Charge density wave transport in NbSe<Subscript>3</Subscript> at low temperatures under high magnetic field

Charge density wave (CDW) depinning and sliding regimes have been studied in NbSe₃ at low temperatures down to 1.5 K under magnetic field of 19 T oriented along the c-axis. We found that the threshold field for CDW depinning becomes temperature independent below T ₀ ≈ 15 K. Also CDW current to frequency ratio characterizing CDW sliding regime increases by factor 1.7 below this temperature. The results are discussed as a crossover from thermal fluctuation to tunneling CDW depinning at T < T ₀. Besides, we found that CDW sliding strongly suppresses the amplitude of Shubnikov-de Haas oscillations of magnetoresistance.     

Magnetoresistance of a Two-Dimensional TbTe<Subscript>3</Subscript> Conductor in the Sliding Charge-Density Wave Regime

The magnetoresistance of a TbTe₃ two-dimensional conductor with a charge-density wave (CDW) has been measured in a wide temperature range and in magnetic fields of up to 17 T. At temperatures well below the Peierls transition temperature and in high magnetic fields, the magnetoresistance exhibits a linear dependence on the magnetic field caused by the scattering of normal charge carriers by “hot” spots of the Fermi surface. In the sliding CDW regime in low magnetic fields, a qualitative change in the magnetoresistance has been observed associated with the strong scattering of carriers by the sliding CDW.     

Hydrostatic-Pressure-Induced Reentrance of the Metallic State in the κ-(ET)2Hg(SCN)2Cl Quasi-Two-Dimensional Organic Conductor

On cooling below 30 K, the κ-(ET)₂Hg(SCN)₂Cl quasi-two-dimensional organic metal, which is in the quantum spin liquid state at liquid helium temperatures, undergoes a transition to the Mott insulator state. The application of a hydrostatic pressure p = 0.7 kbar stabilizes the metallic state and makes it possible to study the behavior of the interlayer magnetoresistance at liquid helium temperatures. The field dependence of the magnetoresistance exhibits an unlimited power-law growth, which indicates that the polaron mechanism contributes to the interlayer transport. The spectrum of observed magnetoresistance oscillations corresponds to the Fermi surfaces characteristic of conducting layers with the κ-type structure.

     

Angular studies of the magnetoresistance in the density wave state of the quasi-two-dimensional purple bronze KMo<Subscript>6</Subscript>O<Subscript>17</Subscript>

The purple molybdenum bronze KMo₆O₁₇ is a quasi-two-dimensional compound which shows a Peierls transition towards a commensurate metallic charge density wave (CDW) state. High magnetic field measurements have revealed several transitions at low temperature and have provided an unusual phase diagram “temperature-magnetic field”. Angular studies of the interlayer magnetoresistance are now reported. The results suggest that the orbital coupling of the magnetic field to the CDW is the most likely mechanism for the field induced transitions. The angular dependence of the magnetoresistance is discussed on the basis of a warped quasi-cylindrical Fermi surface and provides information on the geometry of the Fermi surface in the low temperature density wave state.     

Localization effects in the charge density wave state [4]of the quasi-two-dimensional monophosphate tungsten bronzes {(P{O_2})_4}{(W{O_3})_{2m}}(m = 7,8,9)

The monophosphate tungsten bronzes (PO ₂ ) ₄ (WO ₃ ) _2m are quasi-two-dimensional conductors which show charge density wave type electronic instabilities. We report electrical resistivity and magnetoresistance measurements down to 0.30 K and in magnetic fields up to 16 T for the m = 7, 8 and 9 members of this family. We show that these compounds exhibit at low temperature an upturn of resistivity and field dependences of the magnetoresistance characteristic of localization effects. We discuss the dimensionality of the regime of localization as m is varied. We show that for m =7, the regime is quasi-two-dimensional and three-dimensional for m = 8, 9. Received 16 September 1999     

Fermi surface in the new organic quasi-two-dimensional metal α-(BETS)2TlHg(SeCN)4

Quantum oscillations of de Haas-van Alphen and Shubnikov-de Haas and semiclassical angular oscillations of the magnetoresistance have been observed in the quasi-two-dimensional organic metal α-(BETS)₂TlHg(SeCN)₄. The quantum oscillations are connected with the cylindrical part of the Fermi surface. The angular oscillations are associated with the carrier motion on both the cylindrical part and quasi-planar sheets of the Fermi surface. The values of the Dingle temperature, T _D ≈ 2–3 K, and the effective mass, m* ≈ 1.03m ₀, have been defined. The possibility of the weakening of multibody interactions has been shown in this compound.     

Observation of a node in the quantum oscillations induced by microwave radiation

The microwave induced magnetoresistance in a GaAs/AlGaAs heterostructure was studied at temperatures below 1 K and frequencies in the range of 150-400 GHz. A distinct node in the Shubnikov-de Haas oscillations, induced by the microwave radiation, is clearly observed. The node position coincides with the position of the cyclotron resonance on the carriers with effective mass (0.068±0.005)m₀.     

Hopping conductivity and activated transport in InxGa1-xAs quantum wells

We present measurements of the diagonal R_xx and off-diagonal R_xy magnetoresistance under quantum Hall conditions on several high electron mobility transistors (HEMT) based on In_xGa_1-xAs quantum wells. From the magnetoresistance tensor we obtain the longitudinal conductivity σ _xx . We study the transport mechanisms near the σ _xx minima at temperatures ranging between 2 K and 35 K; activated transport is the dominant mechanism for temperatures above 7 K while variable range hopping conductivity is significant for lower temperatures. We show that electron-electron correlations should be taken into account to explain the conductivity vs temperature behaviour below 5 K. Finally, we study the behaviour of the localization length as a function of Landau level filling and obtain a critical exponent γ = 3.45±0.15. Received 6 June 2001 and Received in final form 16 October 2001     

Charge-density-wave partial gap opening in quasi-2D KMo6O17 purple bronze studied by angle resolved photoemission spectroscopy

Low dimensional (LD) metallic oxides have been a subject of continuous interest in the last two decades, mainly due to the electronic instabilities that they present at low temperatures. In particular, charge density waves (CDW) instabilities associated with a strong electron-phonon interaction have been found in Molybdenum metallic oxides such as KMo₆O₁₇ purple bronze. We report an angle resolved photoemission (ARPES) study from room temperature (RT) to T ∼40 K well below the Peierls transition temperature for this material, with CDW transition temperature T_CDW ∼120 K. We have focused on photoemission spectra along ΓM high symmetry direction as well as photoemission measurements were taken as a function of temperature at one representative k_F point in the Brillouin zone in order to look for the characteristic gap opening after the phase transition. We found out a pseudogap opening and a decrease in the density of states near the Fermi energy, E_F, consistent with the partial removal of the nested portions of the Fermi surface (FS) at temperature below the CDW transition. In order to elucidate possible Fermi liquid (FL) or non-Fermi liquid (NFL) behaviour we have compared the ARPES data with that one reported on quasi-1D K_0.3MoO₃ blue bronze.     

Superconductor order parameter symmetry in UPd Al

The heavy fermion compound UPd₂Al₃ has attracted much interest on account of the coexistence of antiferromagnetism and superconductivity at temperatures below 2 K. The antiferromagnetic fluctuations provide, principally via inelastic neutron scattering, a window on the low frequency dynamics in this material. By an analysis of neutron scattering data, and taking into consideration results from other experimental probes, it is suggested which sheet(s) of the f-electron Fermi surface may play an active role in forming the superconducting state in UPd₂Al₃. The proposed scheme sheds new light on previously reported anomalies in this material. Received 16 July 1999     

Interaction of both charge density waves in NbSe3 from interlayer tunneling experiments

An interlayer tunneling technique has been used for spectroscopy of charge density wave (CDW) energy gaps (Δ_1,2) in NbSe₃ subsequently opened at the Fermi surface on decreasing temperature at T _p1 = 145 K (CDW1) and at T _p2 = 60 K (CDW2). We found that the CDW2 formation is accompanied by an increase of the CDW1 gap below T _p2. The maximum enhancement of Δ₁, δΔ₁ is about 10%. The effect observed has been predicted theoretically as resulting from the joint phase locking of both CDWs with the underlying crystalline lattice below T _p2. The text was submitted by the authors in English.     

Quantum oscillations and the Sermi surface of LuB12

To examine the Fermi surface of LuB₁₂, measurements of the de Haas-van Alphen (dHvA) effect were made at temperatures between 0.35 and 2 K in magnetic fields up to 12 Tesla. Oscillations in the susceptibility occurred above 5 Tesla in any field direction relative to the single crystal sample. From the Fourier transform of the data obtained, we conclude the Fermi surface of both conduction bands to have multiple extremal cross sections. For some of these orbits, the temperature dependence of the dHvA signal was investigated to determine the corresponding cyclotron mass. For a better understanding, a Full Potential Linearized Augmented Plane Wave-(FLAPW-) band structure calculation was carried out and the shapes of the Fermi surfaces were determined. In addition, we investigated the transverse magnetoresistance as a function of the field and the field direction. Its anisotropy, as well as the Shubnikov-de Haas (SdH) oscillations occurring in certain geometries, are in agreement with the results of the dHvA measurements.     

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

Abstract

The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on anSiO₂/Si substrate have been investigated using the Shubnikov–de Haas (SdH) oscillations technique. The magnetoresistance measurements were performed in the temperature range between 1.8 and 43 K and at magnetic fields up to 11 T. The 2D carrier density and the Fermi energy have been determined from the period of the SdH oscillations. In addition, the in-plane effective mass as well as the quantum lifetime of 2D carriers have been calculated from the temperature and magnetic field dependences of the SdH oscillation amplitude. The sheet carrier density (1.42 × 10¹³ cm^?2 at 1.8 K), obtained from the low-field Hall Effect measurements, is larger than that of 2D carrier density (8.13 × 10¹² cm^?2). On the other hand, the magnetoresistance includes strong magnetic field dependent positive, non-oscillatory background magnetoresistance. The strong magnetic field dependence of the magnetoresistance and the differences between sheet carrier and 2D carrier density can be attributed to the 3D carriers between the graphene sheet and the SiO₂/Si substrate.     

On the 240 K anomaly in the magnetic properties of LiNiO2

In this work, results of X-band ESR spectroscopy, ac-magnetic susceptibility and X-ray powder diffraction measurements on Li_1-xNi _1+x O₂ (x = 0.02 and x = 0.07) are presented and discussed. While the susceptibility of the compound with x = 0.02 is shown to follow a Curie-Weiss law, with a Weiss temperature of the order of 30 K, the compound with x = 0.07 is found to order ferromagnetically below K. However, an additional anomaly is observed in the magnetic properties of this latter compound at around 240 K. We attribute this anomaly to the presence of macroscopic Ni-rich regions which order ferrimagnetically below this temperature. This phenomenon is different from the bulk ferromagnetism that occurs at much lower temperatures, and allows us to discard earlier suggestions proposed in the literature in which the 240 K anomaly has been considered as denoting an intrinsic phenomenon. Received 14 May 1999 and Received in final form 5 August 1999     

De Haas-van Alphen effect in the organic superconductor κ-(BEDT-TTF)2I3

In the two-dimensional organic superconductor -(BEDT-TTF)₂I₃ de Haas-van Alphen oscillations were observed at magnetic fields above 5 T and temperatures between 0.4 and 2 K. We found two dHvA frequencies at 3.846 kT and 0.570 kT, which correspond to the cross-sectional areas of the Fermi surface expected from a tight-binding calculation. From the temperature dependence of the oscillation amplitudes the effective mass belonging to the larger orbit was found to be 3.80m_o. Precise measurements of the angular dependence of the dHvA frequency show no deviation from that expected for a cylindrical Fermi surface. The angular dependence of the amplitude including spin splitting zeroes can essentially be described by a two-dimensional Fermi surface. Certain systematical deviations, however, hint for a slight corrugation.     

De Haas-van Alphen oscillations in the quasi-two-dimensional organic metal (BEDO-TTF)5[CsHg(SCN)4]2

The magnetization oscillations in the quasi-two-dimensional organic metal (BEDO-TTF)₅[CsHg(SCN)₄]₂ are thoroughly investigated over a wide range of magnetic field directions at different temperatures down to 0.4 K. The results obtained are in good agreement with the shape and sizes of the Fermi surface calculated from the x-ray diffraction data. Apart from the fundamental frequencies, the combination frequencies are found in the magnetization oscillation spectrum. It is demonstrated that these combination frequencies are governed by the motion of charge carriers along the real closed orbits inside the network of magnetic breakdown orbits formed under the action of the magnetic field. It is uniquely established that the combination frequencies previously revealed in the magnetoresistance oscillation spectrum of the same metal are associated with the quantum interference effect. The angular dependences of the oscillation amplitude exhibit minima, which are explained by the spin splitting of the Landau levels.     

Surface states of charge carriers in epitaxial films of the topological insulator Bi2Te3

The galvanomagnetic properties of p-type bismuth telluride heteroepitaxial films grown by the hot wall epitaxy method on oriented muscovite mica substrates have been investigated. Quantum oscillations of the magnetoresistance associated with surface electronic states in three-dimensional topological insulators have been studied in strong magnetic fields ranging from 6 to 14 T at low temperatures. The cyclotron effective mass, charge carrier mobility, and parameters of the Fermi surface have been determined based on the results of analyzing the magnetoresistance oscillations. The dependences of the cross-sectional area of the Fermi surface S(k _F), the wave vector k _F, and the surface concentration of charge carriers n _s on the frequency of magnetoresistance oscillations in p-type Bi₂Te₃ heteroepitaxial films have been obtained. The experimentally observed shift of the Landau level index is consistent with the value of the Berry phase, which is characteristic of topological surface states of Dirac fermions in the films. The properties of topological surface states of charge carriers in p-type Bi₂Te₃ films obtained by analyzing the magnetoresistance oscillations significantly expand fields of practical application and stimulate the investigation of transport properties of chalcogenide films.     

Characterisation of the Fermi surface and phase transitions of (BEDO-TTF)2 ReO4·(H2O) by physical property measurements and electronic band structure calculations

The electronic properties of the organic superconductor (BEDO-TTF)₂ ReO₄·(H₂O) were investigated by temperature dependent resistivity, ESR, Hall effect and magnetoresistance measurements. Shubnikov-de Haas (SdH) oscillations were observed in magnetic fields up to 24 T in the temperature range 0.5 K to 4.2 K. The electronic band structure of (BEDO-TTF)₂ ReO₄·(H₂O) was calculated by employing the extended Hückel tight binding method on the basis of its room temperature crystal structure. The two observed SdH frequencies of 75 T and 37 T correspond very well with two cross-sectional areas of the hole and electron Fermi surface pockets obtained from the tight binding calculation. From the temperature dependence of the SdH oscillation amplitudes, the cyclotron effective mass (m_c) belonging to the larger and smaller pockets were found to be 0.9 m₀ and m_c=1.15 m₀ respectively. Measurements of the angular dependence of the SdH frequencies show no deviation from that expected for a cylindrical Fermi surface. In terms of our tight binding calculations and experimental measurements, probable causes for the 213 K and 35 K phase transitions are discussed. The calculations show that (BEDO-TTF)₂ ReO₄·(H₂O) is a two dimensional semimetal but possesses a hidden nesting. The latter is likely to cause an SDW instability leading to the 35 K transition. The resistivity drop associated with the 213 K transition is likely to be induced by an abrupt increase in the relaxation time. The excellent agreement between the calculated and experimentally observed Fermi surface implies that, with decreasing temperature below 35 K, (BEDO-TTF)₂ ReO₄·(H₂O) gradually gets out of the SDW state and re-enters the original metallic state, in which it becomes superconducting below 2.4 K.Reported at the 13th Genral Conference of the Condensed Matter Division of the European Physical Society, Regensburg, March 1993     

Field-induced CDW in HMTSF-TCNQ

Field-induced successive transitions were observed in magnetoresistance in the quasi-one-dimensional organic conductor, HMTSF-TCNQ, hexamethylene-tetraselena-fulvalene-tetracyanoquinodimethane. The magnetoresistance exhibits kink transitions accompanying hysteresis at pressures around 1 GPa, but neither at p=0 nor at 2 GPa. At p=0 and below 30 K, this material undergoes charge density wave (CDW) state, which is suppressed around 1 GPa, where successive transitions are observed. Since these behavior is only observed at the boundary in pressure between insulator and metal, and the nature of the insulating state is CDW at p=0, it is strongly suggested that the successive transitions observed in magnetoresistance might be associated with CDW, accordingly a field-induced CDW by the one-dimensionalization by strong magnetic field ranging from 10 to 30 T. The behaviors are compared with previously claimed FICDW and the established FISDW (field-induced-spin-density-wave).     

de Haas-van Alphen effect and the Fermi surface of PrNi5

The Fermi surface of PrNi₅ has been studied by the measurements of the de Haas-van Alphen (dHvA) effect at temperatures between 0.3 and in magnetic fields up to 12 T. Two dHvA frequencies have been obtained. The electronic structure of PrNi₅ was calculated using the full potential linearized augmented plane wave method. Five sheets of the Fermi surface and the multiple extremal cross sections were determined. First and second sheet have a hole-like structure. The agreement between theory and experiment is obtained by a small downward shift ( 0.1 eV) of the Fermi energy which is probably due to an underestimation of the role of 4 f electrons. Received 9 May 2000 and Received in final form 20 September 2000