共查询到20条相似文献,搜索用时 546 毫秒
1.
K.?Sudheendran M.?Ghanashyam?Krishna K.?C.?James?Raju 《Applied Physics A: Materials Science & Processing》2009,95(2):485-492
Bismuth Zinc niobate (Bi1.5Zn1.0Nb1.5O7) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures.
The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited
and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C
in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited
thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36–2.53
(at a wavelength of 750 nm) with an optical absorption edge value of 3.30–3.52 eV and a maximum dielectric constant of 11
at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase
in band gap, refractive index and microwave dielectric constant. 相似文献
2.
Vali Dalouji 《Optical and Quantum Electronics》2018,50(8):325
The aim of this work is to investigate the optical constants of aluminum doped zinc oxide films annealed at different temperatures. With increasing temperature, due to decreasing unfilled inter-granular volume per unit thickness, the optical transmittance spectra of films were increased. The films have a normal dispersion in the spectral range 400?<?λ?<?500 nm and the anomalous dispersion in IR range. The lattice dielectric constants εL, the free charge carriers concentration, the plasma frequency, Spitzer–Fan model and the waste of electrical energy as heat of films can be analyzed using the refractive index n and the extinction coefficient k spectra. With increasing annealing temperature, the lattice dielectric constants εL of films decrease however the free charge carriers concentration of films increase. The free carrier electric susceptibility of films annealed at 600 °C has maximum value. The energy loss by the free charge carriers when traversing the bulk and surface of films annealed at 600 °C has a minimum value in the near fundamental absorption edge and it with increasing energy increases. 相似文献
3.
Hao Wang Y. Wang J. Feng C. Ye B. Y. Wang H. B. Wang Q. Li Y. Jiang A. P. Huang Z. S. Xiao 《Applied Physics A: Materials Science & Processing》2008,93(3):681-684
High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The
as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N2 atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage
shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in
the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage
current density of 4.2×10−8 A/cm2 at the applied voltage of −1.5 V. 相似文献
4.
Lead zirconate titanate (PZT) films were fabricated on Pt(111)/Ti/SiO2/Si(100) using the triol sol--gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties and ferroelectric properties of the PZT thin films was investigated. Randomly-oriented PZT thin films pre-heated at 400°C for 10?min and annealed at 600°C for 30?min showed well-defined ferroelectric hysteresis loops with a remanent polarization of 26.57?µC?cm?2 and a coercive field of 115.42?kV?cm?1. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free and homogeneous with fine grains about 15–20?nm in size. 相似文献
5.
《Chinese Journal of Physics (Taipei)》2018,56(5):2129-2138
Zinc oxide (ZnO) thin films were sol–gel spin coated on glass substrates, annealed at various temperatures 300 °C, 400 °C and 500 °C and characterized by spectroscopic ellipsometry method. The optical properties of the films such as transmittance, refractive index, extinction coefficient, dielectric constant and optical band gap energy were determined from ellipsometric data recorded over the spectral range of 300–800 nm. The effect of annealing temperature in air on optical properties of the sol–gel derived ZnO thin films was studied. The transmission values of the annealed films were about 65% within the visible range. The optical band gap of the ZnO thin films were measured between 3.25 eV and 3.45 eV. Also the dispersion parameters such as single oscillator energy and dispersive energy were determined from the transmittance graph using the Wemple and DiDomenico model. 相似文献
6.
In this work, we report on the growth and characterization of polycrystalline BiFeO3 (BFO) thin films deposited on indium tin oxide (ITO) coated glass substrates via the chemical solution deposition technique.
The as-deposited films were crystallized by heat treatment at various temperatures for 1 h in various atmospheres, i.e. oxygen,
air and nitrogen. Grazing angle X-ray diffraction (GIXRD) analysis of the heat treated films revealed that both annealing
temperatures as well as the atmosphere, had a pronounced effect on the formation of pure perovskite-type BiFeO3 phase. Ferroelectric measurements showed that the films heat treated in nitrogen showed superior characteristics to those
heat treated in air and oxygen with a remanent polarization of 0.52 μC/cm2 and 1.9 μC/cm2 for the films annealed at 600 °C and 650 °C respectively at an applied field of 60 kV/cm. BiFeO3 films annealed in nitrogen also showed maximum dielectric constant (εr∼300), superior leakage resistance and magnetic properties over other films.
PACS 77.80.-e; 77.84.-S; 75.50.Bb 相似文献
7.
《Current Applied Physics》2020,20(6):751-754
Excellent dielectric frequency, bias, and temperature stability of bismuth silicate (Bi2SiO5, BSO) thin films with a low dielectric loss has been obtained in this study. The thin films were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method at a relatively low annealing temperature of 500 °C. The BSO films have a preferred growth along (200) orientation with dense fine-grained surface morphology. The dielectric constant and dielectric loss of the thin film annealed at 500 °C are 57 and 0.01, respectively, at 100 kHz, with little change between 1 kHz and 100 kHz and in the bias electric field range between −250 kV/cm and 250 kV/cm, indicating that the thin film exhibits a low dielectric loss as well as excellent frequency and bias field stability. The dielectric-temperature measurements confirmed that the BSO thin film annealed at 500 °C also has good temperature stability between 150 K and 450 K. Our results suggest that the BSO thin films have potential applications in the next-generation integrated capacitors. 相似文献
8.
Metallo-organic decomposition derived dielectric thin films of calcium zirconate doped with various concentrations of strontium ((Ca, Sr)ZrO3) were prepared on Pt coated silicon substrate. Mainly in this paper, we present the investigations of their structural developments and present their electric and dielectric properties as well. The structural developments show that the CaZrO3 film has amorphous structure with carbonate existing when annealed at 600 °C, while annealed at 650 °C and above, the carbonate is decomposed and those films crystallize into perovskite phase without preferred orientation. In addition, the prepared (Ca, Sr)ZrO3 films with their Zr-O bonds affected by strontium doping are homogenous and stable as solid solutions in any concentration of strontium and all Bragg diffraction characteristics for the films shift downward with the increase in the concentration of strontium. Moreover, the electric properties show that the (Ca, Sr)ZrO3 films have very low leakage current density and high breakdown strength; typically, the CaZrO3 film annealed at 650 °C has the leakage current density approximately 9.5 × 10−8 A cm−2 in the field strength of 2.6 MV cm−1. Furthermore, the dielectric properties show that their dielectric constants are higher than 12.8 with very little dispersion in the frequency range from 100 Hz to 1 MHz and are independent of applied dc bias as well. The dielectric properties, in combination with the electric properties, make the materials promising candidates for high-voltage and high-reliability capacitor applications. 相似文献
9.
Wei-Yan Cong Su-Mei Li Ying-Jie Wang Lin Tao Xiao-Yan Liu Wei-Min Zheng 《Journal of luminescence》2012,132(1):161-163
Ce-doped silica films with different Ce concentrations were prepared by ion-beam sputtering and ion implantation. The films containing 1.2 at% Ce were annealed at temperatures from 500 °C to 1200 °C in air ambient, and were annealed in different ambient at 1100 °C. Ce-related photoluminescence was observed in films sensitive to the Ce concentrations, annealing temperatures and the annealing ambient. The peak intensity of the photoluminescence band is approximately linear with Ce concentrations. Also, the photoluminescence intensity is dependent on the annealing temperatures and reaches its highest value after annealing at 700 °C. In addition, the experimental results show that compared with the annealing in an air ambient, the photoluminescence intensity can be enhanced with nitrogen gas. There would be no obvious change for the photoluminescence position or shape. 相似文献
10.
Shoubin Xue Xing Zhang Ru Huang Huizhao Zhuang 《Applied Physics A: Materials Science & Processing》2009,94(2):287-291
ZnO thin films were first prepared on Si(111) substrates using a radio frequency magnetron sputtering system. Then the as-grown
ZnO films were annealed in oxygen ambient at temperatures of 700, 800, 900, and 1000°C , respectively. The morphologies of
ZnO films were studied by an atom force microscope (AFM). Subsequently, GaN epilayers about 500 nm thick were deposited on
the ZnO buffer layers. The GaN/ZnO films were annealed in NH3 ambient at 900°C. The microstructure, morphology and optical properties of GaN films were studied by x-ray diffraction (XRD),
AFM, scanning electron microscopy (SEM) and photoluminescence (PL). The results are shown, their properties having been investigated
particularly as a function of the ZnO layers. For better growth of the GaN films, the optimal annealing temperature of the
ZnO buffer layers was 900°C. 相似文献
11.
X.B. Lu G.H. Shi J.F. Webb Z.G. Liu 《Applied Physics A: Materials Science & Processing》2003,77(3-4):481-484
SrZrO3 (SZO) thin films have been prepared on Pt-coated silicon substrates and directly on Si substrates by pulsed laser deposition (PLD) using a ZrSrO target at a substrate temperature of 400 °C in 20 Pa oxygen ambient. X-ray –2 scans showed that the as-deposited films remain amorphous at a substrate temperature of 400 °C. The dielectric constant of SZO has been determined to be in the range 24–27 for the Pt/SZO/Pt structure. Capacitance–voltage (C–V) characteristics of a metal-oxide-semiconductor (MOS) structure for SZO films deposited in 20 Pa oxygen ambient and 20 Pa nitrogen ambient (SZON) indicated that incorporation of nitrogen during the substrate heating and film deposition can suppress the formation of an interfacial SiO2 layer, and the SZON films have a lower equivalent oxide thickness (EOT) than that of the SZO films. However, the leakage current of the SZON films is larger than that of the SZO films. The EOT is about 1.2 nm for a 5-nm SZON film deposited at 400 °C. The leakage-current characteristics of as-deposited SZON films and SZON films post-annealed in oxygen ambient by rapid thermal annealing (RTA) have been studied comparatively. The films post-annealed with RTA have a lower leakage current than the as-deposited SZON films. Optical transmittance measurements showed that the band gap of the films is about 5.7 eV. It is proposed that SrZrO3 films prepared at 400 °C are potential materials for alternative high-k gate-dielectric applications. PACS 77.84.Bw; 77.84.-s; 77.55.+f 相似文献
12.
Neodymium-substituted Bi4Ti3O12 (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of
the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres,
such as O2, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good
ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A
large remanent polarization (Pr) of ∼48 μC/cm2 with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in O2 atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller Pr than that annealed in oxygen. The difference of Pr of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number
of oxygen vacancies.
PACS 77.55.+f; 77.80.-e; 77.80.Fm; 81.15.-z 相似文献
13.
M.F. Al-Kuhaili S.M.A. Durrani I.A. Bakhtiari M. Saleem 《Optics Communications》2012,285(21-22):4405-4412
Zinc oxide thin films were deposited by radio frequency magnetron sputtering. The films were annealed in vacuum at temperatures of 400, 600, and 800 °C. The influence of annealing on the structural, chemical, and optical properties of the films was investigated. From a structural point of view, the films were highly oriented, with columnar microstructure. Chemical analysis indicated that the films were sub-stoichiometric, and that the concentration of oxygen vacancies was enhanced upon annealing. The films were highly transparent in the visible and near-infrared spectral regions. Transparency was reduced as the annealing temperature was increased. The refractive index and extinction coefficient, in the transparent regions of the films, were derived from transmittance measurements. The refractive index manifested variation that was affected by crystallite size, roughness and defect concentration. The extinction coefficient of the as-deposited films and those annealed at 400 °C was negligible. However, the films annealed at 600 or 800 °C had much larger values of the extinction coefficient due to increased absorption or scattering. The absorption coefficient and optical band gap of the films were derived from spectrophotometric measurements. The absorption coefficient showed progressive increase with the annealing temperature. However, the band gap did not show significant variation. 相似文献
14.
W.J. Kim W. Chang S.B. Qadri J.M. Pond S.W. Kirchoefer J.S. Horwitz D.B. Chrisey 《Applied Physics A: Materials Science & Processing》2000,70(3):313-316
The relationship between the structure and the microwave dielectric properties of epitaxial Ba0.5Sr0.5TiO3 (BST) films has been investigated. Single-phase BST films (40-160 nm) have been deposited onto (100) MgO substrates by pulsed laser deposition. As-deposited films show a significant tetragonal distortion. The in-plane lattice parameters (a) are always larger than the surface normal lattice parameters (c). The tetragonal distortion depends on the thickness of the films and the post-deposition annealing conditions. Films annealed at 900 °C show less tetragonal distortion than the as-deposited film and the films annealed at higher temperatures. The distortion in the film is due to stress caused by the lattice mismatch and thermal expansion coefficient differences between the film and the substrate. The dielectric constant and its change with dc bias voltage of BST films on MgO at microwave frequencies increase with increasing annealing temperature from 900 °C to 1200 °C, which corresponds to an increase in the tetragonal distortion. 相似文献
15.
M. F. Al-Kuhaili S. M. A. Durrani I. A. Bakhtiari 《Applied Physics A: Materials Science & Processing》2010,98(3):609-615
Thin films of molybdenum oxide were deposited in vacuum by pulsed laser ablation using a xenon fluoride (351 nm) and a krypton
fluoride (248 nm) excimer lasers. The films were deposited on unheated substrates and were post-annealed in air in the temperature
range 300–500°C. The structural, morphological, chemical, and optical properties of the films were studied. As-deposited films
were found to be dark. The transparency of the films was improved with annealing in air. The films were polycrystalline with
diffraction peaks that belong to the orthorhombic phase of MoO3. The surface morphology of the films showed a layered structure. Both the grain size and surface roughness increased with
annealing temperature. The stoichiometry of the films improved upon annealing in air, with the best stoichiometry of MoO2.95 obtained for films deposited by the XeF laser and annealed at 400°C. Similarly, the best transparency, with a transmittance
exceeding 80%, was obtained with the films annealed in the temperature range 400–450°C. 相似文献
16.
Haripriya Rath S. Anand M. Mohapatra Priyadarshini Dash T. Som U. P. Singh N. C. Mishra 《Indian Journal of Physics》2009,83(4):559-565
Nanostructured TiO2 thin films have been prepared through chemical route using sol-gel and spin coating techniques. The deposited films were
annealed in the temperature range 400–1000°C for 1 h. The structure and microstructure of the annealed films were characterized
by GAXRD, micro-Raman spectroscopy and AFM. The as-deposited TiO2 thin films are found to be amorphous. Micro-Raman and GAXRD results confirm the presence of the anatase phase and absence
of the rutile phase for films annealed up to 700°C. The diffraction pattern of the film annealed at 800 to 1000°C contains
peaks of both anatase and rutile reflections. The intensity of all peaks in micro-Raman and GAXRD patterns increased and their
width (FWHM) decreased with increasing annealing temperature, demonstrating the improvement in the crystallinity of the annealed
films. Phase transformation at higher annealing temperature involves a competition among three events such as: grain growth
of anatase phase, conversion of anatase to rutile and grain growth of rutile phase. AFM image of the asdeposited films and
annealed films indicated exponential grain growth at higher temperature.
相似文献
17.
(Pb,Ca)TiO3 (PCT) thin films have been deposited on Pt/Ti/SiO2/Si substrate by metal-organic decomposition (MOD) technique. The film processing parameters such as drying and annealing temperatures have been optimized to obtain good-quality PCT films. Compositional analysis of the film has been studied by X-ray photoelectron spectroscopy (XPS). The effect of the annealing temperature on the crystalline structure, microstructure and electrical properties have been investigated by X-ray diffraction, atomic force microscopy (AFM) and impedance analyzer, respectively. Amorphous PCT films form at 350 °C and crystallize in the perovskite phase following the isothermal annealing at ?650 °C for 3 h in oxygen ambient. Typical tetragonal structure of the PCT film is evidenced from X-ray diffraction pattern. The grain size in the PCT films increases with an increase in annealing temperature. Significant improvement in the dielectric constant value is observed as compared to other reported work on PCT films. The observed dielectric constant and dissipation factor at 100 kHz for 650 °C annealed PCT films are 308 and 0.015, respectively. The correlation of the film microstructural features and electrical behaviors is described. 相似文献
18.
L. Pintilie I. Pintilie D. Petre T. Botila M. Alexe 《Applied Physics A: Materials Science & Processing》1999,69(1):105-109
Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi4Ti3O12 (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and
0.6 eV. The total trap concentration was estimated at 1015 cm−3 for the samples annealed at 550 °C and 3×1015 cm−3 for a 700 °C annealing and the trap capture cross-section was estimated about 10−18 cm2. From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation
energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature
but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering
the influence of oxygen atoms and oxygen vacancies.
Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999 相似文献
19.
《Solid State Communications》1986,58(7):455-456
NMR measurements were made at 77 K and 4.2 K for hydrogenated amorphous Si films prepared by glow discharge decomposition on room temperature substrate and annealed up to 500°C. It is found that the narrow component line in the NMR signal observed at 77 K or above for films annealed above 400 °C is motionally narrowed one. 相似文献
20.
Jaroslav Bruncko Andrej Vincze Marie Netrvalova Pavol Sutta Miroslav Michalka Frantisek Uherek 《Applied Physics A: Materials Science & Processing》2013,110(4):877-882
Alloyed ZnO:Al thin films were prepared by a pulsed laser deposition by the altering of two pure targets (ZnO and Al) during the deposition process. Two deposition temperatures (?197 °C and 400 °C) were applied and differences of diffusion dynamics were compared. As-grown layered films were annealed and aluminium distribution was homogenized. The results revealed that the amorphous structure (samples grown at ?197 °C) of ZnO provide more positive conditions for efficient Al diffusion in comparison with crystalline structure (samples grown at 400 °C). A detailed investigation by SIMS depth profiling confirmed a homogeneous chemical composition of annealed and recrystallized films which exhibited a porous nature and wurtzite crystalline structure. 相似文献