超短脉冲激光对硅膜的热力效应分析

为了研究超短脉冲激光辐照下半导体材料的热力效应,在热电子崩力和自洽场两种模型的基础上,得到了完全耦合的非线性热弹方程组。在单轴应力条件下,采用有限差分法,讨论了不同脉宽的超短脉冲激光辐照下,硅膜内载流子温度、晶格温度、热应力以及热电子崩力随时间及膜深度的变化情况。结果表明,脉冲宽度对硅膜的热力损伤过程起重要作用。能量密度一定时,载流子和晶格达到热平衡所需时间随脉冲宽度的增加而增加;热电子崩力呈现明显的双峰结构,同时脉冲宽度对第二个峰值的影响较大;脉宽越窄,热应力的峰值越大,越容易对材料造成损伤,为激光加工和光电器件的损伤提供了理论参考。     

超快脉冲激光辐照金属薄膜热-力效应的模拟研究

基于双曲双温两步热传导和热电子崩力模型,考虑到超快脉冲激光辐照金属薄膜材料过程中的热-力耦合效应,得到了完全耦合的、非线性的超快热弹性模型.运用具有人工粘性和自适应步长的有限差分算法,以脉宽为100 fs的脉冲激光辐照200 nm厚金膜为例,对薄膜体内的电子-晶格温度及温度梯度、热应力和电子热流进行了数值模拟研究.结果表明：脉冲辐照早期为明显的非平衡加热阶段,同时形成较大的热电子崩力;电子热流出现双峰现象;超快加热引起的热应力是导致薄膜力学损伤的主要原因.     

飞秒脉冲激光作用下金属薄膜的热弹性研究

利用双曲-双温两步热传导和热电子崩力模型,考虑到晶格温度与应变速率的耦合效应,得到了用于描述飞秒激光作用下金属薄膜热力效应的超快热弹性模型。以飞秒脉冲激光辐照金属铜薄膜为例,运用具有人工粘性和自适应步长的有限差分算法,对不同能量密度和脉冲宽度条件下薄膜体内温度场和应力场的变化规律进行了数值模拟,对比分析了电子晶格耦合系数对超快加热过程的影响。结果表明,飞秒脉冲激光辐照早期为明显的非平衡加热过程,电子温度迅速升高,而晶格温度的升高却相对较慢;激光辐照早期的热力耦合效应导致薄膜前表面附近的热应力表现为压应力,随着时间的推移,热应力由压应力转变为张应力,为激光加工和激光对抗提供了理论参考。     

亚皮秒脉冲激光辐照硅薄膜热效应的模拟研究

基于Boltzmann方程,采用了Chen J K等人建立的自相关模型,考虑了Si薄膜的热容、热导率、弛豫时间等热力学参量随温度非线性变化的影响.采用有限差分法,数值求解了脉宽为500 fs的激光脉冲辐照2 μm厚硅膜的自相关模型.分析了膜表面载流子浓度、载流子温度、晶格温度等随入射激光功率和脉宽等的变化规律.结果表明：在脉冲辐照初期（t<0.68 ps）,载流子和晶格之间存在着明显的非热平衡性,之后通过相互之间的弛豫碰撞,逐渐达到热平衡,载流子热容是引起载流子温度在早期迅速上升的原因;载流子温度速率方程中单光子吸收、载流子-晶格能量交换和载流子能流变化率对载流子温升影响较大,而多光子吸收、双极能流和带隙能量变化率对载流子温升的影响较小,可以忽略;较高脉冲激光能量（Ф＞0.02 J·cm－2）辐照Si膜,会引起载流子密度方程中的俄歇复合项增大,从而使载流子密度下降率增大,导致载流子温度出现双峰.     

超短脉冲激光辐照金属薄膜温升效应的模拟研究

 考虑到材料的质量热容、热导率、驰豫时间等热力学参数随温度非线性变化因素的影响，利用具有人工粘性的、自适应时间步长的前向差分算法，数值求解了电子-晶格双温双曲两步热传导模型，讨论了厚度为50 nm的金膜在0.1 ps脉冲激光辐照下的温升规律。数值结果表明：薄膜前表面自由电子的温度在大约0.27 ps时达到最大值，不同厚度上自由电子达到温度平衡所需的时间大约为1.6 ps，而薄膜温度在整个厚度上达到平衡所需时间为60 ps左右。由电子温度及其温度梯度引起的热电子崩力很可能是造成材料破坏的一个主要因素。     

飞秒激光辐照下单晶硅薄膜中超快能量输运的数值模拟

利用载流子输运模型对飞秒激光辐照下单晶硅亚微米薄膜中的能量输运过程进行数值模拟。研究了不同辐照能量密度和不同激光波长对载流子密度和温度超快变化过程的影响规律。结果表明,在800nm激光辐照下,不同入射能量密度仅影响载流子密度和温度响应的峰值,但达到峰值的时刻不变。平衡态的恢复过程受入射能量密度影响很小。在不同波长激光辐照下,光子能量越大,载流子密度和温度达到峰值所用时间越短,对应峰值越大,但衰减速度也越快。当入射光子能量大于单晶硅的直接带隙时,快速衰减时间常数可以与载流子能量弛豫时间相当。     

短脉冲激光加工硅膜的传热过程及烧蚀图形的二维计算

为研究短脉冲激光辐照硅膜表面后的能量传输过程,基于双温方程的计算方法以及自由电子气理论,建立了求解能量传输方程的二维有限元模型.针对红外以及可见光波段的激光,通过限制硅膜的大小,有效地控制了计算的精度,并得到电子温度与热流的时间以及空间分布.计算结果表明,激光诱导产生的等离子体密度极大地影响了硅膜表面的反射率及光吸收系数;通过分析电子热流密度随时间的变化曲线,得到硅膜内部能量的传输过程;在激光作用过程中,硅膜内部晶格温度始终保持在熔点以下,证明了等离子体密度是激光烧蚀硅膜的主导因素;预测了激光烧蚀的图形,并分析了不同波长的激光烧蚀图形与高斯曲线的关系.     

飞秒激光多脉冲烧蚀镍钛合金的数值模拟

为了研究飞秒激光多脉冲累积效应对镍钛合金材料的影响,通过考虑多脉冲之间的时间间隔改写激光光源项,利用改进的双温模型,采用有限差分法,对飞秒激光三脉冲烧蚀镍钛合金的温度场分布进行数值模拟,得到了电子和晶格温度随时间和烧蚀深度的演化规律.分析了多脉冲累积效应的内在机理;讨论了三脉冲条件下不同参量对电子和晶格温度的影响.结果表明:镍钛合金在飞秒激光三脉冲的作用下,电子有3个递增的峰值温度,相比单脉冲的作用,三脉冲使电子和晶格温度明显升高;多脉冲的时间间隔直接影响多脉冲的累积效应;脉冲宽度影响电子的峰值温度和达到峰值温度所用的时间;激光能量密度影响电子和晶格的温度;电声耦合常量对电子与晶格的耦合时间和电子晶格的平衡温度也有重要影响.     

脉宽对中红外激光带内损伤HgCdTe材料的影响

研究了脉宽对于中红外脉冲激光带内损伤碲镉汞（HgCdTe）材料阈值的影响,使用一维自洽模型对激光辐照HgCdTe材料程中的载流子数密度,载流子对数目流,载流子对能流,载流子温度和材料晶格温度等相关参数进行仿真计算。仿真结果表明,波长2.85 μm,脉宽30 ps～10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值为200～500 mJ/cm2。其中,300 ps～3 ns脉冲激光的损伤阈值相近,均为200 mJ/cm2且低于其他脉宽激光的损伤阈值。搭建实验光路并进行相关实验验证仿真模型的正确性。实验发现,波长2.85 μm、脉宽300 ps的单脉冲激光带内辐照HgCdTe材料的损伤阈值在200 mJ/cm2左右。相同条件下,10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值约474 mJ/cm2。百皮秒脉冲激光对HgCdTe材料的损伤过程结合了热击穿和光学击穿效应,其独特的毁伤机理加剧了材料的损伤。     

激光对半导体材料损伤的机理研究

研究了半导体材料对激光的吸收机制。运用一维热传导方程以及载流子耦合扩散方程研究了激光与半导体材料相互作用的热输运、自由载流子输运过程。分析了半导体材料的热学损伤、力学损伤,以及光电探测器的击穿损伤机制。应用数值模拟的方法对Nd:YAG脉冲激光(1.06μm)辐照下感兴趣的半导体材料PbS内部瞬时温度场分布进行了模拟。     

Combined continuum-atomistic modeling of ultrashort-pulsed laser irradiation of silicon

Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm², the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.     

Ultrafast thermoelasticity modeling of microbump formation irradiated by femtosecond laser

Finite element method and ultrafast thermoelasticity model are combined to simulate the microbump formation irradiated by a femtosecond laser. It has been shown that the effect of microbump formation is related to the characteristic of incident femtosecond laser and the thermoelasticity properties of the film. The numerical results exhibit good agreements with the experimental results in both the shape and height of the conical microbump structure, which verify the effectiveness of the ultrafast thermoelasticity model in experiments. It should be helpful for selecting appropriate materials for nanotexturing of thin films by ultrafast lasers.     

Effect of ballistic electrons on ultrafast thermomechanical responses of a thin metal film

The ultrafast thermomechanical coupling problem in a thin gold film irradiated by ultrashort laser pulses with different electron ballistic depths is investigated via the ultrafast thermoelasticity model. The solution of the problem is obtained by solving finite element governing equations. The comparison between the results of ultrafast thermomechanical coupling responses with different electron ballistic depths is made to show the ballistic electron effect. It is found that the ballistic electrons have a significant influence on the ultrafast thermomechanical coupling behaviors of the gold thin film and the best laser micromachining results can be achieved by choosing the specific laser technology(large or small ballistic range).In addition, the influence of simplification of the ultrashort laser pulse source on the results is studied, and it is found that the simplification has a great influence on the thermomechanical responses, which implies that care should be taken when the simplified form of the laser source term is applied as the Gaussian heat source.     

数值模拟飞秒激光加热金属的热电子发射

研究了超短超强激光脉冲与薄膜靶相互作用中产生的电子热发射.当超短激光脉冲与薄膜靶相互作用时,首先入射超短脉冲激光对吸收深度内的自由电子进行热激发,接下来热激发电子将能量传递到附近的晶格,再通过电子和晶格二体系的热传导,以及电子晶格间的热耦合,将能量传递到材料的内部.因此,电子在皮秒级甚至更短的时间内不能与晶格进行能量耦合,使电子温度超出晶格温度很多,电子热发射就变得非常明显了.用双温方程联合Richardson-Dushman方程的方法对飞秒脉冲激光照射金属靶的电子热发射进行了研究,结果发现电子热发射对飞     

Theoretical studies of ultrafast ablation of metal targets dominated by phase explosion

Ultrashort pulse laser ablation of metallic targets is investigated theoretically through establishing a modified two-temperature model that takes into account both the temperature dependent electron–lattice coupling and the electron–electron-collision dominated electron diffusion processes for higher electron temperature regime. The electron–lattice energy coupling rate is found to reduce only slowly with increasing pulse duration, but grow rapidly with laser fluence, implying that the melting time of metallic materials decreases as the laser intensity increases. By taking phase explosion as the primary ablation mechanism, the predicted dependences of ablation rates on laser energy fluences for different laser pulse widths match very well with the experimental data. It is also found that during phase explosion the ablation rate is almost independent of the pulse width, whereas the ablation threshold fluence increases with the pulse duration even for femtosecond pulses. These theoretical results should be useful in having proper understanding of the ablation physics of ultrafast micromachining of metal targets. PACS 52.50.Jm; 61.80.Az; 72.15.Cz; 79.20.Ap; 79.20.Ds     

利用一维原子链模型研究薄膜瞬态结构变化

对于晶格结构响应的仿真与实验有助于我们理解激光激发引起的动态过程.利用一维原子链模型研究了激光加热后由于温度分布不均匀性产生的热应力对晶格的影响,该模型的计算结果与使用超快X射线衍射获得的实验结果相符合.该模型为研究光激发金属以及半导体等材料的超快晶格动力学提供了理论分析基础.     

Numerical simulation of ultrafast expansion as the driving mechanism for confined laser ablation with ultra-short laser pulses

Recently, a so-called “directly induced” laser ablation effect has been reported, where an ultra-short laser pulse (660 fs and 1053 nm) irradiates a thin Mo film through a glass substrate, resulting in a “lift-off” of the irradiated layer in form of a thin, solid, cylindrical fragment. This effect provides a new and very energy-efficient selective structuring process for the Mo back electrode in thin-film solar cell production. To understand the underlying physical mechanisms, a 3D axisymmetric finite element model was created and numerically solved. The model is verified by a direct comparison of experimental and numerical results. It includes volume absorption of the laser pulse, heat diffusion in the electron gas and the lattice, thermal expansion of the solid phase and further volume expansion from phase transition to fluid and gas, and finally the mechanical motion of the layer caused by the resulting stress wave and the interaction with the substrate. The simulation revealed that irradiation of the molybdenum layer with an ultra-short pulse causes a rapid acceleration in the direction of the surface normal within a time frame of a hundred picoseconds to a peak velocity of about 100 m/s. The molybdenum layer continues to move as an oscillating membrane, and finally forms a dome after about 100 ns. The calculated strain at the edges of the dome exceeds the tensile stress limit at fluences that initiate the “lift-off” in experimental investigations. In addition, the simulation reveals that the driving mechanism of the “lift-off” is the ultrafast expansion of the interface layer and not the generated gas pressure.     

Effect of Pulse Width and Fluence of Femtosecond Laser on Electron--Phonon Relaxation Time

The electron phonon relaxation time as functions of pulse width and fluence of femtosecond laser is studied based on the two-temperature model. The two-temperature model is solved using a finite difference method for copper target. The temperature distribution of the electron and the lattice along with space and time for a certain laser fluence is presented. The time-dependence of lattice and electron temperature of the surface for different pulse width and different laser fluence are also performed, respectively. Moreover, the variation of heat-affected zone per pulse with laser Auence is obtained. The satisfactory agreement between our numerical results and experimental data indicates that the electron-phonon relaxation time is reasonably accurate with the influences of pulse width and Auence of femtosecond laser.