer is not totally depleted from free carries. The occurrence of parallel conductance has a deleterious effect on the performance of high-electron mobility transistors (HEMTs) fabricated from this material. Although in principle computable, parallel conductance depends on a large number of design parameters to be chosen for the heterostructure, which are additionally affected by the presence of deep electron traps inn-Al_xGa_1–xAs of composition 0.25n-Al_xGa_1–xAs/GaAs heterostructures is shown.     

57Fe Mössbauer study of Eu1−x Sr x FeO3−y

The samples of Eu_1–x Sr _x FeO_3–y (x=0.0–1.0) were prepared by the solid state reaction method. Their X-ray diffraction patterns and⁵⁷Fe Mössbauer spectra at room temperature were measured. It is found that Sr ions incorporate in the lattice of EuFeO₃, the change of crystal structure is related to the dopant.⁵⁷Fe Mössbauer spectra consist of one magnetic, one doublet and one single paramagnetic components. The Fe ions in the cubic phase are in intermediate valence state between Fe(III) and Fe(IV) and may participate in electron hopping.     

Materials and device properties of pseudomorphic In x Ga1−x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0<x<0.5)

Modulation doped Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy. Initially the critical layer thickness for InAs mole fractions up to 0.5 was investigated. For InAs mole fractions up to 0.35 good agreement with theoretical considerations was observed. For higher InAs mole fractions disagreement occurred due to a strong decrease of the critical layer thickness. The carrier concentration for Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures with a constant In _x Ga_1–x As quantum well width was investigated as a function of InAs mole fraction. If the In _x Ga_1–x As quantum well width is grown at the critical layer thickness the maximum carrier concentration is obtained for an InAs mole fraction of 0.37. A considerable higher carrier concentration in comparison to single-sided -doped structures was obtained for the structures with -doping on both sides of the In _x Ga_1–x As quantum well. Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures with InAs mole fractions in the range 0–0.35 were fabricated for device application. For the presented field effect transistors best device performance was obtained for InAs mole fractions in the range 0.25–0.3. For the field effect transistors with an InAs mole fraction of 0.25 and a gate length of 0.15 m a f _T of 115 GHz was measured.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Charge carriers and mobility of Cu-Ti ferrite

The concentration and drift mobility of charge carriers in Cu_1–x Ti _x Fe₂O₄ ferrite are calculated, over a wide range of temperatures (300–773 K), employing d.c. conductivity and thermoelectric power data. With increasing temperature the concentration of charge carriers decreases whilst the drift mobility exhibits an exponential increase. Over the above-mentioned temperature range, the obtained density of charge carriers varies between 10²¹ and 10²² cm^–3 whereas the drift mobility has values between 10^–8 and 10^–4 cm²/V s. The results are discussed on the basis of a small-polaron hopping conduction. The activation of the d.c. conductivity has been attributed to the thermal activation of the mobility.     

Study of the pion trajectory in the photoproduction of leading neutrons at HERA

Energetic neutrons produced in ep collisions at HERA have been studied with the ZEUS detector in the photoproduction regime at a mean photon–proton center-of-mass energy of 220 GeV. The neutrons carry a large fraction 0.64<x_L<0.925 of the incoming proton energy, and the four-momentum transfer squared at the proton–neutron vertex is small, |t|<0.425 GeV². The x_L distribution of the neutrons is measured in bins of t. The (1−x_L) distributions in the t bins studied satisfy a power law dN/dx_L∝(1−x_L)^a(t), with the powers a(t) following a linear function of t: . This result is consistent with the expectations of pion-exchange models, in which the incoming proton fluctuates to a neutron–pion state, and the electron interacts with the pion.     

Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates

Amorphous silicon oxide (SiO_x) nanowires were directly grown by thermal processing of Si substrates. Au and Pd–Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiO_x nanowires was achieved by a simple heating process (1000–1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiO_x nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid–liquid–solid model of nanowire formation was shown to be valid.     

Some physical properties of calcia and yttria stabilized ThO2 ceramics

In this paper the density, electrical conductivity, and dielectric permittivity of vacant ceramics of Ca _x Th_1–x O_2–x and Y _x Th_1–x O_2–x /2 type, respectivelly, were investigated as functions of temperature, frequency, and composition of these systems.The density drops with increasing calcium or yttrium amount, respectively. In the ThO₂-CaO system this is in agreement with the mechanism of formation of vacant phase Ca _x Th_1–x O_2x . The decrease of porosity in the ThO₂-Y₂O₃ system with increasing yttrium content can be due various factors which influence the mobility of Y³⁺ ions and, thus, also the formation of pores.The investigation of transport numbers has shown that whilst the Ca _x Th_1–x O_2–x phase under our experimental conditions is essentially p-type conductor, the Y _x Th_1–x O_2–x/2 phase is essentially ionic conductor.The transport of ion carriers is a diffusion-like process which has activation energy 1·28 to 1·16eV in the Ca _x Th_1–x O_2–x phase and 1·28 to 1·06 in the Y _x Th_1–x O_2–x /2 phase, respectively. The association of impurity ions with anion vacancies provides the maxima in conductivity isotherms.The relative dielectric permittivity of the vacant phase Ca _x Th_1–x O_2–x ranges from 19·2 to 36·2, in the phase Y _x Th_1–x O_2–x /2 from 19·2 to 103, depending on temperature, frequency, and composition of these systems.     

Magnetic and magnetotransport properties of Co-doped manganites with perovskite structure

A systematic study of the doping of the Mn-sites by cobalt in three series of manganites — La_0.76Ba_0.24(Mn_1−xCo_x)O₃ single crystals, La_2/3Ba_1/3(Mn_1−xCo_x)O₃ and La(Mn_1−xCo_x)O₃ ceramics has been performed. It was found that La(Mn_1−xCo_x)O₃ annealed at 800°C in the range 0.4x0.9 is a mixture of ferromagnetic domains with ordered Mn and Co ions and ionically disordered spin-glass domains. In the quenched samples the fraction of spin-glass-type component increases strongly. The La_2/3Ba_1/3(Mn_1−xCo_x)O₃ solid solutions exhibit also an evidence for phase separation in the range 0.5x0.8. All the La(Mn_1−xCo_x)O₃ samples show an insulating behavior, however, magnetoresistance reduces strongly when the cobalt content rises to x=0.5. The La_0.76Ba_0.24(Mn_1−xCo_x)O₃ single crystals show first-order phase transition below their Curie points associated with a change of ground state of the Co²⁺ ions. The magnetic phase diagrams are depicted. The results are discussed in terms of positive Mn³⁺–O–Mn⁴⁺, Mn³⁺–O–Mn³⁺, Mn⁴⁺–O–Co²⁺ and negative Mn⁴⁺–O–Mn⁴⁺, Co²⁺–O–Co²⁺, Co²⁺–O–Mn³⁺ superexchange interactions as well as Co²⁺ and Mn⁴⁺ ionic ordering.     

CNDO studies of Y-Ba-Cu-O superconductors II. Simple models of YBa2Cu3Ox

The electronic structure of YBa₂Cu₃O_x (x=6 and 7) is investigated using the CNDO molecular orbital method. Electronic structures of model clusters [Cu₃O₁₀]^–15, [Ba₈Cu₃O₁₀]⁺¹, [Y₈Cu₃O₁₀]⁺⁹ of the non-superconducting (x=6) and [Cu₃O₁₂]^–17, [Ba₈Cu₃O₁₂]^–1, [Y₈Cu₃O₁₂]⁺⁷ of the superconducting (x=7) phases are compared. Y and Ba layers cause a considerable electron density transfer from the central Cu(1) region.     

Ab initio study of structural, electronic and optical properties of Ca1−xSrxS compounds

Full-potential linearized augmented plane wave method (FP-LAPW) within density functional theory has been used to calculate structural, electronic and optical properties of Ca_1−xSr_xS, an alkali earth chalcogenide, with varying compositional parameter x in the range 0<x<1. Whereas the structural properties are discussed in terms of charge transfer between the two cations, calculated electronic band structure and density of states have been analyzed in terms of contribution from the S p, Ca d and Sr d states. Furthermore, we have calculated some optical properties such as real and imaginary parts of dielectric constant, ε(ω), and the calculated results have been discussed in comparison with the existing experimental data and other theoretical calculations.     

Conversion of FexCo1–x Si and FexMn1–x Si Weak Band Magnetic Materials Caused by the Electron Concentration

The resistance of Fe_xCo_1–x Si and Fe_xMn_1–x Si weak band magnetic materials in the temperature interval 4.2–300 K is measured. Based on the experimental data, the conversion from semiconducting and submetallic materials with negative temperature resistance coefficients (TRC) to materials with positive TRC caused by the electron concentration is described. It is demonstrated that the main reason for the conversion of the electronic structure is splitting of s-, p- and d-electronic spectra in fluctuating exchange fields. As a result, the number of current carriers increases significantly with the temperature. The competition of this effect with electron-phonon scattering is the basic mechanism of forming resistive states with abnormally low TRC in the examined weak band magnetic materials.     

Mechanism for Conversion of the Conductivity Type in Arsenic-Doped p-CdxHg1–xTe Subject to Ionic Etching

Based on an analysis of chemical diffusion of mercury in p-Cd _x Hg_1–x Te:As narrow-band solid solutions, a mechanism for conversion of the conductivity type upon ionic etching is suggested. It is shown that the n–p conversion of the conductivity in this case is due to the formation of a donor complex between arsenic in the Te sublattice and an interstitial Hg atom. Moreover, the electron concentration in the converted layer corresponds to the concentration of the implanted arsenic impurity. The theoretical results are confirmed by the experimental investigation of the electron concentration distribution over the n-layer of a p-Cd _x Hg_1–x Te:As epistructure converted upon ionic etching.     

The electronic structure of bcc-based random solid solutions of transition metals

The electronic structure of Nb _x Zr_1–x , V _x Nb_1–x and Mo _x V_1–x random solid solutions with the bcc lattice structure is investigated in the frame of the first-principles tight-binding muffin-tin orbital method and the coherent potential approximation. The total and component densities of states as well as the Bloch spectral densities are determined over a broad concentration range.     

Low temperature magnetostriction and magnetization of RE x Y1−x Pd3-alloys

Low temperature magnetostriction and magnetization measurements are reported for the series of RE _x Y_1–x Pd₃ alloys and for some REPd₃ compounds. The magnetostriction per Rare Earth ion is nearly independent of concentration and conserves volume at low fields. In both the alloys and compounds with the heavy Rare Earths and with Nd the magnetostriction tends to saturate at high fields together with the magnetization. The saturated quadrupolar magnetostriction as extracted from these data via the Callen projection, is of order a few times 10^–3 per Rare Earth ion. Sign and magnitude of this quadrupole do not correlate with the Stevens factor. The results are discussed in terms of aspherical screening of the nuclear charge from the outer valence electrons by the intervening 4f charge distribution.Supported by Sonderforschungsbereich 125, Deutsche Forschungsgemeinschaft, FRG