Molecular layer deposition of poly(p-phenylene terephthalamide) films using terephthaloyl chloride and p-phenylenediamine

Ultrathin polymer films can be fabricated using the gas-phase method known as molecular layer deposition. This process typically uses bifunctional monomers in a sequential, self-limiting reaction sequence to grow conformal polymer films with molecular layer control. In this study, terephthaloyl chloride (TC) and p-phenylenediamine (PD) were used as the bifunctional monomers to deposit poly(p-phenylene terephthalamide) (PPTA) thin films. 3-Aminopropyl trimethoxysilane or ethanolamine was used to prepare amine-terminated surfaces prior to the PPTA MLD. The surface chemistry and growth rate during PPTA MLD at 145 degrees C were studied using in situ transmission Fourier transform infrared (FTIR) spectroscopy experiments on high surface area powders of SiO2 particles. PPTA MLD thin film growth at 145 degrees C was also examined using in situ transmission FTIR experiments on flat KBr substrates with an amine-terminated Al2O3 ALD overlayer. The integrated absorbances of the N-H and amide I stretching vibrations were measured and used to estimate the thin film thickness. X-ray reflectivity (XRR) experiments were also employed to measure the film thickness after PPTA MLD at 145 degrees C and 180 degrees C. The experiments revealed that the TC and PD reactions displayed self-limiting surface chemistry. The surface species alternated with sequential TC and PD exposures and the PPTA MLD films grew continuously. However, the growth rates per MLD cycle at 145 degrees C were less than expectations based on the size of the molecules involved in the reaction chemistry and were variable between 0.5 and 4.0 A per TC/PD reaction cycle. The lower growth rates are explained by the growth of a limited number of polymer chains on the substrate. The variability in the growth rate is attributed to the difficulties with the bifunctional monomer precursors. Alternative surface chemistries for polymer MLD are proposed that would avoid the use of bifunctional monomers.     

Chemical vapour deposition on silicon: In situ surface studies

The decomposition of Fe(CO)₅ to produce Fe films on Si(100) has been examined in situ using Auger electron spectroscopy. Processes occurring during pyrolytic, UV photolytic and electron beam deposition are determined. The nature of the surface films produced by these different methods is compared and contrasted.     

Enzymatically synthesized polyaniline film deposition studied by simultaneous open circuit potential and electrochemical quartz crystal microbalance measurements

The chemical and enzymatic deposition of polyaniline (PANI) films by in situ polymerization was studied and the resulting films were characterized. The film formation and polymerization processes were simultaneously monitored by the evolution of the open circuit potential and quartz-crystal microbalance measurements. Different substrates, such as Indium-Tin oxide electrodes and gold-coated quartz-crystal electrodes were used as substrates for PANI deposition. Electroactive PANI films were successfully deposited by in situ enzymatic polymerization at low oxidation potential. The electrogravimetric response of the enzymatically deposited PANI film was studied by cyclic voltammetry in monomer-free acidic medium. The morphology of the films was observed by scanning electron microscopy, revealing a granular structure in enzymatically deposited PANI. The PANI films were also characterized by thermogravimetric analysis, electrochemical impedance spectroscopy, and X-ray photoelectron and Fourier-transformed infrared spectroscopy. The simultaneous use of quartz crystal microbalance and open circuit potential is presented as a very useful technique to monitor enzymatic reactions involving oxidoreductases.     

Electrochemically induced atom-by-atom growth of ZnS thin films: a new approach for ZnS co-deposition

Ultrathin films of ZnS were grown on Au (111) substrates using a novel, simple co-deposition method and characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. Cyclic voltammograms were used to determine approximate deposition potentials for co-deposition. XRD shows that the material growth is highly preferential with (111) orientation. Both AFM and XRD data indicate that the ZnS growth mechanism starts by the formation of rounded nanoparticles at the surface and then continues by lateral and vertical growth to form flat square crystallites of ZnS. UV-vis spectra taken for the ZnS thin films with various thicknesses, which is related to deposition time, shows that the band gap of the ZnS decreases as the film thickness increases.     

Nanostructured ultrathin films of alternating sexithiophenes and electropolymerizable polycarbazole precursor layers investigated by electrochemical surface plasmon resonance (EC-SPR) spectroscopy

Nanostructured ultrathin films of linear and dendrimeric cationic sexithiophenes, 6TNL and 6TND, respectively, alternated with anionic polycarbazole precursor, poly(2-( N-carbazolyl) ethyl methacrylate- co-methacrylic acid) or PCEMMA32, were successfully fabricated using the layer-by-layer self-assembly deposition technique. The two electro-optically active oligomers exhibited distinct optical properties and aggregation behavior in solution and films as studied by UV-vis and fluorescence spectroscopy. The stepwise increase of the 6TNL/PCEMMA32 and 6TND/PCEMMA32 layers was confirmed by UV-vis spectroscopy and in situ surface plasmon resonance (SPR) spectroscopy. The intralayer electrochemical polymerization and cross-linking behavior of the carbazole functionalized PCEMMA32 layers were then investigated using cyclic voltammetry (CV) and electrochemical surface plasmon resonance (EC-SPR) spectroscopy. The increase in current with each cycle confirmed intralayer cross-linking followed by the doping-dedoping process within these films. The two types of films differed with respect to dielectric constant and thickness changes before and after electropolymerization, indicating the influence of the oligothiophene layers. This demonstrated for the first time the preparation of highly ordered organic semiconductors alternated with in situ electropolymerizable layers in ultrathin films.     

A high-resolution near-edge x-ray absorption fine structure investigation of the molecular orientation in the pentacene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) pentacene/system

We present x-ray photoemission spectroscopy and highly resolved near-edge x-ray absorption fine structure spectroscopy measurements taken on pentacene thin films of different thicknesses deposited on a spin coated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) substrate. Thin films of pentacene were prepared by using organic molecular beam deposition in situ using strictly controlled evaporation conditions. Our investigations show that pentacene thin films on PEDOT:PSS are characterized by upright standing molecules. Due to the strong dichroic behavior, the calculated values of the molecular orientation give a clear indication not only of the real molecular arrangement in the films but also of a high orientational order. This high degree of molecular orientation order is a characteristic already of the first layer. The films show the tendency to grow on the PEDOT:PSS substrate following an island-fashion mode, with a relatively narrow intermixing zone at the interface between the pentacene and the polymer blend. The peculiarity of the growth of pentacene on PEDOT:PSS is due to the fact that the substrate does not offer any template for the nucleated films and thus exerts a lateral order toward the crystal structure arrangement. Under these conditions, the upright orientation of the molecules in the films minimizes the energy required for the system stability.     

Determination of sublimation rate of 2,4,6-trinitrotoluene (TNT) nano thin films using UV-absorbance spectroscopy

We report the in situ measurements of the sublimation rate and activation energy of continuous nanofilms of 2,4,6-trinitrotoluene (TNT) in air using UV absorbance spectroscopy. The films were prepared using acetone-dissolved TNT by simple spin coating deposition technique. Unlike traditional mass loss techniques, this new method is independent of the surface area of the sample which contributes to errors in determining physical parameters accurately in both bulk and thin films of materials. The calculated activation energy and temperature-dependent sublimation rates agree well with the reported values for TNT thin films. The results suggest that UV absorbance spectroscopy is an efficient tool in measuring thermodynamic properties in the nanometer scale for materials with absorbance in the UV region of the electromagnetic spectrum.     

Growth of organic n-conductors on thin polymer films for use in organic field effect transistors

Thin films of different polymers - poly(styrene) (PS), poly(methylmethacrylate) (PMMA), poly(vinylcarbazole) (PVCz), poly(vinylchloride) (PVC) and poly(vinylidene fluoride) (PVDF) - were deposited by spin-coating or by vapor deposition. On these polymers, thin films of (hexadecafluorophthalocyaninato)-oxovanadium (F₁₆PcVO) were prepared by physical vapor deposition. The growth of these films was monitored in situ by optical spectroscopy. The optical absorbance spectra were analyzed based on the coupling of transition dipoles to obtain information on the intermolecular arrangement of chromophores in the films. In all of these samples, the molecules are oriented with their molecular plane preferentially perpendicular to the substrate surface. This gives the desired overlap of the π-systems for electric conductance parallel to the substrate. Differences in the interactions were detected when deposition temperatures below or above the glass transition temperature of a given polymer were compared. The morphology of the polymer films and the deposited semiconductors were investigated by atomic force microscopy and scanning electron microscopy. The influence of the chosen substrate on the film structure is determined. The optical and electric properties of the films could thereby be influenced and the applicability of such films as active layers in organic thin film transistors is discussed.     

Nanoclusters in polymer matrices prepared by co-deposition from a gas phase

This paper reviews the fabrication of organic and metal nanoclusters in polymer matrices by three co-deposition techniques. In particular, the structure and properties of polytetrafluoroethylene (PTFE), polychlortrifluoroethylene (PCTFE), polyparaphenylene sulphide (PPS), polystyrene (PS) and polyparaxylylene (PPX) films, containing gold (Au) and dye clusters are discussed. For the first time, dye-filled polymers and multi-component films, consisting of both Au nanoparticles and dye molecules, dispersed in the PTFE matrix were studied. A low temperature plasma was used for film structure modification. Cluster formation process was studied using optical spectroscopy in situ. Transmission electron microscopy (TEM), atomic force microscopy (AFM) and ellipsometry were used for characterisation of the grown films. During Au-PTFE film growth plasmon band shifted from 460-480 nm to 560 nm. Au cluster diameter was in the 3-7 nm range. Plasma treatment of the vapours led to formation of smaller, but more aggregated clusters. During Au-PPS film deposition a two-step growth mechanism was discovered. At the beginning of film growth the plasmon band at 540 nm appeared, but as thickness increased, the band at 430 nm dominated. Without plasma treatment a disordered mixture was deposited, while with plasma treatment large Au aggregates confined with PPS matrix having plasmon band at 620 nm were formed. Dye cluster formation depends on the dye ability to aggregate, its concentration and the properties of the polymer matrix. But cluster formation can also be tuned by varying the deposition conditions. Laser beam evaporation promoted cluster formation, while plasma treatment and dilution in a polymer matrix prevented cluster formation. In all cases both equilibrium and non-equilibrium film structure can be formed using kinetic factor. Asymmetric molecules with bulky substituents were oriented in polymer matrices by applying an electric field in situ or by corona poling. These molecules did not aggregate even at high dye load. The films exhibited second harmonic generation, which demonstrated chromophore orientation in the polymer matrices.     

MOF-on-MOF heteroepitaxy: perfectly oriented [Zn2(ndc)2(dabco)]n grown on [Cu2(ndc)2(dabco)]n thin films

We report the successful heteroepitaxial growth of perfectly oriented hybrid MOF thin films. By employing step-by-step liquid-phase epitaxy (LPE), [Zn(2)(ndc)(2)(dabco)](n) was grown on [Cu(2)(ndc)(2)(dabco)](n), thus demonstrating that the MOF-on-MOF deposition scheme developed for powdered microcrystalline MOF materials can also be applied in connection with LPE for MOF thin films or multilayers. The deposition was monitored by surface plasmon resonance (SPR) spectroscopy, the resulting MOF heterostructures were characterized using IR spectroscopy and different types of X-ray diffraction (XRD)-based techniques. The results suggest that the LPE method is a promising way to fabricate and grow MOF heterostructures, and also demonstrates the potential of [Cu(2)(ndc)(2)(dabco)](n) MOF thin films as substrates for the LPE-based growth of different MOFs on top.     

Molecular and morphological characterization of bis benzimidazo perylene films and surface-enhanced phenomena

Thin solid films of bis benzimidazo perylene (AzoPTCD) were fabricated using physical vapor deposition (PVD) technique. Thermal stability and integrity of the AzoPTCD PVD films during the fabrication ( approximately 400 degrees C at 10(-6) Torr) were monitored by Raman scattering. Complementary thermogravimetric results showed that thermal degradation of AzoPTCD occurs at 675 degrees C. The growth of the PVD films was established through UV-vis absorption spectroscopy, and the surface morphology was surveyed by atomic force microscopy (AFM) as a function of the mass thickness. The AzoPTCD molecular organization in these PVD films was determined using the selection rules of infrared absorption spectroscopy (transmission and reflection-absorption modes). Despite the molecular packing, X-ray diffraction revealed that the PVD films are amorphous. Theoretical calculations (density functional theory, B3LYP) were used to assign the vibrational modes in the infrared and Raman spectra. Metallic nanostructures, able to sustain localized surface plasmons (LSP) were used to achieve surface-enhanced resonance Raman scattering (SERRS) and surface-enhanced fluorescence (SEF).     

Layered molybdenum oxide thin films electrodeposited from sodium citrate electrolyte solution

Molybdenum oxide thin films were prepared electrochemically onto the selenium predeposited tin oxide-coated glass substrates using 0.22 M sodium citrate (C₆H₅Na₃O₇) solution (pH 8.3) and sodium molybdate as a precursor. Cyclic voltammetry was used to determine the deposition potential effects on molybdenum compound speciation, while quantitative thin film composition was obtained from X-ray photoelectron spectroscopy depth profiles. Thin molybdenum film growth and composition was potential dependant. Predominant molybdenum species was Mo(IV) at all deposition potentials and deposition times. Optical properties of the molybdenum oxide thin films were determined using UV–VIS spectroscopy. The absorption edge varied between 560 and 650 nm, whereas optical band gap values—between 1.79 and 2.19 eV—well within the limits for solar light-induced chemical reactions.     

Study of the growth process of in situ polyaniline deposited films

Polyaniline (PAni) thin films were deposited onto BK7 glass substrates using the in situ deposition technique. The control of the time and the aniline concentration in the PAni polymerization reaction on the film deposition allowed us to prepare films with different thickness, down to approximately 25 nm. The film growth process was monitored by measuring the UV-vis spectra and the AFM height profiles of the film surface. The curves of adsorption kinetics were analyzed with the Avrami's model, yielding an exponent n=3, thus indicating nucleation of spheroids at the initial stages of polymerization that grow through a diffusion process. AFM images of the surface height profiles corroborate this hypothesis, with spheroids growing with no preferred orientation during the in situ deposition.     

Strategies for two-dimensional growth of organic molecular films

After a brief summary of the thermodynamic background on which strategies for driving molecular film growth can be pointed out, we present some recent results on the growth of oligothiophene thin films by organic molecular beam deposition, as obtained studying the film morphology by atomic force microscopy and monitoring the film growth in situ and in real-time by reflectance anisotropy spectroscopy. Three-dimensional and two-dimensional nucleation and growth are obtained by properly tuning the process conditions, such as, in particular, the substrate type and temperature, the molecular flux, and the substrate surface quality. Finally, the tuning of these parameters is used for reaching the condition of a stable layer-by-layer epitaxial growth at room temperature, fully equivalent to that well assessed for inorganics.     

Boundary layer chemistry probed by in situ infrared spectroscopy during SiO2 deposition at atmospheric pressure from tetraethylorthosilicate and ozone

The deposition of silicon dioxide films at 450 degrees C was studied in quasi real time by probing the thermally activated boundary layer region near the growing surface during atmospheric pressure chemical vapor deposition (APCVD). Potential tetraethylorthosilicate (TEOS)/O(3) reaction products have been investigated in an attempt to clarify the reaction mechanism leading to the observed silanol deposition intermediates and delineate the film formation process. The organic products formed during the TEOS/O(3) reaction are acetic acid, formic acid, formaldehyde, carbon monoxide, carbon dioxide, and water. Quantitative methods are developed using FT-IR (Fourier transform infrared) spectroscopy during ozonation of TEOS at elevated temperatures. The measurement of gaseous alcohols of silicon alkoxides by FT-IR is demonstrated by application of an in situ methodology that probes the high-temperature region within the CVD environment. Partial least squares (PLS) Beer's law absorption models are used in determining relative TEOS, ozone, and ethoxysilanol levels during the reaction. The reaction order in TEOS is measured at 1.65 +/- 0.02 over a 0.9 Torr pressure range. Similarly, the ratio of ethoxysilanol formed versus the amount of ozone consumed is ca. 1:3. A radical chain oxidative mechanism involving direct reaction of TEOS and ozone is proposed for formation of highly reactive silanol film growth intermediates.     

CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy

Ultrathin tin oxide films were deposited on SiO2 nanoparticles using atomic layer deposition (ALD) techniques with SnCl4 and H2O2 as the reactants. These SnO(x) films were then exposed to O2 and CO gas pressure at 300 degrees C to measure and understand their ability to serve as CO gas sensors. In situ transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor both the charge conduction in the SnO(x) films and the gas-phase species. The background infrared absorbance measured the electrical conductivity of the SnO(x) films based on Drude-Zener theory. O2 pressure was observed to decrease the SnO(x) film conductivity. Addition of CO pressure then increased the SnO(x) film conductivity. Static experiments also monitored the buildup of gas-phase CO2 reaction products as the CO reacted with oxygen species. These results were consistent with both ionosorption and oxygen-vacancy models for chemiresistant semiconductor gas sensors. Additional experiments demonstrated that O2 pressure was not necessary for the SnO(x) films to detect CO pressure. The background infrared absorbance increased with CO pressure in the absence of O2 pressure. These results indicate that CO can produce oxygen vacancies on the SnO(x) surface that ionize and release electrons that increase the SnO(x) film conductivity, as suggested by the oxygen-vacancy model. The time scale of the response of the SnO(x) films to O2 and CO pressure was also measured by using transient experiments. The ultrathin SnO(x) ALD films with a thickness of approximately 10 A were able to respond to O2 within approximately 100 s and to CO within approximately 10 s. These in situ transmission FTIR spectroscopy help confirm the mechanisms for chemiresistant semiconductor gas sensors.     

Anomalous roughness evolution of rubrene thin films observed in real time during growth

We study the growth and structure of thin films of the organic semiconductor rubrene during organic molecular beam deposition (OMBD) on silicon oxide in situ and in real time using X-ray scattering. Using in situ grazing incidence diffraction (GID) we find a small degree of local order but an otherwise largely disordered structure, consistent with out of plane scans. Monitoring the surface morphology in real time during growth, we find relatively smooth films (surface roughness sigma below approximately 15 A for thicknesses up to at least 600 A) and a significant delay before the onset of roughening. This anomalous roughening in the beginning and crossover to normal roughening later during growth may be related to conformational changes of rubrene in the early stages of growth.     

In situ investigation of the early stage of TiO2 epitaxy on (001) SrTiO3

We report on a systematic study of the growth of epitaxial TiO(2) films deposited by pulsed laser deposition on Ti-terminated SrTiO(3) (001) single crystals. By using in situ reflection high energy electron diffraction, low energy electron diffraction, x-ray photoemission spectroscopy, and scanning probe microscopy, we show that the stabilization of the anatase (001) phase is preceded by the growth of a few nanometers thick pseudomorphic Sr(x)TiO(2+y) (x, y < 1) intermediate layer. The data demonstrate that the formation of this intermediate phase is related to the activation of a long range Sr migration from the SrTiO(3) substrate into the film. Our results enrich the phase diagram of the Sr-Ti-O system under epitaxial strain opening a route for the study of the electronic and dielectric properties of the reported Sr-deficient SrTiO(3) phase.     

Synthesis, characterization and application of Ni(tta)2.tmeda to MOCVD of nickel oxide thin films

A novel nickel beta-diketonate adduct, Ni(tta)2.tmeda, has been synthesized using 2-thenoyltrifluoroacetone as the beta-diketonate and N,N,N,'N'-tetramethylethylendiamine as the Lewis base. It has been characterized by elemental analyses, IR, 1H NMR, 13C NMR spectroscopy and single-crystal X-ray diffraction studies. Physical and thermal properties of Ni(tta)2.tmeda precursor have been also extensively investigated. Its efficacy as a metal-organic chemical vapour deposition (MOCVD) precursor for the growth of nickel oxide films has been fully tested by applying it to the deposition of NiO films on quartz substrate. NiO thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy and UV spectroscopy.