Dewetting of thin metal films is one of the most widespread method for functional plasmonic nanostructures fabrication. However, simple thermal‐induced dewetting does not allow to control degree of nanostructures order without additional lithographic process steps. Here we propose a novel method for lithography‐free and large‐scale fabrication of plasmonic nanostructures via controllable femtosecond laser‐induced dewetting. The method is based on femtosecond laser surface pattering of a thin film followed by a nanoscale hydrodynamical instability, which is found to be very controllable under specific irradiation conditions. We achieve control over degree of nanostructures order by changing laser irradiation parametrs and film thickness. This allowed us to exploit the method for the broad range of applications: resonant light absorbtion and scattering, sensing, and potential improving of thin‐film solar cells.
Narrow‐linewidth lasers are key elements in optical metrology and spectroscopy. Spectral purity of these lasers determines accuracy of the measurements and quality of collected data. Solid state and fiber lasers are stabilized to relatively large and complex external optical cavities or narrow atomic and molecular transitions to improve their spectral purity. While this stabilization technique is rather generic, its complexity increases tremendously moving to longer wavelenghts, to the infrared (IR) range. Inherent increase of losses of optical materials at longer wavelengths hinders realization of compact, room temperature, high finesse IR cavities suitable for laser stabilization. In this paper, we report on demonstration of quantum cascade lasers stabilized to high‐Q crystalline mid‐IR microcavities. The lasers operating at room temperature in the 4.3‐4.6 μm region have a linewidth approaching 10 kHz and are promising for on‐chip mid‐IR and IR spectrometers.
This article presents a novel III‐V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side‐coupled to a III‐V waveguide, will provide high and narrow‐band reflectivity into the III‐V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side‐mode suppression ratio up to 48 dB.
The terahertz (THz) radiation from InGaN/GaN dot‐in‐a‐wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three‐dimensional quantum‐confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light‐emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.
Two hundred years after Malus' discovery of optical anisotropy, the study of polarization‐driven optical effects is as active as ever, generating interest in new phenomena and potential applications. However, in ultrafast optics, the influence of polarization is frequently overlooked being considered as either detrimental or negligible. Here we demonstrate that spatio‐temporal couplings, which are inherent for ultrafast laser systems with chirped‐pulse amplification, accumulate in multi‐pulse irradiation and lead to a strongly anisotropic light‐matter interaction. Our results identify angular dispersion in the focus as the origin for the polarization dependence in modification, yielding an increase in modification strength. With tight focusing (NA ≥ ∼0.4), this non‐paraxial effect leads to a manifestation of spatio‐temporal couplings in photo‐induced modification. We devise a practical way to control the polarization dependence and exploit it as a new degree of freedom in tailoring laser‐induced modification in transparent material. A near‐focus, non‐paraxial field structure analysis of an optical beam provides insight on the origin of the polarization dependent modification. However, single pulse non‐paraxial corrected calculations are not sufficient to explain the phenomena confirming the experimental observations and exemplifying the need for multi‐pulse analysis.
In the development of microfluidic chips, conventional 2D processing technologies contribute to the manufacturing of basic microchannel networks. Nevertheless, in the pursuit of versatile microfluidic chips, flexible integration of multifunctional components within a tiny chip is still challenging because a chip containing micro‐channels is a non‐flat substrate. Recently, on‐chip laser processing (OCLP) technology has emerged as an appealing alternative to achieve chip functionalization through in situ fabrication of 3D microstructures. Here, the recent development of OCLP‐enabled multifunctional microfluidic chips, including several accessible photochemical/photophysical schemes, and photosensitive materials permiting OCLP, is reviewed. To demonstrate the capability of OCLP technology, a series of typical micro‐components fabricated using OCLP are introduced. The prospects and current challenges of this field are discussed.
III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III‐nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD‐based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD‐based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III‐nitride light‐emitting devices with QD active regions have the potential to outperform quantum well light‐emitting devices, and enable an era of ultra‐efficient solid‐state lighting.
The progress on multi‐wavelength quantum cascade laser arrays in the mid‐infrared is reviewed, which are a powerful, robust and versatile source for next‐generation spectroscopy and stand‐off detection systems. Various approaches for the array elements are discussed, from conventional distributed‐feedback lasers over master‐oscillator power‐amplifier devices to tapered oscillators, and the performances of the different array types are compared. The challenges associated with reliably achieving single‐mode operation at deterministic wavelengths for each laser element in combination with a uniform distribution of high output power across the array are discussed. An overview of the range of applications benefiting from the quantum cascade laser approach is given. The distinct and crucial advantages of arrays over external cavity quantum cascade lasers as tunable single‐mode sources in the mid‐infrared are discussed. Spectroscopy and hyperspectral imaging demonstrations by quantum cascade laser arrays are reviewed.
A compact 64‐channel hybrid demultiplexer based on silicon‐on‐insulator nanowires is proposed and demonstrated experimentally to enable wavelength‐division‐multiplexing and mode‐division‐multiplexing simultaneously in order to realize an ultra‐large capacity on‐chip optical‐interconnect link. The present hybrid demultiplexer consists of a 4‐channel mode multiplexer constructed with cascaded asymmetrical directional‐couplers and two bi‐directional 17 × 17 arrayed‐waveguide gratings (AWGs) with 16 channels. Here each bi‐directional AWG is equivalent as two identical 1 × 16 AWGs. The measured excess loss and the crosstalk for the monolithically integrated 64‐channel hybrid demultiplexer are about ‐5 dB and ‐14 dB, respectively. Better performance can be achieved by minimizing the imperfections (particularly in AWGs) during the fabrication processes.
This work proves the feasibility of a novel concept of differential absorption lidar based on the Scheimpflug principle. The range‐resolved atmospheric backscattering signal of a laser beam is retrieved by employing a tilted linear sensor with a Newtonian telescope, satisfying the Scheimpflug condition. Infinite focus depth is achieved despite employing a large optical aperture. The concept is demonstrated by measuring the range‐resolved atmospheric oxygen concentration with a tunable continuous‐wave narrow‐band laser diode emitting around 761 nm over a path of one kilometer during night time. Laser power requirements for daytime operation are also investigated and validated with single‐band atmospheric aerosol measurements by employing a broad‐band 3.2‐W laser diode. The results presented in this work show the potential of employing the continuous‐wave differential absorption lidar (CW‐DIAL) technique for remote profiling of atmospheric gases in daytime if high‐power narrow‐band continuous‐wave light sources were to be employed.
Monocrystalline titanium dioxide (TiO2) micro‐spheres support two orthogonal magnetic dipole modes at terahertz (THz) frequencies due to strong dielectric anisotropy. For the first time, we experimentally detected the splitting of the first Mie mode in spheres of radii m through near‐field time‐domain THz spectroscopy. By fitting the Fano lineshape model to the experimentally obtained spectra of the electric field detected by the sub‐wavelength aperture probe, we found that the magnetic dipole resonances in TiO2 spheres have narrow linewidths of only tens of gigahertz. Anisotropic TiO2 micro‐resonators can be used to enhance the interplay of magnetic and electric dipole resonances in the emerging THz all‐dielectric metamaterial technology.
Inspired from butterfly wings that exhibit unique dewetting properties and brilliant structural color synchronously, we reported here the preparation of biomimetic few‐layer graphene films through a template‐directed chemical vapor deposition method using laser‐structured Cu foil as substrates. Hierarchical micronanostructures, including microscale stripes derived from the laser scanning and nanoscale laser‐induced periodic surface structures (LIPSS), formed on Cu foil after a simple femtosecond laser treatment. By tuning the laser power, the surface roughness of the resultant Cu foils can be well controlled. Using the laser structures Cu foil as templates, biomimetic few‐layer graphene films with both iridescence and superhydrophobicity have been successfully prepared. The present work may open up a new way to design and prepare structured graphene film in a biomimetic manner, and we deem that the bioinspired few‐layer graphene films may find broad applications in the near future.
We propose all‐dielectric metasurfaces that can be actively re‐configured using the phase‐change material Ge2Sb2Te5 (GST) alloy. With selectively controlled phase transitions on the composing GST elements, metasurfaces can be tailored to exhibit varied functionalities. Using phase‐change GST rod as the basic building block, we have modelled metamolecules with tunable optical response when phase change occurs on select constituent GST rods. Tunable gradient metasurfaces can be realized with variable supercell period consisting of different patterns of the GST rods in their amorphous and crystalline states. Simulation results indicate a range of functions can be delivered, including multilevel signal modulating, near‐field coupling of GST rods, and anomalous reflection angle controlling. This work opens up a new space in exploring active meta‐devices with broader applications that cannot be achieved in their passive counterparts with permanent properties once fabricated.
An analytical model is presented describing the temporal intensity contrast determined by amplified spontaneous emission in high‐intensity laser systems which are based on the principle of chirped pulse amplification. The model describes both the generation and the amplification of the amplified spontaneous emission for each type of laser amplifier. This model is applied to different solid state laser materials which can support the amplification of pulse durations . The results are compared to intensity and fluence thresholds, e.g. determined by damage thresholds of a certain target material to be used in high‐intensity applications. This allows determining if additional means for contrast improvement, e.g. plasma mirrors, are required for a certain type of laser system and application. Using this model, the requirements for an optimized high‐contrast front‐end design are derived regarding the necessary contrast improvement and the amplified “clean” output energy for a desired focussed peak intensity. Finally, the model is compared to measurements at three different high‐intensity laser systems based on Ti:Sapphire and Yb:glass. These measurements show an excellent agreement with the model.
A Luneburg lens is a fascinating gradient refractive index (GRIN) lens that can focus parallel light on a perfect point without aberration in geometrical optics. Constructing a three‐dimensional (3D) Luneburg lens at optical frequencies is a challenging task due to the difficulty of fabricating the desired GRIN materials. Here, we present the practical implementation of a 3D Luneburg lens at optical frequencies. Such a 3D Luneburg lens is designed with GRIN 3D simple cubic metamaterial structures, and fabricated with dielectric metamaterials by femtosecond laser direct writing in the commercial negative‐photoresist IP‐L. Simulated and experimental results exhibit an interesting 3D ideal focus for the infrared light. The protocol for developing the 3D Luneburg lens with ideal focus would prompt the potential applications in integrated light‐coupled devices and lab‐on‐chip integrated biological sensors based on infrared light.
We demonstrate a high optoelectronic performance and application potential of our random network, with subwavelength diameter, ultralong, and high‐quality silver nanowires, stabilized on a substrate with a UV binder. Our networks show very good optoelectronic properties, with the single best figure of merit of ∼1686, and excellent stability under harsh mechanical strain, as well as thermal, and chemical challenge. Our network transparency strongly exceeds the simple shading limit. We show that this transmission enhancement is due to plasmonic refraction, which in an effective medium picture involves localized plasmons, and identify the inhomogeneous broadening as the key factor in promoting this mechanism. Such networks could become a basis for a next generation of ultrahigh‐performance transparent conductors.
We demonstrate a scheme incorporating dual‐coupled microresonators through which mode interactions are intentionally introduced and controlled for Kerr frequency comb (microcomb) generation in the normal‐dispersion region. Microcomb generation, repetition rate selection, and mode locking are achieved with coupled silicon nitride microrings controlled via an on‐chip microheater. The proposed scheme shows for the first time a reliable design strategy for normal‐dispersion microcombs and may make it possible to generate microcombs in an extended wavelength range (e.g. in the visible) where normal material dispersion is likely to dominate.
We experimentally demonstrate an optically‐pumped III‐V/Si vertical‐cavity laser with lateral emission into a silicon waveguide. This on‐chip hybrid laser comprises a distributed Bragg reflector, a III‐V active layer, and a high‐contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long‐wavelength vertical‐cavity surface‐emitting lasers, such as low threshold and high side‐mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has the potential for ultrahigh‐speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.
A scheme for active temporal‐to‐spatial demultiplexing of single photons generated by a solid‐state source is introduced. The scheme scales quasi‐polynomially with photon number, providing a viable technological path for routing n photons in the one temporal stream from a single emitter to n different spatial modes. Active demultiplexing is demonstrated using a state‐of‐the‐art photon source—a quantum‐dot deterministically coupled to a micropillar cavity—and a custom‐built demultiplexer—a network of electro‐optically reconfigurable waveguides monolithically integrated in a lithium niobate chip. The measured demultiplexer performance can enable a six‐photon rate three orders of magnitude higher than the equivalent heralded SPDC source, providing a platform for intermediate quantum computation protocols.
The broadband enhancement of single‑photon emission from nitrogen‐vacancy centers in nanodiamonds coupled to a planar multilayer metamaterial with hyperbolic dispersion is studied experimentally. The metamaterial is fabricated as an epitaxial metal/dielectric superlattice consisting of CMOS‐compatible ceramics: titanium nitride (TiN) and aluminum scandium nitride (AlxSc1‐xN). It is demonstrated that employing the metamaterial results in significant enhancement of collected single‑photon emission and reduction of the excited‐state lifetime. Our results could have an impact on future CMOS‐compatible integrated quantum sources.
