MeV高能B+离子注入Si中二次缺陷的抑制与消除

本文研究了MeV高能B⁺离子注入Si中二次缺陷的退火行为。提出一种新型的双重注入退火方法,抑制或消除了MeV高能B⁺离子注入Si样品中的二次缺陷。还对这种二次缺陷的被抑制与被消除的物理机制进行了讨论。 关键词：     

氦氢离子协同注入对锆膜形貌及物相结构的影响

采用磁控溅射法制备了Zr-Mo膜,随后在低能静电加速器上分别采用剂量为2.80×10¹⁷～1.12×10¹⁸ions·cm^-2的He⁺、H⁺离子辐照Zr-Mo膜,利用光学透镜、扫描电镜、原子力显微镜和X射线衍射研究He⁺、H⁺离子协同注入效应对Zr-Mo膜微观结构的影响。实验结果表明:原始Zr-Mo膜表层晶粒清晰可见,尺寸约为200nm;辐照效应可导致Zr-Mo膜表层产生微观损伤区域,在注He⁺基础上注H⁺导致Zr-Mo膜出现更为严重的损伤现象;离子注入的表面溅射效应可使膜面晶粒边界逐渐刻蚀退让,导致膜面更加光滑、细致;He⁺、H⁺离子协同注入可使Zr-Mo膜晶格发生畸变,注入期间未使Zr-Mo膜发生吸H相变生成氢化物。     

Mg+注入对GaN晶体辐射损伤的研究

在蓝宝石衬底上通过金属有机物化学气相沉积(metal-organic chemical vapor deposition，MOCVD)方法外延生长的GaN薄膜具有良好的结晶品质，χ_min达到2.00%. 结合卢瑟福背散射/沟道(Rutherford backscattering/channeling，RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction，HXRD)的实验测量，研究了不同剂量和不同角度Mg⁺注入GaN所造成的辐射损伤. 实验结果表明，随注入剂量的增大，晶体的辐射损伤也增大，注入剂量在1×10¹⁵atom/cm²以下，χ_min小于4.78%，1×10¹⁶atom/cm²是Mg⁺注入GaN的剂量阈值，超过这个阈值，结晶品质急剧变差，χ_min达到29.5%；随机注入比沟道注入的辐射损伤大，且在一定范围内随注入角度的增大，损伤也增大，在4×10¹⁵atom/cm²剂量下偏离〈0001〉沟道0°，4°，6°，9°时的χ_min(%)分别为6.28，8.46，10.06，10.85；经过700℃/10min+1050℃/20s两步退火和1000℃/30s高温快速退火后，晶体的辐射损伤都有一定程度的恢复，而且1000℃/30s高温快速退火的效果更好，晶体的辐射损伤可以得到更好的恢复. 关键词： GaN 卢瑟福被散射/沟道 高分辨X射线衍射 辐射损伤     

离子注入n型GaN光致发光谱中宽黄光发射带研究

利用离子注入方法和光致发光技术系统研究了注入离子对n型GaN宽黄光发射带的影响.实验采用的注入离子为：N，O，Mg，Si和Ga，剂量分别为10¹³，10¹⁴，10¹⁵和10¹⁶/cm²，注入温度为室温.注入后的样品在900 ℃流动氮气环境下进行热退火，退火时间为10 min，并对退火前后的样品分别进行室温光致发光测量.通过实验数据的分析，独立提出了提取注入离子对晶体黄光发光特性影响的半经验模型.利用该模型导出的公式，可以确定注入的N，O，Ga，Mg和Si离子对黄光发射带的影响随注入剂量的变化关系以及该影响的相对强弱. 关键词： 氮化镓 光致发光谱 离子注入     

InSb中离子注入二次缺陷研究

本文用平面的透射电子显微术(TEM)、剖面的透射电子显微术(XTEM)以及卢瑟福背散射和沟道谱(RBS),研究InSb中离于注入Zn⁺,Mg⁺,Be⁺产生的二次缺陷。以及它们的退火特性。结果表明,轻离子Be⁺注入产生的二次缺陷比重离子Zn⁺注入产生的要少得多,而Mg⁺离子介于Be⁺离子和Zn⁺离子之间,在中等剂量下(1×10¹³cm^-2附近),注入损伤并不严重,而且容易恢复。从360℃到440℃之间作了退火温度的研究。从研究结果发现,退火温度以360℃为佳。离子注入InSb中的二次缺陷的形貌与Si中的不同,InSb中的二次缺陷以位错网为主,位错环所占比例不大且尺寸较小,而沉淀物和层错四面体也出现在其中。 关键词：     

离子注入形成SOI结构的界面及埋层的俄歇能谱研究

本文中研究了O⁺(200keV,1.8×10¹⁸/cm²)和N⁺(190keV,1.8×10¹⁸/cm²)注入Si形成SOI(Silicon on Insulator)结构的界面及埋层的化学组成。俄歇能谱的测量和研究结果表明:注O⁺的SOI结构在经1300℃,5h退火后,其表层Si和氧化硅埋层的界面存在一个不饱和氧化硅状态,氧化硅埋层是由SiO₂相和这不饱和氧化硅态组成,而且氧化硅埋层和体硅界面不同于表层Si和氧化硅埋层界面;注N⁺的SOI结构在经1200℃,2h退火后,其氮化硅埋层中存在一个富N的疏松夹层,表层Si和氮化硅埋层界面与氮化硅埋层和体硅界面性质亦不同。这些结果与红外吸收和透射电子显微镜及离子背散射谱的分析结果相一致。还对两种SOI结构界面与埋层的不同特征的原因进行了分析讨论。 关键词：     

用椭圆偏光法研究硅中砷离子注入的损伤和退火效应

我们用椭圆偏光法对As⁺离子注入Si的损伤和退火效应进行了测量。对As⁺注入能量为150keV、注入剂量为10¹⁶cm^-2的情况,测得的折射率分布呈现平台型,表明出现了非晶质层。在600—700℃间有一转变温度,高于此温度退火,可消除非晶质层。实验结果表明椭圆偏光法亦是测定辐射损伤的有用工具。 关键词：     

喷雾热解法制备的SrWO4膜的阴极射线发光

利用超声喷雾热解法制备了钨酸锶SrWO₄多晶发光膜,并研究了制备条件及掺杂对其阴极射线发光特性的影响.生成的发光膜在300℃以上退火后具有白钨矿结构,其阴极射线发光为一宽带的蓝光,包括一个位于448nm的蓝色发光带和一个位于488.6nm的蓝绿色发光带,是由阴离子络合物WO₄^2-的电荷转移跃迁引起的.发光强度随着退火温度的升高而增强,而退火气氛对其影响不大.在SrWO₄膜中掺入银离子Ag⁺和镧离子La³⁺后,不影响其发光特性,但铕离子Eu³⁺的掺入对发光特性有影响.     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光     

Hg1-xCdxTe晶体缺陷的正电子湮没寿命

利用正电子(e⁺)湮没寿命谱实验研究了Hg_1-xCd_xTe晶体样品的空位缺陷.碲溶剂法生长的样品，不论是n型导电还是p型导电都存在大量的Hg空位.经过合适的退火工艺，p型材料转为n型，同时对正电子的俘获效应减小，表现为正电子湮没平均寿命值减小14—17ps.若退火温度高于350℃，正电子湮没寿命值又增大，表明Hg空位浓度增加.得到HgCdTe中正电子的体寿命为τ_b=272ps.根据正电子湮没寿命和电参数的测量结果，得出 关键词：     

Improvement of photoluminescence mechanism of CTA-treated Si-implanted SiO2 films by using RTA

In this paper, a shift in the photoluminescence (PL) peak from blue to near-infrared region was observed in the Si⁺-implanted 400-nm-thick SiO₂ films with the rapid thermal annealing (RTA) method only. As the Si⁺-fluence was 1×10¹⁶ ions/cm², a blue band was observed in the films after RTA at 1050 °C for 5 s in dry-N₂ atmosphere; then, the band shifted from blue to orange upon increasing the holding temperature of RTA to 1250 °C in the films after the isochronal RTA in dry N₂. Furthermore, while the fluence was increased to 3×110¹⁶ ions/cm² and the holding temperature was at the same range between 1050 and 1250 °C, the PL peak occurred between red and near-infrared regions. Although the RTA and conventional thermal annealing (CTA) methods produce a similar mechanism, the CTA method needs a much longer annealing-time and a higher Si⁺-implanted dose than the RTA method for producing the same shift and intensity of PL peak from the as-implanted sample. Therefore, the RTA method can produce the mechanism in the Si⁺-implanted sample with the PL energy between blue and near-infrared band in place of the CTA method.     

自离子辐照对兆伏注P+硅中二次缺陷的影响

用平面透射电子显微术和剖面透射电子显微术以及卢瑟福背散射沟道谱技术研究了兆伏注P⁺硅中的二次缺陷以及自离子辐照对它们的影响.实验结果表明，二次缺陷峰的深度稍大于平均投影射程.实验还发现，用适当能量和剂量的自离子在退火之前辐照兆伏注P⁺硅样品，可以抑制二次缺陷的生成，但如果在退火之后辐照，则会得到相反效果.对此现象的物理原因进行了讨论.另外，还给出了Si⁺，P⁺在硅中形成二次缺陷带的临界剂量，并且对临界剂量与注入能量的关 关键词：     

Hydrogen-enhanced recrystallization in N<Superscript>+</Superscript>-implanted GaAs

The hydrogen-enhanced recrystallization during thermal annealing in N⁺-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N⁺-implanted GaAs wafer. A whole competitive process between H⁺ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6×10¹⁵ to 1.1×10¹⁷ cm^-2. In H⁺ dose region of 2.1×10¹⁶ to 5.4×10¹⁶ cm^-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N⁺-implanted GaAs in the H⁺ dose range from 4.7×10¹⁶ to 8.1×10¹⁶ cm^-2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N⁺-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions. PACS 61.72.Vv; 63.20.Dj; 81.05.Ea     

Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO2/Si substrate

Ultrathin InSb thin films on SiO₂/Si substrates are prepared by radio frequency (RF) magnetron sputtering and rapid thermal annealing (RTA) at 300, 400, and 500℃, respectively. X-ray diffraction (XRD) indicates that InSb film treated by RTA at 500℃, which is higher than its melting temperature (about 485℃), shows a monocrystalline-like feature. High-resolution transmission electron microscopy (HRTEM) micrograph shows that melt recrystallization of InSb film on SiO₂/Si(111) substrate is along the (111) planes. The transmittances of InSb films decrease and the optical band gaps redshift from 0.24 eV to 0.19 eV with annealing temperature increasing from 300℃ to 500℃, which is indicated by Fourier transform infrared spectroscopy (FTIR) measurement. The observed changes demonstrate that RAT is a viable technique for improving characteristics of InSb films, especially the melt-recrystallized film treated by RTA at 500℃.     

The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation

The structural and electrical characteristics of H⁺-implanted SrBi₂Ta₂O₉ (SBT) ferroelectric thin films were investigated by X-ray diffraction analysis and electrical measurements. 25 keV H⁺ with doses ranging from 1 × 10¹⁴/cm² to 3 × 10¹⁵/cm² were implanted into the Sol-Gel prepared SBT ferroelectric thin films. The X-ray diffraction patterns of SBT films show that no difference appears in the crystalline structure of H⁺-implanted SBT films compared with unimplanted films. Ferroelectric properties measurements indicate that both remnant polarization and the coercive electric field of H⁺-implanted SBT films decrease with increasing the implantation dose. The disappearance of ferroelectricity was found in the H⁺-implanted SBT films up to a dose of 3 × 10¹⁵/cm². The leakage current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the H⁺-implanted SBT films were also discussed before and after a recovery process.     

The influence of deep levels on the temperature coefficient of ion-implanted resistive layers in silicon

Ion-implanted high ohmic resistors may exhibit a low temperature coefficient, if the annealing after implantation is not complete. This effect is explained by deep energy levels. Experimental results are presented for B⁺- and Al⁺-implanted resistors.     

Micro-Raman spectroscopic investigation of NiSi films formed on BF<Subscript>2</Subscript><Superscript>+</Superscript>-, B<Superscript>+</Superscript>- and non-implanted (100)Si substrates

The micro-Raman spectroscopic technique was used to investigate vibrational properties of NiSi thin films formed on three different (100)Si substrates: non-implanted, 20 keV BF₂⁺-implanted, and 20 keV B⁺-implanted. Raman measurements were also performed on NiSi powder to identify various phonon modes associated with different selection rules of group theory. It was found that the Raman peaks for NiSi thin films formed on the BF₂⁺-implanted substrate were broader and shifted to lower frequencies compared to those for films formed on the other substrates. The broadening of the Raman peaks for these films, which also exhibit much improved thermal stability, is attributed to the small grains that probably result from the segregation of fluorine to grain boundaries and interfaces. It is further proposed that grain boundary segregation influences the stress in the silicide film, resulting in shifts in phonon peak positions. PACS 78.30.Am; 74.25.Kc; 68.35.Dv; 68.55.Ln; 66.30.Jt     

低剂量磷离子注入快速退火硅中的缺陷研究

本文对低剂量磷离子注入硅经快速热退火后的缺陷特性进行研究。600℃退火就能基本激活注入离子。800℃以下退火样品中的缺陷主要是离子注入形成的辐射损伤缺陷。800℃以上退火样品中存在位错缺陷。位错的形成与离子注入引进的损伤和淬火过程中的热应力有关。1100℃退火样品中的缺陷浓度迅速增大,热应力在硅内部产生大量的滑移位错。 关键词：     

Influence of the annealing technique on the properties of Li ion-conductive Li1.3Al0.3Ti1.7(PO4)3 films

Li_1.3Al_0.3Ti_1.7(PO₄)₃ films were comparatively prepared by rapid thermal annealing (RTA) and conventional furnace annealing(CFA). The phase identification and surface morphology of the prepared films were characterized by X-ray diffraction and scanning electron microscopy. The electrochemical window, ionic conductivity, activation energy, and electronic conductivity were conducted by cyclic voltammetry, electrochemical impedance spectroscopy, and four-probe technique. The results show that the films prepared by RTA and CFA are homogenous and crack-free. The film prepared by RTA shows smaller grains and is denser than the one prepared by CFA. The electrochemical windows of the two films are beyond 2.4 V. The ionic conductivities of the films prepared by RTA and CFA are 2.7?×?10^?6 S cm^?1 and 1.4?×?10^?6 S cm^?1, respectively. The activation energy of the film prepared by RTA is 0.431 eV, which is slightly smaller than the one prepared by CFA. The electronic conductivity of the two films is about 10^?10 S cm^?1.     

Reflectivity modification of polymethylmethacrylate by silicon ion implantation

The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50 keV) Si⁺ beam at fluences in the range from 10¹³ to 10¹⁷ cm⁻² was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si⁺-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated.