Vapor-liquid-solid and vapor-solid growth of phase-change Sb2Te3 nanowires and Sb2Te3/GeTe nanowire heterostructures

We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and Ge are localized in the Sb2Te3 and GeTe portions, respectively, confirming the alloy-free composition in the core/shell heterostructures. Transmission electron microscopy and diffraction studies show that Sb2Te3 and GeTe regions exhibit rhombohedral crystal structure. Both Sb2Te3 and GeTe grow along the [110] direction with an epitaxial interface between them. Electrical characterization of individual nanowires and nanowire heterostructures demonstrates that these nanostructures exhibit memory-switching behavior.     

Study on the preparation of a137Cs/137mBa radionuclide generator

^137mBa has been applied successfully to dynamic studies for diagnosis in nuclear medicine for a long time. A variety of inorganic exchangers have been employed for the separation of^137mBa from its parent¹³⁷Cs. In the present study, cupric cobaltic ferrocyanide and amorphous zirconyl phosphate were synthesized and compared for use in a¹³⁷Cs/^137mBa generator. The results show that the former can adsorb¹³⁷Cs more efficiently and provide high elution yield of^137mBa with greater than 99.99% radionuclide purity. A new generator involving multimillicuries of^137mBa, in connection with a computerized detection system, has been constructed.     

Large-area Sb2Te3 nanowire arrays

High-density large-area nanowire arrays of thermoelectric material Sb(2)Te(3) have been successfully prepared using electrochemical deposition into the channels of the porous anodic alumina membrane. The morphologies, structure, and composition of the as-prepared Sb(2)Te(3) nanowires have been characterized using field-emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. Individual Sb(2)Te(3) nanowires are single crystalline and continuous with uniform diameters ( approximately 50 nm) throughout the entire length. The atomic ratio of Sb to Te is very close to the 2:3 stoichiometry.     

Design in solid state chemistry based on phase homologies. Sb4Te3 and Sb8Te9 as new members of the series (Sb2Te3)m.(Sb2)n

Sb4Te3 and Sb8Te9 are members of the homology (Sb2Te3)m.(Sb2)n, with structures consisting of Sb2- and Sb2Te3-type slabs stacked along [001]; electrical conductivity and thermopower are reported for several members of this family.     

The anion exchange behavior of Te and Sb

The absorption behavior of Te and Sb in different oxidation states by anion exchange resins in hydrochloric acid medium has been studied. Distribution coefficients for Te(IV), Te(VI) as a function of HCl acid concentration (upto 3M HCl) have been determined. The absorbability for Sb(III) was noticed to be very high and could not be eluted out of the column using HCl as eluent. Sb(V) could be eluted quantitatively using 3M HCl. The present study clearly indicate that due to the EC/β⁺ decay of the parent isotopes^117,118Te, the daughter nuclei^117,118Sb are produced predominantly as Sb(III).     

Pressure-induced disordered substitution alloy in Sb2Te3

A new type of disordered substitution alloy of Sb and Te at above 15.1 GPa was discovered by performing in situ high-pressure angle-dispersive X-ray diffraction experiments on antimony telluride (Sb(2)Te(3)), a topological insulator and thermoelectric material, at room temperature. In this disordered substitution alloy, Sb(2)Te(3) crystallizes into a monoclinic structure with the space group C2/m, which is different from the corresponding high-pressure phase of the similar isostructural compound Bi(2)Te(3). Above 19.8 GPa, Sb(2)Te(3) adopts a body-centered-cubic structure with the disordered atomic array in the crystal lattice. The in situ high-pressure experiments down to about 13 K show that Sb(2)Te(3) undergoes the same phase-transition sequence with increasing pressure at low temperature, with almost the same phase-transition pressures.     

Sb_2Te_3纳米片的水热合成与表征

在水热条件下,以乙醇胺为还原剂,实现了亚碲酸根(TeO~(2-)_3)的分步还原,并以新生成的单质Te纳米棒为碲源,原位一步法合成出六方相Sb_2Te_3纳米片.采用X射线粉末衍射仪(XRD)、场发射扫描电子显微镜(FESEM)和透射电子显微镜(TEM)等对产物的物相、形貌及组成进行了表征.结果表明,产物Sb_2Te_3为六方纳米片,厚度约为100~200 nm,直径约为0.6~1.5μm,形貌均一,分散性良好.适宜的合成条件是水/乙醇胺体积比为8∶12,180℃下反应24 h.依据部分实验结果以及单质Te和六方相Sb_2Te_3晶体结构的比较,证明了Sb_2Te_3主要以外延方式在单质Te纳米棒表面生长,且两者的晶面取向为(003)Te//(003)Sb_2Te_3,[110]Te//[110]Sb_2Te_3.     

Multielemental speciation of As, Se, Sb and Te by HPLC-ICP-MS

An anion exchange HPLC-ICP-MS procedure allowing the simultaneous multielemental speciation analysis of arsenic, selenium, antimony and tellurium has been developed. Four arsenic species (As^III, As^V, monomethylarsonic acid and dimethylarsinic acid), two selenium species (Se^IV and Se^VI) may be determined in a single run as well as one antimony (Sb^V) and one tellurium species (Te^VI). Alternatively Sb and/or Te may be used as internal standards for As and Se speciation studies. Optimisation of ICP-MS conditions led to satisfactory relative (0.01 (Sb^V) to 1.8 (Se^VI) ng ml⁻¹) and absolute detection limits (1–180 pg). Reproducibility ranged from 3.1 to 5.6% and the linearity was verified in the 0–200 ng ml⁻¹ range.     

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.     

Temperature dependence of the thermophysical properties of Bi1.5Sb0.5Te3

The thermophysical properties (thermal diffusivitya, specific heatC _p and thermal conductivity λ), of Bi_1.5Sb_0.5Te₃ were measured in the temperature range 300–700 K. The results showed that the contribution of the charge carriers to the thermal conduction is negligibly small in comparison with the contribution of phonons at high temperatures. On the other hand, the heat conduction due to the simultaneous thermal diffusion of electrons and holes is important as well as the lattice thermal conduction. The explanation of the results was supported by using electrical conductivity measurements and X-ray diffraction.     

Electron-rich rods as building blocks for Sb strips and Te sheets.

We analyze the bonding in a number of networks of heavy main group elements comprised of finite-length linear chains fused at right angles. Isolated linear chain building blocks may be understood easily by analogy with three-orbital four-electron "hypervalent" bonding picture in such molecules as I(3)(-) and XeF(2). After deriving the appropriate electron-counting rules for such linear units, we proceed in an aufbau to fuse these chains into simple (and not so simple) infinite networks. It is proposed that (a) infinite Sb(3) ribbons of vertex sharing squares are stable for an electron count of 20 electrons per three atoms (i.e., ); (b) sidewise fused Sb double ribbons are stable for an electron count of 38 electrons per six atoms (i.e., ); (c) Sb(4) strips cut from a square lattice are stable at the electron count of 24 electrons per four atoms (i.e., ); (d) Te(6) defect square sheets are stable at the electron count of 40 electrons per six atoms (i.e., ). The electronic structures of the solid-state compounds containing these networks, namely La(12)Mn(2)Sb(30), alpha-ZrSb(2), beta-ZrSb(2), Cs(3)Te(22), and Cs(4)Te(28), are elaborated. We propose preferred electron counts for two hypothetical Sb ribbons derived from the Sb(3) ribbon in La(12)Mn(2)Sb(30). A possibility of geometry distortion modulation by excess charge in lattices comprised of even-membered linear units is suggested.     

Differences in partial thermodynamic functions of some sections of systems Tl−Ag−Te and Tl−Sb−Te

The EMF concentration cell method was applied to determine excess partial molar thermodynamic functions for some sections of the systems Tl?Ag?Te and Tl?Sb?Te. The presence of binary and ternary associates is assumed in Tl?Ag?Te solutions.     

低温湿化学法可控制备一维Te纳米线/棒

采用低温湿化学法制备了形貌可调的Te纳米线/棒. 考察了反应温度和还原剂滴加速率对产物的物相和微观结构的影响规律. 研究结果表明, 随着反应温度的升高, Te纳米线的长度逐渐变小, 直径逐渐增大; 随着还原剂滴加速率减慢, 产物Te纳米线长度增加, 直径增大. 通过考察不同反应阶段产物的形貌和结构, 可推测Te纳米线/棒的生长模式为: 反应初期, 溶解在乙二醇内的TeO₂被还原为亚稳态的活性α-Te和稳态的τ-Te, 随着反应的进行, 亚稳态的活性α-Te将重新溶解, 并被还原为稳态的τ-Te析出. τ-Te沿[001]方向轴向生长的特性应归因于其晶体的各向异性.