Size-induced effect on cathode luminescence spectra of CsI(Na) and CsI(Tl) crystals

We investigated the cathode luminescence characteristics of CsI(Na)and CsI(Tl)crystals by the spectrum and structure properties at room temperature.We fabricated three different sizes of CsI(Na)and CsI(Tl)crystals and measured their luminescence spectra under cathode rays.We found that CsI(Na)cathode luminescence peaks appear at 420 and 305 nm,and CsI(Tl)cathode luminescence peaks are 540 and 410 nm,the grain size affects CsI(Na)luminescence significantly,and the Na-related420 nm luminescence intensified relatively when the average grain size reaches~20μm,which becomes weak when the grain size is down to nano-scale.But the cathode luminescence spectra of CsI(Tl)crystals with different size have no obvious changes.Our explanations for these phenomena are that the different impurities in the same host material CsI lead to different luminescence mechanisms.These cathode luminescence characteristics indicate the suitability of CsI(Na)and CsI(Tl)crystals to match photomultiplier tube for large area crystal detector development.     

Large excitonic enhancement of optical refrigeration in semiconductors

We present a theoretical analysis for laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. Our cooling threshold analysis shows that, at low temperatures, the presence of the excitonic resonance in the luminescence is essential in competing against heating losses. The theory includes self-consistent energy renormalizations and line broadenings from both instantaneous mean-field and frequency-dependent carrier-carrier correlations, and it is applicable from the few-Kelvin regime to above room temperature.     

The structure and mechanical properties of Fe2AlMn single crystals

The microstructure and mechanical properties of off-stoichiometric single-crystal Fe₂AlMn have been investigated. After casting, the alloy contained two sets of thermal antiphase boundaries, (a/4)?111? and (a/2)?100?, which are attributed to the fact that the compound solidifies into a bcc structure and subsequently orders to a B2 structure and then a L2₁ structure respectively upon further cooling. Crystals strained under tension at room temperature in air at 1s^?1 showed 6% elongation, whereas specimens strained at 1?×?10^?5?s^?1 showed no elongation, indicating that the compound is sensitive to the testing environment. Fracture occurred on {100} in both cases. Compression tests showed that a yield anomaly was present at intermediate temperatures, with the peak yield strength occurring at about 800?K, which is slightly below the L2₁–B2 transition temperature of 898?K. The slip systems were found to be ?111?{110} at room temperature and 800?K. Transmission electron microscopy observations showed fourfold-dissociated ?111? dislocations in specimens strained at room temperature but only paired ?111? dislocations in specimens strained at the peak temperature. The room-temperature yield strength of quenched specimens increased with increasing quench temperatures from 700 to 1100?K.     

Near-infrared ultrabroadband luminescence spectra properties of subvalent bismuth in CsI halide crystals

We observed two ultrabroadband near-infrared (NIR) luminescence bands around 1.2 and 1.5 μm in as-grown bismuth-doped CsI halide crystals, without additional aftertreatment. Dependence of the NIR emission properties on the excitation wavelength and measurement temperature was studied. Two kinds of NIR active centers of subvalent bismuth and color centers were demonstrated to coexist in Bi:CsI crystal. The eye-safe 1.5 μm emission band with an FWHM of 140 nm and lifetime of 213 μs at room temperature makes Bi:CsI crystal promising in the applications of the ultrafast laser and ultrabroadband amplifier.     

Luminescence processes in CsI doped with Na+ and K+ ions

The luminescence bands around 420 nm and 370 nm in CsI:Na and CsI:K have been studied by measuring the temperature dependence of decay times and luminescence and its excitation spectra. The bands are due to singlet+triplet localized excitons and to triplet localized excitons, respectively, at low temperature. Zero field splitting and life time amount to 0.2 meV and 3.3 μs for the 420 nm band, and to 2.1 meV and 1.7 μs for the 370 nm band. Creation processes of 420 nm excitons may not be the same below 40 K and near room temperature.     

闪烁晶体碘化铯在紫外光和X射线激发下的发光特性

室温下掺铊碘化铯(CsI∶Tl)晶体的吸收谱在230~320 nm范围内有3个特征峰:310 nm(4 eV)、270nm(4.6 eV)和245 nm(5.1 eV)。采用这3种不同激发能量(对应不同激发机制)的近紫外(UV)光激发得到的荧光(PL)光谱相同。这些PL谱与钨(W)靶X射线激发的辐照致荧光(RL)谱也类似。经分峰计算,PL和RL均含有4种熟知的3.1 eV(400 nm)、2.55 eV(486 nm)、2.25 eV(550 nm)和2.1 eV(590 nm)发光组分,但RL中2.1 eV组分高于PL,同时2.55 eV组分又低于PL。分析认为,这一差异来自于X射线对晶体的辐照损伤Tl+Va+、Tl0Va+,相关的2.1 eV吸收峰与2.55 eV发光带重叠。结果表明:X射线比紫外光更易产生损伤从而影响晶体CsI∶Tl的发光特性。     

The kinetics of exciton photoluminescence in mercuric iodide

Time-resolved photoluminescence (TRPL) of red mercuric iodide single crystal is measured at low temperatures and its two-photon luminescence is measured at room temperature. Sharp near band-gap luminescence is observed around 530 nm and was ascribed to radiative annihilation of free and bound excitons; the phonon replica of exciton luminescence are found between 533 and 540 nm at low temperatures. TRPL experiment reveals that near band-gap luminescence comprises fast and slow decay components and shows the different relaxation processes between free and bound exciton annihilation. Luminescence of bound excitons steeply lowers with increasing temperature and disappears about 40 K. A luminescence tail band is observed around 540 nm that is ascribed to defects in the anion sublattice. The temporal behavior of the tail band is described by rate equations very well. A broad luminescent band appears at 630 nm. The decay curves suggest that the luminescence is ascribed to the radiative recombination of donor-acceptor pairs and there are two kinds of mechanisms to control the decay. At room temperature, a luminescent band appears at the band-gap region, which shows the band-gap at room temperature is about 2.125 eV.     

Recombination luminescence lifetimes and the self-trapped excition in alkali halides

The decay of recombination luminescence in undoped KI and RbI at low temperatures has been measured following pulsed excitation by two-photon absorption and other methods. Several distinct exponential components are observed whose decay times vary with temperature. The most notable case is the principal component of the intrinsic luminescence in KI, whose decay time increases exponentially from 2 μsec at 12 K to 280 μsec at 1.38 K. The data are accounted for in terms of changing populations within a zero-field-split triplet state of the self-trapped excition. Evidence concerning the origin of a second luminescent triplet state in KI, RbI, and CsI is discussed; this state is similar to those of the self-trapped excition, but may involve an extrinsic perturbation.     

Morphology of strain-induced crystallization of natural rubber. Part II. X-Ray studies on cross-linked vulcanizates

The results of wide- and small-angle X-ray studies on bulk vulcanizates of natural rubber are described. At room temperature no discrete X-ray peaks occur at small angles, even for highly strained (700%) specimens for which a significant degree of crystallinity is present at room temperature. Below the isotropic melting point of the network, discrete small-angle X-ray scattering develops for both unstrained and strained specimens. The Bragg periodicity corresponds closely to the longitudinal lamellar spacing from electron micrographs of thin films under corresponding conditions. The X-ray long period exhibits significant thermal reversibility. Upon heating, following initial crystallization at ?25°C, the long period continuously increases from about 140 Å at ?25°C to about 250 Å at 17°C. After heating, progressive cooling from room temperature results in continuous decreases in long period and at least 80% of the initial increase on heating is recovered. These results in conjunction with electron microscopy data (Part I) strongly suggest that thermally reversible changes in physical lamellar periodicity occur for natural rubber and are discussed in detail in light of current concepts concerning long period reversibility in bulk polymers.     

Superradiant properties of a suspension of composite nanoparticles

The characteristics of gold nanoparticles coated with silicon dioxide containing embedded dye molecules are experimentally investigated at room and liquid-nitrogen temperatures. The origin of the observed narrowing of the luminescence line upon cooling is discussed. Model analysis of the nanosystem under study indicates that the observed behavior cannot be related to the temperature dependence of individual parameters of the components of the medium. The effect is explained by the occurrence of nonlinear feedback that leads to the enhancement of phase synchronization between the polarizations of the active transitions in the dye molecules and plasmons. This effect is an analog of plasmon polariton superradiance.     

Luminescence decay in spray-pyrolyzed Cds

We report the room temperature luminescence decay of spray pyrolyzed CdS, which is extremely similar to the luminescence decay of amorphous silicon hydrogen alloys at liquid helium temperatures. We suggest that the luminescence decay in both of these materials is due to localized electrons and holes recombining by radiative tunnelling.     

Luminescence and relaxed excited state origin in CsI:Pb crystals

Emission and excitation spectra, luminescence polarization and decay kinetics have been studied for CsI:Pb crystals in the 0.36-300 K temperature range. The origin of the excited states responsible for the optical characteristics has been discussed. It has been concluded that the doublet ≈3.70 eV absorption (excitation) band is caused by the electronic transitions into the Pb²⁺ triplet state split due to the presence of a cation vacancy near a Pb²⁺ ion, while the higher-energy bands are of the charge-transfer origin. Like in CsI:Tl, four emission bands of CsI:Pb have been found to belong to the main luminescence centres. Two emission bands, peaking at 3.1 and 2.6 eV, are suggested to arise from the triplet relaxed excited state of a Pb²⁺ ion. Two visible emission bands, peaking at 2.58 and 2.23 eV, are interpreted as the luminescence of an exciton localized near the Pb²⁺ ion.     

Ion-beam sputtering deposition of CsI thin films

Stoichiometric CsI thin films were deposited by Ar ion-beam sputtering of a CsI target at room temperature. The sputtered 100-nm thick CsI films obtained were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and quantum efficiency (QE) measurements. As it was expected, the chemical, morphological, crystalline and photo-emissive properties of CsI films obtained depended on the deposition parameters. Comparison with results obtained for evaporated CsI films indicated that surface morphology, i.e., the effective photo-emissive surface area, is one of the important parameters in influencing the QE . PACS 81.15.-z; 79.60.Dp; 68.37.Ps     

Temperature Effects of CsI(Tl) Crystal Detector with APD Readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/℃ in the region from －2℃ to 8℃, and by 0.33%/℃ in the region from 8℃ to 25℃, while the gain of the tested APD decreases by －3.68%/℃ (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV γ ray from ¹³⁷Cs radiation source.     

高低温条件下氟化锂材料的离子激发发光光谱分析

在北京师范大学GIC4117串列加速器原有离子激发发光(ion beam induced luminescence,IBIL)分析靶室基础上,安装了可实现80—900 K温度范围内精确控温的冷热样品台,实现高低温条件下IBIL光谱的测量.添加金硅面垒探测器,在离子辐照材料样品过程中同步采集背散射离子的计数,实现束流的在线监测.在不同温度下,利用2 MeV H~+束轰击氟化锂样品,获得的IBIL光谱中可明显观察到温度对不同发光中心发光效果的影响:激子峰和杂质峰发光在低温条件下更为清晰;高温时各类型F色心的发光强度在较小的注量下即可达到饱和值或开始衰减.辐照初期受扰激子峰(296 nm)发光强度的上升过程表明不能排除受扰激子峰与点缺陷发光中心相关的可能性,激子峰强度的上升源自低注量时核弹性碰撞产生的应变键;温度对空位迁徙速率及非辐射复合的影响是造成发光强度随注量演变差异的重要原因.     

MBE-grown Ridge-waveguide InGaAs/InGaAsP Strained Quantum Well Lasers at 2 μm Wavelength

1 horottionFor a long time GaSh--based IILV antimonial material is the main material systemfor nddinfrared semiconductor l...[l' 2] because of its wide wavelength range Of 1. 7 4. 5 mp offering a convenient choice for different applications. HOwever there aredifficuhies in its material growth and device fabrication. Iall--based InGaAs/InGaAsPstrained QW Inaterial become attractive for nddinfrared semiconductor lasers because ithas relatively loW thermcrresistance and serial resistance a…     

MBE-grown Ridge-waveguide InGaAs/InGaAsP Strained Quantum Well Lasers at 2 μm Wavelength

The result of molecular beam epitaxy (MBE)-grown ridge-waveguide InGaAs/ InGaAsP/InP strained quantum well lasers at 2 μm wavelength is reported. The pulsed electrical luminescence spectrum at room temperature is observed with peak wavelength of about 1.98 μm. At 77 K the lasers become lasing in pulse regime, with threshold current of about 18～30 mA, peak wavelength of about 1.87～ 1. 91 μm, and single longitudinal mode operation in the current range of 160～230 mA.     

High-pressure X-Ray diffraction and optical absorption studies of CsI

Static-compression data and absorption spectra for CsI have been collected to 61 GPa (610 kbar) at room temperature. The band gap closes with increasing pressure and CsI is expected to metallize at 105 (± 15) GPa. A second order phase transition to the CuAu I structure is observed at 39 (± 1) GPa. The elastic constants measured at low pressures do not predict that an elastic instability, and hence a structural distortion, would occur at elevated pressures. Similarly, an ionic pair-potential model which reproduces the properties of CsI at low pressures does not show the distortion to be stabilized at high pressures.     

Comparisons of spectral properties of CsI:T1 crystals with various Tl(+)-doped concentrations

Absorption Spectra and Photoluminescence (PL) spectra of CsI: T1 crystals with various T1+-concentrations were measured for absorption and luminescent research in CsI: T1. Their UV absorption spectra contained three peaks at 297, 273 and 247 nm. The experiments were demonstrated that the peaks in the high T(1+)-concentration CsI: T1 crystals are broader than ones in the low T(1+)-concentration crystals and their absorption A-peak shift by 20 nm, but their PL with UV excitations are similar. It was suggested that lattice distortions in the high T1+-concentration CsI: T1 lead to the changes in absorption or fluorescence excitation peaks, but no changes in the fluorescence band widths and locations at room temperature.     

Structure and luminescence of CsI:Eu columnar films

Europium doped columnar films of CsI are produced by vacuum condensation. Eu²⁺ ions in the CsI:Eu films lead to the formation of a narrow (0.18 eV), intense luminescence band with a maximum at 456 nm, which is excited by x-rays, as well as by photons of various energies. The spectral and kinetic characteristics of the emission depend on the amount of activator and on the conditions under which the film is prepared and stored. The nature of the luminescence centers is determined by structural formations that contain divalent europium ions.