Defects enhanced ferromagnetism in Cu-doped ZnO thin films

We present here new evidences of point defects enhanced ferromagnetism in Cu-doped ZnO thin films by different characterization methods. Cu-doped ZnO thin films with Cu concentrations ranging from 0.05 to 5 at.% were prepared by an inductively coupled plasma enhanced physical vapor deposition system. Room-temperature ferromagnetism is observed in all the films. The saturation magnetization shows an increasing trend with the increase of Cu concentration except a slight decrease for the 1 at.% Cu-doping. Further study performed by Raman spectra, X-ray absorption spectra and extended X-ray absorption fine structure indicate the existence of Cu²⁺ ions and point defects in all the films. The local structural characterization and magnetic properties reveal that the sample with larger saturation magnetization has a higher concentration of point defects.     

BaVS3 probed by V L edge x-ray absorption spectroscopy

Polarization dependent vanadium L edge x-ray absorption spectra of BaVS(3) single crystals are measured in the four phases of the compound. The difference between signals with the polarizations E perpendicular to c and E is parallel to c (linear dichroism) changes with temperature. Besides increasing the intensity of one of the maxima, a new structure appears in the pre-edge region below the metal-insulator transition. More careful examination brings to light that the changes start already with pretransitional charge density wave fluctuations. Simple symmetry analysis suggests that the effect is related to rearrangements in the E(g) and A(1g) states, and is compatible with the formation of four inequivalent V-sites along the V-S chain.     

Room-temperature ferromagnetism of Cu-doped ZnO films probed by soft X-ray magnetic circular dichroism

We report direct evidence of room-temperature ferromagnetic ordering in O-deficient ZnO:Cu films by using soft x-ray magnetic circular dichroism and x-ray absorption. Our measurements have revealed unambiguously two distinct features of Cu atoms associated with (i) magnetically ordered Cu ions present only in the oxygen-deficient samples and (ii) magnetically disordered regular Cu2+ ions present in all the samples. We find that a sufficient amount of both oxygen vacancies (V(O)) and Cu impurities is essential to the observed ferromagnetism, and a non-negligible portion of Cu impurities is uninvolved in the magnetic order. Based on first-principles calculations, we propose a microscopic "indirect double-exchange" model, in which alignments of localized large moments of Cu in the vicinity of the V(O) are mediated by the large-sized vacancy orbitals.     

Isotope and temperature effects in liquid water probed by x-ray absorption and resonant x-ray emission spectroscopy

High-resolution x-ray absorption and emission spectra of liquid water exhibit a strong isotope effect. Further, the emission spectra show a splitting of the 1b1 emission line, a weak temperature effect, and a pronounced excitation-energy dependence. They can be described as a superposition of two independent contributions. By comparing with gas phase, ice, and NaOH/NaOD, we propose that the two components are governed by the initial state hydrogen bonding configuration and ultrafast dissociation on the time scale of the O 1s core hole decay.     

Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy

Ga(1-x)In(x)N(y)As(1-y) is a promising material system for the fabrication of inexpensive "last-mile" optoelectronic components. However, details of its atomic arrangement and the relationship to observed optical properties is not fully known. Particularly, a blueshift of emission wavelength is observed after annealing. In this work, we use x-ray absorption fine structure to study the chemical environment around N atoms in the material before and after annealing. We find that as-grown molecular beam epitaxy material consists of a nearly random distribution of atoms, while postannealed material shows segregation of In toward N. Ab initio simulations show that this short-range ordering creates a more thermodynamically stable alloy and is responsible for blueshifting the emission.     

Zn-interstitial-enhanced ferromagnetism in Cu-doped ZnO films

Copper-doped ZnO (ZnO:Cu) films exhibiting room-temperature (RT) ferromagnetism were prepared by filtered cathodic vacuum arc (FCVA) technique. The ZnO:Cu films deposited at RT showed the strongest magnetic moment of 0.40 μ_B/Cu as compared with the samples prepared at elevated temperatures. The observed strong ferromagnetism in the RT-deposited ZnO:Cu films could be partly associated with Zn-interstitial defects. The degradation of magnetic moment in the ZnO:Cu prepared at high temperatures and annealed at elevated temperatures might be attributed to the out-diffusion of Zn interstitials to the ZnO lattice.     

Cu掺杂氧化锌薄膜的发光特性研究

通过射频反应溅射法在Si（111）衬底上制备了不同Cu掺杂量的ZnO薄膜.室温下测量了样品的光致发光（PL）谱，所有样品的PL谱中均观察到435?nm左右的蓝光发光带，该发光带的强度与Cu掺杂量和溅射功率有关.当溅射功率为150?W，Cu掺杂量为2.5%时，ZnO薄膜的PL谱中出现了较强的蓝光双峰，而溅射功率为100?W，Cu掺杂量为1.5%时，出现了位于437nm（2.84eV）处较强的蓝光峰，后者的取向性较好.还研究了掺杂量和溅射功率对发光特性的影响，并对样品的蓝光发光机制进行了探讨. 关键词： ZnO薄膜 Cu掺杂 光致发光谱 射频反应共溅射     

Ultrafast core-hole-induced dynamics in water probed by x-ray emission spectroscopy

The isotope effect and excitation-energy dependence have been measured in the oxygen K-edge x-ray emission spectrum (XES). The use of XES to monitor core decay processes provides information about molecular dynamics (MD) on an ultrafast time scale through the O1s lifetime of a few femtoseconds. Different nuclear masses give rise to differences in the dynamics and the observed isotope effect in XES is direct evidence of the importance of such processes. MD simulations show that even the excitation-energy dependence in the XES is mainly related to differences in core-excited-state dynamics.     

Optically stimulated piezooptical effects in Cu-doped ZnO films

Photoinduced changes of the piezooptical effects were discovered in the ZnO crystalline films doped by Cu. The photoexcitation was performed by the Er³⁺ doped 10 ns glass laser at wavelength 1540 nm. The piezooptical effect was determined for the diagonal tensor component at 1150 nm. A nonlinear dependence of the output piezooptical response versus the photoinducing power density was established. The effect was completely reversible and disappears within the several second after the switching off of the photoinduced treatment. The possible explanation of the observed effect is given within a framework of the possible changes of Cu aggregates which is manifested through the changes of photoluminescence.     

Defects in ion-implanted crystalline silicon probed by femtosecond laser spectroscopy

Summary Radiation damage is generated in a controlled manner by MeV ion implantation of Si⁺ and He⁺ ions in c-Si and studied by ultrafast laser pulses on a subpicosecond time scale. In Si⁺-implanted samples the amorphization of the sample is achieved at sufficiently high doses, while He implants only produce a very low level of damage. Defects are investigated after implantation by measuringex situ the change of reflectivity caused by a high density of electron-hole plasma generated by femtosecond laser pulses. The plasma decay time decreases as a function of the implantation dose in both Si- and He-implanted samples, reaching a minimum value of ≈1 ps. It is observed that the saturation of the decay time is not related to the amorphization of the sample, but rather to the formation of simple defects produced during ion implantation.     

Structural and PL properties of Cu-doped ZnO films

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at ∼380 nm and a blue band centered at ∼430 nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn_i) and Zn vacancy (V_Zn) level transition. A strong blue peak (∼435 nm) was observed in the PL spectra when the α_Cu (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of α_Cu and the sputtering power on the blue band was investigated.     

Local electronic structure of phosphorus-doped ZnO films investigated by X-ray absorption near-edge spectroscopy

Using X-ray absorption near-edge structure spectroscopy (XANES), we investigate the local electronic structure of phosphorus (P) and its chemical valence in laser-ablated n-type (as-grown), and p-type (annealed) P-doped ZnO thin films. Both the P L ₁- and P L _2,3-edge XANES spectra reveal that the valence state of P is 3− (P³⁻) in the p-type as well as in the n-type P-doped ZnO. However, the peak intensity is stronger in the former than that in the latter, suggesting that P replaces O (O²⁻ sites with the P³⁻) after rapid thermal annealing. The Zn and O K-edges XANES spectra consistently demonstrate that, in the p-type state, P ions substitutionally occupy O sites in the ZnO lattice.     

Room-temperature ferromagnetism of the amorphous Cu-doped ZnO thin films

Amorphous copper-doped ZnO thin films (ZnO:Cu) prepared on glass substrates by the radio-frequency magnetron co-sputtering have been investigated. Magnetic measurements indicated that the amorphous ZnO:Cu thin films were ferromagnetic at room temperature and the saturation magnetization was much higher than that of the polycrystalline films. X-ray diffraction results showed there was no Cu₂O phase in amorphous ZnO:Cu films, which might be the reason for the high magnetic moment of the films. On the other hand, the high saturation magnetization of the amorphous ZnO:Cu films could also attribute to that there was no limit of solid solubility of Cu in amorphous ZnO solvent. The X-ray photoelectron spectroscopy study of the amorphous ZnO:Cu thin films reveal that copper was in Cu²⁺ chemical state.     

Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

The Cu-doped ZnO films were prepared by direct current reactive magnetron sputtering using a zinc target with various Cu-chips attached. The influences of Cu-doping on the microstructure, photoluminescence, and Raman scattering of ZnO films were systematically investigated. The results indicate that ZnO films doped with moderate Cu dopant (2.0-4.4 at.%) can obtain wurtzite structure with strong c-axis orientation. The near band edge (NBE) emission of ZnO film can be enhanced by Cu dopant with a concentration of 2.0 at.% and quench quickly with further increase of doping concentration. Two additional modes at about 230 and 575 cm⁻¹, which could be induced by Cu dopant, can be observed in Raman spectra of the Cu-doped ZnO films.     

Observing photochemical transients by ultrafast x-ray absorption spectroscopy

Accurate determination of the transient electronic structures, which drive photochemical reactions, is crucial in chemistry and biology. We report the detection of transient chemical changes on the picosecond time scale by x-ray-absorption near-edge structure of photoexcited aqueous [Ru(bpy)(3)](2+). Upon ultrashort laser pulse excitation a charge transfer excited state having a 300 ns lifetime is formed. We detect the change of oxidation state of the central Ru atom at its L3 and L2 edges, at a temporal resolution of 100 ps with the zero of time unambiguously determined.     

Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition

Ferromagnetic, semi-insulating Mn-alloyed ZnO films with a Curie temperature above 375 K have been grown by pulsed laser deposition on c-plane sapphire substrates. Antiferromagnetic coupling is revealed by temperature-dependent magnetization measurements. The antiferromagnetic coupling would be compatible with the observed weak ferromagnetism by assuming that the magnetic moments order antiferromagnetically but nonparallel (canted). We find a clear correlation between coercivity and mosaicity of the ferromagnetic Mn-alloyed ZnO films and explain it on the basis of a coercivity mechanism known from soft magnetic materials.     

Paramagnetism in Cu-doped ZnO

Zn0.98 Cu0.02 O powders are prepared by the sol-gel method.A small number of CuO impurity phases are observed by the x-ray diffraction,indicating the solubility of Cu in ZnO is less than 2 at.%.The Zn0.98 Cu0.02 O powders exhibit diamagnetism at 300 K and paramagnetism at 5 K.After subtracting the diamagnetic contribution of ZnO bulk and the paramagnetic contribution of defects,Cu ions exhibit weak paramagnetism.By codoping Cu with Co or Mn in ZnO,only paramagnetism is observed at room temperature.     

Bonding in liquid carbon studied by time-resolved x-ray absorption spectroscopy

Even the most basic properties of liquid carbon have long been debated due to the challenge of studying the material at the required high temperature and pressure. Liquid carbon is volatile and thus inherently transient in an unconstrained environment. In this paper we use a new technique of picosecond time-resolved x-ray absorption spectroscopy to study the bonding of liquid carbon at densities near that of the solid. As the density of the liquid increases, we see a change from predominantly sp-bonded atomic sites to a mixture of sp, sp2, and sp3 sites and compare these observations with molecular dynamics simulations.     

Mn和N共掺ZnO稀磁半导体薄膜的研究

使用对Zn₂N₃:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μ_B—0.61 μ_B.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好. 关键词： 磁性半导体 受主掺杂 空穴媒介的铁磁性