Experimental analysis of the effects of orientation and location of the Pockels cell in an Nd:YAG laser resonator

We report an experimental study on the effects of the orientation and location of a Pockels cell used as electro-optic Q-switch in a laser resonator. Out of the four resonator configurations studied, it was found that in two resonator configurations a high cavity-Q value of the resonator was maintained in Q-switched operation, irrespective of the orientation of the crystallographic axis of the Pockels cell with respect to the incident plane of polarization. Further, analysis of the polarization state of the output in one of the configurations showed that it is always linearly polarized in the plane of the pass axis of the intra-cavity polarizer. In the other configuration it was observed that, as the Pockels cell was rotated, the plane of the linearly polarized output light was rotated correspondingly. For all of the resonator configurations, our experimental results are in good agreement with a Jones matrix analysis     

Q-switch rise time effect in flash-pumped solid state lasers

The effect of the rise time of the Pockels cell on the output laser pulse is investigated. The pump system in a flash pumped Nd:YAG laser with unstable resonator is numerically analyzed and simulated. The time dependent flash discharge current is calculated and the optical time-dependent variation of the flash pulse is deduced. The numerical simulation of the whole laser gives the solution of the system of four level Nd:YAG differential rate equations. The pump power is considered variable and dependent on the flash pump pulse shape and power. The Q-switch rise time is included in the rate equations as a variable time dependant loss parameter. The laser pulse shape and output characteristics are calculated. Numerical and some experimental results are presented and discussed.     

平板型阶跃式变阻抗线特性

介绍了变阻抗线的工作原理,给出了类Blumlein线结构变阻抗线的倍压特性,变阻抗线能够实现能量的完全传输,输出电压为输入电压的(n+1)/2倍;以平板结构为例研究了变阻抗线中的阻抗偏差问题:传输线实际阻抗较理论设计值偏大,各级的偏差基本在20%以内;通过电磁仿真研究了三级类Blumlein线结构变阻抗线中各级阻抗偏差对于倍压系数的影响,在阻抗偏差范围内,倍压系数随着阻抗的增大而减小,倍压系数在1.9~2.1范围内,给出倍压系数受各级阻抗偏差的影响规律;设计了三级类Blumlein线结构平板传输线进行实验,输出电压为3833 V,与理论设计相符。     

铁电薄膜可调带通滤波器

铁电薄膜的介电常数随外加电场强度的增加而减小.依据铁电薄膜的这一特性,提出了一种新颖的基于共面传输线结构的铁电薄膜可调带通滤波器.为了减小传输损耗,滤波器的导体部分由超导薄膜构成.滤波器的输入输出采用抽头线的方式分别与谐振器相接,外加电压通过输入输出端口直接施加到共面谐振器缝隙处的铁电薄膜上,用以改变铁电薄膜的介电常数,从而改变谐振器的谐振频率,实现带通滤波器通带频率的移动.这种新型可调带通滤波器具有结构紧凑、尺寸小及施加外加偏压容易等优点.仿真结果表明:铁电薄膜的介电常数在外加偏压下从250减小到150时,带通滤波器的传输特性曲线的形状基本保持不变,通带的中心频率从10.283GHz增加到10.518GHz,其3dB带宽保持在0.150GHz左右,反射损耗始终小于-17dB.     

High peak power Nd:YAG laser pumped by 600-W diode laser stack

The Q-switched laser with triangle slab made of Nd:YAG crystal side pumped by 600-W quasi-cw diode laser stack has been designed. The multimode (M²≈2.6) output energy of about 42 mJ was demonstrated in free running mode for110-mJ pump energy. In Q-switch experiments, the KDDP Pockels cell was placed between the slab and rear mirror in plane-plane cavity with output coupler of 84% transmission. The energy of 8 mJ in 2.1-ns pulse duration was obtained for near TEM₀₀ output beam. For passive Q-switching by means of Cr:YAG crystal of 12.6% unsaturated transmission, the energy of 5.1 mJ in 2.5-ns pulse duration was obtained for output beam close to TEM₀₀ mode.     

A type of electro-optic Q-switch designed by using optically active crystal

A type of electro-optic Q-switch is designed by using optically active crystal La₃Ga₅SiO₁₄ (abbreviated as LGS), in which the polarization plane gyration and electro-optic effect exist simultaneously. The configuration of the Q-switch is based on the consideration that the total rotation angle of the polarization plane of the polarized laser is zero, while the laser in the cavity propagates through the Pockels cell back and forth. The Q-switch placed in a Nd^{3 +}:YAG laser behaves normally, like those without optical activity. Compared with the DKDP Q-switch, the LGS Q-switch has more superiorities, which make it a suitable replacement for the DKDP Q-switch in lasers with medium-output energy.     

Study on Square Wave Pulsewidth-variable Solid State Laser

Based on the rate equation of laser oscillation, we study the possibility of square wave output of a solid state laser in temporal domain. By means of the smooth cavity dumping, the reduction of output loss compensates the photon decrease in cavity. In experiment, we use two sets of avalanche transistor chains to control the functional voltage applied on the Pockels cell for getting uniform and pulsewidth-variable square wave laser pulse.     

Study on Square Wave Pulsewidth-variable Solid State Laser

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利用石英晶体的线性电光和电致旋光强度调制

提出并实验研究了利用石英晶体自身特性产生光学偏置的线性电光调制器。利用某些电光晶体的自然旋光性和自然双折射,并合理设计晶体尺寸及其晶轴与光传播方向之间的夹角,可以提供所需要的光学偏置以实现大动态范围的线性电光调制。对于兼有电光和电致旋光效应的晶体,例如石英晶体,应考虑综合利用这两种效应对电光调制的贡献。实验研究了一块石英晶体的电光强度调制特性,在27V～4.5kV工频调制电压范围内,调制输出信号与调制电压之间的线性相关系数大于0.9999。     

Short single-mode CO2 laser pulse generation by pulsed Q-switching

A simple method for the generation of short, single-mode CO₂ laser pulses produced by applying two voltage gates (of amplitude 3U_λ/4 and U_λ/4) to an electro-optic Q-switch placed in a three-mirror cavity is proposed. Single, single-mode, well-synchronizable pulses of 3 ns duration and of 3 mJ energy have been experimentally achieved from a TEA CO₂ laser with an intracavity Pockels cell with 3 ns switching time. Using a numerical simulation it is shown that with shorter switching time (≈1 ns) the method enables one to obtain, from such a laser, a single, megawatt pulse of 1 ns duration.     

Electron energy loss spectroscopy of ultrathin pentacene field effect transistors

Electron energy loss spectra of ultrathin pentacene field effect transistors were measured by applying gate bias voltages. Tailing and shouldering of the primary peak on the energy loss side was observed for 1.5 nm thick films when a negative gate bias was applied. The energy loss spectra obtained from the deconvolution of the primary electron profile showed peaks, and the peak energies increased as a function of the gate bias voltage. This is consistent with the behavior of two-dimensional plasmons of field-induced carriers. The thickness dependence is explained by the thickness of the accumulation layer and the probing depth of the spectroscopy.     

LaMgAl11O19:Co2+被动调Q铒玻璃激光器研究

综述了被动调Q铒玻璃激光器的发展概况,推导了被动调Q铒玻璃激光器输出脉冲能量、脉宽的解析表达式,数值模拟了腔内损耗与输出脉冲能量、脉宽及峰值功率的关系以及输出脉冲能量与输入抽运能量的关系.设计了一台LaMgAl11O19:Co2 被动调Q铒玻璃激光器,实验验证了数值模拟分析结果.结果表明,腔内损耗增加将导致输出脉冲能量下降,脉宽变大,从而峰值功率降低.输入能量低于12 J时,输出只有单脉冲,当输入能量大于12 J时,输出会出现双脉冲.在8 J的电输入下,获得了峰值功率50 kW,2.7 mJ的1.535 tm激光输出.最后讨论了提高单脉冲能量的方法.     

高压快速离化半导体开关及其脉冲压缩特性

 介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构,实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性,并对实验研究结果进行分析。在50 Ω负载下,将一输入脉冲幅度1.7 kV 、脉宽4 μs、重频2 kHz高压脉冲,通过FID压缩成脉冲幅度1 985 V、脉宽90 ns、重频2 kHz的高压脉冲。     

新型电光陶瓷调Q光纤激光器

报道了基于OptoCeramic(R)电光陶瓷材料的新型调Q光纤激光器.采用976 nm半导体激光器作为抽运源,电光陶瓷调制器作为Q开关,峰值吸收系数1200 Db/m的高掺杂镱纤作为增益介质构成环形腔激光器.增益光纤的高掺杂浓度使得激光器的腔长得到缩短,输出光脉冲的宽度得到压缩.通过调节电光元件的电压,控制材料的折射率,调节谐振腔的损耗,实现Q开关作用.实验中通过改变腔长、抽运功率和重复频率,研究了脉冲的输出特性.获得最窄脉宽104 ns,重复频率3～40 kHz连续可调的调Q脉冲输出.     

Generation of arbitrary waveforms with electro-optic pulse-shapers for high energy—multimode lasers

Precisely controlled pulse-shaping operation with large-aperture high-energy laser beams may imply numerous limitations when some minimal flexibility together with high optical performance are required. This paper presents an original electro-optical concept for the production of very high dynamic range arbitrary-waveforms with high temporal resolution, using laser–diode coupled photo-conductive bars coupled onto large coplanar micro-strip lines. This concept simply involves a short-impulse high-voltage generator at the input and a standard Pockels cell at the output. A number of prototypes have been tested on large-aperture fast Pockels cells for the validation of both electrical and optical performance. Such pulse-shapers may find specific applications in the field of optical smoothing related to fusion lasers and other areas, i.e. whenever one needs to provide computer-controlled, low- or high-voltage, pulses with any pre-defined arbitrary waveform. Apart from the coupling application to a Pockels cell, this concept is fully scalable for higher electrical energies and higher voltages.     

An Innovative Multiple-layer Electro-optical Q-switch

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Investigation on the electric-field-induced Pockels effect and optical rectification in near-intrinsic silicon samples

Based on the classical polarization theory, we studied and specified the physical mechanism of the electric-field-induced (EFI) Pockels effect and optical rectification in the space charge region of a near-intrinsic silicon sample with the planar capacitor structure. Especially, the effect of the applied DC bias on these EFI effects was investigated. The results show that the electro-optic signal from Pockels effect in silicon linearly increases with the applied DC voltage and the modulating voltage, and the signal of optical rectification is linearly enhanced by the DC bias as well, but the polarization characteristic of optical rectification does not vary. The enhancement of these EFI effects is mainly owed to the strengthening of the built-in field and the extension of the space charge region in the silicon sample. The Kerr effect of silicon was also detected and contrasted against the EFI Pockels effect, and it is verified that the EFI Pockels effect is much stronger than the Kerr effect in the silicon sample. These EFI effects are significant for the development of silicon photonics or silicon optoelectronics.     

热光伏能量转换器件的热力学极限与优化性能预测

受不可逆损失的影响,热光伏能量转换器件在高品位热能回收与利用方面受到限制.本文揭示不可逆损失来源,提供热光伏能量转换器件性能提升方案.利用半导体物理和普朗克热辐射理论,确定热光伏能量转换器件在理想条件下的最大效率.进而考虑Auger与Shockley-Reed-Hall非辐射复合和不可逆传热损失对光伏电池的电学、光学和热学特性的影响,预测热光伏器件优化性能.确定功率密度、效率和光子截止能量的优化区间.结果表明:相比于理想热光伏器件,非理想热光伏器件的开路电压、短路电流密度和效率有所降低;优化热光伏电池电压、光子截止能量和热源温度,可提升器件的功率密度和效率.通过对比发现理论与实验结果较一致,所得结果可为实际热光伏能量转换器件的研制提供理论指导.     

Stable Q-switch mode-locking of Nd:YVO<Subscript>4</Subscript> lasers with a semiconductor saturable absorber

This paper reports on a passively mode-locked and Q-switched Nd:YVO₄ laser generating picosecond pulses with an average output power exceeding 7 W. In a first step Q-switch mode-locking was obtained by self Q-switching of a mode-locked oscillator with appropriate cavity design, pump power and output coupling. In a second system the Q-switching was actively controlled and stabilized by modulating the resonator internal losses with an acousto-optic modulator. In the Q-switch mode-locking operation the laser provided 12.8 ps long mode-locked pulses with a repetition rate of 80 MHz. The repetition rate of the Q-switch envelope was 185 kHz. The maximum pulse energy of a single ps pulse was 0.55 μJ which is 5.5 times the pulse energy measured for cw mode locking. The total energy of the pulses within the Q-switch envelope was 42 μJ. PACS  42.55.Xi; 42.60.Fc; 42.60.Gd     

凝胶基质高效可调谐固态染料激光器

采用溶胶－凝胶工艺制成激光染料掺杂有机改性凝胶玻璃。用室温下调ＱＮｄ：ＹＡＧ激光器倍频光泵浦凝 胶基,成功地获得了高转换效率,长寿命,可调谐固态染料激光器的激光输出。其中ＳｉＯ２－Ｏｒｍｏｓｉｌ基质Ｐｙｒｒｏｍｅｔｈｅｎｅ５９７染料激光器,激光输出阈值低于１０μＪ,斜率效率η＝６１％,５５０－５９４ｎｍ波长范围内连续可调谐,激光输出能量下降１０％所承受的激光脉冲数大于２．５＊１０＾４个（激光泵浦频