Theoretical and experimental study of N(D) formation in nitrogen collisions with a metal surface

The dynamics of nitrogen collisions with metals partially covered by alkali atoms is studied both experimentally and theoretically. Our attention focuses on the formation of N⁻(¹D) metastable ions and their interaction with the surface. We present the electron energy spectra induced by slow collisions of N⁺ ions with partially cesiated Pd(111) surfaces under grazing incidence. These spectra display, as a function of Cs coverage, a sharp feature which is due to the autodetachment of N⁻(2p⁴, ¹D) to the N(2p³, ⁴S) ground state. Our calculations, performed with the coupled angular mode (CAM) method on the basis of the resonant electron exchange between the nitrogen atom in states of the 2p³ configuration and the metal surface, consistently explain how negative ions formed close to the surface can survive against electron loss to the metal during the outgoing trajectory and can later decay as free ions. In order to understand the alkali coverage dependence of the N⁻(¹D)-N(⁴S) peak intensity, the local character of the nitrogen interaction with the surface partially covered by adsorbate atoms has been taken into account.     

TiO_2薄膜的硼掺杂对TiO_2/p~+-Si异质结器件电致发光的增强

利用磁控溅射在重掺硼硅(p+-Si)衬底上分别沉积TiO2薄膜和掺硼的TiO2(Ti O2∶B)薄膜,并经过氧气氛下600℃热处理,由此形成相应的TiO2/p+-Si和TiO2∶B/p+-Si异质结。与Ti O2/p+-Si异质结器件相比,TiO2∶B/p+-Si异质结器件的电致发光有明显的增强。分析认为:TiO2∶B薄膜经过热处理后,B原子进入TiO2晶格的间隙位,引入了额外的氧空位,而氧空位是TiO2/p+-Si异质结器件电致发光的发光中心,所以上述由B掺杂引起的氧空位浓度的增加是TiO2∶B/p+-Si异质结器件电致发光增强的原因。     

GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model

Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p⁺/n (n⁺/p) structure, it is demonstrated here that an optimal base doping N_d(a) = 3 (7)×10¹⁸ cm^-3 is observed, and the superior p⁺/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.     

HYPERON DECAYS IN THE CNIRAL BAG MODEL

In terms of the chiral bag model and SD(3) Skyrme wave-functions of baruons, we investigate Δ⁺ →Pγ (SU(2)) and Σp⁺ → Pπ⁰ (SU(3) case) hyperon decays. We have found that for Δ⁺ →Pγ the Skyrme contribution is more important whereas in Σp⁺ → Pπ⁰ the quark content transition dominates.     

SnO_2/p~+-Si异质结器件的电致发光:利用TiO_2盖层提高发光强度

通过在重掺硼硅(p+-Si)衬底上溅射SnO2薄膜并在O2气氛下800℃热处理形成SnO2/p+-Si异质结.基于该异质结的器件可在低电压(电流)驱动下电致发光.进一步地,通过在SnO2薄膜上增加TiO2盖层,使器件的电致发光获得显著增强.这是由于TiO2盖层的引入,一方面使SnO2薄膜更加致密,减少了非辐射复合中心;另一方面TiO2较大的折射率和合适的厚度使SnO2薄膜电致发光的出光效率得到提高.     

电极布局对硅LED性能的影响

采用0.35μm双栅标准CMOS工艺设计和制备了叶型硅发光器件.叶型硅发光器件由3个楔型器件的组合而成,pn结结构为n阱/p+结.使用奥林巴斯IC显微镜测得了器件的显微图形,并对器件进行了电学特性测试.器件工作在雪崩击穿下,开启电压为8.8 V,能够发出黄色可见光;正向偏置下,器件开启电压为0.8 V.在与已经制备的楔...     

Pressure-broadened atomic Li(2s-2p) line perturbed by ground neon atoms in the spectral wings and core

Full quantum calculations are performed to investigate the broadening profiles of the atomic lithium Li(2s-2p) resonance line induced by interactions with ground Ne(2s~22p~6) perturbers in the spectral wings and core. The X~2Σ~+, A~2Π,and B~2Σ~+ potential-energy curves of the two first low lying Li Ne molecular states, as well as the corresponding transition dipole moments, are determined with ab initio methods based on the SA-CASSCF-MRCI calculations. The emission and absorption coefficients in the wavelength range 550-800 nm and the line-core width and shift are investigated theoretically for temperatures ranging from 130 K to 3000 K. Their temperature dependence is analyzed, and the obtained results are compared with the previous experimental measurements and theoretical works.     

Effect of oxygen implantation on ionoluminescence of porous silicon

We report on ionoluminescence investigations of porous Si prepared from the p⁺-type Si, which exhibited, after prolonged ambient air exposure, moderate photon emission with a maximum in the red–orange region. In an attempt to activate a shorter wavelength emission, the samples were implanted with 225 keV O⁺ ions at the dose of 1×10¹⁷ cm⁻². The strong blue band at 2.7 eV, well known in silica, has emerged in the ionoluminescence spectra following the oxygen implantation. The results of the comparative ionoluminescence experiments, performed on both porous Si and two forms of silica, show the important role of SiO₂ defect-related states in ion-induced optical emission from porous Si.     

Observation of fine structure in the 1s2s2p P-1s2p S transition of core-excited O V

We have measured the absolute wavelengths of the fine structure components of the 1s2s2p^{2 5}P-1s2p^{3 5}S transition in beryllium-like oxygen using the method of fast ion spectroscopy. These results represent the first measurement of fine structure in any core-excited 4-electron ion. We have also measured the lifetime of the metastable 1s2p^{3 5}S state. The structure and lifetime results are compared with recent relativistic MCHF calculations.     

低速Xe~(q+)(4≤q≤20)离子与Ni表面碰撞中的光辐射

实验中测量了0.38V_(Bohr)(460 keV)高电荷态Xe~(q+)(4≤q≤20)离子轰击高纯Ni表面发射的400-510 nm光谱.实验结果包括NiⅠ原子谱线,NiⅡ离子谱线,以及入射离子中性化发射的XeⅠ,XeⅡ和XeⅢ谱线.研究了谱线XeⅡ410.419,XeⅢ430.444,XeⅡ434.200,XeⅡ486.254,NiⅠ498.245,NiⅠ501.697,NiⅠ503.502,NiⅠ505.061和NiⅠ508.293 nm的光子产额随着入射离子电荷态的变化.结果表明,入射离子中性化和溅射Ni原子发射谱线的光子产额随着入射离子电荷态的增加而增加,其趋势与入射离子势能一致.     

Rh XⅢ—Cd XVI离子4s24p3—4s4p4能级与跃迁的理论计算

用HFR（Hartree-Fock with relativistic corrections）方法对Rb V—Cd XVI离子4s²4p³和4s4p⁴组态能级结构做了全面系统的理论计算研究. 通过分析能级结构参数的HFR理论计算值与基于实验能级拟合得到的计算值之比值随着原子序数Z_c变化的规律,运用广义拟合外推方法预言了这些离子能级结构参数. 由此进一步计算了Rh XⅢ,Pd XIV,Ag XV和Cd XVI离子4s²4p³（⁴S_3/2,²P_1/2,3/2,²D_3/2,5/2）和4s4p⁴（⁴P_1/2,3/2,5/2,²P_1/2,3/2,²D_3/2,5/2,²S_1/2）组态能级以及电偶极跃迁波长与振子强度. 研究表明,对于4s²4p³组态,单组态近似可以得到较满意的结果;而对于4s4p⁴组态,只有在考虑了4s²4p²4d的组态相互作用效应时,计算结果的准确性才能明显得到提高. 同时,本文还运用全相对论grasp2K-DEV程序包计算了Rh XⅢ—Cd XVI离子组态能级. 对于Rh XⅢ离子4s²4p³（²P_1/2）,Pd XIV离子4s²4p³（⁴S_3/2,²P_1/2,3/2,²D_3/2,5/2）和4s4p⁴（²P_1/2,3/2,²D_3/2,5/2,²S_1/2）,能级均无实验值;对于Ag XV和Cd XVI离子,截至目前还没实验能级数据,没有实验能级值的所有数据均仅来自本文的计算数值. 本文计算结果与已有实验值吻合得很好.     

顶发射绿光量子点电致发光器件

采用核壳结构的绿光CdSSe/ZnS量子点成功制备了顶发射绿光量子点器件,并详细研究了它的光电特性。与具有相同结构的底发射器件相比,顶发射器件在亮度、效率、色纯度、光谱的电压稳定性上都得到了显著提高。在相同电压7 V下,尽管底发射具有更大的电流密度,但亮度仅为831 cd/m²,而顶发射器件的亮度则可达到1 350 cd/m²,并且顶发射器件的最高亮度可达到7 112 cd/m²。在效率上,顶发射器件的最大电流效率可达6.54 cd/A,远大于底发射器件的1.89 cd/A。在光谱方面,在底发射器件中出现的红蓝部分的杂光在顶发射器件中完全被抑制,而且顶发射光谱的半高宽显著窄化,具有更高的色纯度。当电压从4 V变化到9 V时,顶发射器件光谱始终保持稳定,色坐标移动仅为（-0.005,-0.001）。结果表明,顶发射结构有利于提高量子点器件的亮度、效率、色纯度以及光谱的电压稳定性。     

Theoretical Electronic Structure of Oxide BaBiO3

In this paper, we present a model simulation to understand the electronic structure of BaBiO₃. By treating two types of Bi sites with different valence configurations (6s² 6p³ 6d⁰ and 7s⁰6p³6d⁰),t he valence instability in BaBiO₃ is simulated. We shorv that an LMTO-ASA calculation can then give a semiconducting feature for this material and a good estimation of the gap, which is 1.6 eV from the present model compared with 2.0 eV from experiments. The existence of Bi³⁺ sites reduces greatly the overlapping integrals between Bi_6s-O_2p states and reduces correspondingly their band widths. The band gap appears because the antibonding bands of Bi_6s-O_2p now separate from the rest bands of Bi-O_2p.     

A Modified Approach for Calculating Dressed Quark Propagator at Finite Chemical Potential

Based on the rainbow approximation of Dyson-Schwinger equation and the assumption that the full inverse quark propagator at finite chemical potential is analytic in the neighborhood of μ = 1, it is proved that the dressed quark propagator at finite chemical potential μ can be written as G0^-1 [μ] =iγ·p↑-A（p↑-^2） ＋B（p↑-^2） with p↑-μ= （p↑-p4 ＋iμ）. From the dressed quark propagator at finite chemical potential in Munczek model the bag constant of a baryon and the scalar quark condensate are evaluated. A comparison with previous results is given.     

Dirac R-matrix calculations of photoionization cross sections of Ni XII and atomic structure data of Ni XIII

We performed R-matrix calculations for photoionization cross sections of the two ground state configuration 3s²3p⁵ (²P^o_3/2,1/2) levels and 12 excited states of Ni XII using relativistic Dirac Atomic R-matrix Codes (DARC) across the photon energy range between the ionizations thresholds of the corresponding states and well above the thresholds of the last level of the Ni XIII target ion. Generally, a good agreement is obtained between our results and the earlier theoretical photoionization cross sections. Moreover, we have used two independent fully relativistic GRASP and FAC codes to calculate fine-structure energy levels, wavelengths, oscillator strengths, transitions rates among the lowest 48 levels belonging to the configuration (3s²3p⁴, 3s3p⁵, 3p⁶, 3s²3p³3d) in Ni XIII. Additionally, radiative lifetimes of all the excited states of Ni XIII are presented. Our results of the atomic structure of Ni XIII show good agreement with other theoretical and experimental results available in the literature. A good agreement is found between our calculated lifetimes and the experimental ones. Our present results are useful for plasma diagnostic of fusion and astrophysical plasmas.     

Ellipsometric study of refractive index anisotropy in porous silicon

Porous Si layers of different thicknesses were prepared by anodising p⁺-type Si substrates with a resistivity of 0.01 Ω cm. The porosity of the samples ranged from 23% to 62%. The refractive index values for the ordinary and extraordinary rays were determined by multiple angle of incidence ellipsometry, from which an optical anisotropy parameter varying from 13% to 20% was obtained. The porous Si layers were modelled as uniaxially anisotropic films on an isotropic substrate, with an optical axis perpendicular to the sample surface. The morphological anisotropy which is typical for the p⁺-type porous Si with a predominating cylindrical geometry is responsible for these optical properties. All the porous Si layers studied were found to be optically negative.     

微波场作用下La2O2S：Eu荧光粉的快速合成及其发光特性

采用微波法快速合成了La₂O₂S:Eu红色荧光粉,用X射线粉末衍射(XRD)、扫描电镜(SEM)、荧光光谱等对合成产物进行了分析和表征。结果表明:材料的晶体结构为六方晶系,与纯La₂O₂S的结构相同。颗粒的形状不规则,分散性较好,尺寸在2μm左右。La₂O₂S:Eu的激发光谱主要是位于200~450nm范围内的宽带,此宽带激发来源于Eu³⁺的电荷转移态的吸收跃迁。在472nm左右出现一弱的尖锐的吸收峰,属于Eu³⁺的4f→4f跃迁吸收。发射光谱是由512,539,556,583,596,617,627nm的一系列窄带发射峰组成。这些发射峰归属于Eu³⁺从⁵D_J(J=0,1,2)到⁷F_J(J=0,1,2,3,4)的能级跃迁。随着Eu摩尔分数从2%增加到10%,主激发峰从348nm移动到365nm,移动了17nm;位于蓝绿区的发射峰逐渐减弱,627nm处的红光发射明显增强,当Eu的摩尔分数为8%时发光强度达到最大,继续增加Eu的浓度发光强度反而降低。     

Dielectrics for passivation of planar InP/InGaAs diodes

We have investigated dielectrics for passivating planar InP or InGaAs photodiodes: thermally evaporated Al₂O₃ and SiO, sputtered Si₃N₄ and SiO₂ and also SiO₂ using chemical vapour deposition. The measured bulk and field-effect properties of all dielectrics excluding sputtered SiO₂ were suitable for this application. In planar InGaAs diodes with Cd diffused or Mg implanted p⁺-region a disordered dielectric/semiconductor surface led to high reverse current densities above 1 mA/cm². In InP diodes with p⁺-diffusion and dielectrics exhibiting positive flatband voltages, e.g. Si₃N₄ and Al₂O₃, reverse current densities of 10 μA/cm² were measured probably caused by a slight inversion of the semiconductor surface. With a SiO or CVD-SiO₂ passivating layer on n-InP lowest leakage current densities (10 nA/cm²) were achieved. Very low dark-current planar photodiodes InP/InGaAsP/InGaAs have been fabricated using SiO passivation (30 nA/cm²).     

Time-resolved photoluminescence study of AgCl:Cd solid state nuclear track detectors

Crystalline AgCl:Cd²⁺ thin foils (Cd²⁺ concentration 62.5 – 5000 ppm) were studied by time-resolved photoluminescence spectroscopy in temperature range 20 – 80K using a mechanical phoroscope. Simple method is presented how to use the photoluminescence behaviour to check suitability of AgCl:Cd²⁺ foils to record high-energy particles tracks.     

基于间接跃迁模型的p+-GaAsSb费米能级研究

重p型掺杂GaAsSb广泛应用于InP HBT基区材料,重掺杂影响GaAsSb材料的带隙和费米能级等重要参数,这些参数对设计高性能HBT起着关键作用。本文通过间接跃迁模型研究了p⁺-GaAsSb材料的荧光性质,以及费米能级与Sb组分的关系。由于费米能级与空穴有效质量m_h和空穴态密度n_h存在函数关系,我们通过荧光测量并计算了空穴有效质量m_h和空穴态密度n_h,研究结果表明m_h和n_h共同主导了费米能级的变化。