Carrier Transport Properties of InS Single Crystals

The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature‐dependent Hall effect measurements revealed a carrier effective mass of 0.95 m₀, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.     

Spray deposition and characterization of undoped and In‐doped tin disulphide thin films

Undoped and Indium doped tin disulphide (SnS₂) thin films had been deposited onto glass substrates at T_s = 300 °C using spray pyrolysis technique under atmospheric pressure with stannous chloride, indium chloride and thiourea as precursors. The structural, optical and electrical properties of the deposited films were characterized. The XRD pattern revealed that the undoped and doped films had preferred orientation along (002) plane with hexagonal structure. FESEM micrographs had shown that morphologies of the films changed with indium doping. Optical constant such as refractive index (n), extinction coefficient (k), real and imaginary parts of dielectric constants were evaluated from transmittance and reflectance spectra in UV‐Visible spectroscopy. The optical absorption data were used to determine the band gap energy and it was found to be 2.75 eV for undoped and 2.50 eV for indium doped films respectively. The room temperature dark resistivity was found to be 4.545 × 10³ Ω‐cm and 5.406 × 10³ Ω‐cm for undoped and In‐doped films respectively.     

InOx semiconductor films deposited on glass substrates for transparent electronics

Transparent undoped semiconductor indium oxide films were deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of indium at low substrate temperature. It was experimentally verified that the variation of rf power density has a strong influence on the electrical and structural properties of the films. The thickness of the InO_x films is of about 100 nm. Results show that InO_x films show an average visible transmittance of about 85% and energy gap of about 2.6 eV. Structural and electrical conductivity measurements show that films are polycrystalline and there exists a linear variation of conductivity logarithm vs reciprocal of temperature. Electrical conductivity variation of 17.6 to 5.8 × 10⁻³ (Ω cm)⁻¹ for films produced at rf power densities ranging from 3.9 to 78.1 mW cm⁻³ was obtained. This controllable semiconductor behavior can therefore satisfy the requirement of a particular application for these type of films.     

InN excitonic deformation potentials determined experimentally

We report the experimental determination of the interband deformation potentials of indium nitride by combining both optical spectroscopy investigations and high-resolution X-ray measurements performed on a series of InN films grown by metal organic vapour-phase epitaxy. Our approach, which follows the one used for GaN by Shan et al. [Phys. Rev. B. 54 (1996) 13460], gives here for InN a₁=−7.66 eV, a₂=−2.59 eV, b₁=5.06 eV, and b₂=−2.53 eV.     

Semiconducting Properties of TI2Te3 Single Crystals

Electrical conductivity and Hall effect measurements were performed on single crystals of TI₂Te₃ to have the general semiconducting behaviour of this compound. The measurements were done at the temperature range 160–350 K. All crystals were found to be of p-type conductivity. The values of the Hall coefficient and the electrical conductivity at room temperature were 1.59 × 10³ cm³/coul and 3.2 × 10⁻² ω⁻¹ cm⁻¹, respectively. The hole concentration at the same temperature was driven as 39.31 × 10¹¹ cm⁻³. The energy gap was found to be 0.7 eV where the depth of impurity centers was 0.45 eV. The temperature dependence of the mobility is discussed.     

Electrical and optical properties of CuGaTe2

The electrical and optical properties of CuGaTe₂ single crystals were investigated by resistivity and Hall effect measurements in the temperatur range T = 77… 300 K and optical transmission measurements in the temperature range T = 20… 300 K at photon energies hν = 1.15…1.50 eV. All samples were p-type conducting due to shallow acceptors with ionization energies E_A1 ≈︁ 10⁻³ eV and concentrations N_A1 ≈︁ p = (2…4). 10¹⁸ cm⁻³. The absorption spectra could be described by simultaneous consideration of acceptor - to - conduction band transitions with E_A2 = 360 meV and N_A2 ≈︁ 10²² cm⁻³ and valence band - to - conduction band transitions with E_G = 1.24 eV at room temperaure. The temperature coefficient of the fundamental edge is dE_G/dT = −4.0. 10⁻⁴ eV/K. The results are discussed with regard to some general trends found in the Cu-III–VI₂ compounds.     

Thermal stability of thin InGaN films on GaN

The thermal stability of ∼200-nm-thick InGaN thin films on GaN was investigated using isothermal and isochronal post-growth anneals. The In_xGa_1−xN films (x=0.08–0.18) were annealed in N₂ at 600–1000 °C for 15–60 min, and the resulting film degradation was monitored using X-ray diffraction (XRD) and photoluminescence (PL) measurements. As expected, films with higher indium concentration showed more evidence for decomposition than the samples with lower indium concentration. Also for each alloy composition, decreases in the PL intensity were observed starting at much lower temperatures compared to decreases in the XRD intensity. This difference in sensitivity of the PL and XRD techniques to the InGaN decomposition suggest that defects that quench luminescence are generated prior to the onset of structural decomposition. For the higher indium concentration films, the bulk decomposition proceeds by forming metallic indium and gallium regions as observed by XRD. For the 18% indium concentration film, measurement of the temperature-dependent InGaN decomposition yields an activation energy, E_A, of 0.87±0.07 eV, which is similar to the E_A for bulk InN decomposition. The InGaN integrated XRD signal of the 18% film displays an exponential decrease vs. time, implying InGaN decomposition proceeds via a first-order reaction mechanism.     

Growth and electrical properties of epitaxial CuInS2 thin films on GaAs substrates

CuInS₂ thin films with thicknesses in the range of 500 Å were deposited onto semi-insulating (111) A-oriented GaAs substrates by flash evaporation in the substrate temperature range T_sub = 570 … 870 K. Epitaxial growth begins at T_sub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at T_sub = 870 K. Films grown at T_sub ≦ 800 K showed n-type conductivity whereas at growth temperatures T_sub ≧ 850 K the films were always p-type conducting. A donor level and an acceptor level with ionization energies of 0.24 eV and 0.22 eV, respectively, were found from an analysis of the electrical measurements.     

Crystal Data,Photoconductivity and Carrier Scattering Mechanisms in CuIn5S8 Single Crystals

The X‐ray diffraction has revealed that CuIn₅S₈ is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn₅S₈ crystals are measured in the temperature range of 50‐400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of ∼1.35 eV at 0 K, a carrier effective mass of 0.2 m₀ , an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.     

Electrical and optical properties of Co doped TlGaS2 crystals

In this study, Co doped TlGaS₂ single crystals which belongs to the class of A^IIIB^IIIX₂^VI have been investigated by means of XRD, temperature dependent dark and illuminated conductivity, Space Charge Limited Currents and absorption measurements. The room temperature conductivity and trap concentration values were about 10^‐8 (Ω‐cm)^‐1 and 7.5 × 10¹³ cm^‐3, respectively. From the temperature dependent conductivity measurements, two activation energies namely 271 and 12 meV have been determined in the high and low temperature regions, respectively. The trap level at 271 meV that was determined by the dark temperature dependent conductivity measurement has also been verified by Space Charge Limited Currents analysis. The absorption measurements have showed that the layered compound had indirect and direct band gaps and the values were determined to be 2.49 and 2.56 eV, respectively. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS_0.5Se_0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×10¹⁷ and 4.1×10¹⁶ cm^‐3, respectively, and an electron effective mass of 0.41 m₀. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.     

Electrical conductivity and thermoelectric power of liquid AgSb Te2

The electrical conductivity and thermoelectric power of liquid AgSb Te₂ have been investigated as a function of temperature. Experimental data are analyzed in terms of a recent model proposed by Mott. The activation energy for electrical conductivity and thermoelectric power is found to be approximately 0.50 eV with a large temperature coefficient γ ～ 7 × 10^?4 eV/deg K. The gradual transition from a semiconducting to a metallic behaviour has been observed at high temperature.     

Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films

The aim of this work is to study the influence of Ge addition on the optical and electrical properties in eutectic SbTe thin films (with the compositions: Sb₇₀Te₃₀, Ge₂Sb₇₀Te₂₈, Ge₅Sb₇₀Te₂₅ and Ge₁₀Sb₆₅Te₂₅) using visible optical reflectance, ellipsometry measurements, near infrared transmittance spectra, and four probe electrical resistivity measurements. From near infrared transmittance measurements the optical band gap was determined using Tauc’s expression for amorphous materials, a value of about 0.47 eV was obtained without any clear dependence on the Ge content. All amorphous films have approximately the same reflectance value, however the contrast ratio between the crystalline and amorphous phases decrease with increase of Ge. Using in situ four probe measurements versus temperature the dependence of the activation energy of conductance and the onset of the crystallization temperature have been determined for different materials. Four probe measurements have shown that the resistivity of amorphous films increases with increase of Ge. The results obtained have shown that optical and electrical properties of SbTe films with near eutectic composition change with the Ge content and depending on the application, in either optical or electrical memory devices, the most suitable composition needs to be determined.     

Photoconductivity and absorption in amorphous Si

The paper deals with photoconductivity and absorption in aSi specimens, prepared mainly by the decomposition of silane in a glow discharge. Substrate temperatures, T_d, between 300 K and 650 K were used during deposition. The normalised photoresponse was measured at room temperature as a function of photon energy and T_d in a spectral range from 0.5 eV to 3 eV. The absorption coefficient was determined for evaporated, sputtered and glow discharge specimens.The main features of the results are in agreement with conclusions drawn from previous electrical transport and field effect measurements and can be interpreted on the basis of the proposed model for the localised state distribution. It is confirmed that ?_c??_v is 1.5 to 1.6 eV, and that there is a local density of state maximum at about 1.2 eV below ?_c. At room temperature the steady photocurrent is carried predominantly by electrons in states above ?_c, whether excitation is from localized or extended states. Specimens prepared at T_d > 500 K are highly photosensitive, with electron recombination lifetimes, τ, of up to 10^?5s. Rise and decay times of the signal lie in the millisecond range. For T_d < 500 K there is a drastic decrease in τ, which falls to 10^?11 s at $\text{T}{}_{\mathrm{<mtext>d</mtext>}}\text{? 300}\text{K}$ and is even less for evaporated specimens. These results are discussed in some detail.     

On the conduction mechanism and thermoelectric phenomena in In6S7 layer crystals

In the present paper, measurements of the electrical conductivity and Hall coefficient on single crystal of In₆S₇, grown by a new crystal growth technique, were done. The crystal was found to be of n-type conductivity. The low conductivity sample showed as the most striking feature an exponential increase of the Hall mobility with temperature. This effect was explained by assuming a mixed conduction and different scattering mechanisms for electrons and holes in the same temperature range. Also we have made thermoelectric power measurements to support this assumption. An energy gap of 0.64 eV was found.     

Crystal data and some physical properties of Tl2InGaTe4 crystals

The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl₂InGaTe₄ crystals are reported for the first time. The X‐ray diffraction technique has revealed that Tl₂InGaTe₄ is a single phase crystal of tetragonal body‐centered structure belonging to the space group. A Debye temperature of 124 K is calculated from the results of the X‐ray data. The current‐voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n ‐type conduction with an electrical resistivity, electron density and Hall mobility of 2.49×10³ Ω cm, 4.76×10¹² cm^–3 and 527 cm²V^–1s^–1, respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of the substrate temperature on the structural,optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350‐550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (T_s) on the structural, morphological, optical, and electrical properties of the films were investigated using x‐ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall‐effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80‐330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all T_s. With the increase of T_s the intensity of the diffraction peaks increased and well‐resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38‐1.18 eV. Hall‐effect measurements revealed the resistivity of films in the range 112‐20 Ω cm for films deposited at different T_s. The activation energy for films deposited at different T_s was in the range of 0.14 eV‐0.28 eV as derived from the analysis of the data of low‐temperature resistivity measurements. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical properties of annealed a-SiC:H thin films

In the present work the dependence of electrical properties of a-SiC:H thin films on annealing temperature, T_a, has been extensively studied. From the measurements of dark dc electrical conductivity, σ_D, in the high temperature range (from 283 up to 493 K), was found that the conductivity activation energy, E_a, is invariant for T_a ⩽ 673 K and equal to 0.64 eV, whereas for T_a from 673 up to 873 K, E_a increases at about 0.2 eV reaching to a maximum value 0.85 eV at T_a = 873 K, suggesting the optimum material quality. This behavior of E_a as a function of T_a is mainly attributed to relaxation of the strain in the amorphous network, which is possibly combined with weak hydrogen emission for temperatures up to 873 K. For further increase of T_a (>873 K) the phenomenon of hydrogen emission, causes rapid decrease of E_a down to 0.24 eV at T_a = 998 K, deteriorating the material quality. These results are also supported by the measurements of dark dc electrical conductivity in the low temperature range (from 133 up to 283 K), where the dependence of the density of gap states at the Fermi level, N(E_F), on annealing temperature presents the minimum value at T_a = 873 K. The Meyer–Nelder rule was found to hold for the a-SiC:H thin films for annealing temperatures up to 873 K. Finally, the dependence of dark dc electrical conductivity at room temperature, σ_DRT, on T_a showed to reflect directly the dependence of E_a on T_a.     

Electrical and Optical Properties of Oriented (CH)x

We have measured the optical and electrical properties of both graphoepitaxially grown and shear-flow polymerized polyacetylene filmzs. The former show a pronounced optical anisotrop;y whereas the latter do not. This result is is correlated with the orientation of the chain axes relative to the fibra axes relative to the fibre axis, which is preferentially parallel in graphoepitaxially grown films. The electrical anisotropy was found to be rather weak. Optical measurements on doped (CH)_x indicate that both the characteristic IR modes at 0.11 eV and 0.17 eV and the mid-gap absorption around 0.5 eV, which have been attributed to solitonic defects, persist up to the metallic level. This result shows that both the IR modes and the mid-gap absorption are not necessarily signatures for solitonic defects. furthermore we conclude that the impurity potential is more effective than hitherto assumed.     

Effect of Doping and Irradiation on Optical Parameters of Triglycine Sulphate Single Crystals

Crystals of triglycine sulphate (TGS) doped with orthonitroaniline (ONA) irradiated with different doses of gamma-radiation were used to investigate gamma-radiation effect on electrical and optical parameters. The absorption coefficient and the reflectance were measured and hence the extinction coefficient, the optical refractive index and the dielectric constants (e_r′, e_r″) of unirradiated and irradiated TGS crystals were calculated. Values of the allowed indirect optical energy gap E_g^opt. of TGS doped with ONA were calculated as a function of gamma-dose. Value of E_g^opt. decreases from 4.72 eV to 4.25 eV with increasing gamma-doses from 0 up to 3 Mrad. The values of the static dielectric constant e_r(0) and the effective electrical conductivity sigma₀ at room temperature and their dependence on gamma-dose were also calculated.