Space-selective modification of the magnetic properties of transparent Fe3+-doped glass by femtosecond-laser irradiation

We have demonstrated spatially selective modification of the magnetic properties of transparent iron-oxide-doped glass by femtosecond- (fs-) laser irradiation and subsequent annealing. A near-infrared fs-laser beam with a wavelength of 775 nm was focused 1 mm below the surfaces of glass samples. This produces absorption peaks due to the formation of hole-trap centers in the irradiated region. Transparency was recovered after annealing at 450°C. A ferrimagnetic component was observed in the M–H curve even at room temperature, whereas the diamagnetic component dominated in the M–H curve of the as-prepared glass sample. This indicates that fs-laser irradiation enhanced the magnetization in the irradiated area. The irradiated and annealed glass sample also exhibited superparamagnetic blocking in the temperature dependence of the magnetization with a blocking temperature higher than room temperature. This change in magnetism is presumably due to local crystallization of ferrimagnetic nanoparticles, such as magnetite, induced by fs-laser irradiation and annealing. The magnetic and optical properties of glass that had been annealed but not irradiated by a fs-laser beam remained unchanged.     

Mechanooptical investigations of polyimide films exposed to electrons,mechanical loads,and temperatures

Joint effect of high-energy electrons, mechanical loads, and temperature on polyimide films of thicknesses in the range 30–130 μm is investigated. The films were preliminary irradiated by electrons in air using an éLU-6 linear accelerator with energy of 2 MeV and doses D = 1, 5, 10, 20, 30, 40, and 100 MGy and then subjected to uniaxial mechanical tension at temperatures (T) from 293 to 593 K. It is established that at T = 293–450 K and D = 20–40 MGy, the mechanical load causes almost the same deformations (ε_{l max}) of nonirradiated and irradiated samples; at T = 450–550 K, deformations of films sharply increase, and the character of their dependence changes. The ε_{l max} value of the initial sample increases almost linearly with temperature by a factor of 10, whereas the character of changing ε_{l max}(T) of the irradiated films is more complex, and its value increases approximately by a factor of 4. For T > 500 K, the deformation reaches limiting values. Irradiation increases the intensity of IR-spectra by 2–6 times and essentially increases the widths of absorption bands at 720, 1380, and 1775 cm⁻¹, which is caused by the formation of hydrogen bonds and cycles with nitrogen as well as by the formation of nitrogen oxides. External loading applied to film rupture causes an increase in the EPR signal amplitude from 3·10³ to 5·10³, which is connected with an increased concentration of radicals =N-H and-NH ₂. The electron irradiation of the polyimide films with their subsequent mechanical loading causes the spectrum lines to displace from 3475.0 to 3512.5 cm⁻¹ with simultaneous reduction of the signal amplitude from 6·10³ to 4·10³. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 52–58, February, 2007.     

Low-temperature STM/STS investigation of nanostructures created by an STM tip on Au(111) surfaces

The structural stability of rapidly solidified (about 10⁴ K/s) Sn–3.7Ag–0.9Zn eutectic solder was explored by high-temperature annealing. For the as-cast solders, the applied fast cooling rate had a significant influence on the microstructure of the solders. The faster the applied cooling rates, the smaller the β-Sn dendrites. After annealing at 473 K for 20 and 50 h, β-Sn dendrites congregated together into bulk ones for minimizing the interfacial energy, and Ag₃Sn intermetallic compounds (IMCs) as well as ternary Ag–Zn–Sn IMCs segregated on the grain boundary of the β-Sn dendrites. It seems that the coarsening of the β-Sn dendrites in the rapidly solidified specimen brought a significant softening during annealing of the explored Sn–Ag–Zn alloy. Finally, the β-Sn dendrites vanished gradually with increase of the annealing period, which leads to a kind of softening.     

Investigations into properties of charge traps created in CCDs by neutron and electron irradiation

Our group has been investigating the effects related to radiation damage of CCDs since 1998. In a series of measurements in 2003 we found the puzzling effect of very slow filling of charge traps created by radiation damage of the silicon device. In 2005 we intended to study this phenomenon in detail. However, while in 2003 we could see all the traps created by neutron irradiation in 1998–1997 unchanged, such traps unexpectedly almost completely disappeared in 2005. We explain this as an effect of annealing induced by electron irradiation, as in 2003 we irradiated with electrons the same device irradiated with neutrons in 1997–1998. Results of the 2005 measurements are presented.      

Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

A new model of irradiation-induced disordering of semiconductors is proposed. According to this model, the disordered regions capable of self-annealing are stabilized by self-localized electronic excitations (electrons, holes, excitons). Pulsed annealing of these regions occurs through recombination of the electronic stoppers and dispersal of disordered regions thus takes place. This model agrees well with the experiments on amorphisation and laser pulse annealing. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 67–72, April 2006.     

Radiation-induced defects in thin Cu(In,Ga)Se<Subscript>2</Subscript> films on exposure to high-energy electron irradiation

At 4.2 K, the photoluminescence spectra of Cu(In,Ga)Se₂ films irradiated by electrons with an energy of 5 MeV displayed the 0.93-and 0.79-eV bands that owe their origin to the radiative recombination of nonequilibrium charge carriers on radiation-induced defects. The position of the energy levels of the defects is determined and their nature is discussed. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 805–808, November–December, 2005.     

CO2 laser-induced crystallization of sol–gel-derived indium tin oxide films

Indium tin oxide (ITO) thin films prepared by the sol–gel method have been deposited by the dip-coating process on silica substrates. CO₂ laser is used for annealing treatments. The electrical resistivity of sol–gel-derived ITO thin films decreased following crystallization after exposure to CO₂ laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m² laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×10² Ω/□.     

Effect of neutron irradiation of colorless sapphire (leucosapphire) single crystals on their absorption and luminescence spectra

Features of the thermoradiative changes in the optical absorption and luminescence spectra of leucosapphire (colorless sapphire) crystals irradiated by neutron fluences within the range 5·10¹⁵ to 5·10¹⁹ cm⁻² have been studied in the visible region. The stepwise character of these processes was established as well as the basic steps involved in bleaching the induced color of the wafers as a result of isochronal annealing. Some anomalies have been observed in the temperature dependence of the optical density of the 460–620 nm bands, the activation energies for the color centers as well as the color center concentrations have been calculated, and the nature of the radiation-induced centers has been analyzed. An analytical expression is proposed to describe the accumulation kinetics for the centers during irradiation of the crystals by reactor neutrons. It is concluded that there is an interconnection between, for example, the 460 nm color centers and the 540 nm luminescence centers, and that there is a common mechanism for the process of radiation-induced defect formation, initially responsible for their formation in the crystal. The possible effect of reabsorption of radiation on the behavior of the Y(Φ) curve in the irradiated material is discussed. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 2, pp. 247–251, March–April, 2007.     

Transformation of radiation-induced defects responsible for theF-band of absorption in NaF crystals subjected to irradiation with light and annealing

It has been found that the F-band of optical absorption which is observed in ψ-irradiated NaF crystals consists of three overlapping bands. The band at 345 nm of width 40 nm is independent of the impurity composition of the crystals; it disappears upon exposure to radiation at 345 nm and appears again upon annealing at 460±15 K for 15 min. This band is correlatable in intensity with the superfine structure of an EPR spectrum. The width (65–110 nm) and the spectral position (355–375 nm) of the second band depend on the impurity composition of the crystal. The band of width 90–110 nm at 320–325 nm disappears upon annealing and appears after exposure to light simultaneously with the disappearance of an EPR signal. It is established that the band at 345 nm is caused by quasimolecules based on fluorine atoms, that at 355–375 nm is triggered by F-centers with a different impurity composition near the haloid vacancy, and the band at 320–325 nm owes its appearance to F-centers in a negatively charged state (F′). Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70 F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 6, pp. 849–853, November–December, 1999.     

Scanning tunneling microscopy study of thermal-diffusion-assisted self-organization on a tungsten crystal surface

The initial stage of faceting on the tungsten (110) vicinal plane during annealing in conditions close to thermodynamic equilibrium or favoring thermal-diffusion-assisted mass transport is studied by scanning tunneling microscopy. In the first case, the initial nanofacets (the traces left after electrochemical polishing) arrayed at a repeat frequency q=(3–4)·10⁵ cm⁻¹ merge to form microsteps with clearly pronounced faceting. In the second, the nanofacet pattern is overlaid by a wavelike, sinusoidally corrugated structure. The corrugation frequency is in a good agreement with the theoretical estimate obtained within the surface mass-transport model. Fiz. Tverd. Tela (St. Petersburg) 39, 968–971 (June 1997)     

Influence of ion bombardment on the photoluminescence response of embedded CdS nanoparticles

Semiconductor nanoparticles (CdS) were fabricated by an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. Nano-CdS in PVA were subjected to ion irradiation (using oxygen, chlorine and gold) in the medium energy range (80–100 MeV) and under fluence variation of 10¹¹–10¹³ ions/cm². The nature of light emission was found to be drastically different in each of the three cases. Photoluminescence spectra of oxygen irradiated samples exhibit band edge emission (2.8 eV) as well as trap related emission (1.76 eV) whereas band edge emission is found to be bleached out for chlorine ion irradiated nano-CdS. The intense broad PL peaks, noticeable in the case of gold ion irradiated samples suggest superposition of the two peaks — namely, band edge emission and trap related emission. Furthermore, in the case of gold ion irradiated nano-CdS, energy shift in the PL spectra reveals variation in size distribution caused by the extra pressure effect of heavy gold ion beams. The mechanism of such a difference as a result of ion irradiation-type and ion-fluence is discussed in detail.     

Geminate recombination of long-lived electron-hole pairs in doped carbazole-containing amorphous molecular semiconductors

This paper reports an investigation into the features of geminate recombination of long-lived electron-hole pairs in films of poly(N-epoxypropylcarbazole) (PEPC) containing intramolecular charge transfer compounds as centers of photogeneration of charge carriers carried out by measuring the attenuation kinetics of isothermal recombination luminescence over a wide range of temperatures (4.2–300 K) for times t>1 s, along with the kinetics of photoinduced EPR signals. A study is made of how the presence of a potential barrier to the reverse transition of carriers to the recombination center and the initial triplet state of the charged pairs affects the geminate recombination. It is established that the kinetics of isothermal recombintation luminescence attenuation follow the law I(t)∝t ^−m for the times under study, where m takes values from 0.65 to 1.05. The first observations of a nonmonotonic change in m with temperature are reported (m passes through a minimum at a certain temperature), and a mechanism is proposed for recombination of charged pairs in PEPC containing intramolecular charge-transfer compounds as an explanation for this phenomenon. Fiz. Tverd. Tela (St. Petersburg) 39, 1183–1187 (July 1997)     

c-axis-textured LiNbO3 thin films on Si (111) substrates

We have successfully prepared highly c-axis-textured LiNbO₃ films on hydrogen-terminated Si (111) substrate using sol-gel spin-coating and rapid thermal annealing. These highly c-axis-textured films were obtained with a preheating at 300 °C for 15 min followed by a rapid thermal annealing at 500–700 °C for 120 s. The c-axis orientation of the LiNbO₃ film is due to a weak effect caused by the 3-fold symmetry match between the film and the Si (111) substrate. The c-axis orientation of LiNbO₃ films is very useful in integrated optics devices and metal–ferroelectric–semiconductor nonvolatile memory applications. Received: 15 September / Accepted: 4 December / Published online: 3 April 2001     

Absorption and scattering of high-power laser radiation in low-density porous media

We have experimentally investigated the interaction of high-power neodymium laser pulses in the intensity range 10¹³–10¹⁴ W/cm² with flat low-density (0.5–10 mg/cm³) agar-agar targets under conditions of interest for problems of inertial nuclear fusion. Optical and x-ray methods with high temporal and spatial resolution were used to examine the dependence of absorption and scattering of the incident beam on the initial mean density and thickness of the irradiated samples. We show that when a porous target is irradiated, a bulk absorption layer of high-temperature plasma is produced inside the target whose dimensions are determined by the initial density of the material. The time dependence and spectral composition of the harmonics 2ω ₀ and 3ω ₀/2 observed in the plasma-scattered radiation are measured. A theoretical model is developed that describes the interaction of high-power laser pulses with a porous medium. Predictions of the model, based on the hypothesis of two stages of homogenization of the target material—a fast stage (0.1–0.3 ns) and a slow stage (1–3 ns), are in good agreement with the experimental data. Zh. éksp. Teor. Fiz. 115, 805–818 (March 1999)     

Luminescence of silicon films on sapphire irradiated with high-energy particles

Using low-temperature (4.2–78 K) photoluminescence, we study the processes of defect formation in silicon films on sapphire irradiated with high-energy particles (electrons, γ-quanta of⁶⁰Co). It is established that carbon atoms, as a residual process impurity, participate in the formation of luminescence centers stable up to annealing temperatures of about 550 K. For carbon-containing centers we reveal a shift in the spectral lines relative to their position in spectra of single-crystal silicon. It is proposed that this spectral shift is associated with the presence of internal stresses of about 5·10⁸ N/m² in the silicon films. Institute of Solid-State Physics and Semiconductors, National Academy of Sciences of Belarus, 17, P. Brovka Str., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskefii, Vol. 66, No. 3, pp. 383–386, May–June, 1999.     

Direct patterning of gold oxide thin films by focused ion-beam irradiation

For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar⁺ laser beam and a 30 keV Ga⁺ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10–100 μm) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x (130–150 °C). For smaller dimensions (100 nm to 10 μm) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6–7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5×10⁷ Ω/□ to approximately 6 Ω/□). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force microscopy (AFM) investigations, indicate that the FIB patterning in the low-dose region (10¹⁴ Ga⁺/cm²) is combined with a volume reduction, which is caused by oxygen escape rather than by sputtering. Received: 30 May 2000 / Accepted: 31 May 2000 / Published online: 13 July 2000     

Kinetics of laser-induced oxidation of silicon near room temperature

The growth of ultra-thin (<6 nm) silicon-dioxide films on Si(100):H, Si(111):H, and a-Si:H surfaces in a dry oxygen atmosphere (0.1–10 Pa) at low temperatures (35–200 °C) was investigated. Oxidation was induced by pulsed F₂-laserradiation at 157 nm. The thickness and composition of the growing films were monitored in real time by spectroscopic ellipsometry in the photon energy range of 1.15–4.75 eV. The kinetics of low-temperature oxidation was similar for the Si surfaces investigated and differs from that of high-temperature thermal oxidation (900–1200 °C) that can be described by the Deal–Grove model. To explain the faster growth at the initial stage, it is proposed that oxidation occurs by diffusion of oxygen atoms O and/or ions O^-rather than oxygen molecules. The recombination of diffusive species to oxygen molecules limits their penetration into the bulk. A diffusion model is developed for low-temperature oxidation which takes into account the recombination process of the diffusive species. Good agreement between theory and experiment is found. The activation energy of diffusion of the active species was found to be 0.15 eV, in agreement with previous results and recent calculations for O^- ions. PACS 82.65.+r; 07.60.Fs; 81.65.Mq; 82.50.Hp     

The influence of temperature on σ-phase formation and the resulting hardening of Fe–Cr–Mo-alloys

Hardening in Fe–Cr–Mo-alloys due to the formation of σ-phase, has been the subject of theoretical and experimental interest. In the present investigation Fe–Cr-alloys containing 0, 2, 4 and 6% Mo were prepared and were fully transformed to the σ-phase by isothermally annealing the samples for various periods at temperatures of 600–800oC. After each annealing cycle room temperature CEMS-spectra were recorded and micro-hardness tests were performed. The micro-hardness increases with annealing time and temperature, in accordance with the fraction of σ-phase present, and ranged from about 140 HV to 200 HV. From the measurements, activation energies were also deduced. This revised version was published online in August 2006 with corrections to the Cover Date.     

Structural changes induced on strontium barium niobate glass by femtosecond laser irradiation

Localized modification of the optical properties of erbium doped strontium barium niobate (SBN) glass has been performed using femtosecond laser irradiation. The samples, with composition SrO–BaO–Nb₂O₅–B₂O₅ and doped with 5%mol of Er³⁺, were fabricated using a melt-quenching method. The samples were irradiated with different number of pulses per spot (1–50 pulses) at two different laser fluences (2.6 and 5.6 J/cm²) by using an fs laser amplifier operating at 800 nm and generating pulses with a duration of 120 fs. Micro-luminescent microscopy, using an Ar⁺ laser as excitation source, has been used to analyze the modifications of the luminescent properties of the sample upon fs laser exposure. The emissions of the Er³⁺: ⁴I_11/2→⁴I_15/2 and ⁴I_13/2→⁴I_15/2 transitions allow appreciating the structural modifications caused by femtosecond laser exposure. The lifetimes of the levels involved in these transitions were measured inside and outside the laser irradiated region. These measurements have been compared with those obtained in bulk glass ceramic sample, which is obtained from the glass precursor by a thermal treatment in order to estimate the optimal conditions to produce nanocrystals in a localized region by ultrafast laser irradiation.     

Photoconversion of 2-methylphenol, 4-methylphenol, and 2-amino-4-methylphenol in water

We have used fluorescence spectroscopy to study photoconversions of 2-methylphenol (2-MP), 4-methylphenol (4-MP), and 2-amino-4-methylphenol (2-A-4-MP) in water when excited by UV radiation from different sources. We discuss the effect of the acidity of the medium and dissolved oxygen on photoconversions of the indicated methylphenols. The photodegradation efficiency for 2-MP and 4-MP decreases in the absence of oxygen. The photoconversion efficiency for methylphenols in alkaline medium is higher when irradiated by light with λ_rad = 283 nm, while in neutral medium it is higher when irradiated by light with λ_rad = 222 nm. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 566–572, September–October, 2006.