Rear-surface light intensification caused by Hertzian-conical crack in 355-nm silica optics

Theoretical studies show that the Hertzian-conical crack can be considered to be composed of double cone faces for simplification. In the present study, the three-dimensional finite-difference time-domain method is employed to quantify the electric-field distribution within the subsurface in the presence of such a defect under the normal incidence irradiation. Both impurities (inside the crack) and the chemical etching have been investigated. The results show that the maximum electric field amplitude |E| _max is 9.57374 V/m when the relative dielectric constant of transparent impurity equals 8.5. And the near-field modulation will be improved if the crack filled with remainder polishing powders or water vapor/drops. Meanwhile, the laser-induced initial damage is moving to the glass-air surface. In the etched section, the magnitude of intensification is strongly dependent on the inclination angle θ. There will be a highest modulation when θ is around π /6, and the maximum value of |E| _max is 18.57314 V/m. When θ ranges from π /8 to π /4, the light intensity enhancement factor can easily be larger than 100, and the modulation follows a decreasing trend. On the other hand, the modulation curves become smooth when θ > π /4 or θ < π /8.     

Accelerating Effect in Kerr-Newman-Kasuya Field

We have obtained expressions of the accelerating effect in Kerr-Newman Kasuya field. These expressionsinclude four parameters: mass m, angular momentum a, electric charge q, and magnetic charge φ. Furthermore we studyits special case (vi = 0). We get the following conclusion. In the gravitation field of souse mass with electric charge qand magnetic charge b, the acceleration of test particle has not only radial component but also transverse component.When θ = 0, the acceleration is minimum, and when θ = π/2, the acceleration is maximum. Furthermore, we discussthe effects of electric charge q and magnetic charge φ respectively.     

形状与位置对断点划痕场分布的影响研究

用3维时域有限差分方法分别研究了在355 nm入射激光作用下, 熔石英后表面具有不同形状 和位置的断点划痕对场分布的影响.研究表明,对于椭圆状的坑点, 当共线的轴长逐渐 增大时, 电场幅值与强点数目先增大后减小, 获得最大光强增强因子的两轴 比是1.1-1.2, 此时坑点呈近圆形. 当平行的轴长逐步增大时,电场幅值先逐渐增大, 当两轴比为0.53时趋于平缓, 而强点总数则呈"J"形曲线不断增长. 当坑点尺寸相同 但排放位置不同时, 相邻坑点的相对面积愈大, 调制愈强.     

在有限温度下运用弱测量保护量子纠缠

根据单量子比特的映射, 提出一个在有限温度下运用弱测量保护两量子比特纠缠的方案. 在两个可通过局域幺正变化实现的等价的初始纠缠进入广义振幅阻尼信道前后, 对其分别进行弱测量, 并对四个弱测量的参数做全面的优化, 获取最大共生纠缠C_r 和弱测量参数m, n的解析表达式, 然后再进一步研究弱测量参数与信道参数的关系. 发现这种基于弱测量的纠缠保护方法在某些情况下可以有效地提高纠缠, 甚至可以避免纠缠的突然死亡. 当信道参数r一定时, 对不同的参数p,初始态|ψ>纠缠达到最大值时对应的弱测量参数m的取值一样, 共生纠缠关于p=0.5对称, 而初始态|φ>对应的参数m的取值不同; 在参数p一定、参数r不同、初始态|ψ>或|φ>的情况下, 当纠缠度取最大值时, 弱测量参数m的取值不变, 且随着r的增加, 纠缠度减少. 通过对信道参数的分析, 发现可以选择合适的信道参数和初始态来获得较大的纠缠.     

裂纹或气泡对熔石英损伤修复坑场调制的近场模拟

建立了含有裂纹或气泡的高斯型修复坑的3维模型, 用3维时域有限差分方法研究了熔石英后表面该类缺陷对355 nm入射激光的近场调制. 研究表明, 裂纹的调制明显大于气泡或者高斯坑本身, 因此为了抑制修复元件的初始损伤, 应尽量避免任何未修复的裂纹存在, 尤其是与入射光呈夹角约25°的裂纹, 同时应避免尺寸大于5 λ 的气泡存在. 当裂纹或气泡位于近表面层3 λ 以内且靠近修复坑环边缘时, 对场的调制最明显. 随着侧移的增加, 近表面区缺陷诱导场叠加, 强点总数涨落较大且易形成极大峰值, 特别是含有裂纹的情形; 远表面区强点总数逐渐增大并趋于稳定. 随着嵌深的增加, 强点的数目大体呈减弱趋势, 当嵌深大于3 λ 时, 逐渐趋于平缓振荡. 如果裂纹或气泡位于坑点正下方几个波长内, 激光辐照下其效果相当于延长了高斯坑的深度.     

利用多光子跃迁控制基态HF分子布居转移

采用波包动力学方法研究了HF分子基电子态的多光子跃迁. 激光场由两束频率比为1:2的重合红外脉冲构成. 态|0,0>作为初始态, 态|4,0>与态|4,2>分别作为目标态. 计算结果表明, 通过选取不同的共振频率, 可以控制布居跃迁至不同的目标态. 两束脉冲间的初相位差可以控制布居转移概率. 当初相位差为π/2的偶数倍时, 布居转移概率为最大值. 当初相位差为π/2的奇数倍时, 布居转移概率为最小值. 初相位差对于态|4,0>的布居影响大于态|4,2>. 关键词： 多光子跃迁 初相位 布居转移 波包     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

Photon Generation Scheme of 32-Fold Millimeter-Wave Signal Based on Mach-Zehnder Modulator

This paper proposes a 32-tupling frequency millimeter-wave (MMW) filter-free system based on four Mach-Zehnder Modulators (MZM) connected in parallel and cascaded with a simple radio-fiber (RoF) link structure. The four MZMs are all at the maximum transmission point (MATP), and the radio frequency (RF) driving voltage phase difference between MZMs is π /2. The center carrier is suppressed by using an optical attenuator (OATT) and an optical phase shifter (OPS). Two parallel MZMs can generate ±8th order and ±12th order optical sidebands, and the ±4th order optical sidebands can be suppressed by adjusting the modulation index m of the MZM, using cascaded two dual-parallel MZMS(DPMZM) and the phase difference of the RF signal source is π/4 to generate ±16th order optical sidebands. The theoretical analysis and simulation experiments are performed for the scheme proposed in this paper. The results show that the simulated and theoretical values of the optical sideband suppression ratio (OSSR) for ±16th order optical sideband signals are 60.02 and 59.96 dB, respectively, and the simulated and theoretical values of the RF sideband suppression ratio (RFSSR) for the 32-tupling MMW signal are 56.34 and 53.94 dB, respectively.     

多个硅通孔引起的热应力对迁移率和阻止区的影响

本文主要讨论了多个硅通孔引起的热应力对迁移率和阻止区的影响, 得到了器件沟道沿[100]方向时, 硅通孔之间的角度和间距对电子迁移率和阻止区的影响. 设定两种阻止区区域, 即迁移率变化分别为5%和10%的区域, 且主要考虑相邻TSV之间的区域. 仿真结果表明: 当硅通孔和X轴所成角度为π/4时, 电子迁移率变化和阻止区区域最小, 但是可布置器件区域不规则, 不易于布局. 随着间距的增加, 电子迁移率变化和阻止区区域逐渐增大, 趋向于单个TSV的情况; 当角度为0 时, 电子迁移率变化和阻止区区域变大, 可布置器件区域为硅通孔围成的中心小区域上, 形状比较规则, 便于布局. 而且随着间距的增加, 电子迁移率变化和阻止区区域越来越小, 趋向于单个硅通孔的情况.     

非均匀磁场和杂质磁场对自旋1系统量子关联的影响

通过负值度和测量诱导的扰动, 研究了非均匀磁场和杂质磁场对自旋为1的Heisenberg系统量子关联的影响. 研究发现非均匀磁场的增加会降低纠缠, 但也可用来产生纠缠, 并且会提高临界非线性作用K_c的值, 测量诱导的扰动的临界磁场要高于负值度的临界磁场, 而且测量诱导的扰动不会随着非线性作用|K| 的减小而消失, 它能全面反映量子关联的存在. 研究还发现, 不同杂质磁场对测量诱导的扰动的影响彼此间无交叉. 杂质磁场下, 相互作用|J| 必须小于非线性作用|K| 才会有纠缠存在, 但是测量诱导的扰动却可以在相互作用|J| 大于非线性作用|K| 时依然存在, |J| 与|K| 相同时只是测量诱导的扰动的最小取值点. 此外, 系统粒子数目对量子关联也具有重要影响.     

The electric field modulation by three-dimensional crack on fused silica subsurface

The main factor of laser-induced damage is the modulation to electromagnetic field of laser by the crack on the subsurface. In this paper, a three-dimensional crack model on the exit surface is presented. Three-dimensional finite-difference time-domain (FDTD) method is employed to simulate the electric field intensity distribution in the vicinity of crack on fused silica subsurface. The roles of the crack width, depth, length and the gradient angle in the modulation to the incident light field are analyzed in detail. Results show that the crack size plays an important role in the electric modulation. With the increasing depth and width, the peak value of maximal electric field intensity appears in fused silica. However, the maximal electric field intensity tends to be a constant when the crack length reaches 1 μm. Besides, the enhancement of light intensity becomes obvious when total internal reflection occurs in fused silica. Our calculated results provide an advisable theoretical criterion to the corresponding experiment.     

Experimental investigation of current modulation in a planar Cs-Batacitron

The Cs-Ba tacitron is being considered as a switch, or as an inverter consisting of two switches operating in a push-pull mode, for power conditioning of low voltage/high current dc power sources operating in high radiation/high temperature environment, beyond the limits of semiconductor switches. This paper presents new experimental results delineating the effect of the various operating parameters on the grid potential needed for ignition, V_g⁺, and extinguishing, V_g^-, during stable current modulation of a planar Cs-Ba tacitron. Parameters investigated are Cs pressure, emitter temperature, T_E, discharge current, I_C , and modulation frequency, f_g. The value of V_g ⁺, which is independent of T_E, decreases as Cs pressure increases, but increases as either I_C or f_g increases. Increasing the emitter temperature from 1100-1200°C only slightly decreases the forward voltage drop in the device by ~0.2 V. The value of |V_g^-| increases with Cs pressure, decreases with increased T_E, and is sensitive to changes in fg. At I_C=5 A, the value of |V_g ^-| for stable modulation shows a maximum between 8 kHz and 10 kHz. The Cs pressure, I_C, fg, and V_g⁺ all affect the ignition delay time; depending on the operating conditions, it increases from 5-30 μs to an equilibrium value of 10-45 μs during the first 2 ms in the pulse train     

Relations between neutrino and charged fermion masses

We find an intriguing relation between neutrino and charged fermion masses, |m(ν?)2 -m(ν?)2|:(m(ν?)2-m(ν?)2)::V(tb)?m(τ)2m(b)2/m(t)2:V(cs)?m(μ)2m(s)2/m(c)2. We further indicate this relation can be predicted by a left-right symmetric model.     

Concentrated dual-salt electrolytes for improving the cycling stability of lithium metal anodes

Lithium(Li) metal is an ideal anode material for rechargeable Li batteries, due to its high theoretical specific capacity(3860 mAh/g), low density(0.534 g/cm~3), and low negative electrochemical potential(-3.040 V vs. standard hydrogen electrode). In this work, the concentrated electrolytes with dual salts, composed of Li[N(SO_2F)_2](Li FSI) and Li[N(SO_2CF_3)_2](Li TFSI) were studied. In this dual-salt system, the capacity retention can even be maintained at 95.7%after 100 cycles in Li|Li FePO_4 cells. A Li|Li cell can be cycled at 0.5 mA/cm~2 for more than 600 h, and a Li|Cu cell can be cycled at 0.5 m A/cm~2 for more than 200 cycles with a high average Coulombi efficiency of 99%. These results show that the concentrated dual-salt electrolytes exhibit superior electrochemical performance and would be a promising candidate for application in rechargeable Li batteries.     

基于高光谱特征与人工神经网络模型对土壤含水量估算

土壤含水量(θ)是影响作物生长和作物产量的主要因素之一。旨在评估基于光谱特征参数的各种回归模型估算土壤含水量的精度,并比较人工神经网络(BP-ANN)和光谱特征参数模型的性能。2014年在室内获取砂土和壤土的土壤含水量和光谱反射率数据。结果表明：(1)当砂土容重为1.40 g·cm-3时,900～970 nm最大反射率和900～970 nm反射率总和估算θ达到极显著水平(R2超过0.90);容重为1.50 g·cm-3时,用蓝边最大反射率和900～970 nm反射率总和估算θ相关性最好(超过0.70);容重为1.60 g·cm-3时,780～970 nm反射率总和与560～760 nm归一化吸收深度的R2均超过0.90,达到极显著水平;容重为1.70 g·cm-3时,900～970 nm最大反射率和900～970 nm反射率总和的R2为0.88,呈极显著水平。(2)当土壤类型为壤土时,用900～970 nm最大反射率和900～970 nm反射率总和估算θ相关性最好。(3)蓝边反射率总和(R2=0.26和RMSE=0.09 m3·m-3)和780～970 nm吸收深度(R2=0.32和RMSE=0.10 m3·m-3)估算砂土的含水量相关性最好。在估算壤土的含水量时,900～970 nm最大反射率(R2=0.92和RMSE=0.05 m3·m-3)与900～970 nm反射率总和估算模型的精度最高(R2=0. 92和RMSE=0.04 m3·m-3)。(4)用人工神经网络模型能够更好地估算两种土壤的含水量(R2=0.87和RMSE=0.05 m3·m-3)。因此,人工神经网络模型对θ估算具有巨大的潜力。     

Quantitative calculation of odd effects for ferromagnets in strong fields

In an “odd” effect a quantity associated with the effect changes sign but retains its magnitude when the magnetic field H is reversed. It is not difficult to see that the quantity E associated with this effect (e.g., the potential difference E which arises along the measurement direction r in the Hall effect) is an odd periodic (with a period of 2π) function of the angle θ between H and I_s with respect to an arbitrarily selected coordinate axis 1 (Fig. 1, where I_s is the spontaneous magnetization). Using this property of E and the working hypothesis that E for a ferromagnet has a finite and nonvanishing limit as H → ∞ (and then as θ → 0), we can find by a purely analytic method (for strong fields) a rather simple relation between H and E. We will derive this equation.     

Theoretical study of resistance against light-induced scattering in LiNbO3:M (M = Mg2+, Zn2+, In3+, Sc3+) crystals

Based on a multi-three-wave mixing model, we theoretically study the resistance against light-induced scattering in LiNbO(3):M (M=Mg(2+),Zn(2+),In(3+),Sc(3+)) crystals. We have simulated the intensity angular distribution of light-induced scatterings. We have also shown that the total light-induced scattering will be much less than 1% of the incident light intensity when the photovoltaic field E(ph) is less than 4.0x10(6)V/m .Phase gratings and signal beams can still be formed and amplified effectively in LiNbO(3):M crystals, with E(ph) less than 4.0x10(6)V/m .     

种电热驱动法布里 珀罗光调制器

提出了一种用于显示基于微机电系统的电热驱动法布里 珀罗光调制器.利用多光束干涉理论分析了该调制器的原理及光学特性.分析表明:当腔长为(2k+1)λ/4时,反射光强取极大值|当腔长为2kλ/4时,反射光强取极小值|通过改变腔长可以实现显示.光源谱宽越窄,衬比度越高|干涉级次越低,衬比度越高|衬比度随反射率的增加而减小.借助Ansys软件仿真分析了调制器的驱动特性.加工了器件并搭建实验装置进行了动态响应特性测试实验.结果表明,该调制器具有驱动电压低至3.2 V,响应速度约为5 kHz的良好驱动特性.实验结果初步验证了该结构的可行性.     

Stark spectra of Rydberg states in atomic cesium in the vicinity of n=18

The Stark structures in a cesium atom around n=18 are numerically calculated. The results show that the components of 20D states with a small azimuthal quantum number |m| shift upward a lot, and those with a large |m| shift downward a little within 1100 V/cm. All components of P states shift downward. Experimental work has been performed in ultracold atomic cesium. Atoms initially in 6P3/2 state are excited to high-n Rydberg states by a polarization light perpendicular to the field, and Stark spectra with |m|=1/2,3/2,5/2 are simultaneously observed with a large linewidth for the first time. The observed spectra are analyzed in detail. The relative transition probability is calculated. The experimental results are in good agreement with our numerical computation.     

电光与磁光效应的互补特性及其传感应用

研究了兼有电光效应和磁光效应的晶体内电光与磁光效应的互补特性及其传感应用. 在光强度调制条件下, 晶体中偏振光波的电光调制与磁光调制具有互相补偿的效果, 从而能够使输出光强度保持为一个固定值. 基于这种互补特性, 提出了一种利用单块闪烁锗酸铋(Bi₄Ge₃O₁₂, BGO)晶体的电光补偿型光学电流(磁场)传感器, 其光学传感单元由两个偏振器和一块平行四边形BGO晶体组成. 该晶体自身能够产生π/2的光学相位偏置, 同时兼用作电流传感和电光补偿元件, 通过控制BGO晶体的外加电压, 能够实时补偿被测电流(磁场)变化引起的磁光旋转角和输出光强度的变化, 从而实现电流(磁场)的闭环光学测量. 实验测量了5.0 A范围内的工频交流电流, 所需要的电光补偿电压约为21.2 V/A, 补偿电压与被测电流之间具有良好的线性关系, 其非线性误差低于1.7%.