Characterization of Zn<Subscript>2</Subscript>SnO<Subscript>4</Subscript> Thin Films Prepared by RF Magnetron Sputtering

Zn₂SnO₄ (ZTO) is a stable semiconductor in ZnO–SnO₂ system and important transparent conducting oxide (TCO) predominantly used in optoelectronic devices. ZTO thin films were prepared by RF magnetron sputtering using Zn₂SnO₄ ceramic target in this paper. The effects of annealing temperatures and oxygen contents on characterization of ZTO thin films were studied. The results show that ZTO thin films prepared by RF magnetron sputtering are amorphous with an optical band gap of 3.22 eV. After annealing at 650°C in Ar atmosphere for 40 min, ZTO films possess a spinel structure with an optical band gap of 3.62 eV. The atomic force microscope (AFM) data of morphology reveals that the surface roughness of films is about 2 nm. The results of energy dispersive spectrometer (EDS) show that the concentration ratio of Zn to Sn is in the range from 1.44 to 1.57. The results of Hall-effect-measurement system reveal that the resistivity of films varies from 102 to 10–1 Ωcm, carrier concentration is about 10¹⁷ cm^–3, and mobility ranges from 10⁰ to 10¹ cm² v^–1 s^–1.     

Cu-supported carbon networks containing SnO<Subscript>2</Subscript> as three-dimensional anodes for lithium-ion batteries

Cu-supported SnO₂@C composite coatings constructed by interconnected carbon-based porous branches were fabricated by annealing Cu foils with films formed by knife coating DMF solution containing SnCl₂, polyacrylonitrile (PAN), and poly(methyl methacrylate) (PMMA) on their surface in vacuum. The carbon-based porous branches consist of amorphous carbon matrices, SnO₂ nanoparticles with a size of 30–100 nm mainly encapsulated inside, and many micropores with a size of 1–5 nm. The three-dimensional (3D) porous network structures of the SnO₂@C composite were achieved by volatilization of PMMA and pyrolysis of SnCl₂. The SnO₂@C composite coatings demonstrate good cyclic performance with a high reversible capacity of 642 mA h g^?1 after 100 cycles at a current density of 50 mA g^?1 without apparent capacity fading during cycling and excellent rate performance with a capacity of 276 mA h g^?1 at a high current density up to 10 A g^?1.     

Structural,photoconductive, thermoelectric and activation energy measurements of V-doped transparent conductive SnO<Subscript>2</Subscript> films fabricated by spray pyrolysis technique

This report investigated the structural, optical and electrical properties of V-doped SnO₂ thin films deposited using spray pyrolysis technique. The SnO₂:V films, with different V-content, were deposited on glass substrates at a substrate temperature of 550°C using an aqueous ethanol solution consisting of tin and vanadium chloride. X-ray diffraction studies showed that the SnO₂:V films were polycrystalline only with tin oxide phases and the preferred orientations are along (1 1 0), (1 0 1), (2 1 1) and (3 0 1) planes. Using Scherrer formula, the grain sizes were estimated to be within the range of 25–36 nm. The variation in sheet resistance and optical direct band gap are functions of vanadium doping concentration. Field emission scanning electron microscopy (FESEM) revealed the surface morphology to be very smooth, yet grainy in nature. Optical transmittance spectra of the films showed high transparency of about ～69–90% in the visible region, decreasing with increase in V-doping. The direct band gap for undoped SnO₂ films was found to be 3.53 eV, while for higher V-doped films it shifted toward lower energies in the range of 3.27–3.53 eV and then increased again to 3.5 eV. The Hall effect and Seebeck studies revealed that the films exhibit n-type conductivity. The thermal activation energy, Seebeck coefficient and maximum of photosensitivity in the films were found to be in the range of 0.02–0.82 eV (in the low-temperature range), 0.15–0.18 mV K^?1 (at T = 350 K) and 0.96–2.84, respectively.     

<Superscript>119</Superscript>Sn CEMS study of Sb doped SnO<Subscript>2</Subscript> film

Sb doped SnO₂ films prepared by DC sputtering and heating were characterized by ¹¹⁹Sn conversion electron Mössbauer spectrometry (CEMS). An asymmetric doublet was observed in the Mössbauer spectra of 1 %, 3 %, and 10 % Sb doped SnO₂ films. The peak ratios of doublets are considered to be due to the columnar crystal growth on the substrate. With the doping level of Sb, both the isomer shift (δ) and the quadrupole splitting (Δ) increased. After annealing, δ increased and Δ decreased for each sample. These results suggest the followings. The electron doping of the SnO₂ lattice by pentavalent Sb induces the increase of the electron density at the Sn^IV nucleus. The annealing process leads to more complete accommodation of the Sb dopant that results in more effective electron doping and therefore increasing isomer shift for tin. Simultaneously, the distortion of the lattice caused by Sb is relaxed and the quadrupole splitting decreases.     

Impedance spectroscopy analysis of Li<Subscript>2</Subscript>SnO<Subscript>3</Subscript>

In this work, Li₂SnO₃ has been synthesized by the sol–gel method using acetates of lithium and tin. Thermogravimetric analysis (TGA) has been applied to the precursor of Li₂SnO₃ to determine the suitable calcination temperature. The formation of the compound calcined at 800 °C for 9 h has been confirmed by X-ray diffraction (XRD) analysis. The Li₂SnO₃ is then pelletized and electrically characterized by using electrochemical impedance spectroscopy (EIS) in the frequency range from 50 Hz to 1 MHz. The complex impedance spectra clearly show the dominating presence of the grain boundary effect on electrical properties whereas the complex modulus plots reveal two semicircles which are due to the grain (bulk) and grain boundary. The spectra of imaginary parts of both impedance and modulus versus frequency show the existence of peaks with the modulus plots exhibiting two peaks that are ascribed to the grain and grain boundary of the material. The peak maximum shifts to higher frequency with an increase in temperature and the broad nature of the peaks indicates the non-Debye nature of Li₂SnO₃. The activation energy associated with the dielectric relaxation obtained from the electrical impedance spectra is 0.67 eV. From the electric modulus spectra, the activation energies related to conductivity relaxation in the grain and grain boundary of Li₂SnO₃ are 0.59 and 0.69 eV, respectively. The conductivity–temperature relationship is thermally assisted and obeys the Arrhenius rule with the activation energy of 0.66 eV. The conduction mechanism of Li₂SnO₃ is via hopping.     

Volume of precursor solution effect on the properties of SnO<Subscript>2</Subscript> thin films prepared by nebulized spray pyrolysis technique

Undoped SnO₂ thin films have been deposited on amorphous glass substrates with different precursor solution volume (10, 15, 20 and 25 ml) using simple and cost-effective nebulized spray pyrolysis technique. The influence of precursor solution on structural, optical, photoluminescence and electrical properties had been studied. The X-ray diffraction spectra prove the polycrystalline nature of SnO₂ with tetragonal structure. All the films show a preferred growth orientation along (110) diffraction plane. The average transmittance of SnO₂ thin films varied between 82 and 75% in the visible as well as IR region. The band gap energy decreases from 3.74 to 3.64 eV corresponding to direct transitions with the precursor solution volume had increased from 10 to 20 ml and then increased as 3.72 eV for 25 ml. SEM pictures demonstrated polyhedrons like grains. EDX confirmed the existence of Sn and O elements in all the prepared SnO₂ thin films. Photoluminescence spectra at room temperature revealed that the four emission bands in all the samples such as sharp dominant peak at 361 nm with shoulder peak at 377 nm (UV region), a broad and low intensity peak at 492 nm (blue region) and 519 nm (green region). The electrical parameters were examined by Hall effect measurements, which demonstrated that the film prepared at 20 ml precursor solution volume possess minimum resistivity 2.76?×?10^?3 Ω-cm with activation energy 0.10 eV and maximum figure of merit 1.54?×?10^?2 (Ω/sq)^?1.     

Synthesis and enhanced acetone gas-sensing performance of ZnSnO<Subscript>3</Subscript>/SnO<Subscript>2</Subscript> hollow urchin nanostructures

A kind of novel ZnSnO₃/SnO₂ hollow urchin nanostructure was synthesized by a facile, eco-friendly two-step liquid-phase process. The structure, morphology, and composition of samples were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and nitrogen adsorption–desorption techniques. The results revealed that many tiny needle-like SnO₂ nanowires with the average diameter of 5 nm uniformly grew on the surface of the ZnSnO₃ hollow microspheres and the ZnSnO₃/SnO₂ hollow urchin nanostructures with different SnO₂ content also were successfully prepared. In order to comprehend the evolution process of the ZnSnO₃/SnO₂ hollow urchin nanostructures, the possible growth mechanism of samples was illustrated via several experiments in different reaction conditions. Moreover, the gas-sensing performance of as-prepared samples was investigated. The results showed that ZnSnO₃/SnO₂ hollow urchin nanostructures with high response to various concentration levels of acetone enhanced selectivity, satisfying repeatability, and good long-term stability for acetone detection. Specially, the 10 wt% ZnSnO₃/SnO₂ hollow urchin nanostructure exhibited the best gas sensitivity (17.03 for 50 ppm acetone) may be a reliable biomarker for the diabetes patients, which could be ascribed to its large specific surface area, complete pore permeability, and increase of chemisorbed oxygen due to the doping of SnO₂.     

Methane sensor based on SnO<Subscript>2</Subscript>/In<Subscript>2</Subscript>O<Subscript>3</Subscript>/TiO<Subscript>2</Subscript> nanostructure

Two sets of samples of SnO₂/In₂O₃/TiO₂ system have been fabricated with different concentrations of component materials. In the first set TiO₂ with rutile structure was used, while in the second set it has the structure of anatase. Thin films (up to 50 nm) of obtained mixtures were deposited. Their sensitivity and selectivity with respect to methane (CH4) were studied. Nanostructure on the basis of 70%SnO₂ — 10%In₂O₃ — 20%TiO₂(anatase) exhibits sufficient sensitivity to methane.     

The study of optical properties of amorphous thin films of mixed oxides In<Subscript>2</Subscript>O<Subscript>3</Subscript>—SnO<Subscript>2</Subscript> system,deposited by co-evaporation

A discussion of optical properties of mixed oxides In₂O₃—SnO₂ system is presented. Film thickness, substrate temperature, composition (in molar %) and annealing have a profound effect on the structure and optical properties of these films. Initially the increase in band gap with the increase of SnO₂ content in In₂O₃ is due to the increase in carrier density as a result of donor electrons from tin. The decrease in band gap above the critical Sn content is caused by the defects formed by Sn atoms, which act as carrier traps rather than electron donors. The increase in band gap with film thickness is caused by the increase in free carrier density which is generated by (i) Sn atom substitution of In atom, giving out one extra electron and (ii) oxygen vacancy acting as two electrons donor. The decrease in band gap with substrate temperature and annealing is due either to the severe deficiency of oxygen, which deteriorate the film properties and reduce the mobility of the carriers, or to the formation of indium species of lower oxidation state (In²⁺).     

Ferromagnetism in Rh-doped SnO<Subscript>2</Subscript> from first-principles calculation

The electronic structures and magnetic properties for Rh-doped SnO₂ crystals have been investigated by density functional theory. The results demonstrate a magnetic moment, which mainly arises from d orbital of Rhodium, of 1.0 μ _B per Rhodium with a little contribution from the Oxygen atoms surrounding it. The Rh-doped SnO₂ system exhibits half-metallic ferromagnetism with high Curie temperature. Several doped configurations calculations show that there are some robust ferromagnetic couplings between these local magnetic moments. The p–d hybridization mechanism is responsible for the predicted ferromagnetism. These results suggest a recipe obtaining promising dilute magnetic semiconductor by doping nonmagnetic elements in SnO₂ matrix.     

Facile and surfactant-free synthesis of SnO<Subscript>2</Subscript>-graphene hybrids as high performance anode for lithium-ion batteries

A facile microwave-assisted ethylene glycol method is developed to synthesize the SnO₂ nanoparticles dispersed on or encapsulated in reduced graphene oxide (SnO₂-rGO) hybrids. The morphology, structure, and composition of SnO₂-rGO are investigated by scanning electron microscopy, transmission electron microscope, thermo-gravimetric analyzer, X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy. The electrochemical performance of SnO₂-rGO as anode materials for lithium-ion batteries was tested by cyclic voltammetry, galvanostatic charge–discharge cycling, and rate capability test. It is found that the SnO₂ nanoparticles with a uniform distribution have p-type doping effect with rGO nanosheets. The as-prepared SnO₂-rGO hybrids exhibit remarkable lithium storage capacity and cycling stability, and the possible mechanism involved is also discussed. Their capacity is 1222 mAhg^?1 in the first cycle and maintains at 700 mAhg^?1 after 100 cycles. This good performance can be mainly attributed to the unique nanostructure, good structure stability, more space for volume expansion of SnO₂, and mass transfer of Li⁺ during cycling.     

Self-propagating high-temperature synthesis and magnetic features of Fe-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> granulated films

The classical solid-phase reaction between Fe₂O₃ and Al layers in thin films is initiated. It is shown that, in the reaction products, Fe granulated films are formed in the Al₂O₃ nonconducting matrix. Analysis of the reaction equation demonstrates that the volume fraction of iron in the granulated films is less than the percolation threshold. This determines the magnetic properties of iron clusters in a superparamagnetic state. It is assumed that the nanocrystalline microstructure exists in thin films after solid-phase reactions proceeding under conditions of self-propagating high-temperature synthesis.     

Effect of thermal treatment on the electrotransport properties of thin-film In<Subscript>2</Subscript>O<Subscript>3</Subscript>, ZnO materials and the multilayer (In<Subscript>2</Subscript>O<Subscript>3</Subscript>/ZnO)<Subscript>83</Subscript> heterostructure

The effect heat treatment has on the electrotransport mechanisms in films of ZnO and In₂O₃, and in a multilayer (In₂O₃/ZnO)₈₃ structure obtained via ion-beam sputtering, is studied. It is shown that there is a mechanism of weak electron localization in the In₂O₃ and (In₂O₃/ZnO)₈₃ samples. The relaxation processes that occur during the heat treatment of In₂O₃ films are found to increase the length of elastic electron scattering, but to reduce this parameter in multilayer heterostructures.     

Photoinduced processes in thin films of MoO<Subscript>3</Subscript> and mixed V<Subscript>2</Subscript>O<Subscript>5</Subscript>: MoO<Subscript>3</Subscript> oxides

Photoinduced processes in thin films of MoO₃ and mixed V₂O₅: MoO₃ oxides prepared by polycondensation of the respective oxoacids under solvothermal conditions are studied using Raman spectroscopy, ESR, and AFM. It is shown that, under UV irradiation, the photoinduced polycondensation occurs in the oxide films, leading to the formation of the oxygen bridges, an effect that opens up the possibility of developing a new photolithographic process.     

Biotemplate fabrication of SnO<Subscript>2</Subscript> nanotubular materials by a sonochemical method for gas sensors

A sonochemical method is developed to fabricate SnO₂ nanotubular materials from biological substances (here, it is cotton). The cotton fibers in SnCl₂ solution were first treated with ultrasonic waves in air, followed by calcinations to give nanotubular materials that faithfully retain the initial cotton morphology. The microstructure and morphology of the obtained SnO₂ nanotubules were characterized by the combination of field-emission scanning electron microscope (FE-SEM), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR), X-ray diffraction (XRD), and N₂ adsorption/desorption measurements. The thermal behavior and crystalline properties were examined in the temperature range of 450–700 °C. The nanocrystals composing of SnO₂ nanotubules were estimated about 8.5, 13.2, and 14.2 nm corresponding to calcination temperatures of 450, 550, and 700 °C, respectively. The sensor performance of biomorphic SnO₂ nanotubules calcined at 700 °C was investigated in the atmosphere of ethanol, formaldehyde, carbinol, carbon monoxide, hydrogen, ammonia, and acetone, respectively, which exhibited a good selectivity for acetone at a working temperature of 350 °C. The sensitivity to 20 ppm acetone, S, was 6.4 at 350 °C with rapid response and recovery (around 10–9 s). These behaviors were well explained in relation to the morphology of the nanotubules thus produced.     

Raman scattering spectroscopy of inclusions of carbon in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films and its solid solutions with HfO<Subscript>2</Subscript>

We apply Raman scattering spectroscopy to study the nature of carbon inclusions in Al₂O₃ and (HfO₂) _x (Al₂O₃)_{1 ? x} films deposited using volatile complex compounds. Raman spectra of the films under investigation contain D and G vibrational modes, which indicate that carbon clusters of the sp ² configuration tend to form in the films. We estimate the size of clusters from the integrated intensity ratio I _D /I _G and find it to be in the range of 14–20 Å. The content of hydrogen in carbon clusters is calculated from the height of the photoluminescence pedestal and is found to vary from 14 to 30 at % depending on the regime of the film’s synthesis.     

Design and assembly of ternary Pt/Re/SnO<Subscript>2</Subscript> NPs by controlling the zeta potential of individual Pt,Re, and SnO<Subscript>2</Subscript> NPs

In this study Pt, Re, and SnO₂ nanoparticles (NPs) were combined in a controlled manner into binary and ternary combinations for a possible application for ethanol oxidation. For this purpose, zeta potentials as a function of the pH of the individual NPs solutions were measured. In order to successfully combine the NPs into Pt/SnO₂ and Re/SnO₂ NPs, the solutions were mixed together at a pH guaranteeing opposite zeta potentials of the metal and oxide NPs. The individually synthesized NPs and their binary/ternary combinations were characterized by Fourier transform infrared spectroscopy (FTIR) and scanning transmission electron microscopy (STEM) combined with energy dispersive X-ray spectroscopy (EDS) analysis. FTIR and XPS spectroscopy showed that the individually synthesized Pt and Re NPs are metallic and the Sn component was oxidized to SnO₂. STEM showed that all NPs are well crystallized and the sizes of the Pt, Re, and SnO₂ NPs were 2.2, 1.0, and 3.4 nm, respectively. Moreover, EDS analysis confirmed the successful formation of binary Pt/SnO₂ and Re/SnO₂ NP, as well as ternary Pt/Re/SnO₂ NP combinations. This study shows that by controlling the zeta potential of individual metal and oxide NPs, it is possible to assemble them into binary and ternary combinations.

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Structure,the lattice dynamic,and the dielectric characteristics of Sr<Subscript>0.5</Subscript>Ba<Subscript>0.5</Subscript>Nb<Subscript>2</Subscript>O<Subscript>6</Subscript> films

Solid solution Sr_0.5Ba_0.5Nb₂O₆ films have been synthesized on a (111)Pt/(001)Si substrate by rf deposition in an oxygen atmosphere. The depolarized Raman spectra, the structure, and the dielectric characteristics of the films have been studied over a wide temperature range. It is found that the films were singlephase, had the tetragonal tungsten bronze structure, and had a pronounced axial texture with axis 001 directed perpendicular to the substrate surface. It is shown that the film material undergoes a diffuse phase transition to the state of a relaxor ferroelectric in the temperature range 300–425 K. Possible reasons of the regularities observed are discussed.     

Influence of supporting electrolytes on the structure of electrodeposited SnO<Subscript>2</Subscript> thin films for energy storage applications

Different SnO₂ nanostructures (SnO₂Ns) were directly electrodeposited on the surface of anodized copper (Cu) substrates via the potentiostatic electrodeposition method with addition of supporting electrolytes. The effects of the supporting electrolytes and the electrodeposition parameters on the evolution of nanostructures and on the electrochemical properties of the SnO₂Ns were systematically investigated using field emission scanning electron microscope (FESEM) and electrochemical methods including cyclic voltammetry (CV) and chronoamperometry (CA). The results confirmed that SnO₂Ns exhibit alloying/de-alloying reactions with Li⁺ ions versus Ag/AgCl in aqueous electrolyte solution (LiOH·H₂O and Li₂CO₃). The super capacitor performance of the SnO₂Ns was investigated in 0.5-M Na₂SO₄ aqueous solution, and the highest specific capacitance of 110 Fg^?1 at a scan rate of 5 mV s^?1 was obtained for SnO₂ microspheres made up of nanocubes. Our study shows that supporting electrolytes and electrodeposition parameters play the significant role in the growth of SnO₂Ns and its electrochemical properties.     

Antiferromagnetic interactions in Er-doped SnO<Subscript>2</Subscript> DMS nanoparticles

Diluted magnetic semiconductor (DMS) nanoparticles of Sn_1−x Er _x O₂ (x = 0.0, 0.02, 0.04, and 0.1) were prepared by sol–gel method. The X-ray diffraction patterns showed SnO₂ rutile structure for all samples with no impurity peaks. The decrease in crystallite size with Er concentration was confirmed from TEM measurements (from 12 to 4 nm). The UV–Visible absorption spectra of Er-doped SnO₂ nanoparticles showed blue shift in band gap compared to undoped SnO₂. The electron spin resonance analysis of Er-doped SnO₂ nanoparticles indicate Er³⁺ in a rutile lattice and also decrease in intensity with Er concentration above x = 0.02. Temperature-dependent magnetization studies and the inverse susceptibility curves indicated increased antiferromagnetic interaction with Er concentration.