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1.
The transfer matrix approach is applied to calculate the spectral density of electronic states for the W(001) surface. We use a tight-binding hamiltonian with a nine function basis: 6s, 6p and 5d. Results for k points along the Σ and ? symmetry lines are presented for occupied states. Both surface and bulk features of the spectral density are in good agreement with angularly resolved photoemission spectra.  相似文献   

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We present a calculation of the spectral density of states for crystals of TiO and VO with (001) cleaved surfaces. The transfer matrix formalism is employed, with a hamiltonian including the O 2p and the metal 3d orbitals. Slater-Koster parameters obtained by Mattheiss (1972) from a bulk calculation are used. The results are obtained at three special points in the 2D Brillouin zone for three different (001) planes: surface plane, plane immediately below it and bulk plane. In the neighborhood of the point M there is an intrinsic surface state and a surface resonance due to the hybridization between ligand and metal orbitals. The surface state has mixed eg and pz symmetry along the Σ symmetry line and lies above the Fermi level. No surface relaxation or reconstruction is considered.  相似文献   

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For near-normal photoemission from ferromagnetic Fe(001) excited by linearly polarized synchrotron radiation, energy-resolved spin polarization and intensity distribution have been measured at 60 eV photon energy. Calculations using a one-step theory of photoemission consistently reproduce. the present spin-resolved data as well as earlier spin-averaged measurements. The quasi-particle exchange splitting deduced from the data is 2 eV. The agreement with band structure calculations is suggested to be coincidental due to a compensation of real and imaginary self-energy corrections.  相似文献   

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To interpret recent spin-, energy- and angle-resolved experimental photoemission spectra at photon energies ranging from 20 to 70 eV, one-step calculations on the basis of a non-relativistic Green function formalism have been performed together with a calculation of the corresponding bulk band structure and momentum-resolved layer-by-layer quasi-particle density of states. The theoretical spectra are in good agreement with the data. Individual features are explained in terms of bulk interband transitions and emission from a majority-spin surface resonance. Self-energy corrections are found to be important and in qualitative disagreement with recent microscopic theory.  相似文献   

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Fully relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. We find that spin-flip scattering at the interface is controlled not only by the strength of the spin-orbit coupling, but depends strongly on the intrinsic width of the resonant surface states.  相似文献   

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The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (E{F}). We use scanning tunneling microscopy and density functional theory to clarify the fundamental nature of the ground state Ge(001) electronic structure near E{F}, and resolve previously contradictory photoemission and tunneling spectroscopy data. The highest energy occupied surface states were found to be exclusively back bond states, in contrast to the Si(001) surface, where dangling bond states also lie at the top of the valence band.  相似文献   

8.
The variations of electronic and magnetic properties of ultrathin Fe overlayers on a W(001) surface as a function of Fe film thickness (1.0–4.0 ML) has been investigated using X-ray magnetic circular dichroism (XMCD) in conjunction with ultraviolet photoelectron spectroscopy (UPS) and low energy electron diffraction (LEED). We found that the ferromagnetic property of Fe film started to build up over 2.0 ML, as we confirmed the spin and angular moment contribution to the magnetic moment using XMCD experiments. We also confirmed that a thermally stable layer is over 2.0 ML of Fe film as we change the annealing temperature taken after Fe deposition at 300 K and at 400 K using UPS. We will systematically demonstrate that the occurrence of ferromagnetic property of Fe film on a W(001) surface is closely correlated to a thermally stable layer of Fe film on a W(001) surface.  相似文献   

9.
The chemisorption of one monolayer of Fe atoms on a Au-passivated Si(001) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The Fe adatom chemisorption on an ideal Si(001) surface is also considered for comparison. The chemisorption energy and layer projected density of states for a monolayer of Fe atoms on Au-passivated Si(001) surface are calculated and compared with that of the Fe atoms on an ideal Si(001) surface. The charge transfer is investigated. It is found that the most stable position is at the fourfold hollow site for the adsorbed Fe atoms, which might sit below the Au surface. Therefore there will be a Au-Fe mixed layer at the Fe/Au-Si(100) interface. It is found that the adsorbed Fe atoms cannot sit below the Si surface, indicating that a buffer layer of Au atoms may hinder the intermixing of Fe atoms and Si atoms at the Fe/Au-Si(001) interface effectively, which is in agreement with the experimental results.  相似文献   

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M. Tomášek  Š. Pick 《Surface science》1980,100(2):L454-L456
Simple qualitative reasoning is used to discuss the origin and the nature of surface states on the (001) face of LaB6, found recently by Aono et al.  相似文献   

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A metastable Fe(A) terminated Fe3O4(001) surface was prepared by tailoring the surface preparation conditions. STM, LEIS and LEED are utilized to demonstrate that annealing the Ar+ sputtered surface to 350 °C produces an Fe(A) terminated surface with a (√2 × √2)R45° superstructure. Within the superstructure both single Fe atoms and Fe dimer species are observed. The surface is reoxidized upon annealing to higher temperatures, eventually leading to the recovery of the energetically favorable Jahn–Teller distorted surface at 700 °C. The ability to reproducibly prepare the Fe(A) termination in this simple manner will allow investigations into the structure–function relationship for this important technological material.  相似文献   

15.
We present first-principles calculations of the nonlinear optical (NLO) response of a Ni/Cu(001) bilayer. The calculations are based on the full potential linearized augmented plane wave (FLAPW) method with the additional implementation of spin–orbit coupling (SOC). On the basis of this set of eigenstates the magneto-optical transition-matrix elements are evaluated. Using the surface-sheet model the optical reflection properties are determined for the cases of the magnetization vector perpendicular to the surface (polar magneto-optical configuration (MOC)) and for the in-plane magnetization (longitudinal MOC). The nonlinear optical susceptibility tensor elements χ(2) ijk for different magnetization directions as well as the spectral dependence of χ(2) ijk, the resulting intensities, and Kerr angles are presented for the Ni/Cu(001) bilayer. The results show that the magnetic tensor elements of the χ(2) ijk tensor are smaller than the nonmagnetic ones by only one order of magnitude, confirming the important role of magnetic properties in the NLO response. Received: 16 October 2001 / Revised version: 8 March 2002 / Published online: 29 May 2002  相似文献   

16.
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.  相似文献   

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