Structural investigation and electronic band transitions of nanostructured TiO2 thin films

Titanium dioxide (TiO₂) thin film was deposited on n‐Si (100) substrate by reactive DC magnetron sputtering system at 250 °C temperature. The deposited film was thermally treated for 3 h in the range of 400‐1000 °C by conventional thermal annealing (CTA) in air atmosphere. The effects of the annealing temperature on the structural and morphological properties of the films were investigated by X‐ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD measurements show that the rutile phase is the dominant crystalline phase for the film annealed at 800 °C. According to AFM results, the increased grain sizes indicate that the annealing improves the crystalline quality of the TiO₂ film. In addition, the formation of the interfacial SiO₂ layer between TiO₂ film and Si substrate was evaluated by the transmittance spectra obtained with FTIR spectrometer. The electronic band transitions of as‐deposited and annealed films were also studied by using photoluminescence (PL) spectroscopy at room temperature. The results show that the dislocation density and microstrain in the film were decreased by increasing annealing temperature for both anatase and rutile phases. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO2 films

Mixed ZnO‐ZrO₂ films have been obtained by sol‐gel technology. By using spin coating method, the films were deposited on Si and glass substrates. The influence of thermal annealings (the temperatures vary from 400 °C to 750 °C) on their structural properties has been studied. The structural behavior has been investigated by the means of XRD and FTIR techniques. The results revealed no presence of mixed oxide phases, the detected crystal phases were related to the hexagonal ZnO and to crystalline ZrO₂. The sol‐gel ZnO‐ZrO₂ films showed polycrystalline structure with a certain degree of an amorphous fraction. The optical transmittance reached 91% and it diminished with increasing the annealing temperatures. The optical properties of the sol‐gel ZnO‐ZrO₂ films, deposited on glass substrates are excellent with high transparency and better then those of pure ZrO₂ films, obtained at similar technological conditions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Annealing effects of highly homogeneous a-Si1−xCx:H

We report the effect of annealing on the properties of amorphous hydrogenated silicon carbide thin films. The samples were deposited onto different substrates by plasma enhanced chemical vapor deposition at temperatures between 300 and 350 °C. The gaseous mixture was formed by silane and methane, at the ‘silane starving plasma regime’, and diluted with hydrogen. Rutherford backscattering and Fourier transform infrared spectrometry were used, respectively, to determine the atomic composition and chemical bonds of the samples. The film’s structure was analyzed by means of X-ray absorption fine structure and X-ray diffraction. For temperatures higher than 600 °C, amorphous silicon carbide films annealed under inert atmosphere (Ar or N₂) clearly changed their structural and compositional properties due to carbon loss and oxidation, caused by the presence of some oxygen in the annealing system. At 1000 °C, crystallization of the films becomes evident but only stoichiometric films deposited on single crystalline Si[1 0 0] substrates presented epitaxial formation of SiC crystals, showing that the crystallization process is substrate dependent. Films annealed in high-vacuum also changed their structural properties for annealing temperatures higher than 600 °C, but no traces of oxidation were observed or variations in their silicon or carbon content. At 1200 °C the stoichiometric films are fully polycrystalline, showing the existence of only a SiC phase. The XANES signal of samples deposited onto different substrates and annealed under high-vacuum also show that crystallization is highly substrate dependent.     

Effect of Thermal Annealing on Structural Properties,Morphologies and Electrical Properties of TiO2 Thin Films Grown by MOCVD

TiO₂ thin films, were deposited on Si(100) and Si(111) substrates by metalorganic chemical vapor deposition at 500 °C, and have been annealed for 2 min, 30 min and 10 hours at the temperature from 600 °C to 900 °C, in oxygen and air flow, respectively. XRD and atomic force microscopy characterized the structural properties and surface morphologies of the films. As‐deposited films show anatase polycrystalline structure with a surface morphology of regular rectangled grains with distinct boundaries. Rutile phase formed for films annealed above 600 °C, and pure rutile polycrystalline films with (110) orientation can be obtained after annealing under adequate conditions. Rutile annealed films exhibit a surface morphology of equiaxed grains without distinct boundaries. The effects of substrate orientation, annealing time and atmosphere on the structure and surface morphology of films have also been studied. Capacitance‐Voltage measurements have been performed for films deposited on Si(100) before and after annealing. The dielectric properties of TiO₂ films were greatly improved by thermal annealing above 600 °C in oxygen.     

Synthesis and properties of α‐Fe2O3 nanorods

We report synthesis of α‐Fe₂O₃ (hematite) nanorods by reverse micelles method using cetyltrimethyl ammonium bromide (CTAB) as surfactant and calcined at 300 °C. The calcined α‐Fe₂O₃ nanorods were characterized by X‐ray diffraction (XRD), high‐resolution scanning electron microscopy (HRSEM), transmission electron microscopy (TEM), energy dispersive spectrometer (EDS), fourier transform infrared spectroscopy (FTIR) and vibrating sample magnetometer (VSM). The result showed that the α‐Fe₂O₃ nanorods were hexagonal structure. The nanorods have diameter of 30‐50 nm and length of 120‐150 nm. The weak ferromagnetic behavior was observed with saturation magnetization = 0.6 emu/g, coercive force = 25 Oe and remanant magnetization = 0.03 emu/g. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

α‐Fe2O3 nanospindles loaded with ZnO nanocrystals: Synthesis and improved gas sensing performance

ZnO/α‐Fe₂O₃ nanocomposites were fabricated through a two‐step hydrothermal method. The morphology and composition of the as‐synthesized products were characterized by X‐ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), energy‐dispersive X‐ray spectroscopy (EDS), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The gas sensing properties of the fabricated products were investigated towards ethanol, acetone, propanol, isopropanol, formaldehyde, chloroform and so on. The results demonstrated that the ZnO/α‐Fe₂O₃ nanocomposites exhibited excellent sensing properties and showed remarkably higher sensing responses and much lower optimum operating temperature compared to individual ZnO and α‐Fe₂O₃. In addition, the ZnO/α‐Fe₂O₃ nanocomposites have some selectivity for ethanol, propanol and isopropanol. The possible gas sensing mechanism was also proposed. Our studies demonstrate that our fabricated materials could be widely used in the future.     

Crystallization of silicon thin films by current‐induced joule heating using a tungsten overcoat

A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco‐etch, transmission electron microscopy (TEM), and x‐ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1‐0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron‐migration effect near the electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature dependence of growth orientation and surface morphology of Li‐doped ZnO thin films on SiO2/Si substrates

ZnO thin films doped with Li (ZnO:Li) were deposited onto SiO₂/Si (100) substrates by direct‐current sputtering technique in the temperature range from room temperature to 500 °C. The crystalline structure, surface morphology and composition, and optical reflectivity of the deposited films were studied by X‐ray diffraction (XRD), Scanning Electron Microscopy (SEM), X‐ray Photoelectron Spectroscopy (XPS) and optical reflection measurements. Rough surface p‐type ZnO thin film deposition was confirmed. The results indicated that the ZnO:Li films growed at low temperatures show c‐axis orientation, while a‐axis growth direction is preferable at high temperatures. Moreover, the optical reflectivity from the surface of the films matched very well with the obtained results. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis of nano‐crystalline zeolite β: Effects of crystallization parameters

The effects of variation in Si/Al ratio (25 and 100) and crystallization temperature (80 °C to 180 °C, at an interval of 20 K) on crystal size of zeolite β were studied. Products obtained at different synthesis parameters were characterized by powder X‐ray diffraction, IR spectroscopy, thermal analysis, scanning electron microscopy and nitrogen adsorption. Increase in crystal size with crystallization temperature and Si/Al molar ratio was observed. Crystal morphology at 140 °C was spherical whereas at 180 °C it was of irregular shape. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Poole‐Frenkel electrical conduction in europium oxide films deposited on Si(100)

Thin Eu₂O₃ films were prepared on Si (P) substrates to form MOS devices. The oxide crystal structure was determined by X‐ray diffraction (XRD). The electrical transport properties of the devices with amorphous and crystalline Eu oxide were investigated. The current‐voltage and current‐temperature characteristics suggest a Poole‐Frenkel (PF) type mechanism of carrier transport through the device when the applied field is more than 105 V/cm. A deviation from PF leakage current course was found and attributed to the current carrier trapping. We have also observed that, the dielectric spectra of MOS structure are different when the insulator is an amorphous or crystalline thin film. From which we calculate the relaxation time (τ) of the interface (insulator/semiconductor) dipoles. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

We have prepared (1 1 1)-oriented Si layers on SiO₂ (fused silica) substrates from amorphous-Si(a-Si)/Al or Al/a-Si stacked layers using an aluminum-induced crystallization (AIC) method. The X-ray diffraction (XRD) intensity from the (1 1 1) planes of Si was found to depend significantly on growth conditions such as the thicknesses of Si and Al, deposition order (a-Si/Al or Al/a-Si on SiO₂), deposition technique (sputtering or vacuum evaporation) and exposure time of the Al layer to air before the deposition of Si. The crystal orientation of the Si layers was confirmed by θ−2θ, 2θ XRD and electron backscatter diffraction (EBSD). The photoresponse properties of semiconducting BaSi₂ films formed on the (1 1 1)-oriented Si layers by the AIC method were measured at room temperature. Photocurrents were clearly observed for photon energies greater than 1.25 eV. The external quantum efficiencies of the BaSi₂ were also evaluated.     

Effect of Al addition on the crystallization of a-AlxSi1−x (0.025 x 0.100) by electron-beam irradiation

Si crystals and nano-rods were formed in Al-added amorphous Si films (a-Al_xSi_1−x; 0.025 x 0.100) by the irradiation of a focused electron-beam; the films were in situ heated to be kept at 400 °C and the current density of the electron-beam was 15.7 pA/cm². The size, shape, and concentration of the Si crystallites were varied sensitively with the Al content as well as the irradiation time. Under the electron-beam irradiation, crystallization occurred to produce polycrystalline phases in the a-Al_0.025Si_0.975 film, while rod-shaped Si nanostructures were formed in the a-Al_0.050Si_0.950 and a-Al_0.100Si_0.900 film. It is evident that the removal of Al and as a result the atomic rearrangements and/or local restructuring in the Al/a-Si film are critically affected by the electron-beam irradiation, which lead to the local crystallization and growth of Si nanocrystallites.     

Synthesis of spindle‐shaped α‐FeOOH and α‐Fe2O3 nanocrystals

Spindle‐shaped α‐FeOOH nanocrystals were facilely synthesized using a poly (vinyl pyrrolidone) (PVP)‐assisted route under hydrothermal conditions. The chemical compositions and morphol‐ogies of the as‐prepared samples were characterized in detail by X‐ray power diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscope (TEM). The experimental results reveal that these spindle‐shaped α‐FeOOH nanocrystals have self‐organized into assemblies with hierarchical nanostructures. The crucial roles of PVP in the hydrothermal synthesis of hierarchical α‐FeOOH nanostructures were discussed. The possible formation mechanism was also suggested. Moreover, the spindle‐shaped α‐Fe₂O₃ nanocrystals could be easily obtained after calcining the α‐FeOOH prepared by the PVP‐assisted hydrothermal process. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The effect of Si/Al ratio of ZSM‐5 zeolite on its morphology,acidity and crystal size

ZSM‐5 zeolite crystal with different Si/Al molar ratios in the range of 10‐50 was synthesized using sodium silicate, aluminum sulfate and tetrapropylammonium bromide (TPA‐Br) as the organic template. The produced samples were characterized using XRD, FT‐IR, SEM and EDX techniques. All synthesized samples were found to be ZSM‐5 zeolite as confirmed by XRD and supported by FT‐IR. SEM results showed that ZSM‐5 synthesized with different Si/Al molar ratios had different morphologies and particle sizes. It was found that the average ZSM‐5 crystal size increased as Si/Al molar ratio increased. Thermogravimetric‐difference thermal analysis (TG‐DTA) technique was also used to measure the amount of template occluded inside the crystal pore. The synthesized Na‐ZSM‐5 was transformed into its acidic form, i.e., H‐ZSM‐5 using ion exchange method with ammonium nitrate solution. The H‐ZSM‐5 acidity was determined by NH₃‐TPD. These results showed that different Si/Al molar ratios have effect on surface acidity of samples. The surface areas of the H‐ZSM‐5 were measured using BET method and the results showed that, decrease in Si/Al ratio, decreased the surface area. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Preparation and optical properties of AgGaS2 nanofilms

In this paper, AgGaS₂ nanofilms have been prepared by a two‐step process involving the successive ionic layer absorption and reaction (SILAR) and annealing method. Using AgNO₃, GaCl₃ and Na₂S₂O₃ as reaction sources, the mixture films were firstly deposited on quartz glass substrates at room temperature, and then annealed in Ar environment at 200–500 °C for 4 h, respectively. The effects of annealing temperature on structural and optical properties were investigated by XRD, UV‐Vis, EDS and photoluminescence (PL) spectra. It was revealed in XRD results that α‐Ag₉GaS₆ was contained in the samples annealed at 200 °C, and this phase was decreased with increase of the annealing temperatures. When the sample was annealed at above 400 °C, the chalcopyrite AgGaS₂ nanofilm was obtained. The preferred orientation was exhibited along the (112) plane. It was shown in atomic force microscopy (AFM) results that the grain sizes in AgGaS₂ nanofilms were 18‐24 nm and the thin films were smooth and strongly adherent to the substrates. When the annealing temperature was higher than 400 °C, it is an optimum condition to improve the structural and optical properties of the AgGaS₂ thin films. The room temperature PL spectra of AgGaS₂ nanofilms showed prominent band edge emission at 2.72 eV. Based on all results mentioned above, it can be concluded that the SILAR‐annealing method is preferable to preparing high‐quality AgGaS₂ nanofilms. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Silicon nanowire growth on poly‐silicon‐on‐quartz substrates formed by aluminum‐induced crystallization

The vertical growth of Si nanowires on non‐monocrystalline substrates is of significant interest for photovoltaics and other energy harvesting applications. In this paper, we present results on using poly‐Si layers formed by aluminum‐induced crystallization (AIC) on fused quartz wafers as an alternative substrate for the vapor‐liquid‐solid (VLS) growth of vertical Si nanowires. Oxidation of the Al surface to Al₂O₃ before the a‐Si deposition was shown to be a key requirement in the formation of the poly‐Si template since it promotes the crystallization of the a‐Si into Si(111) which is required for vertical silicon nanowire growth. The effect of Al deposition technique (DC sputtering versus thermal evaporation) on a‐Si crystallization and Si nanowire growth was investigated. The use of Al thermal evaporation yielded AIC poly‐Si layers with the highest fraction of 〈111〉 grains as measured by orientation imaging microscopy (OIM) which enabled the growth of vertical Si nanowires. Cross‐sectional transmission electron microscopy analysis confirmed that the 〈111〉 Si nanowires grew epitaxially off of {111}poly‐Si grains in the AIC layer. This study demonstrates the potential of using AIC poly‐Si as a template layer for the vertical growth of silicon nanowires on amorphous substrates.     

Rapid synthesis and catalytic performance of α‐Mn2O3 single‐crystal nanowires

Single‐crystal α‐Mn₂O₃ nanowires were prepared via a “self‐sacrificing template” route, simply by calcining the prepared α‐MnO₂ nanowire precursors at 550 °C for 1.5 h. XRD, TEM, SEM and HRTEM characterizations show that the as‐prepared α‐Mn₂O₃ samples are all phase pure and the nanowires have uniform diameters of approximately 15‐30 nm and lengths up to several micrometers. The catalytic performances of the prepared α‐Mn₂O₃ nanowires were studied in the degradation of coking wastewater with H₂O₂ as the oxidant, and the technological conditions were optimized by single‐factor and orthogonal experiments. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

利用快速热退火法制备多晶硅薄膜

为了制备优质的多晶硅薄膜,该论文研究了非晶硅薄膜的快速热退火(RTA)技术.先利用PECVD设备沉积非晶硅薄膜,然后把其放入快速热退火炉中进行退火.退火前后的薄膜利用X射线衍射(XRD)仪、Raman光谱仪及扫描电子显微镜(SEM)测试其晶体结构及表面形貌,利用电导率测试设备测试其暗电导率.研究表明退火温度、退火时间以及沉积时的衬底温度对非晶硅薄膜的晶化都有很大的影响.     

synthesis of high‐quality crystalline α‐MoO3 nanobelts

High‐quality crystalline MoO₃ nanobelts were successfully fabricated with a facile hydrothermal route by using common and inexpensive NaCl as a capping agent. The products are thoroughly characterized by the combination of different techniques. The results indicate that as‐prepared MoO₃ nanobelts have an orthorhombic crystal structure (α‐MoO₃) with growth preferential in the [001] direction, the size of the obtained MoO₃ nanobelts ranges from 200 nm to 300 nm in width and micrometers in length. The effects of the amount of NaCl on the morphology and size of the resultant MoO₃ were also investigated, it is clearly shown that the presence of appropriate amount of NaCl plays a crucial role in controlling the size and morphology of the obtained MoO₃. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)