Dislocation emission from interphase boundaries in deformed nanocomposites

A theoretical model for emission of lattice dislocations from small-angle interphase boundaries characterized by both orientational and dilatational misfit in deformed nanocomposites is proposed. With allowance for the free surface of the material, the forces acting upon the dislocation structures of the interphase boundaries are calculated, through which the dependences of the critical shear stress for dislocation emission on different parameters of the boundary are found. It is shown that the influence of dilatational misfit and proximity of the interphase boundary to the free surface on dislocation emission is insignificant. It is established that the ability of interphase boundaries to emit dislocations is not uniform: emission of certain dislocations is facilitated as compared to ordinary small-angle grain boundaries, while emission of other dislocations may be inhibited.     

Atomic-Scale Structure and Chemistry of Segregation at Matrix/Precipitate Heterophase Interfaces

We study experimentally the local chemistry and atomic structure of heterophase interfaces on an atomic scale. In this work, the heterophase precipitate/matrix interfaces of small molybdenum nitride precipitates in an -iron matrix are investigated on a subnanometer scale by 1-dimensional atom-probe field-ion microscopy (1D-APFIM) and 3-dimensional atom-probe microscopy (3DAPM). Molybdenum nitride precipitates are generated by annealing Fe- 2 at.% Mo- X, where X = 0.4 at.% Sb or 0.5 at.% Sn, at 550°C, in an ammonia/hydrogen atmosphere. Internal nitridation at this temperature produces thin, coherent platelet-shaped molybdenum nitride precipitates. 1D-APFIM selected area analyses are efficient in determining the composition of the precipitates and it is found that a possible Sn or Sb segregation at coherent matrix/precipitate interfaces is either nonexistent or below the detection limit of 1D-APFIM. 3DAPM analyses, however, provide significantly better counting statistics and detect a small, but significant segregation of Sb at the matrix/precipitate interface with a Gibbsian interfacial excess of 0.30 ± 0.15 nm^–2. This is in distinct contrast to the segregation behavior of Sn or Sb at the interfaces of semicoherent coarse precipitates produced by internal nitridation at 600°C, for which much larger Gibbsian interfacial excesses of Sn or Sb, up to 7 ± 3 nm^–2, have been measured. In contrast, the thin platelets are either coherent or have significantly fewer misfit dislocations than is geometrically necessary for a full compensation of the lattice parameter misfit between precipitate and matrix. This demonstrates that Sn or Sb segregation with an appreciable Gibbsian interfacial excess is related to the presence of misfit dislocations at the interfaces of the coarse precipitates.     

HRTEM and HAADF-STEM tomography investigation of the heterogeneously formed S (Al2CuMg) precipitates in Al–Cu–Mg alloy

The distribution of variants and three-dimensional (3D) configurations of the heterogeneously formed S (Al₂CuMg) precipitates at dislocations, grain boundaries and the Al₂₀Cu₂Mn₃ dispersoid/Al interfaces were studied in this research. By means of high resolution transmission electron microscopy, we systematically investigated the orientation relationships (ORs) between these heterogeneously formed S precipitates and the Al matrix, and further unraveled that the preferred orientation of S variants at grain boundaries and at dispersoid/Al interfaces are respectively associated with the OR between the precipitate habit plane and the grain boundary plane, and the OR between the precipitate habit plane and the interface plane. The inherent characteristic of the crystal structure of the S phase, i.e. the symmetry of the pentagonal subunit, was considered to be the fundamental factor determining the preference of the variant pair. By using high angle annular dark field scanning transmission electron microscopy tomography, we successively obtained the 3D reconstruction of the S precipitates at these defects. Both the morphology of an individual S precipitate and the overall configuration of the S precipitates nucleated at these defects can be clearly observed without misunderstandings induced by the overlap and projection effects of the conventional two-dimensional methods.     

Helium trapping at dislocations,precipitates and grain boundaries

Helium bubble formation was observed in austenitic stainless steels by transmission electron microscopy following implantation of 30 to 1000 appm helium at room temperature and annealing at 700 to 800°C. Helium bubble distributions at dislocations and at various grain boundaries and precipitates were studied. It was found that interfacial dislocations play a dominant role in bubble nucleation at grain and interphase boundaries but not at Tic-matrix interfaces. Particularly high trapping of helium was observed at Tic precipitate-matrix interfaces which is attributed to an inhomogeneous ripening mechanism.     

Microdeformation behaviour of Al–SiC metal matrix composites

The satisfactory performance of metal matrix composites depends critically on their integrity, the heart of which is the quality of the matrix-reinforcement interface. The nature of the interface depends in turn on the processing of the MMC component. At the micro-level, the development of local concentration gradients around the reinforcement can be very different according to the nominal conditions. These concentration gradients are due to the metal matrix attempting to deform during processing. This plays a crucial role in the micro-structural events of segregation and precipitation at the matrix-reinforcement interface. Equilibrium segregation occurs as a result of impurity atoms relaxing in disordered sites found at interfaces, such as grain boundaries, whereas non-equilibrium segregation arises because of imbalances in point defect concentrations set up around interfaces during non-equilibrium heat treatment processing. The amount and width of segregation depend very much on (a) the heat treatment temperature and the cooling rate, (b) the concentration of solute atoms and (c) the binding energy between solute atoms and vacancies. An aluminium–silicon–magnesium alloy matrix reinforced with varying amounts of silicon carbide particles was used in this study. A method of calculation has been applied to predict the interfacial fracture strength of aluminium, in the presence of magnesium segregation at metal matrix interface. Preliminary results show that the model succeeds in predicting the trends in relation to segregation and intergranular fracture strength behaviour in these materials. Microhardness profiles of reinforced and un-reinforced aluminium alloys are reported. The presence of precipitates at alloy-reinforcement interface identified by Nano-SEM.     

Molecular dynamic simulation of the CsCl–Al2O3 interface

The interface between solid cesium chloride and α-aluminum oxide was simulated by molecular dynamics technique. It was shown that due to a misfit between lattices of the components the interfacial contact may be presented as a small-angle boundary saturated with dislocations. Also a domain structure is formed. The dislocations and interdomain boundaries act as a source of defects and give rise to the total ionic mobility along the interface and boundaries. According to the calculation at a temperature of nearly 70% of the melting point, the diffusion coefficients of ions along misfit dislocation cores and domain walls, ∼ 10^– 6 cm²/s, are only an order of magnitude lower than the corresponding values for molten salts.     

Accommodation of the Lattice Mismatch at the VCx-WC Interface

A VC doped WC-Co alloy is investigated using high resolution transmission electron microscopy. The VC grain growth inhibitor induces the presence of a thin layer on the surfaces of the WC grains in contact with Co and precipitates in the corners of Co pockets. These (VW)C_x compounds adopt an epitaxial orientation relationship with regards to the (0001) base facets of the WC crystals. Due to the small difference in lattice parameters, misfit dislocations are expected in the interfaces. Unlike the thin layers where no defects are observed, two kinds of dislocations are pointed out for larger precipitates. 1/6〈112〉_VC interfacial dislocations are sometimes present while more often 1/2〈1¯10〉_VC dislocations lying above the interface in the (VW)C_x phase are visible.     

Atomic-scale study of precipitates (NbC and Cu-rich phase) at the twin boundary in the long time ageing austenitic stainless steel

ABSTRACT

Microstructures of Cu-rich phases and NbC precipitated phases have been studied in a long time ageing austenitic stainless steel by high resolution scanning transmission electron microscopy. The interaction difference between the twins and the second phases found to be dependent on the nature of the precipitates. The Cu-rich phases were identified to be twinned at the twin boundary. Nevertheless, the NbC precipitates not only twinned at the twin boundary but also induced the twin boundary bypass them. A particle size dependence of the generation of misfit dislocations also was detected at interface between precipitates and the austenitic matrix.     

晶体相场法模拟异质外延过程中界面形态演化与晶向倾侧

采用晶体相场模型研究了异质外延过程中失配应变与应力弛豫对外延层界面形态演化的影响, 并对由衬底倾角引起的外延层晶向倾侧进行了分析.研究结果表明: 在有一定倾角的衬底晶体上进行外延生长时,若衬底和外延层之间失配度较大 (ε>0.08),外延层中弹性畸变能会以失配位错的形式释放, 最终薄膜以稳定的流动台阶形式生长且外延层的晶向倾角与衬底倾角呈近似线性关系. 而当衬底和外延层之间失配度较小(ε<0.04)不足以形成失配位错时, 外延层中弹性畸变能会以表面能的形式释放,最终使薄膜以岛状形态生长. 在高过冷度条件下,衬底倾角和失配度较大时,衬底和外延层之间会形成由大量位错规则排列而成的小角度晶界从而显著改变外延层的生长位向.     

Predicting the onset of rafting of γ′ precipitates by channel deformation in a Ni superalloy

The growth or shrinkage, normal to {001}, of the interfaces between the γ matrix and cuboidal γ′ precipitates is examined for a Ni-base superalloy, by considering the force acting on the interfaces. The force is produced by the precipitate coherency misfit and the stress produced by plastic deformation in channels of the γ matrix. A simple expression, which directly addresses the origin of the surface force, is given. The plastic deformation within the initially active γ matrix channels exerts the force to cause rafting. The subsequent activation of other types of channels also promotes the rafting in the same direction as the first active channels, when the plastic strain of the former channels increases. These issues are also discussed in terms of analysis based on those dislocations caused by the precipitate misfit and those produced by the plastic deformation.     

Analysis of Gibbsian Segregation at Heterophase Cu-MnO Interfaces

An alternative methodology to analyze Gibbsian segregation at heterophase interfaces with transmission electron microscopy (TEM) is presented and discussed. In this approach the actual concentration of the segregating element in a monolayer at the interface is obtained. This is in contrast to line scans or maps where the concentrations determined are a convolution of the concentration profiles with the electron probe and where for general interfaces the deconvolution problem can not be solved accurately. This is possible because the present approach uses explicitly the information offered by hetero-interfaces. The method is tested on the possible segregation of indium and gallium dissolved in a Cu matrix to interfaces between MnO precipitates and the Cu matrix. The occurrence of indium segregation is clearly demonstrated and the In concentration in the terminating Cu monolayer at the parallel {111} Cu/MnO interface is determined to be 15 ± 3 at.%, whereas the average In concentration in the Cu matrix is 3.8 ± 0.4 at.%. Further it was found that indium effectively blocks gallium segregation towards the oxide side of the interface. On the other hand, the presence of gallium does not influence the segregation of indium. Explanation for the gallium segregation at the oxide side relies on a thin spinel type Ga _x Mn _y O₄, which reduces the misfit at the metal-oxide interface.     

Secondary dislocation structures in a Ni–TiN system from the GMS and O-lattice theory

The preferred state in an interface is the key to evaluating misfit strain, especially for the interphase interfaces in secondary preferred state. The structure of good matching site (GMS) in a GMS clusters offers a guidance for the preferred state, especially for identifying the coincidence site lattice in two dimension for secondary preferred state and the Burgers vectors in a large misfit system. Here, we combine the GMS with O-lattice theory to calculate the secondary dislocation structure in the habit planes of the type II and III TiN precipitates in a Ni–TiN system. We find that under a slight elastic strain, the type III habit plane contains a single set of secondary dislocations, consistent with the experimental observation. The type II habit plane contains three sets of secondary dislocations, two of which can be relaxed to be nearly parallel and another of which may be invisible in diffraction contrast due to its short Burgers vector. The present study provides a reasonable interpretation to the observed interfacial dislocations, and also suggests Burgers vectors for the dislocations that are not determined experimentally.     

Interdiffusion in two-layer Pd/Ag films III. TEM investigation of diffusion-induced grain boundary migration

Diffusion-induced grain boundary migration (DIGM) is studied by the transmission electron microscopy method in polycrystalline two-layer Pd/Ag thin films with a grain size (100–2000 nm). In addition to the typical features of DIGM known for coarse-grained bulk objects and foils, new features are found which are caused by a quite dense network of triple junctions and by misfit dislocations: fast increase of grain boundary curvature and inclination; back motion of grain boundaries owing to recrystallization forces and termination of DIGM. Homogenization resulted from diffusion-induced migration of misfit dislocations is observed in addition to DIGM.     

Inhomogeneity of misfit stresses in nickel-base superalloys: Effect on propagation of matrix dislocation loops

It is shown experimentally that, during annealing and creep under low applied stresses, matrix dislocation loops frequently cross-glide. The periodic length of the zigzag dislocations deposited in the interfaces is equal to that of the γ/γ′-microstructure. Initially, the zigzag dislocations move in the (001) interface by a combination of glide and climb but then they stop near the γ′-edges and align along ?100?. Reactions of such dislocations lead to the formation of square interfacial networks consisting of ?100? oriented edge dislocations. The complex dislocation movement is explained by the inhomogeneity of the misfit stresses between γ- and γ′-lattices. The tensile components of the stress tensor drive the dislocations through the channel, whereas the shear components near the γ′-edges cause the zigzag movement and the ?100? alignment. The total effect is the most efficient relaxation of the misfit stresses. The results are relevant, especially for single-crystal superalloys of the newest generations, which have an increased γ/γ′-misfit due to the high level of refractory elements.     

Au/Cu(001)异质外延岛演化的分子动力学研究

利用分子动力学弛豫方法模拟了Au/Cu(001)异质外延生长初期Au异质外延岛的形貌演化，分析了Au外延岛演化过程中的局域应力及与基体结合能随表面岛尺寸的变化. 研究结果表明：当异质外延岛小于7×7时，外延岛原子分布呈现赝Cu点阵形貌；当外延岛达到8×8后，外延岛内开始出现失配位错，失配位错数量随外延岛尺寸的增加而增加. 局域压力分析指出，外延岛上原子之间的近邻环境不同导致了所受应力的差异，而外延岛的形变则是由外延岛原子的应力分布所决定. 研究还发现，失配位错的产生导致错位原子与基体原子之间的结合强度减弱，但相对增加了非错位原子与基体原子之间的结合强度. 关键词： 异质外延 表面形貌 局域压力 分子动力学模拟     

Adsorption of (S)-glutamic acid induces segregation of Ni at bimetallic Au/Ni surfaces

The adsorption of the catalytically important chiral modifier, (S)-glutamic acid, was investigated on bimetallic Ni/Au surfaces created by annealing thin Ni films on Au{1 1 1}. Reflection absorption infrared spectroscopy revealed that adsorption of (S)-glutamic acid at room temperature resulted in the immediate formation of pyroglutamate species on Ni-rich surfaces and the non-zwitterionic glutamic acid species on Au-rich bimetallic surfaces. For Au-rich bimetallic surfaces, TPD revealed that pyroglutamate is also formed on annealing. Medium energy ion scattering studies showed that significant adsorbate-induced Ni segregation was observed on Au-rich bimetallic surfaces – the driving force for segregation is likely to be the formation of nickel pyroglutamate. The implications of our findings for enantioselective catalysis are discussed.     

Heterophase dislocations — An approach towards interpreting high temperature grain boundary behavior

When the conditions of full thermodynamic equilibrium are added to the conventional linear elastic theory of dislocations a hybrid concept of “heterophase” dislocations arises. As developed here, heterophase dislocation theory provides a self-consistent method for calculating the core configuration, energy, and stress-strain field which minimize the thermodynamic potential of a dislocated crystal. Simple grain boundaries in crystals near the melting point are treated as constrained arrays of heterophase misfit dislocations with a liquid-like core phase similar to, but not identical with the properties of ordinary liquid phase. Measurements of the properties and behavior of {011&#x0304;} tilt boundaries in bismuth crystals near the melting point show that the new theory accounts accurately for the energetic dependence on tilt misorientation in the range 0° to 6°, and then deviates from the observed dependence. The new theory also permits prediction of a structural transition in grain boundaries which is extremely sensitive to the density of misfit dislocations. This transition, predicted to occur in bismuth at a tilt misorientation of 15° was also confirmed by hot-stage electron microscopy.     

Misfit dislocations in gold/Permalloy multilayers

Several groups have reported the misfit dislocation structures in Au/Ni_0.8Fe_0.2 multilayers where the lattice parameter misfit is very large. To explore the factors controlling such structures, molecular dynamics simulations have been used to simulate the vapour-phase growth of (111)-oriented Au/Ni_0.8Fe_0.2 multilayers. The simulations revealed the formation of misfit dislocations at both the gold-on-Ni_0.8Fe_0.2 and the Ni_0.8Fe_0.2-on-gold interfaces. The dislocation configuration and density were found to be in good agreement with previously reported high-resolution transmission electron microscopy observations. Additional atomic-scale simulations of a model nickel–gold system indicated that dislocations are nucleated as the first nickel layer is deposited on gold. These dislocations have an (a/6)?112? Burgers vector, typical of a Shockley partial dislocation. Each dislocation creates an extra {220} plane in the smaller lattice parameter nickel layer. These misfit-type dislocations effectively relieve misfit strain. The results also indicated that the dislocation structure is insensitive to the energy of the depositing atoms. Manipulation of the deposition processes is therefore unlikely to reduce this component of the defect population.     

Interface structure and radiation damage resistance in Cu-Nb multilayer nanocomposites

We use atomistic simulations to show that upon removal or insertion of atoms, misfit dislocations in Cu-Nb interfaces shift between two adjacent planes, forming pairs of extended jogs. Different jog combinations give rise to interface structures with unlike densities but nearly degenerate energies, making Cu-Nb interfaces virtually inexhaustible sinks for radiation-induced point defects and catalysts for efficient Frenkel pair recombination.     

Electrical activity of dislocations: Prospects for practical utilization

The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique (EBIC) in a scanning electron microscope. Clean misfit dislocations, i.e. no EBIC contrast, formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at 400° C to 1130° C from a back-side evaporated layer. Qualitative analysis of the electrical activity in relation to the energy levels anticipated for the clean or decorated dislocations is presented. Of particular interest is the case of defect-induced conductivity type inversion which occurred both at the top surface and at the buried dislocated interfaces of the multilayer. The prospects for using dislocations in a beneficial manner as active elements in electronic devices are discussed.