Surface-Grafted Polymer-Assisted Electroless Deposition of Metals for Flexible and Stretchable Electronics

Surface-grafted polymers, that is, ultrathin layers of polymer coating covalently tethered to a surface, can serve as a particularly promising nanoplatform for electroless deposition (ELD) of metal thin films and patterned structures. Such polymers consist of a large number of well-defined binding sites for highly efficient and selective uptake of ELD catalysts. Moreover, the polymer chains provide flexible 3D network structures to trap the electrolessly deposited metal particles, leading to strong metal–substrate adhesion. In the past decade, surface-grafted polymers have been demonstrated as efficient nanoplatforms for fabricating durable and high-performance metal coatings by ELD on plastic substrates for applications in flexible and stretchable electronics. This focus review summarizes these recent advances, with a particular focus on applications in polymeric flexible and stretchable substrates. An outlook on the future challenges and opportunities in this field is given at the end of this paper.     

半导体硅上激光诱导化学沉积镍薄膜

由于激光具有高能量密度、高单色性以及良好的相干性,在表面处理技术中的应用越来越广泛．在金属、半导体和高聚物基体上,从水溶液进行激光诱导的化学沉积引起了人们的极大注意,这种工艺在微电子电路及器件上有广泛的应用前景．与传统的化学镀相比,它具有明显的优越性...     

无铅镉化学镍沉积及其表征

优化无铅、无镉化学镍沉积工艺,应用扫描电子显微镜(SEM)、能量色散谱(EDS)、X射线衍射(XRD)和电化学方法表征化学镀镍层的形貌、组成、结构和电化学活性.结果表明,化学镍自催化沉积速率为22.4μm.h-1;沉积速率随溶液温度和pH值的提高而增大;比之硫酸镍,次磷酸钠对沉积速率的影响明显许多.化学镀镍层磷含量为7.8%(by mass),结构致密、晶粒细小,呈非晶态结构.在NaCl溶液中,镀层呈现良好的电化学耐蚀性.     

重氮树脂单层膜上铜的无电沉积

组装于硅片或玻璃片基片上的重氮树脂(DR)单层膜,吸附SnCl₂,Pd催化剂后,通过无电沉积的方法,在这些基片上制备了铜膜.对得到的铜膜进行了SEM,XRD表征.通过选择性无电沉积,成功地制备了铜膜图像.     

无电沉积高密度钯金属纳米线阵列

利用介孔氧化硅薄膜作为模板,通过无电沉积路线在介孔薄膜孔道内合成了高密度钯金属纳米线阵列.利用介孔薄膜导向剂的疏水区作为载体,引进钯金属疏水化合物并经热解和还原,得到钯微粒,以此为催化中心引发无电沉积,避免了传统无电沉积复杂的工艺过程.结果表明,纳米线尺寸均一,长径比大于60,完全填充了介孔薄膜的孔道,并可通过介孔模板孔径的选择对纳米线直径加以调控.     

卤离子对化学沉积镍的影响

用重量法测定了卤离子对化学沉积镍速度的影响．并借助电化学方法研究了卤离子对镍的化学沉积过程的极化曲线和稳定电位的影响．探讨了卤离子加速和稳定化学沉积镍的机理     

Atmospheric Pressure Plasma Deposition of Polyfuran

The atmospheric pressure radiofrequency (RF) plasma polymerization of furan was carried out with the objective of synthesizing polyfuran thin film. The structure, compositions and morphology of the plasma deposited polyfuran film were investigated by Fourier transform infrared (FTIR), atomic force microscopy (AFM), ultraviolet‐visible absorption spectroscopy (UV‐vis) and thermogravimetric analysis (TGA). The formation of polyfuran was confirmed using FTIR and UV‐visible analysis. The properties of plasma‐deposited polyfuran were compared with those of chemically synthesized polyfuran. Although the plasma deposited thin film polyfuran shows lower thermal stability than that of chemically synthesized polyfuran. It has better solubility in CHCl₃, also. Thin uniform polyfuran films are obtained in plasma assisted polyfuran deposition, while particles are obtained in chemical polyfuran polymerization.     

Enhanced Conductivity and Antibacterial Behavior of Cotton via the Electroless Deposition of Silver

In this study, the surface-initiated atom transfer radical polymerization (SI-ATRP) technique and electroless deposition of silver (Ag) were used to prepare a novel multi-functional cotton (Cotton-Ag), possessing both conductive and antibacterial behaviors. It was found that the optimal electroless deposition time was 20 min for a weight gain of 40.4%. The physical and chemical properties of Cotton-Ag were investigated. It was found that Cotton-Ag was conductive and showed much lower electrical resistance, compared to the pristine cotton. The antibacterial properties of Cotton-Ag were also explored, and high antibacterial activity against both Escherichia coli and Staphylococcus aureus was observed.     

氟化氢溶液无电沉积法制备W掺杂Ag树枝晶

应用无电沉积在氟化氢溶液制备W掺杂Ag树枝晶,样品由XPS,XRD,SEM和TEM表征,结果表明在Ag-W二元体系中,Ag的生长起主导作用,不受钨酸根离子而改变。提出W元素的掺杂方式,即W元素的掺杂是在银的沉积过程中通过化学吸附—钨酸根二聚体的氧原子与银原子的化学作用力而实现的。循环伏安法用于检测银氧间的化学键能的强弱。     

Electroless Deposition of III–V Semiconductor Nanostructures from Ionic Liquids at Room Temperature

Group III–V semiconductor nanostructures are important materials in optoelectronic devices and are being researched in energy‐related fields. A simple approach for the synthesis of these semiconductors with well‐defined nanostructures is desired. Electroless deposition (galvanic displacement) is a fast and versatile technique for deposition of one material on another and depends on the redox potentials of the two materials. Herein we show that GaSb can be directly synthesized at room temperature by galvanic displacement of SbCl₃/ionic liquid on electrodeposited Ga, on Ga nanowires, and also on commercial Ga. In situ AFM revealed the galvanic displacement process of Sb on Ga and showed that the displacement process continues even after the formation of GaSb. The bandgap of the deposited GaSb was 0.9±0.1 eV compared to its usual bandgap of 0.7 eV. By changing the cation in the ionic liquid, the redox process could be varied leading to GaSb with different optical properties.     

Pd在p型单晶硅(100)表面自催化化学沉积

研究了Pd在氢终止的p型单晶硅(100)表面的自催化化学沉积(AED). 在室温下将刻蚀过的硅片浸入常规的HF-PdCl2-HCl溶液制备了Pd膜. 将沉积了Pd的基底作为工作电极, 用循环伏安法(CV)、原子力显微镜(AFM)和X射线光电子能谱(XPS)研究了Pd膜的阳极溶出行为和形貌. 结果表明, Pd的生长遵循Volmer-Weber (VW)生长模式, Pd膜给出了很好的支持.     

Electroless Copper Sulfide Deposition on the Polyacrylonitrile Films with Chelating Agents and its EMI Shielding Effectiveness

In this study, an effective deposition of copper sulfide (Cu_{x(x = 1,2)}S) on the PAN film was proposed by an electroless deposition method with the reduction agents NaHSO₃ and Na₂S₂O₃ · 5H₂O and chelating agents (ethylenediaminetetraacetic acid, EDTA and triethanolamine, TEA). The mechanism of the Cu_{x(x = 1,2)}S growth and the electromagnetic interference shielding effectiveness (EMI SE) of the C_{ux(x = 1,2)}S/PAN films were studied. It was found that the vinyl acetate monomer residue in the PAN substrate would be purged due to the swelling effect by EDTA and TEA solution. And then, the anchoring effect occurred due to the hydrogen bonding between the pits of the PAN substrate and the chelating agent. The swelling degree (S_d) was proposed and evaluated from the FT-IR spectra. The relationship between swelling degree of the PAN films and EDTA concentration(C) is expressed as: S_d = 0.13 + 0.90 × eˆ(−15.15C_EDTA). And TEA series is expressed as: S_d = 0.07 + 1.00 × eˆ(−15.15C_TEA). On the other hand, the FESEM micrograph showed that the average thickness of copper sulfide increased from 76 nm to 383 nm when the concentration of EDTA increased from 0.00 M to 0.20 M. Consequently, the EMI SE of the C_{ux(x = 1,2)}S/PAN films increased from 10∼12 dB to 25∼27 dB. The GIA-XRD analyzer indicated that the deposited layer consisted of CuS and Cu₂S.     

玻璃表面的无钯活化化学镀镍

在非金属基体上化学镀镍 ,一般要先在基体上形成一层化学镀的催化剂 ,传统工艺是采用PdCl2 SnCl2 活化 敏化法[1 ] 。该工艺处理过程复杂 ,而且使用有毒的PdCl2 ,其价格昂贵。因此无钯活化法将带来巨大的经济效益和社会效益。我们曾在这方面进行了有益的尝试 ,如将玻璃表面经喷雾热解形成ZnO ,然后吸附银盐 ,活化还原 ,再化学镀[2 ] 。李兵等[3] 研究了非金属材料无钯催化活化工艺。研究了活化时间及温度对覆盖度的影响 ,但未给出具体活化液配方。本文提出了玻璃表面的一种无钯活化镀镍液配方 ,该配方由醋酸镍、甲醇、柠檬酸钠和氨组…     

Initiated Chemical Vapor Deposition of Poly(furfuryl methacrylate)

Furan ring‐functionalized solid surfaces are achieved by the initiated chemical vapor deposition (iCVD) method, a solvent‐free process to form films under mild conditions. The polymerization of furfuryl methacrylate monomer is initiated by a resistively heated filament wire. The functionality of the furan group in the iCVD film enabled Diels–Alder chemistry with 4‐phenyl‐1,2,3‐triazolin‐3,5‐dione (N‐PTD).

     

不同化学镀液中p—Si上激光诱导局部沉积铜

在化学镀铜溶液中，ｐ－Ｓｉ片在波长为５１４．５ｎｍ的激光束的照射下，得到了选择性的铜镀层。采用ＡＥＳ、ＳＥＭ、ＲＢＳ和电学技术对比了在３种含不同还原剂的镀液中得到的镀层的形貌、组成、界面扩散及电学性质，探讨了液相激光诱导化学沉积铜的机理。     

Hollow Cu‐NP Spheres Made from Electroless Cu Deposition with Colloidal Particles as Templates

Summary: Hollow copper nanoparticle (Cu‐NP) spheres with different wall thicknesses were prepared with organic and inorganic colloids as core combining self‐assembly and electroless Cu deposition techniques. The hollow Cu‐NP spheres made from polymeric colloids possessed a thicker wall but were easy to break in the removal of the core by THF, while those from SiO₂ colloids had thinner wall and remained intact in the removal of the core by HF.

TEM image of the hollow Cu‐NP spheres.     

不同化学镀液中p－Si上激光诱导局部沉积铜

在化学镀铜浴液中,p-Si片在彼长为514.5nm的激光束的照射下,得到了选择性的铜镀层。采用AEs、SEM、RBS和电学技术对比了在3种含不同还原剂的镀液中得到的镀层的形貌、组成、界面扩散及电学性质;探讨了液相激光诱导化学沉积铜的机理。     

Nickel Amperometric Detector Prepared by Electroless Deposition for Microchip Electrophoretic Measurement of Alcohols and Sugars

Nickel was deposited directly at the end of an electrophoretic glass microchip using an electroless deposition procedure leading to an attractive amperometric detector for sugars and alcohols. Such direct electroless deposition of nickel at the end of the separation chip greatly simplifies the preparation of on‐chip electrochemical detectors. Variables affecting the preparation and operation of the new detector are characterized and optimized. The integrated capillary electrophoresis‐electrochemical detection microsystem was evaluated for the separation of alcohols and sugars in connection to assays of different beer and wine samples. Linear calibration plots and favorable detection limits are found that meet the needs of real sample (wine and beer) analyses. This represents the first example of using nickel electrode and detecting alcohols on microchip platforms.