偶氮染料掺杂高分子薄膜的光谱和光存储性质研究

利用旋涂法,制备了以二乙基胺基〖Ｎ（ＣＨ２ＣＨ３）２〗作为推电子基因、以具有强电负性的羧基（ＣＯＯＨ）作为拉电子基团的推－拉型偶氮染料掺杂的高分子（ＰＭＭＡ）薄膜。在室温下测试了该偶氮染料在溶液和薄膜态的吸收光谱、薄膜态的反射光谱和透过光,发现该薄膜在４００～５５０ｎｍ波长范围内具有强的吸收。在５１４．５ｎｍ光盘静脉测试仪上测试了膜片的静脉光存储性能,结果表明,用低功率Ａｒ＾＋激光（５１４．５ｎ     

Effect of Oxygen on the Conductive Properties of Thin Films of Nonconductive Polymer

Physics of the Solid State - The influence of the atmosphere on the electrical conductivity of polydiphenylenephthalide (PDP) films included in the ITO–PDP–Sb sandwich structure is...     

Spectral-Luminescent and Lasing Properties of Aminocoumarin Derivatives in Thin Polymer Films

The absorption and fluorescence spectra and the lasing ability of aminocoumarin derivatives in thin polymer layers (0.5–0.8 μm) based on the copolymer methylmethacrylate with a methacrylic acid and the copolymer methylmethacrylate with glycidylmethacrylate formed by coating of optically transparent glass substrates have been studied. It is found that the intensity of absorption and luminescence as well as the lasing resource of coumarins are determined by the structure of the latter and by the nature of the polymer medium. Compositions based on the copolymer methylmethacrylate with glycidylmethacrylate and aminocoumarin derivatives with a fluorized methyl group at the 4th molecular position can be of interest in optical technologies (light transformers, amplifiers). __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 464–467, July–August, 2005.     

ZnO薄膜的光学性质研究

采用直流反应磁控溅射方法在玻璃基底上成功地淀积ｃ轴取向性好的ＺｎＯ薄膜。经过优化计算，获得并分析了不同氧分压下制备的ＺｎＯ薄膜的折射率ｎ和消光系数ｋ的数值；同时得到了吸收光学带隙Ｅｏｐｔ，用能带模型解释了Ｅｏｐｔ的变化规律。     

Nonlinear Absorption Properties of nc-Si:H Thin Films

It is reported in this paper that the phenomenon of the saturated absorption of the exciton in hydrogenated nanocrystalline silicon (nc-Si:H) thin film fabricated by plasma enhanced chemical vapor deposition (PECVD) without any post-processing is observed at room temperature using pump-probe technology. This nonlinear optical absorption property is induced by the surface effect of the silicon nanoparticles in nc-Si:H thin films.     

退火对ZnO薄膜质量的影响

用金属有机化学气相沉积法（MOCVD）在蓝宝石（0001）衬底上制备了c轴取向的高质量的ZnO薄膜,通过在生长温度下氧气和氮气中退火处理的比较,研究了退火对ZnO薄膜结构和发光特性的影响。通过X射线衍射测量得知,经过氮气和氧气退火都可以使其002峰增强,且在氧退火中表现得尤为明显。光致发光测量发现氮气中退火的ZnO薄膜的紫外发光峰明显增强,而深能级发光峰明显减弱;而氧气中退火的ZnO薄膜的紫外发光峰略有减弱,而深能级峰显著增强。     

Cu掺杂ZnO薄膜的光学性质

采用射频反应磁控溅射方法,在Si(100)和石英基片上使用双靶溅射的方法制备了Cu掺杂ZnO薄膜。利用X射线衍射、透射光谱和光致发光光谱分析了薄膜的晶体结构及光学性质,并与密度泛函理论计算的结果进行了对比。研究结果显示:Cu掺杂ZnO薄膜均具有高的c轴择优取向,无Cu及其氧化物相关相析出,掺杂对晶格参数的影响较小,与理论计算结果一致。Cu掺杂显著改变了ZnO薄膜在近紫外及可见光波段的吸收特性,其光学带隙随着Cu掺杂量的增加有所减小,带隙宽度的变化趋势与理论结果有着很好的一致性。Cu掺杂显著降低了ZnO薄膜的发光效率,具有明显的发光猝灭作用,但并不影响光致发光的发光峰位。说明Cu掺杂导致的吸收特性的改变可能与杂质能级有关,这与能带结构计算发现的Cu-3d电子态位于价带顶附近的禁带中是一致的。     

Frequency Dependence of the Complex Conductivity of Thin Polymer Films

Technical Physics - A method to experimentally determine the components of complex thermal conductivity for thin polymer films has been developed. It is based on measuring the temperatures of both...     

Crystallization Kinetics of Lamellar Crystals Confined in Polymer Thin Films

We used dynamic Monte Carlo simulations to investigate the crystallization kinetics of flat-on lamellar polymer crystals in variable thickness films. We found that the growth rates linearly reduced with decreasing film thickness for the films thinner than a transition thickness d_t , while they were constant for the films thicker than d_t . Moreover, the mean stem lengths (crystal thickness) we calculated decreased with film thickness in a similar way to the growth rates, and the intramolecular crystallinities we calculated confirmed the film thickness dependence of the crytsal thickness. Besides, the crystal melting rates in thin films were calculated and increased with decreasing film thickness. We proposed a new interpretation on the film thickness dependence of the crystal growth rate in thin films, suggesting that it is dominated by the crystal thickness in terms of the driving force term (l–l _min) expressed by Sadler, rather than the chain mobility based on experiments. The crystal thickness can determine whether a crystal grows or melts in a thin film at a fixed temperature, indicating the reversibility between the crystal growth and melting.     

有机薄膜器件负电阻特性的影响因素

研究了影响有机染料掺杂聚合物薄膜器件负电阻特性的因素，为探索有机负电阻的机理提供实验依据。实验中制备了多种有机染料掺杂聚合物薄膜器件，研究了有机小分子染料、聚合物基体、薄膜组成及厚度、ITO和聚苯胺阳极等对有机染料掺杂聚合物薄膜器件负电阻特性的影响。在室温、大气环境下，所制备的多种有机染料掺杂聚合物器件在所加电压为3～4V时，观察到明显的负电阻特性，电流峰谷比最大约为8。负电阻现象及峰谷比的大小受膜厚和器件的结构、制备工艺等影响。提出用负电阻和二极管并联组成的等效电路模型解释影响负电阻特性的因素，认为负电阻特性与载流子的不平衡注入有关。在此基础上设计、合成了主链含唔二唑电子传输基团的可溶性聚对苯撑乙烯衍生物，该聚合物兼具空穴和电子传输功能，在空气中具有较稳定的N型负电阻特性。进一步控制相关材料和工艺条件，有可能得到易于控制的负阻效应，开发出新型的有机负电阻器件。     

退火对ZnO薄膜光学特性的影响

用射频磁控溅射法在蓝宝石衬底上制备出ZnO薄膜,通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了退火温度对ZnO薄膜结构和光学性质的影响。测量结果显示,所制备的ZnO薄膜为六角纤锌矿结构,具有沿c轴的择优取向;随着退火温度的升高,(002)XRD峰强度和平均晶粒尺寸增大,(002)XRD峰半高宽(FWHM)减小,光致发光紫外峰强度增强。结果证明,用射频磁控溅射法通过适当控制退火温度可得到高质量ZnO薄膜。     

Opto-Electronic Properties of MBE-Grown ZnSSe Thin Films on ITO Substrates

The opto-electronic properties of molecular-beam-epitaxy (MBE)-grown ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W and three orders of visible rejection power were demonstrated. The results of d.c. resistivity measurements revealed that the resistivity of the ZnSSe thin films decreased as the crystal size increases and reaches a value of 4.3 × 10¹¹ Ω cm for a thin film grown at the optimized substrate temperature of 290°C. The results of a.c. impedance measurements performed in the frequency range of 40 to 4000 Hz further indicated that the impedance of this alloy thin film can provide a good match with the liquid crystal layer of a liquid crystal light valve for UV imaging applications.     

Spectroscopic and Morphological Properties of Divinylbenzoxazolylbiphenyl Thin Films

The thin organic films based on 4,4′-bis-[(Z)-1-(1,3-benzoxazol-2-yl-2-ethenyl)]biphenyl and its partly fluorinated derivatives are studied. Absorption, luminescence, and excitation spectra, luminescence decay and film morphology were found to depend sensitively on the changes in molecule structure, nature and temperature of the substrate, as well as the thermovacuum deposition rate, being the origins of bad reproducibility of the optical properties of such films. Molecular aggregation with chromophore dipoles arranged parallel to each other has been observed in absorption and luminescence spectra. The fluorescence characteristics can be explained by the combination of radiation of aggregated and non-aggregated molecules. The main characteristics of the molecules under study are calculated using DFT approach. The unusual behaviour of photodegradation in fluorinated film is found.     

MnBiAl薄膜的磁光及磁性能研究

用真空电子束蒸发制备了MnBi_xAl_0.15薄膜.当0.4≤x≤0.7时,MnBi_xAl_0.15薄膜的Kerr角与MnBi_x薄膜相比有显著增大;而当x＞0.7时,MnBi_xAl_0.15的Kerr角则比MnBi_x的要不,633nm波长测量时,MnBi_{0.5Al0.15的Kerr角为2.75°,而相对应的MnBi0.5薄膜只有1.56°.MnBi05Al0.15薄膜的室温饱和磁化强度Ms为3×10⁵A/m,比MnBi0.5薄膜的Ms(4×10⁵A/m)要小.推测当0.4≤x≤0.7时,Al可能部分占据Bi空位和部分取代Mn位,由于晶格收缩使得Mn 3d电子与Bi 6p电子的杂化概率增大,从而导致其Kerr效应增强. 关键词：}     

Magnetic Properties of Exchange-Coupled Dual-Layer SmTbCo Thin Films

Exchange-coupled SmTbCo dual-layer media are prepared by an r.f magnetron sputtering system and their magnetic properties are investigated. The prepared SmTbCo dual layer is composed of a 340 emu/cm^3 TM-rich readout layer and a 5.80 kOe RE-rich memory layer, meeting the requirements of high saturation magnetization and large coercivity for hybrid recording. Through exchange coupling, the coercivity of the high-saturation- magnetization SmTbCo layer is greatly enhanced from 1.85 to 5.96 kOe. The calculated interface wall energy for Sm6.65Tb12.35Co81 （20nm）/Sm1.22Tb42.16Co56.62 （20hm） is about 3.85erg/cm62. The reversal magnetization of the SmTbCo exchange-coupling dual-layer films is analysed based on a micro-magnetic model.     

红荧烯薄膜生长及稳定性的研究

利用原子力显微镜研究了二氧化硅衬底上红荧烯薄膜的生长及稳定性。在较低沉积速率下,较低衬底温度时,红荧烯分子有充足的扩散时间,利于薄膜的横向生长,形成连续性、均匀性较好的薄膜。快速蒸镀及较高衬底温度使红荧烯薄膜转变为纵向生长模式,形成团粒状岛。横向生长的红荧烯薄膜在退火和空气中表现为亚稳特性,随着退火温度的升高和空气中放置时间的延长,红荧烯分子会自发地进行质量传输,发生纵向转移,转变为团粒状岛。获得了二氧化硅界面上红荧烯薄膜的生长及亚稳定机制模型。研究结果证明红荧烯分子与二氧化硅界面之间的作用力小于红荧烯分子间的作用力。     

Effect of Polymer-Substrate Interactions on the Surface Morphology of Polymer Blend Thin Films

Surface structures and compositions of poly(Styrene-block-Ethylene/Butylene-block-Styrene) (SEBS)/Poly(Methyl Methacrylate) (PMMA) blend films have been studied by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). Substrates with different hydrophobicity and SEBS with and without Maleic Anhydride (MA) grafting were used to study the effect of polymer-substrate interactions. It is indicated that the surface energy of the substrate (substrate/air) plays a crucial role on the surface composition of the polymer component. For a fixed surface, the adsorption of polymer on the substrate is also important. The hydrophilic sites of SEBS-g-MA can prevent the dewetting of the SEBS-g-MA from the substrate. The dewetting of PMMA from the SEBS-g-MA will make the PMMA protrusions more pronounced, and the SEBS-g-MA phase domains are enlarged after annealing treatment. An adsorption scheme is suggested to explain the phase inversion and height difference observed in the various polymers used. In addition, SEBS triblock copolymers form wormlike and meshlike microphase separation morphologies on the hydrophilic and hydrophobic substrates, respectively.     

Growth Rates of Edge-on Lamellar Crystals Confined in Polymer Thin Films

The growth rates of edge-on lamellar polymer crystals in variable thickness films were investigated in terms of dynamic Monte Carlo (MC) simulations. The growth rates linearly decreased with decreasing film thickness for the thinner films and were nearly constant for the thicker films. The mean stem lengths (crystal thickness) were also constant in different thickness films. The crystal widths parallel to the film thickness increased more slowly with increasing film thickness in the thinner films than that in the thicker films, indicating they were restrained by the film thickness. We propose that the growth rate of edge-on lamellar crystals in thin films is dominanted by the crystal width in the thinner films and by the crystal thickness in the thicker films; the variation of the film thickness can change the three-dimensional shape of the crystal growth front, also affecting the growth rate of the edge-on lamellar crystal.     

厚度对未掺杂ZnO薄膜光谱性能的影响

X射线衍射光谱、拉曼光谱和紫外可见透射光谱技术是薄膜材料检测的重要技术手段。通过对薄膜材料光谱性能的分析,可以获得薄膜材料的物相、晶体结构和透光性能等信息。为了解厚度对未掺杂ZnO薄膜的X射线衍射光谱、拉曼光谱和紫外可见透射光谱性能的影响,利用溶胶-凝胶法在石英衬底上旋涂制备了不同厚度的未掺杂ZnO薄膜样品,并对薄膜样品进行了X射线衍射光谱、拉曼光谱和紫外可见透射光谱的检测。首先,通过X射线衍射光谱检测发现,薄膜样品呈现出（002）晶面的衍射峰,ZnO薄膜为六角纤锌矿结构,均沿着C轴择优取向生长,且随着薄膜厚度的增加,衍射峰明显增强,ZnO薄膜的晶粒尺寸随着膜厚的增加而长大。利用扫描电子显微镜对薄膜样品的表面形貌分析显示,薄膜表面致密均匀,具有纳米晶体的结构,其晶粒具有明显的六角形状。通过拉曼光谱检测发现,薄膜样品均出现了437 cm-1的拉曼峰,这是ZnO纤锌矿结构的特征峰,且随着薄膜厚度的增加,其特征拉曼峰强度也增加,进一步说明了随着ZnO薄膜厚度的增加,ZnO薄膜晶化得到了加强。最后,通过紫外可见透射光谱测试发现,随着膜厚的增加,薄膜的吸收边发生一定红移,薄膜样品在可见光区域内的透过率随着膜厚度增加而略有降低,但平均透过率都超过90%。通过对薄膜样品的紫外-可见透射光谱进一步分析,估算了薄膜样品的折射率,定量计算了薄膜样品的光学禁带宽度,计算结果表明：厚度的改变对薄膜样品的折射率影响不大,但其禁带宽度随着薄膜厚度的增加而变窄,且均大于未掺杂ZnO禁带宽度的理论值3.37 eV。进一步分析表明,ZnO薄膜厚度的变化与ZnO晶粒尺寸的变化呈正相关,本质上,吸收边或光学禁带宽度的变化是由于ZnO晶粒尺寸变化引起的。