Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors

The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition.     

Stimulated emission processes in highly excited CdS at 80 K

The stimulated emission from CdS at 80 K under high excitation density is studied by means of quasi-resonant dye laser pumping. The evidence of exciton-exciton (P line) and exciton-electron (E line) scattering and, at the highest excitation level, of electron-hole plasma (EHP) recombination are reported and discussed also by means of optical gain measurements.     

Stimulated emission and E-H plasma in gallium selenide

The stimulated emission from extremely high quality GaSe crystals is investigated at very high values of excitation intensity by means of a nitrogen laser. The rising of the laser action due to electron-hole plasma recombination is reported. The unsaturated optical gain spectrum confirms the stimulated effect either from excitonic interaction processes or from electron-hole plasma. The role of the surface quality of the samples in the competition among these two amplification mechanisms is particularly discussed.     

Hot carrier cooling in gaas quantum wells

The cooling of a hot electron-hole plasma in undoped, p-doped, and n-doped GaAs/AlGaAs quantum wells of three different thicknesses (3, 9, and 20 nm) is investigated by picosecond luminescence spectroscopy. The energy loss of holes due to the Fröhlich interaction is at low excitation densities independent of well width and close to the value obtained by a simple theory. The rate strongly decreases with increasing excitation density. For electrons, the energy loss is even at low densities strongly reduced compared to the simple theory of the Fröhlich interaction. The reduction of the energy loss at high densities is independent of dimensionality and well width and not caused by screening or degeneracy effects. The energy loss due to acoustic deformation potential scattering depends on well width.     

Pico-second spectroscopy of highly excited CdSe and CdS—II high density electron-hole plasma

A new luminescence line characterized by a broad spectral width appears under intense pico-second pulse excitation at 4.2 K in both CdSe and CdS. With increasing excitation density the peak of the line shifts to lower energies and the spectral width becomes broader. Just opposite changes are observed with the lapse of time after excitation. It is concluded that the line is due to high density electron-hole plasma.     

Luminescence of high density electron-hole plasma in CdSe at elevated temperature

Luminescence of high density electron-hole plasma in CdSe is observed in the 77–300 K temperature range by picosecond pulse excitation. With increasing temperature from 77 K the stimulated emission band is replaced by the spontaneous emission band. Temperature changes of spectral features of these two bands and also their time dependence after pulse excitation are consistent with the theoretical consideration.     

Carrier transport effects and dynamics in multiple quantum well optical amplifiers

The gain recovery dynamics of multiple quantum well semiconductor optical amplifiers, following gain compression caused by ultrashort optical pulse excitation, have been studied for several devices of different structures. Fast, slow, and intermediate time constants are identified. The fast component (0.6 to 0.9 ps) corresponds to cooling of the dense, inverted electron-hole plasma. The slow component (150 to 300 ps) corresponds to replenishment of carriers from the external bias supply, with the dynamics dominated by spontaneous recombination (primarily Auger) of the electron-hole plasma. The intermediate time constant (2 to 14 ps) is caused by carrier capture by the quantum wells and is structure-dependent. For most of the devices, the capture process is dominated by diffusion-limited transport in the cladding/barrier region. The variation of carrier density and temperature also affects the refractive index profile of the devices and, hence, affects the waveguiding properties. Dynamical variation of the mode confinement factor is observed on the fast and slow timescales defined above.     

Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional Si1 − x Ge x /Si structures

The dynamics of the phase transition from an electron-hole plasma to an exciton gas is studied during pulsed excitation of heterostructures with Si_{1 ? x} Ge _x /Si quantum wells. The scenario of the phase transition is shown to depend radically on the germanium content in the Si_{1 ? x} Ge _x layer. The electron-hole system decomposes into a rarefied exciton and a dense plasma phases for quantum wells with a germanium content x = 3.5% in the time range 100–500 ns after an excitation pulse. In this case, the electron-hole plasma existing in quantum wells has all signs of an electron-hole liquid. A qualitatively different picture of the phase transition is observed for quantum wells with x = 9.5%, where no separation into phases with different electronic spectra is detected. The carrier recombination in the electron-hole plasma leads a gradual weakening of screening and the appearance of exciton states. For a germanium content of 5–7%, the scenario of the phase transition is complex: 20–250 ns after an excitation pulse, the properties of the electron-hole system are described in terms of a homogeneous electron-hole plasma, whereas its separation into an electron-hole liquid and an exciton gas is detected after 350 ns. It is shown that, for the electron-hole liquid to exist in quantum wells with x = 5–7% Ge, the exciton gas should have a substantially higher density than in quantum wells with x = 3.5% Ge. This finding agrees with a decrease in the depth of the local minimum of the electron-hole plasma energy with increasing germanium concentration in the SiGe layer. An increase in the density of the exciton gas coexisting with the electron-hole liquid is shown to enhance the role of multiparticle states, which are likely to be represented by trions T ⁺ and biexcitons, in the exciton gas.     

Multi-photon-pumped stimulated emission from ZnO nanowires: A time-resolved study

In this work, we study temporal evolution of multi-photon-pumped stimulated emission from ZnO nanowires. In addition to second harmonic generation, ultraviolet stimulated emission is observed in ZnO nanowires under femtosecond pulse excitation at 800 nm. Sharp emission peaks appear when excitation flux reaches a threshold of 80 mJ/cm², which can be interpreted as lasing action in self-formed nanowire microcavities. Temporal evolution of the emission captured by Kerr shutter technique shows strong excitation-power dependence. The dynamic trace of stimulated emission exhibits a fast decay with a lifetime about 4.5 ps at intermediate excitation (∼100 mJ/cm²) and a lifetime about 2 ps at high excitation (>160 mJ/cm²). The difference in the lifetime can be attributed to different gain mechanisms related to excitonic interaction and electron-hole plasma, respectively.     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

Luminescence and gain spectroscopy of disordered CdS1−x Se x under high excitation

The absorption-, reflection-, and luminescence spectra of CdS_1–x Se _x are measured under low excitation. The luminescence under high excitation is also observed. For the first time, the gain spectra of disordered crystals are investigated with the excite- and probebeam technique to get a better understanding of the high density electron-hole pair system in this type of materials. We compare the results with those obtained in pure CdS and CdSe.     

Spontaneous luminescence due to high density electron-hole plasma in GaAs under nano- and pico-second pulse excitation

Spontaneous luminescence due to high density electron-hole plasma in GaAs is observed at 4.2 K under nano- and pico-second pulse excitation. From the pico-second time-resolved spectra, it is found that the hot carriers are cooled down rapidly within 150 psec, and the changes of spectra are not appreciable in the later stage. One may consider, together with results of the spectral shape analysis, that the electron-hole liquid formation is improbable at least within the time range observed.     

Time-resolved spectra of spontaneous luminescence from high density electron-hole plasma in CdS

Pico-second time-resolved spectra of the spontaneous luminescence from high density electron-hole plasma in CdS are measured at 4.2 K suppressing the stimulation effect. It is found that after the pulse excitation hot carriers are cooled rapidly for the first 100 psec, and that therafter up to the 400 psec delay time the shape of spectra hardly changes but the spectral width depends on excitation density. Although it seems as if some kind of state like electron-hole liquid is formed, one cannot easily regard that state as the condensed electron-hole drop state.     

Experimental investigation of the electron-hole plasma expansion in CdS

Using a two beam method for gain and reflection spectroscopy, we introduce a new technique allowing for a spatial and temporal resolution of 5 μm and 2 nsec, respectively. With this method we are able to investigate the optical gain, the reflection and the spatial extension of an electron-hole plasma under stationary excitation conditions. The experiments are performed with the II–VI compound semiconductor CdS. Our results are compared with those from other authors who deduced the electron-hole plasma properties mainly from luminescence experiments.     

Pico-second spectroscopy of highly excited CdSe and CdSI high density exciton system

Time-resolved luminescence spectra are measured at 4.2 K most in detail for CdSe under 531 nm pico-second pulse excitation. The M, P, and A-LO lines from high density excitons rise in intensity after pulse excitation, reach maxima, and then fall, the rise time being in a range of 100–600 psec and becoming faster with increasing excitation density. This time dependence is due to the light amplification effect by stimulated emission.     

Optical properties of highly excited direct gap semiconductors

The electronic excitations in direct gap semiconductors interact strongly with the photon field. We discuss both the experimental and the theoretical aspects of the optical properties of these materials under strong optical excitation. We distinguish between intermediate excitation levels at which the electronic excitations form a dense system of excitons and excitonic molecules and very high excitation levels at which a degenerate electron-hole plasma occurs. The optical spectra of dense excitonic systems, which are mainly observed in copper halides and II–VI compounds, are shown to be determined mainly by the interaction processes between excitonic molecules, polaritons and free carriers. The optical properties of the electron-hole plasma, which has been observed in II–VI and especially in III–V compounds, can be understood only by taking into account many-body effects, such as dynamical screening of the Coulomb interactions, plasmon-assisted transitions and excitonic enhancement.     

Photoluminescence due to exciton–exciton scattering in a GaAs/AlAs multiple quantum well

We have investigated photoluminescence (PL) properties of a GaAs (20 nm)/AlAs (20 nm) multiple quantum well at 10 K under intense excitation conditions. It has been found that a PL band due to exciton–exciton scattering, the so-called P emission, is observed in addition to the biexciton PL under an excitation energy higher than the fundamental heavy-hole exciton by the energy of the longitudinal optical phonon. On the other hand, the P band could never be observed at an excitation energy much higher than the exciton energy, where a band-filling phenomenon appears in the PL spectrum. Furthermore, we confirmed the existence of optical gain leading to stimulated emission in the energy region of the P band using a variable-stripe-length method.     

Picosecond studies of highly excited CdS

Results on picosecond luminescence and excite-and-probe transmission as well as transient grating measurements for highly excited CdS measured at a bath temperature of 5 K will be presented. The luminescence and optical gain both due to electron-hole plasma and excitonic molecule recombination are observed. The electron-hole plasma decays very fast by bimolecular recombination of electrons and holes in the plasma and diffusion of the carrier toward the low density regions, and transforms into excitons and excitonic molecules within 100–200 ps. The possibility of electron-hole liquid formation is definitely excluded. The exciton and excitonic molecule decay rather slowly and govern the optical properties for times longer than 200 ps.     

Photoluminescence properties of exciton–exciton scattering in a GaAs/AlAs multiple quantum well

We report on the photoluminescence (PL) properties of a GaAs (20 nm)/AlAs (20 nm) multiple quantum well under high-density-excitation conditions at excitation energies near the fundamental exciton energies. The biexciton-PL band is dominant in a relatively low-excitation-power region. The PL originating from exciton–exciton scattering, the so-called P emission, suddenly appears with an increase in excitation power. The excitation-energy dependence of the intensity of the P-PL band indicates that the excitation energy higher than the fundamental heavy-hole exciton by the energy of the longitudinal optical (LO) phonon is the most efficient for the P PL. This suggests that the LO-phonon scattering plays an important role in the relaxation process of excitons leading to the P PL. The appearance of the P-PL band remarkably suppresses the intensity of the biexciton-PL band; namely, the exciton–exciton scattering process prevents the formation of biexcitons. Furthermore, we have confirmed the existence of optical gain due to the exciton–exciton scattering process with use of a variable-stripe-length method.     

Formation of the electron-hole droplet cloud in germanium

We describe luminescence imaging experiments that probe the nature of the phonon wind which transports electron-hole droplets in Ge. The participation of non-equilibrium phonons emanating near the excitation region is supported by: (a) sharp features in the droplet spatial distribution (b) a dependence of the average cloud density on the excitation photon energy, and (c) a rapid initial buildup of the cloud.