Temperature dynamics of triglycine sulfate domain structure according to atomic force microscopy and dielectric spectroscopy data

A hydrogen-containing ferroelectric triglycine sulfate (TGS) was comprehensively studied with an atomic force microscopy (AFM) and dielectric spectroscopy. The domain structure dynamics was in situ investigated with piezoresponse force microscopy (PFM) during heating and cooling the TGS crystal near phase transition. Relaxation dependencies of domain boundaries general perimeter and domain dimensions were obtained. TGS dielectric spectra measured at the frequency range from 10 to 10¹¹ Hz were analyzed on basis of significant contribution of conductivity into the dielectric response of ferroelectrics and a good agreement with the experimental data was received. It allows us to obtain more information about temperature dynamics of the domain structure.     

Optical spectra of triglycine sulfate crystals in the range of 7–33 eV and its changes at phase transition

Pseudo-dielectric functions ?ε₁(E)? and ?ε₂(E)? of triglycine sulfate (TGS) crystal have been obtained in the range of 7–33 eV for different temperatures close to ferroelectric phase transition by spectral ellipsometry using the synchrotron radiation source BESSY II. These dielectric functions ε₁(E) and ε₂(E) have also been calculated from first principles using CASTEP CAmbridge Serial Total Energy Package code together with the band structure and density of electronic states of the crystal. Experimental and theoretical dielectric functions agree satisfactorily. A characteristic decrease of temperature dependences of the dielectric losses tgδ(T) and related values just below the phase transition temperature T _c have been found and discussed.     

Dielectric properties of a triglycine sulfate crystal grown with a transition through the Curie point

The dielectric properties of the triglycine sulfate (TGS) crystal grown by lowering the temperature with a transition through Curie point T_C during its growth are studied. The greatest values of low-frequency dielectric permittivity ε_max(T = T_C) and effective dielectric permittivity ε_eff(E₀) correspond to the layer of crystal formed at the temperature of the phase transition.     

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 °C/min. An increase in the Curie temperature T_c=51 °C (for pure TGS, T_c=48.5 °C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.     

Domain structure of triglycine sulfate family crystals according to the data of piezoresponse force microscopy and their macroscopic dielectric properties

The domain structure of triglycine sulfate (TGS) crystals, specifically nominally pure crystals and those with impurities (LADTGS+ADP, DTSG, and TGS:Cr), is studied by piezoresponse force microscopy (PFM). The measured macroscopic dielectric characteristics are compared with microscopic data on the domain structure of these crystals. The values of the spontaneous polarization, bias voltage, and dielectric permeability as a function of temperature ?(T) are shown to be in agreement with the PFM data. The anomalous behavior of the dependence ?(T) was observed for LADTGS+ADP crystals.     

Investigation of the effect of gamma rays on electrical properties of chlorinated poly (vinyl chloride)

Dielectric constant, dielectric loss and AC conductivity were measured, in the frequency range 100 Hz to 5 MHz in chlorinated poly (vinyl chloride) (CPVC) before and after exposure to gamma irradiation at doses between 5.0 KGy and 50.0 KGy. The frequency dependencies of ε′, ε″ and σ_AC at 30 °C were investigated. A relaxation peak in the dielectric loss and a corresponding step in the dielectric constant have been observed, in the frequency ranges 10³ Hz to 10⁴ Hz. The dielectric constant ε′, dielectric loss ε″ and AC conductivity σ_AC are also found to increase at heating up to 100 °C. In addition the effect of gamma irradiation on the frequency dependencies of ε′, ε″ and σ_AC was measured at room temperature. The gamma irradiation leads to an increase in the efficiency of soft segments. Furthermore, the DC electrical conductivity of both the irradiated and non-irradiated samples was investigated. The induced electrical conductivity and the activation energy were measured, at various temperatures, as a function of gamma dose. It was found that the gamma radiation has a definite effect on the DC conductivity of the CPVC polymer.     

Investigation of domain structure of TGS single crystal after a transverse electric field by piezoresponse force microscopy

An investigation of the influence of electric field transverse to the ferroelectric axis b_HOP and parallel to c_HOP axis of triglycine sulfate (TGS) single crystal on ferroelectric domain structure was performed by piezoresponse force microscopy. To check if the applied electric field changed the dielectric properties and ferroelectric domain structure the hysteresis loop measurements were carried out as well as observations of domain structure by the liquid crystal technique. The investigation revealed existence of blocked domains in the crystal modified by the electric field TGS.     

Analysis of Experimental Results by the Havriliak–Negami Model in Dielectric Spectroscopy

The problem of identifying experimental results on studying frequency dependences of the real and imaginary parts of dielectric permittivity concerning the correspondence to one of accepted frequency dispersion models: Debye, Cole–Cole, Davidson–Cole, and Havriliak–Negami models is considered. Based on expressions for components of complex dielectric permittivity with the use of mathematical analysis, a sequence of steps for the determination of the following characteristic parameters of the generalized Havriliak–Negami model is developed: static ε _S and high-frequency ε_∞ dielectric permittivity, frequency dispersion indices α and β, and relaxation time τ. As an example, the parameters ε _S , ε_∞, α, β, and τ are calculated for a sample of a frozen disperse medium based on fine-grained quartz powder at a humidity of 13% in a temperature range from –140 to 0°C.     

Dielectric response of SrTiO<Subscript>3</Subscript>–SrMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript> solid solutions in the terahertz–infrared range

The reflection and transmission spectra of ceramic samples of SrTiO₃–SrMg_1/3Nb_2/3O₃ solid solutions have been measured in the frequency range of 5–5000 cm^–1 and in the temperature range of 5–370 K. Based on these spectra, the spectra of the real ε'(ν) and imaginary ε''(ν) parts of the complex permittivity ε*(ν) have been simulated by the method of dispersion analysis. It has been found that the temperature evolution of the dielectric constant is entirely determined by the behavior of the soft mode.     

Permittivity and conductivity of triglycine sulfate films on Al/SiO2 and α-Al2O3 substrates

Triglycine sulfate (TGS) films have been prepared by evaporation from a saturated aqueous solution on substrates of fused quartz coated by a layer of thermally deposited aluminum (Al/SiO₂) and white sapphire (α-Al₂O₃) on whose surface interdigital electrodes have been deposited by photolithography. The TGS films have a polycrystalline structure made up of blocks measuring 0.1–0.3 mm (Al/SiO₂) and 0.1 × 1.0 mm (α-Al₂O₃). The polar axis in the blocks is mostly confined to the substrate plane. The temperature dependences of the capacitance and dielectric losses normal to and in the film plane have maxima at the temperature coinciding with that of the ferroelectric phase transition in a bulk crystal, T _c . The low-frequency conductivity G in TGS/Al/SiO₂ structures displays a frequency dispersion described by the relation G ∼ ω ^s (s ≈ 0.82). The conduction can be tentatively ascribed to the hopping mechanism involving localized carriers with a ground state energy of 0.8–0.9 eV. At temperatures above and below T _c , the low-frequency conductivity in TGS/α-Al₂O₃ films operates through a thermally-activated mechanism with an activation energy of 0.9–1.0 eV. At the phase transition, an additional contribution to conductivity appears in TGS/α-Al₂O₃ films with a dispersion G ∼ ω^0.5, which can be associated with domain-wall relaxation.     

Temperature dependence of the permittivity of PbWO<Subscript>4</Subscript> crystals in the range 290–550 K

The temperature dependence of the permittivity ε of PbWO₄ crystals is studied in the range T = 290–550 K at a frequency of 1 kHz. The ε(_T) dependences measured on heating and cooling are different. On heating, groups of narrow maxima at 290–330 K and 330–400 K are observed in the ε(_T) curves. The first group of peaks is dominant. High-temperature polarization produces an additional broad peak in the ε (_T) curve at 400 K. A linear ε(_T) dependence is observed in the range 400–470 K. Above 470 K, the variation in ε(_T) closely follows an exponential law. Restoring relaxation of ε in the range 25–30 at 290 K after high-temperature sample heating proceeds exponentially in a few stages. The features of ε(_T) curves are determined by the dipole polarization and the hopping mechanism of charge exchange between complex dipole associates. Such structural defects may be pairs of doubly charged lead and oxygen vacancies (diplons). These defects also form a basis for more complicated defect complexes with localized holes (or electrons) at the corresponding vacancies.     

Specific Features of the Structure and the Dielectric Properties of Sodium–Bismuth Titanate-Based Ceramics

The phase formation, specific features, and the dielectric properties of the ceramics of compositions from the region of morphotropic interface in the (Na_0.5Bi_0.5)TiO₃–BaTiO₃ system modified by Bi(Mg_0.5Ti_0.5)O₃ and also low-melting additions KCl, NaCl–LiF, CuO, and MnO₂ that favor the control of the stoichiometry and the properties of the ceramics have been studied. The ceramics are characterized by ferroelectric phase transitions that are observed as jumps at temperatures near 400 K and maxima at T_m ~ 600 K in the temperature dependences of the dielectric permittivity. The phase transitions at ~400 K demonstrate the relaxor behavior indicating the existence of polar domains in the nonpolar matrix. An increase in the content of Bi(Mg_0.5Ti_0.5)O₃ favor a decrease in the electrical conductivity and dielectric losses of the samples, and the relative dielectric permittivity at room temperature ε_rt is retained quite high, achieving the highest values ε_rt = 1080–1350 in the ceramics modified with KCl.     

Response of TGS ferroelectric samples to rapid temperature impulses

Tryglicine sulphate (TGS) is one of the most extensively studied ferroelectric materials, which undergoes second order phase transition and shows the pyroelectric effect. In our present experiments we study the electric properties of TGS, in relation to domain switching, observing the samples’ response to controlled temperature pulses. The charge released in the processes of domain switching was previously studied under constant temperature growth. Our method allows us to observe the released pyroelectric charge in both the ferroelectric and paraelectric phases. To perform our experiment we designed new measurement software and constructed a novel thermostatic sample holder containing Peltier’s cells as heating/cooling elements.     

The Effect of Uniaxial Pressures on the Infrared Spectra of LiNH<Subscript>4</Subscript>SO<Subscript>4</Subscript> Crystals

The infrared reflection spectra of mechanically free and uniaxially compressed LiNH₄SO₄ crystals are studied for the first time in the spectral range of 800–1700 сm^–1 along three crystallophysical directions. The Kramers–Kronig dispersion relations are used to determine the dispersion and baric dependences of refractive index n and the real ε₁ and imaginary ε₂ parts of the dielectric constant and to calculate the frequencies of longitudinal ω_LO and transverse ω_ТO vibrations, decay constant γ, and oscillator strength f of mechanically free and compressed LiNH₄SO₄ crystals. The considerable changes observed in the main reflection bands are explained by the effect of uniaxial pressures on the NH₄ and SO₄ tetrahedra.     

Dielectric and structural relaxation phenomena in Na0.5Bi0.5TiO3 single crystal

Abstract

Dielectric permittivity studies of Na_0.5Bi_0.5TiO₃ single crystals in a broad range of frequency up to 10 MHz and temperature 300—823 K are reported. In this temperature range dielectric dispersion below 1 MHz has been found. The obtained data were fitted to the Cole-Cole relation. The mean relaxation time τ is strongly temperature dependent (0.04 ? 2.6 × 10^?5 s). A remarkable hysteresis effect in the values of τ on cooling and heating took place. The Δε(T) dependence (the maximal value of Δε ～ 400) is similar to the global ε′(T) response at low frequency. An isothermal structural transformation in Na_0.5Bi_0.5TiO₃ was observed by X-ray measurements. The order of the time in which the transformation takes place (～300 minutes) corresponds to the time in which the strongest time evolution of electric permittivity and time changes of dielectric dispersion were detected.     

Some dielectric properties of novel nano‐s‐triazine derivatives

The evaluation of the dielectric properties of s‐triazine and its mono‐, di‐, tri‐(trityloxy)triazine derivates as a function of temperature from room temperature to 200°C, and frequency varying from 50 Hz to 5 MHz was performed. The dielectric constant increases with the increase of both temperature and frequency. Moreover, from the measured dielectric loss ε″ we found that there are different types of electric energy losses in the presence of an alternating electric field from which we calculate the entropy ΔS and the enthalpy change ΔH of the dielectric relaxation for each sample. The dielectric relaxation was attributed to the phase transition of the s‐triazine derivatives. Additionally, ac‐electrical conductivity as a function of frequency at different temperatures were studied. Analysis of ac conductivity data indicates that the correlated barrier hopping model is the most suitable mechanism for the ac‐conductance behavior. X‐ray diffraction and scanning electron microscopy were performed on the compounds under consideration to determine the grain size of each sample, which was found in the range of 3 to 100 nm.     

低温氮化硅薄膜的介电性能研究

研究了微波电子回旋共振等离子体化学汽相沉积低温氮化硅薄膜在5—10⁶Hz频率范围内的介电性能．由于低温氮化硅薄膜为具有分形结构的纳米非晶薄膜，致使氮化硅薄膜的介电谱、损耗谱在低频区和高频区具有两种不同的分布规律．在低频区介电谱具有ε′∝ω^n－1₁的关系，ｎ₁在0.82—0.88之间，是电子跳跃导电的结果；在高频区介电谱具有ε′∝ω^n-1₂的关系，n₂在0 关键词：     

Influence of surface topography and annealing temperature on the surface and volume of dissipation electrical energy and Spitzer–Fan model in Al doped ZnO films

The aim of this work is to investigate the optical constants of aluminum doped zinc oxide films annealed at different temperatures. With increasing temperature, due to decreasing unfilled inter-granular volume per unit thickness, the optical transmittance spectra of films were increased. The films have a normal dispersion in the spectral range 400?<?λ?<?500 nm and the anomalous dispersion in IR range. The lattice dielectric constants ε_L, the free charge carriers concentration, the plasma frequency, Spitzer–Fan model and the waste of electrical energy as heat of films can be analyzed using the refractive index n and the extinction coefficient k spectra. With increasing annealing temperature, the lattice dielectric constants ε_L of films decrease however the free charge carriers concentration of films increase. The free carrier electric susceptibility of films annealed at 600 °C has maximum value. The energy loss by the free charge carriers when traversing the bulk and surface of films annealed at 600 °C has a minimum value in the near fundamental absorption edge and it with increasing energy increases.     

Magnetic memory effects in triglycine sulfate ferroelectric crystals

The effect of a magnetic field on the processes of relaxation of the defect structure relaxation in a triglycine sulfate (TGS) ferroelectric (nonmagnetic) crystal has been observed for the first time. The atomic-force microscopy study has shown that the application of a static weak magnetic field (2 T, 20 min) significantly changes the size distribution of defect nanoclusters characteristic of TGS. Previously known macroscopic aftereffects of the magnetic field in TGS (slow relaxation of the dielectric susceptibility, symmetrization of P–E dielectric hysteresis loops, etc.) can be explained by the redistribution of pinning centers of domain walls caused by the magnetically induced reconfiguration of the defect structure.     

Iminodiacetic acid doped ferroelectric triglycine sulphate crystal: Crystal growth and characterization

Single crystals of iminodiacetic acid (HN(CH₂COOH)₂) doped triglycine sulphate (IDATGS) crystals have been grown from aqueous solution containing 1-10 mol% of iminodiacetic acid at constant temperature by slow evaporation technique. The effects of different amounts of doping entities on the growth habit have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. The grown crystals were subjected to Fourier transform infrared (FTIR) spectroscopy studies to find the presence of various functional groups qualitatively. The dielectric permittivity has been studied as a function of temperature. An increase in the transition temperature (49.2-49.7 °C) of IDATGS crystals is observed. The dielectric constant (ε′_max) of IDATGS crystals vary in the range 922-2410 compared to pure TGS (T_c=49.12 °C and ε′_max=3050). Curie Weiss constants C_p and C_f in the paraelectric and ferroelectric phases were determined. The transition temperature (T_c) is found to decrease with increase in dopant concentration. P-E hysteresis studies show the presence of internal bias field in the crystal. Piezoelectric measurements were also carried out at room temperature. Domain patterns on b-cut plates were observed using scanning electron microscope. The micro hardness studies reveal that the doped crystals are harder than the pure TGS crystals. The low dielectric constant, higher transition temperature, internal bias field and hardness suggest that IDATGS crystals could be a potential material for IR detectors.