Optical study of an untwinned single crystal: ab-plane anisotropy

We report on the ab-plane polarized reflectance of an untwinned single crystal over the frequency range from 80 to (10 meV-4 eV) at temperatures between 10 and 300 K. We find a clear anisotropy in the ab-plane optical conductivity above and below , which is very similar to that formerly published data of (M.A. Quijada et al., Z. Phys. B 94, 255 (1994)). We employ both the one-component and two-component analyses to the optical data, which suggest that the normal-state infrared anisotropy of originates not only from the mass anisotropy, but also from the scattering rate anisotropy. Our results provide evidence that the electronic structures within the plane are anisotropic. In the superconducting state, there is a definite ab-plane anisotropy to the far-infrared absorption. This anisotropy could be due either to anisotropy of the superconducting gap or to anisotropy of the mid-infrared component to the conductivity. We also observe the superconducting condensate is anisotropic: The value of the superconducting penetration depth in the a-direction is slightly smaller than that along the b-axis. Received 16 July 1998     

The Rhodes-Wohlfarth parameter as assessment of the displacive degree in ferroelectrics: The case of the Ф4> model

The Rhodes-Wohlfarth parameter extended to ferroelectrics by Tokunaga [J. Phys. Soc. Jap. 57, 4275 (1988)] is here analyzed within the model. It is shown that it can be directly related with the displacive degree of the transition as described by the ratio C / E ₀ , between the non-local coupling, C, driving the transition and the depth of the energy well, E₀, associated with the distorted structure. However, the Rhodes-Wohlfarth parameter becomes asymptotically constant as C / E ₀ decreases, i.e. for systems closer to the order disorder limit. Under this viewpoint, the very limited range of values observed for this experimental parameter is explained and is shown that, in general, it can only assess quantitatively the character of the transition in rather displacive cases. The argument can be generalized to more complex systems, and when applied to well known materials, a rough estimation of the displacive degree and the relevant microscopic energetic parameters in rather displacive ferroelectrics is possible. Received 23 December 1998 and Received in final form 4 May 1999     

Unique ion beam scattering technique on depth profile determination

Abstract

By combination of energy and time of flight detection in ERDA or NRA measurement, the particles' masses can be determined, additionally to the depth information. This leads to unique depth profile determination even for complex targets. Combination with th concept of Jacobi transformations results in extremely fast measurements. In this paper, a way is shown how this concept can be realized even for accelerators ofenergies as low as about 1 MeV.     

Backscattering of light ions from the surfaces of inhomogeneous multicomponent amorphous materials

An analytic theory proposed in Ref. 1 [V. S. Sukhomlinov and é. N. Fafurina, Zh. Tekh. Fiz 65(4), 9 (1995); Tech. Phys. 40, 295 (1995)] for the backscattering of light ions by a solid surface is developed for the cases of multicomponent materials and materials in which the concentrations of some of its components vary with depth. Zh. Tekh. Fiz. 67, 17–21 (January 1997)     

Photoassociative spectroscopy of the long-range state

The photoassociative spectroscopy of the Cs₂ 0 g ^- long-range molecular state dissociating into the asymptote is performed, using cold cesium atoms in a vapor-cell magneto-optical trap (MOT). Vibrational levels from v =0 to v =132 are identified, and their rotational structure is well resolved up J =8 for levels below v =74. These data are analyzed in terms of the Rydberg-Klein-Rees (RKR) procedure, and correspond to 99.6% of an effective potential curve with a minimum at ? and a cm^-1 depth. Both ab initio calculations and simple model estimations predict a double-well structure for this potential curve, which cannot be reproduced presently by the RKR approach but which is confirmed by the presence of giant structures in the spectrum. The 1_u()long-range state is also observed for the first time in Cs₂.     

Correlation functions in the theory of atomic collision cascades: Ion location and the distribution in depth and size of damage clusters

Abstract

Simple depth distribution functions of ion bombardment damage predict the spatial extension of the cumulative damage caused by a beam of ions. Correlation functions need to be considered when more detailed information is desirable, such as the average size or depth of individual damage clusters, the average location of an ion within its damage cluster, and the fluctuations of these quantities. In this paper we establish an integral equation for the pair correlation function, coupling the individual ion range with the deposited energy. This pair correlation function determines the damage caused by all those ions that come to rest at a specific penetration depth. Solutions of the integral equation are found by standard methods. Explicit results are presented for elastic scattering governed by power cross sections. The depth distribution of damage clusters turns out to be significantly narrower than the gross damage distribution at all mass ratios except for M ₁ ? M ₂, and the size distribution appears insensitive to depth when measured perpendicular to the ion beam, but varying with depth when measured parallel. Predictions on ion location suffer from a surprizingly sensitive dependence on the scattering cross section. A note on the fluctuation of the sputtering yield by individual ions concludes the paper.     

Synthesis and microwave properties of TI2Ba2CaCu2O8 superconducting films grown by MOCVD

We report on the synthesis, structural and electrical characterization of high quality Tl₂Ba₂Ca₁Cu₂O₈ (Tl-2212) superconducting films. The samples have been grown ex-situ on mm² LaAlO₃ (100) substrates by a combined approach of metal-organic chemical vapor deposition (MOCVD) and thallium vapor diffusion. The morphological and compositional nature of the c-axis oriented films has been investigated by SEM and X-ray analyses. Typical values of K and MA/cm² at 77 K have been measured. Microwave measurements have been performed at f = 87 GHz inserting the film in a copper cavity and at f =1.5 GHz on patterned samples using a microstrip resonator technique. A penetration depth nm is evaluated by fitting the microwave data with phenomenological equations. The minimum value of the surface resistance measured at 4.2 K is 60 and 6 m at 1.5 GHz and 87 GHz respectively. The microwave data are described in the context of a modified two fluid model. An evaluation of the temperature dependence of the scattering rate has been performed through the simultaneous measurement of the surface resistance and the penetration depth. Received 16 December 1999 and Received in final form 17 March 2000     

Energy,fluence and temperature dependence of MeV nitrogen implantation profiles in steel

Abstract

1 to 2 MeV nitrogen (N⁺ and N₂ ⁺) ions were implanted at high fluences in stainless steel, and their depth distributions were measured subsequently by Rutherford backscattering and thermal neutron depth profiling. The range profiles were broader than theoretically expected. With increasing fluence, deviations from ballistic computer codes increase. These deviations can well be described by the assumption of radiation enhanced diffusion for which a simple analytical model is presented. The thermal mobility shows a different behavior for low, and for high implanted fluences.     

Trapped and free electrons in the near-anode region of a striated discharge

Spatial potential profiles and electron energy distribution functions are measured in the near-anode region of a striated neon glow discharge. It is discovered that potential wells of small depth adjacent to the anode appear on the spatial potential profiles at certain moments in time. The distribution functions measured in the potential wells have a pronounced maximum of slow electrons, which sharply distinguishes them from the distribution functions in the striation phases where there are no wells. The mechanism which shapes the electron distribution function for electrons trapped in a potential well is analyzed. A perturbing effect of the anode on the electron distribution function as the anode is approached is discovered experimentally, and an interpretation of this effect is given. Zh. Tekh. Fiz. 68, 25–32 (March 1998)     

Angular distributions of planar-channeled 4 MeV electrons

Abstract

A method of calculation of angular distributions of channeled electrons is proposed in the paper. The depth dependence of the angular distribution is investigated. At large penetration depths, the planar channeled particles are seen to spread widely parallel to the atomic planes, while the transverse motion is more confined.     

Application of mechanical scanning to ion implantation

Abstract

Atomic depth profiles from Be-implanted Si have been examined as a function of implant fluence and annealing, and the results have been correlated with theoretically calculated implantation induced damage profiles. The Be atomic depth profiles were obtained by secondary ion mass spectrometry (SIMS) techniques from samples implanted at 300 keV to fluences ranging from 2 × 10¹² to 10¹⁵ cm^?2. Subsequent to annealing at 600°C for 30 min, the Be SIMS profiles exhibited anomalous redistribution effects. The Be profiles obtained from the annealed samples had the same general features as the depth distribution of implant energy deposited into damage, based on Brice's¹ calculations. The correlation of the SIMS atomic profiles and the theoretical damage profiles indicated that Be “decorates” the implantation induced damage regions while redistributing during the annealing process.     

Vortex structure in the presence of tilted columnar defects

It is argued that vortices in layered superconductors will be trapped by tilted columnar defects even when the external magnetic field is oriented along the c axis. For such tilted, trapped vortices the interaction at long distances becomes attractive in some directions. This must result in the formation of vortex chains with an intervortex distance of the order of the London penetration depth. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 6, 507–511 (25 September 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Surface-type waves on the boundary of a metal with a plasma-molecular medium

The influence of the molecular subsystem on the properties of surface-type waves (STW’s) propagating along a plasma-metal boundary is examined with consideration of the thermal motion of the electrons. The dynamics of the molecular subsystem is described using the equation for the polarization vector, which is equivalent to a quantum-mechanical treatment of a rarefied gas with phenomenological consideration of the dissipation. A dispersion equation for surface-type waves is obtained. The molecular subsystem influences both the phase velocity of the waves and the penetration depth. In the case of a weakly ionized medium there is a forbidden frequency band for surface-type waves. Zh. Tekh. Fiz. 67, 47–49 (December 1997)     

Sodium profiles in β″-alumina crystals: Modifications induced by argon bombardment

Abstract

Sodium depth profiles in implanted sodium β″-alumina single crystals have been measured by the nuclear resonance technique. A systematic investigation of the depth profile modifications as function of the implanted ion energy has been done using argon-ion (E = 50–600 keV) irradiation at fixed dose (Φ = 4 × 10¹⁶ions/cm²) and beam current (I = 1 μA/cm²). Argon doses were checked by Rutherford backscattering spectrometry. The changes in the sodium profiles are discussed in terms of transport equations which include three main processes: radiation enhanced transport, electric field assisted migration, and preferential surface sputtering of the alkali element. Special attention is devoted to the discussion of sputtering processes.     

Anisotropy inc-axis oriented YBa2Cu3O7−δ

Muon spin relaxation (μSR) data taken at LAMPF on ac-axis oriented fine powder sample of YBa₂Cu₃O_7−δ (YBCO) embedded in epoxy are analyzed for relaxation rate anisotropy. Clear differences beyond simple magnetic field penetration depth anisotropy are observed forB‖c andB c. The low-temperature anisotropy ratio is consistent with oriented ceramic data. Small crystallite size and anisotropic flux pinning characteristics are suggested as the fundamental cause of the additional effects.     

Structural study of thermal-oxide films on silicon by cathodoluminescence

A study of cathodoluminescence spectra of silicon oxide films grown thermally on silicon is reported. It has been established that the cathodoluminescence properties of thermal films are nonuniform in depth and depend on the growth conditions and characteristics of the silicon substrate. Fiz. Tverd. Tela (St. Petersburg) 40, 1984–1989 (November 1998)     

Specific features in the temperature dependence of photoluminescence from CdTe/ZnTe size-quantized islands and ultrathin quantum wells

A study has been carried out of the temperature dependences of luminescence spectra on a large number of CdTe/ZnTe structures differing in average thickness, 〈L _z〉=0.25–4 monolayers (ML), and CdTe layer geometry (continuous, island type). The influence of geometric features in the structure of ultrathin layers on linewidth, the extent of lateral localization of excitons, their binding energy, and exciton-phonon coupling is discussed. It is shown that in island structures there is practically no lateral exciton migration. The exciton-phonon coupling constant in a submonolayer structure has been determined, Γ_ph=53 meV, and it is shown that in structures with larger average thicknesses Γ_ph is considerably smaller. Substantial lateral exciton migration was observed to occur in a quantum well with 〈L _z〉=4 ML, and interaction with acoustic phonons was found to play a noticeable part in transport processes. It has been established that the depth of the exciton level in a quantum well and structural features of an ultrathin layer significantly affect the temperature dependences of integrated photoluminescence intensity. Fiz. Tverd. Tela (St. Petersburg) 41, 717–724 (April 1999)     

Inorganic membrane elaboration using supercritical fluids

Abstract

New techniques to modify inorganic membranes have been developed using hydrolytic decomposition of titanium isopropoxide in supercritical propan-2-01. Solid anatase particles of about 30 nm sized are deposited as a thin film on the surface and in the pores of alumina supports. In the semi-continuow one flux method, a TiO₂ anatase film with thickness between 1 and 4 urn and an infiltrated zone of 15 to 40 in depth were formed. Pore size was found around 3 nm and correlatively, the permeability was divided by a factor 2 to 5. Furthermore, the He₂/N₂ selectivity of modified membranes is higher than that calculated from Knudsen diffusion model. In the two fluxes method, the effects of reactant concentration and reaction time have been investigated. The film thickness and the penetration depth increase when raising the concentration. Finally, the reaction of TiO₂ formation are shown to be heterogeneous in nature.     

Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure RF glow discharges

Abstract

Using secondary ion mass spectrometry (SIMS) the penetration of deuterium into Si(100) substrates as a result of exposure to deuterium low pressure rf discharges has been determined as a function of exposure time, thermal contact of the Si wafers to the substrate electrode, substrate doping, and discharge pressure. For undoped (100) single crystal Si exposed without intentional heating to a 25 m torr D₂ plasma for 1 min the deuterium concentration in the near-surface region (0—30 nm) approaches 10²¹ at.cm^?3. It drops off with depth, but is still greater than 10¹⁷ at.cm.^?3 at a silicon depth of 200 nm. The large penetration depth, the observation that lowering the substrate temperature decreases the rate of deuterium uptake, and the dependence of deuterium penetration on the substrate doping type indicate that hydrogen diffusion is of primary importance. The presence of a 50 nm thick oxide layer on the Si substrate during plasma exposure lowers the deuterium near-surface concentration in the Si substrate by about three orders of magnitude, while the presence of 10 nm of thermal oxide reduces the deuterium uptake only insignificantly. Heavily B and As doped polycrystalline Si show less deuterium penetration, while undoped polycrystalline Si shows more deuterium uptake than undoped single crystal Si for the same plasma treatment.     

Depth profile measurements of copper in silicon by ion-induced x-ray emission

Abstract

Distributions of axially channeled electrons are calculated at large depths as a function of angular momentum and transverse energy. Due to the influence of multiple scattering the electron distributions become independent of the angular momentum at a depth, where the statistical equilibrium is reached. Furthermore, the flux-peaking effect for negative particles is discussed.