Differences between surface and bulk refractive indices of a-InxSe1−x

Thin films of amorphous indium selenide compounds (a-In_xSe_1−x) are important, e.g. for photovoltaics. The feature of merit in such applications is also the real part of refractive index n of this material. The data on n in literature are divergent. In this paper, the results of investigations on n in the bulk as well as in the interface layers of thin films of a-In_xSe_1−x are presented. The measurements had been performed using optical transmittance and reflectance in spectral range from 1.24 to 1.96 eV of linear polarized radiation that hit the samples with angles of incidence from 0° to 80°. Investigations had been done for sample temperatures from 80 to 340 K. It was found that the refractive index for areas at the free surface n_f is bigger than the refractive index n_b at the interface of thin film-substrate. The averaged over thin film thickness value of real part refractive index have the biggest value in all spectral range. Values of these coefficients increase with increasing the temperature.     

Influence of thermal annealing on optical and structural properties change in Bi-doped Ge30Se70 thin films

The effect of annealing on the structural and optical properties of thermally evaporated Ge₃₀Se₇₀ and Ge₃₀Se₆₀Bi₁₀ thin films is reported in this paper. The prepared films were thermally annealed at 250°C to optimize the optical properties which can be used for the optical device fabrication. X-ray diffraction study revealed no structural transformation whereas the surface morphology changed as observed from scanning electron microscopy. The optical properties of the deposited and annealed films have been investigated by using a UV–VIS–NIR spectrophotometer in the wavelength range of 400–1100?nm. The optical band gap of the Ge₃₀Se₇₀ annealed film is found to be increased while the energy gap of the Bi-doped annealed Ge₃₀Se₆₀Bi₁₀ thin film decreased which is explained by the chemical disorderness, defect states and density of localized states in the mobility gap. The Tauc parameter and Urbach energy which measure the degree of disorder changed with the annealing process. The transmittivity increases and the absorption power decreases in the Ge₃₀Se₇₀ annealed film, whereas the reverse effect is noticed for the annealed Ge₃₀Se₆₀Bi₁₀ thin film. The irreversible nature of this change can be useful for optical recording purposes.     

Thermal kinetics and short range order parameters of Se80X20 (X = Te,Sb) binary glasses

Bulk Se₈₀Te₂₀ and Se₈₀Sb₂₀ glasses were prepared using the melt–quench technique. Differential scanning calorimetry (DSC) curves measured at different heating rates (5 K/min≤α≤50 K/min) and X-ray diffraction (XRD) are used to characterize the as-quenched specimens. Based on the obtained results, the activation energy of glass transition and the activation energy of crystallization (E _g, E _c) of the Se₈₀Te₂₀ glass are (137.5, 105.1 kJ/mol) higher than the corresponding values of the Se₈₀Sb₂₀ glass (106.8, 71.2 kJ/mol). An integer n value (n=2) of the Se₈₀Te₂₀ glass indicates that only one crystallization mechanism is occurring while a non-integer exponent (n=1.79) in the Se₈₀Sb₂₀ glass means that two mechanisms are working simultaneously during the amorphous–crystalline transformations. The total structure factor, S(K), indicates the presence of the short-range order (SRO) and the absence of the medium-range order (MRO) inside the as-quenched alloys. In an opposite way to the activation energies, the values of the first peak position and the total coordination number (r ₁, η ₁), obtained from a Gaussian fit of the radial distribution function, of the Se₈₀Te₂₀ glass are (2.42 nm, 1.99 atom) lower than the corresponding values (2.55 nm, 2.36 atom) of the Se₈₀Sb₂₀ specimens.     

Structural and optical properties of Ge20SbxSe80-x films

20 Sb_xSe_80-x (where 10≤x≤40 at.%) thin films. The optical absorption results indicate that the absorption mechanism is due to non-direct transition. The optical gap of the as-deposited films was found to decrease monotonically with increasing antimony content, a result which was interpreted on the basis of the chemical-bond approach proposed by Bicerno and Ovshinsky. Annealing of the Ge₂₀Sb₄₀Se₄₀ films at temperatures higher than 450 K was found to decrease the optical gap and increase the refractive index of the investigated film. Increasing the amount of crystalline GeSe₂ and Sb₂Se₃ phases while increasing the annealing temperature could be responsible for the continuous decrease of the optical gap of the Ge₂₀Sb₄₀Se₄₀ film. Received: 4 November 1997/Accepted: 16 December 1997     

WO3 oxide film formation on tungsten in O2/H2 discharges

The features of tungsten oxidation in a flowing O₂ or O₂/H₂ mixture glow discharge with a hollow cathode are investigated in the cathode, plasma, and afterglow regions at T = 300–350 K. The structure and composition of the samples are analyzed via reflection high-energy electron diffraction, reflection X-ray diffraction, electron probe microanalysis, and X-ray photoelectron spectroscopy. The results of analysis show that the metal surface is covered by a thin film (5–10 nm thick) of amorphous porous hydrated tungsten oxide (WO₃) after its exposure to the discharge and storage in air. The study of the film composition using a time-of-flight mass spectrometer indicates that the WO₃ film contains (WO₃) _n (n = 1–6) clusters and water molecules adsorbed in the pores. After exposure of the polycrystals to the O₂/H₂ discharge, the selective intense oxidation of individual grains is detected in the cathode region; the surrounding areas are subjected to weaker oxidation. The thicknesses of the WO₃ films on neighbouring grains differ by more than tenfold. Such grains can be the source of tungsten dust in plasma installations.     

Infrared tunable diode laser spectroscopy of the Δv = 2 band of 7Li127I

The high-resolution infrared spectrum of the Δv = 2 transitions of ⁷LiI has been measured at temperatures near 1050 K. The observations include vibrational transitions ranging from 2-0 to 10-8. The data were fit to a set of Dunham potential constants complete through the a₆ term, from which the Dunham rovibrational constants were calculated. The band centers for the v = 1-0 and v = 2-0 transitions were determined to be 491.17398 ± 0.00026 cm⁻¹ and 976.73042 ± 0.00038 cm⁻¹, respectively.     

Planar quarter wave stacks prepared from chalcogenide Ge-Se and polymer polystyrene thin films

Planar quarter wave stacks based on amorphous chalcogenide Ge-Se alternating with polymer polystyrene (PS) thin films are reported as Bragg reflectors for near-infrared region. Chalcogenide films were prepared using a thermal evaporation (TE) while polymer films were deposited using a spin-coating technique. The film thicknesses, d∼165 nm for Ge₂₅Se₇₅ (n=2.35) and d∼250 nm for polymer film (n=1.53), were calculated to center the reflection band round 1550 nm, whose wavelengths are used in telecommunication. Optical properties of prepared multilayer stacks were determined in the range 400-2200 nm using spectral ellipsometry, optical transmission and reflection measurements. Total reflection for normal incidence of unpolarized light was observed from 1530 to 1740 nm for 8 Ge-Se+7 PS thin film stacks prepared on silicon wafer. In addition to total reflection of light with normal incidence, the omnidirectional total reflection of TE-polarized light from 8 Ge-Se+7 PS thin film stacks was observed. Reflection band maxima shifted with varying incident angles, i.e., 1420-1680 nm for 45° deflection from the normal and 1300-1630 nm for 70° deflection from the normal.     

Structure formation and mechanisms of DC conduction in thermally evaporated nanocrystallite structure ZnIn2Se4 thin films

ZnIn₂Se₄ is of polycrystalline structure in as synthesized condition. It transforms to nanocrystallite structure of ZnIn₂Se₄ film upon thermal evaporation. Annealing temperatures influenced crystallite size, dislocation density and internal strain. The hot probe test showed that ZnIn₂Se₄ thin films are n-type semiconductor. The dark electrical resistivity versus reciprocal temperature for planar structure of Au/ZnIn₂Se₄/Au showed existence of two operating conduction mechanisms depending on temperature. At temperatures >365 K, intrinsic conduction operates with activation energy of 0.837 eV. At temperatures <365 K, extrinsic conduction takes place with activation energy of 0.18 eV. The operating conduction mechanism in extrinsic region is variable range hopping. The parameters such as density of states at Fermi level, hopping distance and average hopping energy have been determined and it was found that they depend on film thickness. The dark current–voltage characteristics of Au/n-ZnIn₂Se₄/p-Si/Al diode at different temperatures ranging from 293–353 K have been investigated. Results showed rectification behavior. At forward bias potential <0.2 V, thermionic emission of electrons from ZnIn₂Se₄ film over a potential barrier of 0.28 V takes place. At forward bias potential >0.2 V, single trap space charge limited current is operating. The trap concentration and trap energy level have been determined as 3.12×10¹⁹ cm⁻³ and 0.24 eV, respectively.     

Preparation and thermoelectric power of SnBi4Se7

Polycrystalline samples of Bi₂Se₃ and a stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ have been prepared and characterized by X-ray powder diffraction analysis. At room temperature the carrier concentration values are n?=?1.1?×?10¹⁹?cm^?3 for Bi₂Se₃ and n?=?0.53?×?10¹⁹?cm^?3 for SnBi₄Se₇. The thermoelectric power has been measured over the temperature range 90–420?K. The thermoelectric power of Bi₂Se₃ is higher than that for SnBi₄Se₇, which shows that the Sn impurity has an acceptor character. Therefore, doping Bi₂Se₃ with tin atoms does not improve thermoelectric properties of this material, due to decrease the value of the power factor σS ². Transport properties of the studied polycrystalline samples are characterized by a mixed transport mechanism of free carriers. It is necessary to add more than one Sn atom to the Bi₂Se₃ compound in order to suppress the electron concentration by one electron. Such behaviour of the dopant is explained by the formation of various structural defects. Besides the dominant substitutional defect, Sn_Bi, tin atoms also form uncharged defects, corresponding to seven-layer lamellae of the composition Se–Bi–Se–Sn–Se–Bi–Se which corresponds to the structure of the SnBi₂Se₄.     

First-principles study on the structure,electronic and magnetic properties of HoSin （n=1-12, 20） clusters

The structure, electronic and magnetic properties of HoSin（n= 1 - 12, 20） clusters have been widely investigated by first-principles calculation method based on density flmctional theory （DFT）. From our calculation results, we find that for HoSin（n=1- 12） clusters except n = 7.10, the most stable structures are a replacement of Si atom in the corresponding pure Sin＋1 clusters by Ho atom. The doping of Ho atom makes the stability of Si clusters enhance remarkably, and HoSin（n = 2, 5, 8, 11） clusters are more stable than their neighboring clusters. The magnetic moment of Ho atom in HoSin （n = 1 - 12, 20） clusters mainly comes from of electron of tto, and never quenches.     

Absorption measurements of H2O at high temperatures using a CO laser

Absorption of CO laser radiation (v = 8→7, J = 14→15 transition at 1901.762 cm^-1) by H₂O has been studied in shock-heated H₂/O₂/Ar mixtures over the temperature range 1300–2300 K. This laser transition is nearly coincident with the v₂-band 12_3,10←11_2,9 transition of H₂O at 1901.760 cm^-1, thereby providing a convenient and sensitive absorption-based H₂O diagnostic useful for studies of combustion. The collision-broadening parameter for this H₂O line, due to broadening by Ar, was determined to be 2γ (cm^-1atm^-1) = 0.027 (T/1300)^-0.9 in the temperature range 1300–2300 K. Calculations of the H₂O absorption coefficient (at 1901.762 cm^-1) based on this expression for 2γ are presented for the temperature range 300–2500 K and pressure range 0.3–1 atm.     

Microwave electrophysical properties of superionic crystals Ag2HgI4

The paper concerns itself with the investigation results of temperature dependencies of electric conduction and dielectric properties of Ag₂Hgl₄ crystals in the frequency range of 10⁷–7,8·10¹⁰ Hz. The obtained data have shown that in α-phase at T=326 K, the electric conductivity σ is proportional v^0,28 in the frequency range of 10⁷–10⁹ Hz and σ is proporti onal v^0,5 in the range of (1,1–78)·10⁹ Hz. The dependence σ(v) in the range of (1,1–78)·10⁹ Hz may be conditioned by the jumping mechanism of the conductivity and low frequency oscillations of the crystal lattice. It is believed, tha in the σ-phase of Ag₂Hgl₄ a condition of the existence of the ionic polaron is satisfied. The activation energy of the polaron is ΔE_p=0,09 eV.     

Forbidden rotational spectra of axially symmetric polar molecules

In this paper we consider the rotational transitions induced by centrifugal distortion in polar or quasipolar symmetric top molecules belonging to the point groups C_n and C_nv (n ≥ 3). It is shown that in this series only the molecules of point groups C₃, C_3v, C₄, and C_4v may possess rotational spectra induced by first-order centrifugal distortion. A general expression is given for the effective dipole moment operator and for its matrix elements. The peak absorption coefficients for some of the strongest ΔK = 3 transitions of the CH₃D molecule have been calculated and compared with the peak absorption coefficients of allowed transitions.     

Effect of heat treatment on the optical and electrical transport properties of Ge15Sb10Se75 and Ge25Sb10Se65 thin films

The effect of heat treatment on the optical and electrical properties of Ge₁₅Sb₁₀Se₇₅ and Ge₂₅Sb₁₀Se₆₅ thin films in the range of annealing temperature 373-723 K has been investigated. Analysis of the optical absorption data indicates that Tauc's relation for the allowed non-direct transition successfully describes the optical processes in these films. The optical band gap (E_g^opt.) as well as the activation energy for the electrical conduction (ΔE) increase with the increase of annealing temperature (T_a) up to the glass transition temperature (T_g). Then a remarkable decrease in both the E_g^opt. and ΔE values occurred with a further increase of the annealing temperature (T_a>T_g). The obtained results were explained in terms of the Mott and Davis model for amorphous materials and amorphous to crystalline structure transformations. Furthermore, the deduced value of E_g^opt. for the Ge₂₅Sb₁₀Se₆₅ thin film is higher than that observed for the Ge₁₅Sb₁₀Se₇₅ thin film. This behavior was discussed on the basis of the chemical ordered network model (CONM) and the average value for the overall mean bond energy 〈E〉 of the amorphous system Ge_xSb₁₀Se_90−x with x=15 and 25 at%. The annealing process at T_a>T_g results in the formation of some crystalline phases GeSe, GeSe₂ and Sb₂Se₃ as revealed in XRD patterns, which confirms our discussion of the obtained results.     

Interaction of sodium fullerene derivatives with trimethylchlorosilane

Soluble dimer compounds of the general formula [C₆₀(Me ₃Si)_n]₂ (where n = 3, 5, 7, or 9 and M _e = CH₃) and a soluble monomer compound, C₆₀(Me ₃Si)₁₂, are synthesized by the reaction of the compound C₆₀Na_n(THF)_x (where n = 4, 6, 8, 10, or 12 and THF = tetrahydrofuran) with trimethylchlorosilane Me ₃SiCl. The compounds synthesized are identified using IR and NMR spectroscopy and mass spectrometry. An irreversible endothermic effect exhibited by the [C₆₀(Me ₃Si)₇]₂ compound in the temperature range 448–570 K is revealed by dynamic adiabatic calorimetry. From analyzing the experimental results, it becomes possible for the first time to demonstrate the structural flexibility of the fullerene in the following sequence of reactions: $\begin{array}{*{20}c} {C_{60} \xrightarrow[{ - 12C_{10} H_8 }]{{ + 12NaC_{10} H_8 }}C_{60} Na_{12} \xrightarrow[{ - 12NaCl}]{{ + excess Me_3 SiCl}}C_{60} (Me_3 Si)_{12} \xrightarrow[{ - 12Me_3 SiCl}]{{ + HCl(gas)}}[C_{60} H_n ]\xrightarrow[{ - 1/2nH_2 }]{{hv}}C_{60} } \\ {C_{60} \xrightarrow[{ - 8C_{10} H_8 }]{{ + 8NaC_{10} H_8 }}C_{60} Na_8 \xrightarrow[{ - 8NaCl}]{{ + excess Me_3 SiCl}}[C_{60} (Me_3 Si)_7 ]_2 \xrightarrow{{573K}}\begin{array}{*{20}c} {products of the} \\ {transformation of + } \\ {Me_3 Si groups} \\ \end{array} C_{60^ - } } \\ \end{array} $      

Sound velocity in single crystals of synthetic opals

The [111] longitudinal sound velocity (v _L) in a single-crystal synthetic opal has been measured at a frequency of 10 MHz in the temperature range 4.2–300 K. At 300 K, v _L=2.1×10⁵ cm/s. The quantity dv _L/v _{300 K}(T) (where v _T,K?v_{300 K}) in the ranges 4.2–200 and 200–300 K behaves in the way typical of amorphous and crystalline solids, respectively.     

The fabrication of a 1×8 linear array high Tc superconductive infrared detector

A high T_c superconducting 1×8 elements infrared detector has been fabricated by using YBa₂Cu₃O₇ film. Optical measurements gave moderate performance as individual sensitive element. The detectivity D^* is decreased to 10⁸–10⁹ cm Hz^1/2 W⁻¹. Operation temperature is T_c=89 K.     

Upper critical fields of superconducting superconducting rare-earth molybdenum selenides

Upper critical fields, H_c2(T), for superconducting LaMo₆Se₈, La_0.8Eu_0.2Mo₆Se₈, La_0.8Ce_0.2Mo₆Se₈ and PrMo₆Se₈ were measured. For the best material, LaMo₆Se₈, T_c = 11.3 K, (dH_c²/dT)_T=Tc=70 kG/K and and H_c² (4.2 K) = 370 kG. These selenide compounds show promise as very high field superconductors.     

Features of low-temperature thermal expansion of n-type Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> single crystals in magnetic field

Tensometric study of n-type Bi₂Se₃ single crystals in dc magnetic fields to 6 T in a temperature range of 7–23 K detected a weak negative thermal expansion (NTE) in the basal plane. The NTE increases with the field strength and depends on its orientation with respect to the trigonal c axis. In a magnetic field of 6 T, parallel to the c axis, the linear NTE coefficient reaches ?7 · 10^?7 K^?1, and a minimum sample length is reached at a temperature of 13 K, where a Hall carrier concentration maximum is also detected. The found magnetoelastic anomaly can be associated with the topological insulator state.     

Nuclear magnetic resonance in ferromagnetic HCP and FCC 59cobalt

The ⁵⁹Co nuclear magnetic resonance spectra of powdered metal have been investigated in the temperature range from 3 K – 295 K. Both HCP resonance lines, coming from nuclei at the center and the edge of the domain walls (v₁ = 221 MHzv₂ = 214 MHz at 295 K, respectively) have been observed as in bulk material. The quadrupole splitting, directly measured only by Kawakami et al., was verified. The line spacing v_q = 3e²Qq/2I(2I - 1)h is v_q = (178 ± 5) kHz at 295 K. A new line with v = 221.7 MHz at 295 K was found, which is probably due to a stacking fault.The temperature behaviour of the FCC-linewidth is anomalous. Between 3 and 10 K a line splitting due to frequency pulling, already predicted by De Gennes et al. in 1962, was discovered. The frequency shift derived from the splitting of the FCC line at 3 K is δω₀ ≈ 2.51 MHz. The corresponding anisotropy field and zero field ferromagnetic resonance frequency of FCC cobalt are H_A ≈ 1.25 × 10² Oe and ω_e ≈ 2.27 × 10⁹ Hz, respectively.