Thermoluminescence of corundum containing anion defects following ultraviolet laser and x irradiation

The thermoluminescence of single crystals of corundum containing anion defects following x-ray and laser excitation is investigated. Its features in the luminescence bands of F, F⁺, and Cr³⁺ centers are studied. Synchronous measurements of the thermoluminescence and thermally stimulated exoelectron emission are performed by the fractional glow technique following x-ray and laser excitation of the samples. It follows from the results obtained that several traps are active in the temperature range of the principal dosimetric peak (400–500 K). The spectral sensitivity curve contains maxima corresponding to absorption bands of F, F⁺, and Al _i ⁺ centers. A possible mechanism for the recombination luminescence of F centers is discussed. It is found that the material exhibits high sensitivity to small doses of ultraviolet laser radiation. Zh. Tekh. Fiz. 67, 72–76 (July 1997)     

Recombination processes in europium-doped cadmium iodide crystals

Results of comprehensive research into optical and luminescent-kinetic characteristics of europium-doped cadmium iodide crystals excited by nitrogen laser radiation, α-particles, and x-rays are presented. Crystals under study have been grown by the Bridgman–Stockbarger method. The doping EuCl₃ admixture was introduced into the charge in quantities of about 0.05 and 1.0 mol%. Impurity absorption detected in the near-edge region of the crystals is interpreted as part of the Eu²⁺ ion long-wavelength band associated with f–d-transitions. The cation impurity and matrix defects in CdI₂:Eu²⁺ crystals create complex centers responsible for emission with a maximum in the 580–600-nm region. The short component in the luminescence decay kinetics of weakly-doped crystal excited by α-particles and x-ray photons is due to the exciton emission characteristic of CdI₂. The slow component in the scintillation pulse results from recombination of charge carriers followed by creation of exciton-like states on the defect-impurity centers. Laser or x-ray excitation induces light-sum accumulation on the trapping levels at a depth of 0.2–0.6 eV that is mainly related to matrix microdefects. Trapping centers associated with the chlorine impurity are observed in the heavily-doped crystal. Photostimulated luminescence at 85 K arising at the electron stage of the recombination process is caused by recombination of electrons released from F-type centers with holes localized near the activator. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 3, pp. 358–364, May–June, 2009.     

Spectroscopic characteristics of anionic centers in α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> crystals bombarded by Cu<Superscript>+</Superscript> and Ti<Superscript>+</Superscript> ions

We have studied the effect of bombardment by Cu⁺ and Ti⁺ ions with energy 30 keV on the optical absorption and luminescence of F centers in oxygen-deficient aluminum oxide. We have shown that in the induced optical absorption spectra there are six components of gaussian shape, which can be assigned to absorption bands of F⁺, F², and F₂⁺ centers. We have established that bombardment of the samples by ion beams has a weak effect on the thermoluminescence parameters in the 3.0 eV and 2.4 eV bands, while in the 3.8 eV luminescence band for F⁺ centers, the thermoluminescent response increases considerably. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 422–424, May–June, 2008.     

Luminescence excitation spectra and characteristics of luminescence centers with overlapping absorption bands

For an ensemble of different types of luminescence centers with overlapping absorption bands, with no restrictions on the optical densities, we have obtained relations describing the luminescence excitation spectra for each type of center. We consider transformations of the relations in some limiting cases. We suggest a procedure for using the equations obtained to determine the characteristics of the luminescence centers. Some of these procedures have been experimentally implemented in study of intrinsic radiation color centers in lithium fluoride crystals. We have determined the ratios of the luminescence quantum yields for F₂ and F₃⁺ color centers, and we have observed that a major role is played by nonradiative transitions in deactivation of the first excited singlet state of F₃⁺ centers. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 365–371, May–June, 2008.     

Spatial structures based on color centers created by electrons in lithium fluoride crystals: Absorption and luminescence characteristics

We have shown that in spatial structures based on color centers created by electrons in a lithium fluoride crystal, the distances between centers reach 1.6 nm and 3.6 nm for F₁ and F₂ centers respectively. This suggests considerable potential opportunities for using electron technology to form structures in the crystals with spatial resolution of such an order of magnitude. We measured the decrease in fluorine content on the irradiated surface of the crystal. We found the concentrations of F₁, F₂, F₃⁺, F₃(R₂), and F₄(N₁) centers. We established that the specific characteristics of color center formation by electrons leads to an increase in the efficiency of creation of F₃ and F₄ centers. We determined the decrease in the average luminescence lifetimes of F₂ and F₃⁺ centers as a result of concentration quenching. We observed distortion of the luminescence contour for F₂ centers as a result of absorption of its short-wavelength portion by other centers and emission of radiation by the latter in its long-wavelength portion. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 1, pp. 102–110, January–February, 2008.     

Creation of excitons and defects in a CsI crystal during pulsed electron irradiation

Data presented on the influence of the temperature in the range 80–650 K on the spectral kinetics of the luminescence and transient absorption of unactivated CsI crystals under irradiation by pulsed electron beams (〈E〉=0.25 MeV, t _1/2=15 ns, j=20 A/cm²). The structure of the short-wavelength part of the transient absorption spectra at T=80–350 K exhibits features, suggesting that the nuclear subsystem of self-trapped excitons (STE’s) transforms repeatedly during their lifetime until their radiative annihilation at T⩾80 K, alternately occupying di-and trihalide ionic configurations. It is established that a temperature-induced increase in the yield of radiation defects, as well as F and H color centers, and quenching of the UV luminescence in CsI occur in the same temperature region (above 350 K) and are characterized by identical thermal activation energies (∼0.22 eV). It is postulated that the STE’s in a CsI crystal can have a trihalide ionic core with either an on-center or off-center configuration; the high-temperature luminescence of CsI crystals is associated with the radiative annihilation of an off-center STE with the structure (I⁻(I⁰I⁻ e ⁻))*. Fiz. Tverd. Tela (St. Petersburg) 40, 640–644 (April 1998)     

Slow components of the emission decay in fluoride crystals doped with Ce3+

Spatially separated defects created by photons with energies 6–8 eV in alkali-earth fluoride crystals doped with cerium are investigated with the help of thermoluminescence. Measuring the spectra of creation of V_k and H peaks of thermostimulated luminescence inBaF ₂:Ce³⁺. we demonstrate that photons with energies higher than 6eV induce H centers (self-trapped holes captured by interstitialF ions), whereas the formation of self-trapped holes begins on exposure to photons with energies greater than 7 eV. The influence of photoionization on theCe ³⁺ luminescence inBaF ₂, SrF₂, CaF₂, andCeF ₃ crystals is investigated in the range of photon energies 4–8 eV. An exponentialCe ³⁺-emisson decay was observed for excitation energy lying in the range 4–6 eV. Slow and fast decay components were observed under excitation by photons with energies higher than 6 eV. We believe that the slow and fast components are due to the tunnel recombination of trapped electrons with hole centers. A. P. Vinogradov Institute of Geochemistry of the Siberian Branch of the Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 43–49, March, 2000.     

Thermal- and photo-induced transformations of luminescence centers in αd-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> anion-defective crystals

The thermal- and photo-induced transformations of luminescence centers in anion-defective crystals of α-Al₂O₃ have been investigated. It has been found that the exposure of crystals to ultraviolet light at temperatures in the range 50–900°C leads to substantial changes in their thermoluminescence and radioluminescence spectra. According to the optical absorption and photoluminescence data, the detected F-type centers have been identified and the temperature ranges of the F → F ⁺ → F ₂ transformations and their possible mechanisms have been determined. The special attention has been drawn to the detailed similarity in the formation of complex F ₂-type centers in the initially perfect α-Al₂O₃ crystals irradiated with fast neutrons and in the studied anion-defective crystals.     

Dislocation spectroscopy of crystals

A new method of studying the energy characteristics of dislocations is proposed, which is based on the investigation of the interaction of moving dislocations with purposefully introduced electronic and hole centers. A study has been made of KCl, NaCl, KBr, LiF, and KI alkali halide crystals containing electronic F and hole V _K and Me ⁺⁺ (Cu⁺⁺, Ag⁺⁺, Tl⁺⁺, In⁺⁺) centers. Investigation of the temperature dependence of the dislocation interaction with the F centers permitted determination of the position of the dislocation-induced electronic band (DEB) in the band diagram of the crystal. In KCl, the DEB is separated by ≈2.2 eV from the conduction-band minimum. It is shown that dislocations transport holes from the centers lying below the dislocation-induced hole band (DHB) (X ⁺, In⁺⁺, Tl⁺⁺, V _K) to those above the DHB (the Cu⁺ and Ag⁺ centers). Such a process is temperature independent. The DHB position in the crystal band diagram has been determined; in KCl it is separated by ≈1.6 eV from the valence-band top. The effective radii of the dislocation interaction with the electronic F and hole X ⁺, V _K, and Tl⁺⁺ centers have been found. Fiz. Tverd. Tela (St. Petersburg) 41, 2139–2146 (December 1999)     

Thermally stimulated recombination processes and luminescence in Li<Subscript>6</Subscript>(Y,Gd,Eu)(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> crystals

The thermally stimulated recombination processes and luminescence in crystals of the lithium borate family Li₆(Y,Gd,Eu)(BO₃)₃ have been investigated. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence spectra), the temperature dependences of the X-ray luminescence intensity, and the glow curves for the Li₆Gd(BO₃)₃, Li₆Eu(BO₃)₃, Li₆Y_0.5Gd_0.5(BO₃)₃: Eu, and Li₆Gd(BO₃)₃: Eu compounds have been measured in the temperature range 90–500 K. In the X-ray luminescence spectra, the band at 312 nm corresponding to the ⁶ P _J → ⁸ S _7/2 transitions in the Gd³⁺ ion and the group of lines at 580–700 nm due to the ⁵ D ₀ → ⁷ F _J transitions (J = 0–4) in the Eu³⁺ ion are dominant. For undoped crystals, the X-ray luminescence intensity of these bands increases by a factor of 15 with a change in the temperature from 100 to 400 K. The possible mechanisms providing the observed temperature dependence of the intensity and their relation to the specific features of energy transfer of electronic excitations in these crystals have been discussed. It has been revealed that the glow curves for all the crystals under investigation exhibit the main complex peak with the maximum at a temperature of 110–160 K and a number of weaker peaks with the composition and structure dependent on the crystal type. The nature of shallow trapping centers responsible for the thermally stimulated luminescence in the range below room temperature and their relation to defects in the lithium cation sublattice have been analyzed.     

Recombination luminescence of CaSO4:Tb3+ and CaSO4:Gd3+phosphors

A comparative study of the excitation of luminescence by VUV radiation as well as of thermally and photostimulated luminescence has been carried out for CaSO₄:Tb³⁺ and CaSO₄:Gd³⁺ phosphors, where Na⁺ or F⁻ ions are used for charge compensation. The distinction in hole processes for the phosphors with Na⁺ or F⁻ compensators is determined by the differing thermal stability of the holes localized at/near Tb³⁺Na⁺ and Gd³⁺Na⁺ (up to 100–160 K) or at/near Tb³⁺F⁻ V _Ca and Gd³⁺F⁻ V _Ca centers involving also a cation vacancy (up to 400–550 K). Tunnel luminescence in the pairs of localized electrons and holes nearby Tb³⁺ or Gd³⁺ has been detected. The mechanisms of electron-hole, hole-electron and tunnel recombination luminescence as well as a subsequent released energy transfer to RE³⁺ ions are considered.     

Energy transfer in Gd2SiO5-Ce, Y2SiO5-Ce, and Be2La2O5-Ce crystals during selective VUV and core excitation

Luminescence vacuum ultraviolet time-resolved spectroscopy is used to study electronic excitations and energy transfer in Ce³⁺-doped crystals of gadolinium and yttrium oxyorthosilicates excited by synchrotron radiation in the vacuum ultraviolet (4–30 eV) and x-ray (50–200 eV) regions. At T = 10 K, both crystals exhibit intrinsic electronic excitations whose radiative relaxation occurs through fast (τ = 3 ns) and slow (microsecond) channels, which correspond to two possible types of self-trapped excitons. A comparison of the relaxation of above-edge and core electronic excitations in the Ce³⁺-doped crystals of gadolinium oxyorthosilicate and lanthanum beryllate indicates that the nature of the charge carriers involved in the recombination processes of energy transfer to luminescence centers is diverse. __________ Translated from Fizika Tverdogo Tela, Vol. 47, No. 8, 2005, pp. 1435–1439. Original Russian Text Copyright ? 2005 by Ivanov, Pustovarov, Kirm, Shlygin, Shirinskii.     

Luminescence of short-lived color centers induced in LiF crystals by a pulsed microwave discharge

A new phenomenon — intense luminescence of noncolored lithium fluoride (LiF) crystals excited by an electrodeless pulsed microwave discharge at the prebreakdown stage of development — is observed. This luminescence consists of the luminescence of short-lived aggregate F₂ and F ₃ ⁺ color centers at room temperature. It is shown that the density of short-lived color centers induced in the surface layer of LiF crystals by a microsecond microwave discharge reaches values of ∼10¹⁹−10²⁰ cm⁻³. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 163–167 (10 August 1997)     

Thermally and photostimulated recombination processes in PbWO4 crystals at low temperatures

We have studied thermally and photostimulated recombination processes in PbWO₄ crystals in the temperature interval 90–295 K. We have shown that after x-ray excitation of the crystal at 90 K, the thermally stimulated luminescence curve shows a relatively intense peak at 110 K and weak peaks at about 173, 191, and 232 K. Exposure of the PbWO₄ crystal to IR radiation after excitation by x-ray photons leads to the appearance of photostimulated flash luminescence, a significant decrease in the intensity of the 110 K peak, and a shift of that peak to the 116 K region. But long-wavelength illumination has less of an effect on the intensity and position of the higher temperature peaks. It is assumed that F⁻ centers are formed in the PbWO₄ crystal at 90 K during x-ray exposure. The thermal light sum released by IR illumination in the temperature region 90–150 K has a maximum at ≈108 K. The nature of this maximum is connected with the complex centers [Pb³⁺ + (WO_3-F⁻)]. Optical and thermal degradation of these centers leads to the appearance of emission in the green region of the localized exciton spectrum.     

Optical absorption behavior of Tl<Superscript>+</Superscript> DOPED Rb(Br<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>I<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>) system

The optical absorption behavior of Tl⁺ doped Rb(Br_1–x I _x ) mixed crystals (with x = 0.00, 0.05, and 0.10) grown under vacuum by slow cooling from the melt has been studied. Absorption spectra of the mixed crystals recorded at room temperature showed that the characteristic A-absorption band of Tl⁺ ions in the Rb(Br_1–x I _x ) system (0.1 mol. %) with x = 0.00 (i.e., RbBr:Tl⁺) broadened with the iodine content towards the low energy side. Changes in the absorption spectra of the mixed crystals are due to creation of some complex centers involving Tl⁺, Br^–, and I^- ions with energy levels inside the band gap while forming the mixed crystal. The absorption spectra of gamma-irradiated mixed crystals showed the F-band, which shifted towards the low energy side due to the existence of iodine ions in the mixed crystals.     

External-field-induced formation of stabilized F 2 + centers in colored LiF crystals

The production of complexes, which are thermally stable at room temperature, with F ₂ ⁺ centers in radiation-colored LiF crystals by the combined action of different fields is investigated. The half-life of these laser centers produced by, specifically, hard UV radiation and a shock wave increased by almost two orders of magnitude. Fiz. Tverd. Tela (St. Petersburg) 40, 2044–2050 (November 1998)     

Time-resolved luminescence spectroscopy of pure and doped with Ce3+ ions SrAlF5 crystals

The results of a study of time-resolved photoluminescence (PL) and energy transfer in both pure and doped with Ce³⁺ ions SrAlF₅ (SAF) single crystals are presented. The time-resolved and steady-state PL spectra in the energy range of 1.5–6.0 eV, the PL excitation spectra and the reflectivity in the energy range of 3.7–21 eV, as well as the PL decay kinetics were measured at 8.8 and 295 K. The lattice defects were revealed in the low temperature PL spectra (emission bands at 2.9 and 4.5 eV) in the undoped SAF crystals. The luminescence spectra of the doped Ce³⁺:SAF crystals demonstrate a new selective emission bands in the range of 3.7–4.5 eV with the exponential decay kinetics (τ ≈ 60 ns at X-ray excitation). These bands correspond to the d-f transitions in Ce³⁺ ions, which occupy nonequivalent sites in the crystal lattice.     

Photocontrolled magnetic resonance plasticity of γ-irradiated KCl:Fe crystals

A photocontrolled resonance decrease in microhardness, which is due to the application of mutually perpendicular static and microwave fields, in γ-irradiated KCl:Fe crystals has been revealed. It has been found that the magnetic plasticity of unirradiated γ-KCl:Fe crystals is due to the resonance effect of magnetic fields on two types of impurity centers: first, centers containing Fe²⁺-ν _c ion-vacancy pairs and, second, centers containing Fe⁺ ions. The illumination of γ-KCl:Fe crystals with F-light (with a wavelength of λ = 500–600 nm) is accompanied by rearrangement of the spectrum of electron paramagnetic resonance detected by a change in microhardness. The effect of F-light on the spectrum of magnetic resonance plasticity is manifested as the suppression of the spectra of Fe²⁺-ν _c ions with effective g-factors of 7.0 and 3.5 due to their recombination with F-electrons and reconstruction to Fe⁺ centers with g-factors of 2.2 and 4.1.     

Thermoluminescence in single crystals of RbBr:OH− and RbBr:Ca2+

Optical absorption, thermoluminescence glow and emission spectra of RbBr:Ca²⁺ and RbBr:OH⁻ have been studied and analysed. It is observed that both Ca²⁺ and OH⁻ ions enhance theF-centre concentration.F _Z1 band in RbBr:Ca²⁺ appears at 1.55 eV. TL glow peak corresponding toF _Z1 centre on analysis gives a trap depth of 0.84 eV. OH⁻ ions in the crystal seem to act as TL ‘killers’. Spectral distribution of emission under the glow peaks shows five bands around 1.5, 1.8, 2.1, 2.5 and 2.9 eV. Probable models of TL mechanism are suggested to explain the observed TL emission bands.     

Low-temperature luminescence and thermally stimulated luminescence of BeO: Mg single crystals

Luminescence and thermally stimulated luminescence (TL) of BeO: Mg crystals are studied at T = 6–380 K. The TL glow curves and the spectra of luminescence (1.2–6.5 eV), luminescence excitation, and reflection (3.7–20 eV) are obtained. It is found that the introduction of an isovalent magnesium impurity into BeO leads to the appearance of three new broad luminescence bands at 6.2–6.3, 4.3–4.4, and 1.9–2.6 eV. The first two are attributed to the radiative annihilation of a relaxed near-impurity (Mg) exciton, the excited state of which is formed as a result of energy transfer by free excitons. The impurity VUV and UV bands are compared with those for the intrinsic luminescence of BeO caused by the radiative annihilation of self-trapped excitons (STE) of two kinds: the band at 6.2–6.3 eV of BeO: Mg is compared with the band at 6.7 eV (STE₁) of BeO, and the band at 4.3–4.4 eV is compared with the band at 4.9 eV (STE²) of BeO. In the visible region, the luminescence spectrum is due to a superposition of intracenter transitions in an impurity complex including a magnesium ion. The manifestation of X-ray-induced luminescence bands at T = 6 K in BeO: Mg indicates their excitation during band-to-band transitions and in recombination processes. The energy characteristics of the impurity states in BeO: Mg are determined; the effect of the isovalent impurity on the fluctuation rearrangement of the BeO: Mg structure in the thermal transformation region of STE₁ → STE₂ is revealed.