低温下ZnSe－ZnS多量子阱的光致发光光谱和喇曼散射谱

本文报导了２Ｋ下，在ＧａＡｓ（１００）衬底上用ＭＯＣＶＤ方法生长的ＺｎＳｅ－ＺｎＳ多量子阱材料的光致发光光谱和喇曼散射谱．用共振激发、共振喇曼和共振瑞利散射等方法对各发光谱带和喇曼散射峰的来源和机制进行了鉴别．     

低温下ZnSe-ZnS多量子阱的光致发光光谱和喇曼散射谱

本文报导了2K下,在GaAs(100)衬底上用MOCVD方法生长的ZnSe-ZnS多量子阱材料的光致发光光谱和喇曼散射谱.用共振激发、共振喇曼和共振瑞利散射等方法对各发光谱带和喇曼散射峰的来源和机制进行了鉴别.     

Pico-second spectroscopy of the secondary radiation from resonantly excited excitonic molecules in CuCl

Pico-second time-resolved measurements of the two-photon resonant Raman scattering via excitonic molecules in CuCl were carried out for the first time. The Raman scattering leaving transverse excitons decays as fast as the laser light. When the energy of the incident light falls in the vicinity of the two-photon resonant absorption, both Raman and luminescence lines are simultaneously observed. In case of just resonant excitation, the transient response indicates that the secondary radiation can be decomposed into the Raman and the luminescence components as regards its temporal and spectral behavior.     

Indirect exciton luminescense and Raman scattering in CdI2

Intrinsic luminescence and Raman scattering in 4HCdI₂ have been investigated at 2 K. Weak emission bands observed near the absorption edge are attributed to the phonon-assistes indirect exciton luminescence. Several new Raman lines are observed under resonant excitation in addition to known lines. The symmetry of the phonon modes associated with the indirect transitions as well as with Raman scattering is discussed.     

Transformation of resonant Raman scattering into luminescence in CdxZn1−xTe mixed crystals: Time-resolved spectroscopy

We report an experimental study of time characteristics of secondary emission in Cd_xZn_1-xTe mixed crystals (x = 0.32) under resonant excitation with a picosecond dye laser. When the incident laser frequency is tuned on to the luminescence maximum of localized excitons, the decay curve of the intensity of “Raman-like” lines exhibits a single exponential decay. Off resonance, however, a short-lived component corresponding to Raman scattering appears in addition to the long-lived component. The intensity of the Raman component relative to that of the luminescence component increases with increase of the off-resonance frequency. From these temporal behaviors, we have found, for the first time, the transformation of resonant Raman scattering into luminescence in mixed crystals as a function of incident frequencies.     

Quantum effects of potential fluctuations in GaAs δ-doping superlattices

The electronic and optical properties of δ-doping n-i-p-i superlattices are strongly influenced by the random distribution of donors and acceptors within the doping layers. A Monte-Carlo method is applied to investigate the resulting potential fluctuations and local changes of energy levels and wavefunctions. We study disorder effects on the density of states, the capacitance and the intraband absorption coefficient as a function of excitation level. In addition, the luminescence spectra are calculated and compared to electroluminescence measurements. Excellent agreement is achieved without using any fitting parameters, if the local wavefunction shrinkage of the tail states is included. While contributions of different subbands cannot be resolved in the luminescence, the simulation of conduction band (CB) intraband absorption confirms that this is possible using resonant Raman scattering.     

Optical properties of zinc telluride with cadmium telluride submonolayers

Reflection, luminescence, and Raman spectra of epitaxial ZnTe layers nominally incorporating double CdTe submonolayers were studied. The band of an exciton localized at the potential produced by narrow-gap planar inclusions dominated the luminescence of these heterostructures. The emission parameters of localized excitons (specifically, the ratio of integral emission intensity to localization energy) were determined, and it was found that excitons interact with longitudinal optical phonons of the layer enriched with cadmium. Giant amplification of the Stokes component resonant with the localized exciton level was observed in Raman scattering.     

Raman and luminescence processes under the resonant two-photon excitation of an excitonic molecule in CuCl

Emission spectra and its decay time under the resonant two-photon excitation of an excitonic molecule in CuCl were observed using a tunable dye laser. The Raman and luminescence processes were separated from their different decay times. The ratios of these two processes were estimated for the transverse and longitudinal excitons, respectively, at various band widths of the exciting laser.     

Resonant Raman scattering of optical phonons in self-assembled quantum dots

We have investigated the carrier relaxation mechanism in InGaAs/GaAs quantum dots by photoluminescence excitation (PLE) spectroscopy. Near-field scanning optical microscope successfully shows that a PLE resonance at a relaxation energy of 36 meV can be seen in all single-dot luminescence spectra, and thus can be attributed to resonant Raman scattering by a GaAs LO phonon to the excitonic ground state. In addition, a number of sharp resonances observed in single-dot PLE spectra can be identified as resonant Raman features due to localized phonons, which are observed in the conventional Raman spectrum. The results reveal the mechanism for the efficient relaxation of carriers observed in self-assembled quantum dots: the carriers can relax within the continuum states, and make transitions to the excitonic ground state by phonon emission.     

Optical emission and Raman scattering in modulation-doped gaAs-AlGaAs quantum wires and dots

Magneto-optical properties and resonant Raman spectroscopy of modulation doped GaAs-AlGaAs quantum well wires are reported. Their properties are compared with similar undoped quantum well wires to investigate the many electron effects in nanostructures. In undoped samples, the quantised energy levels observed by luminescence excitation spectroscopy are in good agreement with a particle-in-a-box model. In doped samples, the carrier confinement is explicitly revealed by magneto-luminescence and depolarised resonant Raman scattering. The calculated spectra in a Hartree model are in reasonable agreement with experiment.PACS: 78.66.Fd, 78.30.Fs, 78.55.Cr, 73.20.Dx     

New features in the anti‐Stokes and Stokes Raman spectra of single‐walled carbon nanotubes that are highly separated into their semiconducting and metallic nanotube components

Surface‐enhanced Raman scattering studies were performed using nonresonant (514.5 nm) and resonant (676.4 nm) optical excitations on single‐walled carbon nanotubes thoroughly separated into semiconducting (pure 99%) and metallic (pure 98%) components. Regardless of the support (Au or Ag), the metallic nanotubes do not present an anomalous anti‐Stokes Raman emission. Regardless of whether an on‐resonant or off‐resonant optical excitation is used, only the semiconducting nanotubes produce an abnormal anti‐Stokes Raman emission that grows when increasing the excitation light intensity or temperature. The Raman studies under light polarized relative to the main nanotube axis demonstrate that only semiconducting nanotubes are sensitive toward changes in the polarization of the excitation light. Copyright © 2014 John Wiley & Sons, Ltd.     

Resonance and composition effects on the Raman scattering from silver-gold alloy clusters

Low-frequency Raman scattering experiments have been performed on thin films consisting of pure gold or gold-silver alloy clusters embedded in alumina matrix. It is clearly shown that the quadrupolar vibrational modes are observed by Raman scattering because of the effect of resonance with the excitation of the electronic surface dipolar plasmon. This is due to the strong coupling between the collective electronic dipolar excitation and the quadrupolar vibrational modes. This effect of resonance does not exist with the core electron excitations. The mixing of the conduction electron dipolar excitation (surface plasmon) with the core electrons leads to the quenching of the resonant Raman scattering. Received 16 November 2000     

Excitation profiles of resonant coherent Raman scattering by impurity molecules

The amplitudes and the excitation profiles of coherent resonant Raman scattering (coherent anti‐Stokes and Stokes Raman scattering (CARS and CSRS)) by impurity centers in crystals and/or molecules in solutions are studied, taking into account the coherence of the excited mode and the inhomogeneity of the environment. The CARS and CSRS excitation profiles can directly be related to one‐photon absorption when using the transform theory known from spontaneous resonant Raman scattering. The enlargement of the amplitude of the active mode reveals itself in an enhancement of the vibrational overtones. At large amplitudes, a splitting in the profiles caused by the contribution of two turning points of a strong coherent vibration is observed. The inhomogeneous broadening is different in the excitation profiles of CARS and CSRS. The overlapping contributions to spectrally narrow and broad transitions lead to Fano peculiarities. The effects are illustrated by model calculations. Copyright © 2011 John Wiley & Sons, Ltd.     

Resonant Raman scattering from molecules adsorbed on non-metallic surfaces: An exact solution

A model of resonant Raman scattering of molecules weakly adsorbed on non-metallic surfaces is solved exactly. The model embodies the non-radiative electromagnetic interaction between molecule dipole transition and solid excitation, when the dominant screening effect is due to interband transitions or molecular excitons.The role of interband transitions in the resonant Raman response is also discussed by selected numerical examples in polaronic and non-polaronic regimes.     

钨酸锌晶体的受激拉曼散射和光致发光研究

采用皮秒532nm 激光激发，研究了ZnWO₄晶体的受激拉曼散射和本征荧光发射.在SRS光谱中观察到一级(558.7nm)和二级(588.6nm)斯托克斯光，线宽分别为130和77cm^－1, 一级斯托克斯光的抽运阈值为6.8mJ.在532nm激光抽运下ZnWO₄晶体的荧光光谱呈现出由能量为2.30，2.45和2.83eV的3个高斯分量组成的独特结构.光致发光表明晶体具有从400nm到650nm的宽带本征发光，其峰值波长为472.0nm，相应于钨氧之间的辐射跃迁. 关键词： 晶体 钨酸锌 受激拉曼散射 闪烁体     

Exciton-phonon interaction in mixed silver halides: Resonant Raman scattering vs photoluminescence

An investigation of resonant Raman scattering in mixed crystals of AgBr:Cl at 1.8 K shows that the zero-phonon and LO phonon-assisted exciton luminescence excited in the free indirect exciton absorption, exhibits an anomalous dependence on the exciton photon energy E_L. Close to the exciton gap, the bands show a Raman-like behaviour with their peaks at constant energetic distance from E_L. As E_L is tuned further into the absorption, the bands gradually develop into normal photoluminescence. The effect is explained by taking into account exciton relaxation via scattering by long-wavelength acoustic phonons, a process which is strongly energy dependent. In addition, resonant Raman scattering observed for excitation in the zero-phonon absorption suggests study for the first time of the mode behaviour of certain off-zone center phonons in this system.     

利用聚碳酸酯模板制备的金纳米棒的表面增强Raman散射效应研究

采用聚碳酸酯模板和电化学沉积法制备基于金纳米棒的Raman场增强衬底, 制备的金纳米棒直径大约36 nm, 长约1 μm, 测试结果显示其共振吸收峰的位置约为540 nm. 比较了谐振和非谐振条件下的场增强情况, 并确定了场增益系数, 结果显示谐振激光激发下的增益比非谐振情况下提高了7.36倍. 本研究相对于前人的工作取得了如下进展: 一是讨论了谐振模式与非谐振模式下的金纳米棒的场增益系数, 利用谐振波长的激光激发金纳米棒, 进一步提高了场增益; 二是消除了聚碳酸酯模板分子的荧光背底, 使其在表面增强 Raman 散射方面的应用进一步变得可行. 关键词： 金纳米棒 表面增强Raman散射 聚碳酸酯模板     

Low-Temperature Anti-Stokes Luminescence in Zn1-xMgxSe Mixed Crystals

Investigations of photoluminescence and Raman scattering in the ternary Zn_1-xMg_xSe compounds at 4.2 K were performed both in the Stokes and anti-Stokes regions using cw laser excitation with various wavelengths within the transparency band of the crystals. The anti-Stokes luminescence was observed for the first time in the ternary Zn_1-xMg_xSe compounds. We have found variations in the shape and position of the Stokes and anti-Stokes luminescence bands with an increase in the band gap energy, which depends on magnesium content. We assume that the anti-Stokes emission is generated by two-step excitation via deep-level centers. It is shown that the low-temperature anti-Stokes photoluminescence can probe the spatial distribution profiles of impurities in the bulk of crystals.     

High temperature experiments: a way to observe Raman scattering in luminescent samples

Two methods to decrease the luminescence of a sample and to observe the Raman scattering are described: the change of the wavelength of excitation or the change of the temperature of the sample. The evolution of the luminescence intensity with temperature is explained by the use of an energy model with a metastable state and radiationless processes whose activation energy can be calculated. This method is applied with success to a Roman silicate glass: the Raman scattering initially hidden by the luminescence is then observed. Copyright © 2007 John Wiley & Sons, Ltd.     

Transient behavior of secondary emission of ZnTe under band-to-band excitation

Time characteristics of secondary emissions have been measured in ZnTe at 82K under the excitation into the fundamental absorption band by subnanosecond light pulses. The decay time of polariton luminescence has been determined to be about 100 ps. On the other hand, the time behavior of the intensity of the sharp 2LO-phonon line has been found to coincide with that of the exciting pulse. This result is consistent with the resonance Raman scattering mechanism.