The photodamping of dislocations in KCl single crystals

The effect of F-light (λ = 550 nm) on the dislocation amplitude-dependent internal friction (dislocation photodamping) and dislocation charge in KCl crystals of different purity containing F-centers has been investigated. The photodamping process in all the crystals under study has been found to be due to the optical generation of new pinning points. The conditions of photopinner formation are found to depend on the magnitude of dislocation charge, the manner of the F-center introduction (γ-irradiation, additive coloration), and crystal purity. A model of photopinner formation has been proposed. The results obtained are used to analyse the binary systems in which the effect of dislocation photodamping is likely to occur.     

The effect of a weak magnetic field on the mobility of dislocations in silicon

The magnetoplastic effect in dislocation silicon is discovered. It is shown that in the presence of tensile stresses (up to 20 MPa), the mechanically activated path of surface dislocation half-loops is limited mainly by the dynamics of defects in various slip systems relative to the applied load. The activation barriers for the motion of dislocations controlled by various conditions in the temperature range T=850–950 K are E _aF=2.1±0.1 eV and E _aS=1.8±0.1 eV. An increase in the path of surface dislocation half-loops and a change in the activation barriers are detected (E _aF=1.4±0.1 eV and E _aS=1.6±0.1 eV) after subjecting silicon to a magnetic field (B=0.7 T) for 30 min. Possible reasons behind the observed effects are discussed.     

Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon

The strong effect of a magnetic field on the starting stress and mobility of individual dislocations is discovered in silicon grown by the Czochralski method with a high concentration of dissolved oxygen. It is shown that exposure of dislocations preliminarily introduced into the sample to a magnetic field considerably reduces the starting stresses for the motion of these dislocations. The effect is not observed in samples with a low oxygen concentration. It is assumed that the magnetic field induces singlet-triplet transitions in thermally excited states of silicon-oxygen complexes in the dislocation core, thus stimulating a change in the state (atomic configuration) of oxygen already located at dislocations. As a result, the mean binding energy of oxygen with a dislocation decreases.     

The effect of microsegregation on the generation of dislocations in zinc single crystals

The applicability of Tiller's considerations on the production of dislocations is proved. The density of dislocations appearing during impurity microsegregation increases with increasing rate of growth as a consequence of the corresponding change in the effective distribution coefficient. The real value of C at the microsegregation boundaries is at least twice as great as the average value of the concentration of impurities in the crystal in question.

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Effects of doping and preliminary processing on the magnetically stimulated mobility of dislocations in InSb single crystals

The effect of the type of conductivity and the doping level of InSb single crystals on the mobility of fast 60° dislocations in a magnetic field is discovered. It is found that doping of a pure InSb crystal with tellurium (n-type impurity) to 10¹⁸ cm^?3 reduces the mobility of dislocations to the background level. At the same time, in p-type InSb crystals doped with Ge with the same carrier concentration (10¹⁸ cm^?3), the magnetoplastic effect is manifested clearly. It is shown that preliminary mechanical loading and, hence, internal stresses in the crystal affect not only the mean path length of dislocations in a magnetic field but also the magnitude of the threshold magnetic field below which the magnetoplastic effect is not observed. Possible reasons for these phenomena are discussed.     

Influence of light and magnetic field on dislocation mobility in ionic crystals

We discuss the role of exchange forces between paramagnetic centers in the bulk and on dislocationsd as a determinant of the plastic properties of diamagnetic crystals. It is shown that the movement of individual dislocations may be used as a measure of the intensity of mechanically active radical chemical reactions with a sensitivity to changes in the spin state at the level of one hundred atoms. G. R. Derzhavin University, Tambov. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 31–36, July, 1998.     

Dynamics of kinks on dislocations in SiGe single crystals

The method of intermittent pulse loading is used for obtaining the dependences of the mean free path of individual dislocations in SiGe single crystals with various concentration of Ge (0–5.5 at. %) on the duration of loading pulses and time intervals between them. It is found that these dependences change qualitatively upon an increase in the Ge concentration. It is shown that the motion of dislocations in SiGe crystals under small shear stresses is characterized by a nonlinear drift of kinks and the formation of superkinks. A theory of the motion of dislocations under the action of intermittent pulse loading under the conditions of heterogeneous kink dynamics is developed. Extended quasi-one-dimensional defects repeating the shape of a part of a segment of a moving dislocation are discovered in SiGe crystals containing 0.96 at. % Ge. The mechanism of formation of such defects as the result of the shedding of a part of the impurity atmosphere by a dislocation segment during overcoming of a local obstacle is proposed.     

Effect of a pulsed magnetic field on the microhardness of C60 single crystals

Magnetic-field pulses with induction greater than 10 T were observed to influence the microhardness of C₆₀ single crystals. It was established that the magnetic field reversibly alters the bulk properties of the material. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 2, 110–113 (25 January 1999)     

Serrated creep of zinc single crystals under compression in a magnetic field

The compressive creep rate of zinc single crystals was measured for sample deformation increments of 150 nm, which permits the measurement of deformation jumps larger than 300 nm. A weak magnetic field B = 0.2 T is shown to increase the average creep rate and decrease the height and sharpness of submicron-sized deformation jumps. Preliminary holding of a sample in a magnetic field also influences the creep rate and the characteristics of deformation jumps. The data are explained in terms of a model relating the effect of a magnetic field to the destruction of barriers to dislocation motion.     

Photoconductivity of potassium colloids in KCl single crystals

Detailed photoconductivity spectra of potassium colloids in KCl single crystals are presented. A broad band peaked at ～2 eV, together with a small shoulder at ～1.3 eV are observed for crystals containing colloids with radii in the 20–500 Å range.The spectrum shape is essentially independent of temperature and colloid radius. On the other hand, the maximum photoconductivity yield depends on the colloid radius reaching a maximum value at about 60 Å.     

The distribution of dislocations in slip bands of Fe-3% Si alloy single crystals deformed by bending

The distribution of dislocations at the ends of slip bands was studied by etching on surfaces parallel to the slip plane. In these places the slip band is formed by groups of asymmetric dislocation loops several hundred microns wide. The long mixed-type parts of these loops running nearly equidistantly and lying in near planes, are the equilibrium arrangement of dislocations of the same sign in the shear stress gradient. From the results we can judge that the dislocation sources are at larger distances from the ends of the slip bands and that the dislocation groups at the ends of the slip bands are sources of large stress fields.     

Effect of ultrasonic treatment on the mobility of short dislocations in Si crystals

The effect of ultrasonic treatment on the mobility of short surface dislocations in Si crystals is investigated. It is found that ultrasonic treatment of Si crystals changes the velocity of dislocations under a permanent mechanical load. The nature of variation of dislocation velocity is determined by the sign of external stresses acting on the sample: compressive forces decrease while tensile forces increase the velocity of dislocations. After ultrasonic treatment of the samples, a decrease in the activation energy for dislocation motion and the enhancement of the electroplastic effect are observed. A possible mechanism of the observed effects is considered.     

On the mechanism of the electric field effect on dislocation mobility in alkali-halide crystals

The dependence is investigated of the velocity of motion of edge and screw dislocations on the applied shear stress in annealed and quenched NaCl and KC1 crystals with various impurity content under the action of an electric field of up to 50 kV/cm. It is shown that in impure crystals the action of the field is determined by its effect on damping centers, while in pure crystals, by its effect on charged dislocations. The interaction force of an edge dislocation with impurity-vacancy dipoles of various orientation is calculated. The charge density and sign of a dislocation is estimated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 16–21, May, 1975.     

Effect of a magnetic field on the plasticity and photo-and electroluminescence of ZnS single crystals

It is found that a ∼10 T magnetic field influences the microhardness and the photo-and electroluminescence of ZnS single crystals containing microtwins. It is established that a magnetic field irreversibly changes the properties of the crystal, leading to relaxation of the metastable states of structural defects. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 2, 114–118 (25 January 1999)     

Effect of a magnetic field on the flow stress of Co and Fe single crystals

In a range of plastic deformation, the flow stress drop and the stress relaxation of Co and Fe single crystals are observed under an a.c. magnetic field. The magnitude of these drops is discussed on the basis of different deformation modes due to the crystal structure.