Crystallization kinetics and Avrami index of Sb-doped Se–Te–Sn chalcogenide glasses

Bulk amorphous samples of Sb-substituted Se_78?xTe₂₀Sn₂Sb_x (0 < x < 6) have been prepared using melt quench technique. The structure of Se_78?xTe₂₀Sn₂Sb_x (x = 0, 2, 4, 6) glassy alloys has been investigated using X-ray diffraction technique. Calorimetric studies of the prepared samples have been performed under non-isothermal conditions using differential scanning calorimetry (DSC) and glass transition temperature as well as crystallization temperature has been evaluated using DSC scans. The activation energy of crystallization kinetics (E_c) has been determined using model-free approaches such as Kissinger, Ozawa, Tang and Starink methods. The Avrami index (n) and frequency factor (K_o) have been calculated by Matusita and Augis–Benett method.     

Characterization of new quaternary chalcogenide As–Ge–Se–Sb thin films

This paper reports the effect of replacement of selenium by antimony on the optical gap and some other physical parameters of new quaternary chalcogenide As₁₄Ge₁₄Se_{72? x} Sb _x (where x = 3, 6, 9, 12 and 15 at%) thin films. Thin films with thickness 200–220 nm of As₁₄Ge₁₄Se_{72? x} Sb _x were prepared by thermal evaporation of the bulk samples. Increasing antimony content was found to affect the average heat of atomization, the average coordination number, number of constraints and cohesive energy of the As₁₄Ge₁₄Se_{72 ?x} Sb _x alloys. Optical absorption measurements showed that the fundamental absorption edge is a function of composition. Optical absorption is due to allowed, non-direct transition and the energy gap decreases with the increasing antimony content. The chemical bond approach has been applied successfully to interpret the decrease in the optical gap with increasing antimony content.     

Effect of replacement of Se by S on structural and physical properties of Ge–Sb–As–Se–S chalcogenide glasses

In the present study, the structural and opto-mechanical properties of Ge–Sb–As–Se–S chalcogenide glasses have been investigated. For this purpose, different bulk glasses of Ge₂₀Sb₅As₁₅Se_60?xS_x (0 ≤ x≤50) were prepared by conventional melt quenching technique in quartz ampoule and different characteristics of prepared glasses such as glass transition temperature, density, hardness, transmittance, optical band gap energy and refractive index were determined. The value of hardness and glass transition temperature of prepared glasses were found to increase with increasing the sulfur content as a result of formation of GeS₄ tetrahedral units and increasing the network connectivity and average bonding energy. The optical energy gap (according to Tauc’s relation), transmittance and refractive index of prepared glasses are in direct relation with sulfur content. In this study, the highest value of transmittance (about 70%) and lowest value of refractive index (2–2.3) was achieved in Ge₂₀Sb₅As₁₅Se₄₀S₂₀ and Ge₂₀Sb₅As₁₅Se₁₀S₅₀ glasses, respectively.     

Influence of the selenium content on thermo-mechanical and optical properties of Ge–Ga–Sb–S chalcogenide glasses

A number of Ge₁₇Ga₄Sb₁₀S_69−xSe_x (x = 0, 15, 30, 45, 60, and 69) chalcogenide glasses have been synthesized by a melt-quenching method to investigate the effect of the Se content on thermo-mechanical and optical properties of these glasses. While it was found that the glass transition temperature (T_g) decreases from 261 to 174 °C with increasing Se contents, crystallization temperature (T_c) peak only be observed in glasses with Se content of x = 45. It was evident from the measurements of structural and physical properties that changes of the glass network bring an apparent impact on the glass properties. Also, the substitution of Se for S in Ge–Ga–Sb glasses can significantly improve the thermal stability against crystallization and broaden the infrared transmission region.     

Structural,optical and electrical properties of laser irradiated Pb doped Ga–Se chalcogenide thin films

Using the Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser, we had irradiated the amorphous thin films of Ga₁₀Se₈₁Pb₉ chalcogenide glass and the results have been discussed in terms of the structural aspects of Ga₁₀Se₈₁Pb₉ glass. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap. The X-ray structural characterization revealed the amorphous nature of as prepared films and polycrystalline nature of the laser irradiated films. The optical band gap of these thin films is measured by using the absorption spectra as a function of photon energy in the wavelength region 400–1200 nm. It is found that the optical band gap decreases while the absorption coefficient increases with increasing the irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase in exposure time. The dc conductivities and activation energies of these thin films are measured in temperature range 303–403 K. It has been found that the activation energy in Ga₁₀Se₈₁Pb₉ chalcogenide thin films decreases whereas the dc conductivity increases at each temperature by increasing the irradiation time.     

Effect of composition and light intensity on the electrical properties of Sn–Sb–Se glassy films

Electrical and photoelectrical measurements have been performed on Sn_xSb₂₀Se_70-x (8≤x≤16) glassy films. The dc activation energy, optical gap and photoconduction parameters show a typical variation near x=10 composition indicating the occurrence of a rigidity percolation threshold in the present system. The photosensitivity increases with the increase in Sn content up to x=14 and an abrupt decrease for x=16 composition. Negative photoconductivity region have been observed in the higher temperature side for samples with x=10 and 16. This system belongs to the type II category of photoconductors. The results are explained on the basis of a change in the density of localized states present in the mobility gap with the change in the composition. PACS 71.20.Nr; 72.20.-I; 78.66.Jg; 81.05.Gc; 73.50.Pz     

Photoinduced effects on the optical constants of a-Ge–Se–Bi chalcogenide glassy thin films

In addition to the conversion from p-type to n-type conductivity that occurs in Ge–Se–Bi thin films when Bi is incorporated in a certain concentration. We found that, when these films were illuminated to UV light, after being annealed at glass transition temperature T _g, the photobleaching is dominant for Ge₂₀Se_80?x Bi _x (x=0, 2.5, and 5 at.%), while for Ge₂₀Se_72.5Bi_7.5 photodarkening is dominant. The photoinduced changes in the optical constants were studied. The refractive index (n) has been analysed according to the Wwmple–DiDominico single oscillator model and the values of E _o and E _d for exposed and unexposed films were determined, respectively. The photostructural effects were discussed in the light of single–double well model proposed by Tanaka and chemical bond approach.     

On the variation of activation energy for amorphous–crystallization phase transition in Se–Te–Sn chalcogenide glasses using iso-conversional analysis

In this paper, the variation of activation energy of amorphous–crystallization phase transition of as-Se_85–xTe₁₅Sn_x (x = 2, 4 and 6) chalcogenide glasses is investigated using iso-conversional analysis under non-isothermal conditions using differential scanning calorimetric (DSC) technique. The study is based on the variation of activation energy of crystallization with the degree of conversion and hence with temperature. The three iso-conversional methods of Kissinger–Akahira–Sunose (KAS), Ozawa–Flynn–Wall (OFW) and Friedman are used to deduce the variation of activation energy with the extent of conversion and also with temperature. The KAS and OFW methods give the similar values while the Friedman method gives lower values of activation energy of crystallization for the investigated chalcogenide glasses.     

Bulk and surface properties of liquid Sb–Sn alloys

The mixing behaviour of liquid Sb–Sn alloys has been described in terms of energetics and structure through the study of their thermodynamic, surface, transport and structural properties by using the Complex Formation Model (CFM) in the weak interaction approximation and by postulating SbSn chemical complexes as energetically favoured. The new Sb–Sn surface tension experimental data, obtained by the pinned drop method at temperatures ranging from 513 to 1023 K, have been analysed in the framework of the CFM and compared with the calculated values as well as with the corresponding literature data. The structural characteristics of Sb–Sn melts are described by the two microscopic functions, i.e. the concentration fluctuations in the long-wavelength limit and the Warren–Cowley short-range order parameter.     

Thermal stability and crystallization kinetics of Ge–Se–Cd glasses

The effect is reported of varying cadmium concentration on the glass transition, thermal stability and crystallization kinetics of Ge₂₀Se_{80? x} Cd _x (x = 2.5, 5, 7.5 and 10 at. %) glasses. Differential scanning calorimetry results under non-isothermal conditions for the studied glasses are reported and discussed. The values of the glass transition temperature (T_g ) and the peak temperature of crystallization (T_p ) were found to be dependent on heating rate and Cd content. From the heating rate dependence of T_g and T_p , the values of the activation energy for glass transition (E_g ) and the activation energy for crystallization (E_c ) were evaluated and their composition dependence discussed. The thermal stability of the glasses was evaluated using various thermal stability criteria such as ΔT, H_g and S. The stability calculations emphasize that the thermal stability decreases with increasing Cd content.     

Electrical and thermal properties of chalcogenide glass system Se75Ge25−x Sb x

The dc and thermal conductivities of five different compositions of the chalcogenide glass system Se₇₅Ge_25–x Sb _x have been studied in a temperature range below T _g. The dc conductivity results indicate that each composition has a single activation energy in the considered temperature range. The coefficient of thermal conductivity increased linearly with temperature below T _g for the compositions investigated. The increase of Sb content in the chalcogenide glass system leads to an increased coefficient of electrical conductivity , an increased coefficient of thermal conductivity , and to a decreased activation energy E and pre-exponential factor ₀. The observed compositional dependencies of and E have been correlated with the increase of weak bond density and the decrease of covalent bond density in the structure of the compositions investigated with increasing Sb content at the expense of Ge content. The decrease in ₀ and the increase in has been, respectively, correlated with the decrease in mobility and the increase in phonon velocity.     

Phonon Thermal Conductivity and Phase Equilibria of Fractal Bi–Sb Nanoparticles

Technical Physics - The thermal conductivity component associated with lattice vibrations is one of the quantities determining the thermoelectric activity of a material. We have simulated the...     

Determination of the thickness and optical constants of amorphous Ge–Se–Bi thin films

The effect of varying bismuth concentration on the optical constants of amorphous Ge₂₀Se_{80? x} Bi _x (where x = 0, 3, 6, 9 and 12 at%) thin films prepared by thermal evaporation has been investigated. The transmission spectra T(λ) of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. An analysis proposed by Swanepoel [J. Phys. E: Sci. Instrum. 16 (1983) p.1214], based on the use of the maxima and minima of the interference fringes, was applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Increasing bismuth content was found to affect the refractive index and extinction coefficient of the Ge₂₀Se_{80? x} Bi _x films. Optical absorption measurements show that the fundamental absorption edge is a function of composition. With increasing bismuth content, the refractive index increases while the optical band gap decreases.