甲酸根离子均匀掺杂的卤化银中的光电子特性

甲酸根离子(HCO-2)作为一种“空穴-电子转换剂”掺杂在卤化银中,可以提高潜影形成过程中光电子的利用率,俘获光生空穴,减少潜影形成过程中电子-空穴复合所造成的电子损失;同时还可以释放一个电子,提高感光效率。采用微波吸收介电谱检测技术,检测了不同浓度甲酸根离子均匀掺杂的立方体AgCl和AgBr乳剂在脉冲激光作用下所产生的光电子衰减信号。通过比较光电子的衰减时间和寿命,分析了甲酸根离子的空穴陷阱效应对立方体AgCl和AgBr乳剂中光电子衰减行为的影响,并得到了最佳均匀掺杂浓度（10^-5mol/molAg）。     

聚合物掺杂有机小分子发光二极管的电致发光与杂质陷阱效应

在新型空穴传输聚合物聚TPD(PTPD)中掺杂电子传输有机小分子荧光染料Rubrene制成薄膜器件.考察了不同掺杂浓度以及不同薄膜厚度器件的电致发光性能,结果表明存在杂质陷阱效应.基于固体中双注入理论，假设杂质陷阱限制在分立能级上，通过求解泊松方程，得到了掺杂器件J-V特性解析模型.该模型的计算值与实验结果一致.     

甲酸根离子掺杂的AgCl乳剂增感后的光电子特性研究

甲酸根离子作为一种“空穴－电子转换剂”掺杂在卤化银中可以提高潜影形成过程中光电子的利用率。将不同位置甲酸根离子掺杂的立方体AgCl乳剂又经相同条件的硫加金或感绿染料增感后,采用微波吸收介电谱检测技术对样品在脉冲激光作用下所产生的光电子衰减信号进行检测,通过分析光电子的衰减特性,发现甲酸根离子仍然能发挥其空穴陷阱效应,而且自由光电子的衰减时间和寿命与未增感的掺杂乳剂随掺杂位置的变化趋势一致。     

SrS:Eu与SrS:Eu,Sm中电子陷阱与光存储研究

对SrS:Eu和SrS:Eu,Sm激发初始阶段的荧光上升过程和余辉进行了研究,并进一步考证其中 电子陷阱的属性.通过两种样品和两个阶段的比较,对陷阱数量和深度的变化、量子效率以 及电子俘获和释放、复合过程进行了分析,发现Sm离子并不影响陷阱的数量.利用吸收光谱 方法研究了SrS:Eu,Sm中电子由陷阱能级向导带的跃迁.通过陷阱饱和-倒空吸收谱差,即激 励吸收谱及其强度随Eu,Sm浓度的变化,探讨了掺杂浓度对陷阱浓度和光存储饱和量的影响. 结果表明Sm离子的作用是使陷阱能级加深从而能稳定地储存电子.通过激励吸收谱峰值强度 可确切地比较光存储材料在这方面的性能,并与光激励谱的测量方法作了对照. 关键词： 电子陷阱 光存储 电子俘获 光激励发光     

如何利用真空标度（VRBE）能级图理性设计与探索长余辉发光与光存储材料

简要介绍了无机长余辉发光材料与光存储材料的概念及其起源和研究现状。简述了三种经典商业长余辉发光与光存储材料。基于这三种商业发光材料,分析了理性设计这类材料存在的问题,并介绍如何基于真空标度能级图（Vacuum referred binding energy(VRBE)diagram）来设计长余辉发光与光存储材料的策略。首先,介绍了真空标度能级图的定义和构建其所需要的模型参数和实验光谱数据。在稀土离子掺杂无机化合物真空标度能级图的基础上,阐述二价和三价铋离子的真空标度能级位置。其次,基于YPO4模型材料的真空标度能级图,介绍电子释放模型和空穴释放模型的定义和区别。最后,结合稀土离子和铋离子掺杂REPO4(RE=La,Y,Lu)及NaYGeO4家族化合物的真空标度能级图,简要论述如何设计电子与空穴陷阱中心以及如何调控电子或空穴陷阱的深度。真空标度能级图对讨论载流子的捕获与释放以及理性设计与探索无机长余辉发光与光存储材料具有一定的指导意义。     

掺杂的AgCl微晶在化学增感条件下的光电子衰减特性

利用微波吸收介电谱技术研究了K₄Fe(CN)₆浅电子陷阱掺杂剂和S+Au增感剂对立方体AgCl微晶光生电子衰减时间分辨特性的影响。结果表明,掺杂浓度为10-8～10-7 mol·mol-1Ag时,在增感之前,掺杂位置越接近表面时,光电子衰减过程会变慢,即衰减时间增加;S+Au增感后的掺杂乳剂中光电子衰减变快,说明了增感中心起深电子陷阱作用,当掺杂位置接近表面90%Ag时,光电子衰减时间突然减小,说明表面掺杂中心和增感中心可能发生了某些反应。     

利用电子传输层掺杂改善有机发光器件的效率

利用BCP掺杂到电子传输层Alq中,在掺杂层中阻挡了空穴的迁移,调整了空穴和电子的平衡,将激子有效地限制在发光层中发光,从而增加有机电致发光器件的效率.器件的最大电流效率在外加电压9 V时达到4.1 cd/A(掺杂浓度8%时),与一般未掺杂器件相比效率提高了2倍多.同时也减少空穴到达阴极,而减少发光淬灭.     

水热法制备Nd3+掺杂WO3粉体及其光致变色性质

以钨酸钠为钨源,硝酸钕为钕源,加入硫酸钾作为矿化剂,在120℃条件下通过水热法成功合成了六方相钕掺杂三氧化钨纳米粉.采用X射线衍射、扫描电镜和X射线光电子能谱分别对掺杂纳米粉的物相、形貌和掺杂成分进行了研究.结果表明,钕离子成功掺杂进入三氧化钨晶格当中,使一部分钨离子转为+5价,从而使电子从价带激发到导带并且增加了光生电子-空穴对的数量,导致其对激发光具有更大的吸收能力,光致变色性能也得到了较大的增强.在钕离子掺杂浓度为5.63%时,材料的光致变色性能最好,其色差值为纯三氧化钨色差值的13倍.     

纳米硫化镍增感的溴化银微晶中光电子衰减特性研究

利用微弱信号的微波吸收相敏检测技术, 获得了纳米硫化镍增感的立方体溴化银乳剂中, 在增感时间增加的条件下, 自由光电子和浅束缚光电子的时间衰减曲线.分析了采用纳米硫化镍进行增感的溴化银乳剂中光生电子随增感时间衰减的过程, 讨论了卤化银晶体中电子陷阱对光电子运动行为的影响, 分析了电子陷阱效应及陷阱深度同增感时间之间的关系. 通过未增感样品与增感样品的衰减曲线对比, 得到了在此实验条件下的最佳增感时间为80min. 关键词： 纳米硫化镍 衰减时间 电子陷阱 寿命     

Snapback应力引起的90 nm NMOSFET's栅氧化层损伤研究

实验结果发现突发击穿(snapback)，偏置下雪崩热空穴注入NMOSFET栅氧化层，产生界面态，同时空穴会陷落在氧化层中.由于栅氧化层很薄，陷落的空穴会与隧穿入氧化层中的电子复合形成大量中性电子陷阱，使得栅隧穿电流不断增大.这些氧化层电子陷阱俘获电子后带负电，引起阈值电压增大、亚阈值电流减小.关态漏泄漏电流的退化分两个阶段：第一阶段亚阈值电流是主要成分，第二阶段栅电流是主要成分.在预加热电子(HE)应力后，HE产生的界面陷阱在snapback应力期间可以屏蔽雪崩热空穴注入栅氧化层，使器件snapback开态和关态特性退化变小. 关键词： 突发击穿 软击穿 应力引起的泄漏电流 热电子应力     

Na掺杂反式聚乙炔中的孤子晶格的能谱与电子束缚态

从离散的ＳＳＨ模型出发，考虑了链内的电子相互作用，以及由杂质和周围链上的荷电孤子产生的库仑势的影响，探讨了各种掺杂浓度的反式聚乙炔中孤子晶格的能谱与电子束缚态。计算结果表明：在孤子晶格的能谱中，在价带底有两条定域能级，在导带顶存在着多个电子束缚态，随掺杂浓度的升高，束缚态的局域性减弱，禁带中的孤子能级形成孤子能带。当掺杂浓度高达１６．６７％时，所有的电子束缚态都消失，转变为扩展态。孤子晶格的禁带宽度随着掺杂浓度的增加而增大，最高占据态与导带底之间的能隙则随之逐渐减小。孤子能带底与价带顶之间的能隙在临界浓度附近有一极大值。还讨论了电子－电子相互作用对孤子晶格能谱的影响。 关键词：     

Individual charge traps in silicon nanowires

We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies accurately and we show how the capacitance matrices of the traps can be obtained from the shape of the anomalies. From these capacitance matrices we deduce that the traps are located near or inside the wire. Based on the occurrence of the anomalies in wires with different doping levels we infer that most of the traps are arsenic dopant states. In some cases the anomalies are accompanied by a random telegraph signal which allows time resolved monitoring of the occupation of the trap. The spin of the trap states is determined via the Zeeman shift.     

Ionic conductivity and tracer diffusion in a lattice containing random traps

A model where the lattice contained a number of randomly distributed traps equal to the number of diffusing particles was investigated rigorously. Monte Carlo methods were used to determine the relevant correlation factors in the tracer diffusion and ionic conductivity. It was found that the temperature dependence of the correlation factors contributed a relatively small component to the activation energy of the overall transport process. The relevance of the findings to atomic transport in fluorite-related oxides containing divalent dopant ions is commented on.     

The effects of deep trap population on the thermoluminescence of Al2O3:C

The influence of deep traps on the 450 K thermoluminescence (TL) peak of Al₂O₃:C is studied. Depending upon the sample and on the degree of deep trap filling, features such as the TL width, area and height can vary considerably. These effects are interpreted to be due to: (a) sensitivity changes introduced by competition mechanisms involving deep electron and hole traps, and (b) the multiple component nature of the 450 K TL peak. The influence of the deep traps on the TL was studied using different excitation sources (beta irradiation or UV illumination), and step annealing procedures. Optical absorption measurements were used to monitor the concentration of F- and F⁺-centers. The data lead to the suggestion that the competing deep traps which become unstable at 800–875 K are hole traps, and that the competing deep traps which become unstable at 1100–1200 K are electron traps. Both the dose response of the TL signal and the TL sensitivity are shown to be influenced by sensitization and desensitization processes caused by the filling of deep electron and hole traps, respectively. Changes in the TL peak at low doses were also shown to be connected to the degree of filling of deep traps, emphasizing the influence of deep trap concentration and dose history of each sample in determining the TL properties of the material. Implications of these results for the optically stimulated luminescence properties are also discussed.     

Hyperfine interaction of polyacetylene intercalated with iron halide anions: 57Fe Mössbauer and EPR spectroscopy studies

⁵⁷Fe Mössbauer spectroscopy and EPR spectroscopy were applied to study the chemical nature of the intercalant in polyacetylene oxidized (doped) chemically with FeCl₃ and FeBr₃. For the (CH) _x/FeCl₃ system the Mossbauer lattice temperature (θ_M = 89 K) was estimated from the temperature dependence of the recoil-free fraction. The strong influence of the high Fe^III state of the dopant is clearly evidenced through EPR spectra of both systems: while the chloride system shows a superposition of a narrow and a broad lines, the bromide one exhibits only a narrow line, whose intensity decreases with increasing dopant concentration.     

Dopant-modulated pair interaction in cuprate superconductors

A comparison of recent experimental STM data with single-impurity and many-impurity Bogoliubov-de Gennes calculations strongly suggests that random out-of-plane dopant atoms in cuprates modulate the pair interaction locally. This type of disorder is crucial to understanding the nanoscale electronic inhomogeneity observed in BSCCO-2212, and can reproduce observed correlations between the positions of impurity atoms and various aspects of the local density of states such as the gap magnitude and the height of the coherence peaks. Our results imply that each dopant atom modulates the pair interaction on a length scale of order one lattice constant.     

The defect structure of calcia stabilized zirconia

Theoretical techniques have been used to examine the two models proposed for the defect structure of stabilized zirconias. The first model is based on simple clusters of dopant ions and the charge compensating oxygen vacancies, while the second suggests that fluorite-related microdomains form within the host lattice.

We show that the energies of formation of the clusters and microdomains are almost equal, the microdomain being favoured by 0.09 eV per dopant ion. Thus the calculations suggest that both point defects and microdomains may be present, with point defects predominating at low dopant concentration and higher temperatures.     

Solid electrochemical modification of semiconductors

It is shown that the properties of semiconductors can be modified by solid electrochemical cells. These cells can be used as dopant sources for introduction of impurities into the semiconductor lattice. The solid electrolyte is so chosen that the ionic conducting species are the desired dopants. The controllability of the doping operation is very sensitive and either a constant concentration or a specified concentration profile can be achieved. These cells can also be used to modify the semiconductor surfaces such that only limited penetration of impurities is achieved.