Immittance response of the SnO2-Bi2O3 based thick-films

The SnO₂-Bi₂O₃ based thick-film polycrystalline material is fabricated on alumina substrate via screen-printing technique. This material system is evaluated at various temperatures (35 °C≤T≤100 °C) using ac small-signal (immittance) measurements in the frequency range 10 Hz≤f≤10⁶ Hz. The simplistic analytical scenario for the immittance data employed the Cole-Cole empirical equation in conjunction with the estimation of the inspected input parameters. This is an alternate approach compared to the complex nonlinear least squares (CNLS) fitting procedure, and purely based on the appearance of the semicircular relaxation in the complex plane. It is found that the constituting components of the semicircular relaxation in the impedance plane are thermally activated indicating complexity in the grain boundary contributions despite the Debye and non-Debye relaxation responses. The possible degree of uniformity or non-uniformity in the grain boundary activity associated with its capacitance term observed via the Debye or non-Debye semicircular relaxation in the impedance (Z?) plane has been postulated.     

Complex capacitance in the representation of modulus of the lithium niobate crystals

The lithium niobate (LiNbO₃ or LN) single crystal is grown in-house. The ac small-signal electrical characterization is conducted over a temperature range 35≤T≤150 °C as a function of measurement frequency (10≤f≤10⁶ Hz). Meaningful observation is noted only in a narrow temperature range 59≤T≤73 °C. These electrical data when analyzed via complex plane formalisms revealed single semicircular relaxation both in the complex capacitance (C^?) and in the modulus (M^?) planes. The physical meaning of this kind of observation is obtained on identifying the relaxation type, and then incorporating respective equivalent circuit model. The simplistic non-blocking nature of the equivalent circuit model obtained via M^?-plane is established as the lumped relaxation is identified in the C^?-plane. The feature of the eventual equivalent circuit model allows non-blocking aspect for the LN crystal attributing to the presence of the operative dc conduction process. Identification of this leakage dc conduction via C^?-plane is portrayed in the M^?-plane where the blocking nature is removed. The interacting interpretation between these two complex planes is successfully presented.     

Complex impedance spectroscopy studies of (La0.70−xNdx)Sr0.30Mn0.70Cr0.30O3 (x≤0.30) perovskite compounds

The transport properties of Nd-doped perovskite materials (La_0.7−xNd_x)Sr_0.3Mn_0.7Cr_0.3O₃ (x≤0.30) were investigated using impedance spectroscopy techniques over a wide range of temperatures and frequencies. AC conductance analyses indicate that the conduction mechanism is strongly dependent on temperature and frequency. The DC conductance plots can be described using the small polaron hopping (SPH) model, with an apparent reduction of the polaron activation energy below the Curie temperature T_C. Complex impedance plots exhibit semicircular arcs described by an electrical equivalent circuit. Off-centered semicircular impedance plots show that the Nd-doped compounds obey to a non-Debye relaxation process. The conductivity of grains and grain-boundaries has been estimated. The activation energies calculated from the conductance and from time relaxation analyses are comparable. This indicates that the same type of charge carriers is responsible for both the electrical conduction and relaxation phenomena.     

Dynamics of relaxation processes in a triglycine selenate single crystal in a ferroelectric phase

The deviation of the relaxation spectrum from the Debye type is studied experimentally and the presence of the non-Debye relaxation is shown, which is defined in different temperature ranges either by proton multiposition transitions below the Curie point T _c or relaxation domain and interphase boundaries in the vicinity of T _c. For triglycine selenate, the methods of analysis of dielectric non-Debye spectra are used.     

Impedance response of polycrystalline tungsten oxide

Polycrystalline tungsten oxide (WO₃) pellets were prepared by conventional ceramic processing technology. The ac small-signal electrical data acquired in the frequency (f) range 100 Hz≤f≤1 MHz at temperature (T) ranging the 31-100 °C revealed distinct semicircular relaxation in the impedance plane. This relaxation indicates device behavior originating from the grain boundaries. The lumped grain impedance associated with the device action remained too small to detect when the large resistance scale is realized. The semicircular relaxation is thermally activated indicating 0.58 eV as the activation energy for the relaxation time.     

Dielectric relaxation and magnetic characteristics of the Bi0.5La0.5MnO3 ceramics

The complex permittivity ?* of ceramics of bismuth-lanthanum manganite Bi_0.5La_0.5MnO₃ has been measured in ranges of temperatures T = 10–200 K and frequencies f = 10²–10⁶ Hz. Clearly pronounced regions of the non-Debye dielectric relaxation have been revealed at low temperatures (T < 90 K). To describe them, the possible mechanisms have been proposed and discussed. The temperature dependences of magnetization, the anomalous behavior of which can be associated with the phase transition from the paramagnetic phase into the ferromagnetic phase occurring at T ～ 40–80 K, have been measured in the temperature range T = 10–120 K.     

Frequency–temperature response of CaBi4Ti4O15 ceramic prepared by soft chemical route: Impedance and modulus spectroscopy characterization

Polycrystalline CaBi₄Ti₄O₁₅ ceramic has been prepared through a modified chemical reaction technique. Room temperature X-ray diffraction (XRD) analysis shows the formation of a single phase orthorhombic perovskite structure. Simultaneous analysis of the complex impedance (Z1), and electric modulus (M1) spectroscopy was carried in the temperature range of 100–850 °C. The dielectric relaxation is found to be of non-Debye type. The Nyquist plot shows the negative temperature coefficient of resistance type behavior. Two different conduction mechanisms are may be due to: (a) the dielectric relaxation processes due to localized conduction associated with oxygen vacancy; and (b) the non-localized conduction corresponding to long range conductivity associated with extrinsic mechanisms fundamentally associated due to the chemical inhomogeneity caused due to the difference in the ionic environment of Ca²⁺ and Bi³⁺ and their sharing in the A site of perovskite and [Bi₂O₂]²⁺ slabs. Different conductivity components are recognized inside the grain: long range dc conductivity at low frequency region, a capacitive behavior at higher frequencies, and a universal power law behavior in an intermediate-frequency region where grain boundary contributions are neglected.     

Impedance and Modulus studies of the solid electrolyte system 20CdI2–80[xAg2O–y(0.7V2O5–0.3B2O3)], where 1 ≤x/y ≤ 3

In the present work, an evaluation of the transport properties of super ion conducting quaternary system 20CdI₂–80[xAg₂O–y(0.7V₂O₅–0.3B₂O₃)], where 1 ≤ x/y ≤ 3, in steps of 0.25, to study the effect of changing the modifier to former ratio on the conduction phenomena has been undertaken. Electrical conductivity measurements were made using complex impedance method. The electrical conductivity and conductivity relaxation of the system were studied in the temperature range from 303 K to 333 K and in the frequency range from 100 Hz to 10 MHz. The highest conductivity at room temperature is obtained for the system with modifier to former ratio 1.75. Impedance and modulus analyses had indicated the temperature independent distribution of relaxation times and the non-Debye behavior in these materials. The co-operative motion due to strong coupling between the mobile Ag⁺ ions is assumed to give rise to non-Debye type of relaxation. The silver ionic transport number (t_Ag+) obtained by the emf technique suggested the occurrence of silver ion conduction in the CdI₂-doped Ag₂O–V₂O₅–B₂O₃ system.     

Technical aspects of dielectric spectroscopy measurements of liquid crystals

The dielectric spectroscopy measurements were performed for antiferroelectric liquid crystalline mixture. For this purpose, the cells with ITO electrodes were prepared. It was found that it is not possible to detect some important relaxation modes in Sm A^*, Sm C^*, and Sm CA^* phases. The own cell mode (related to cell properties, i.e., capacity and resistivity) covers the dielectric response of liquid crystalline medium. Dielectric measurements in cells with gold electrodes were done to show all possible relaxations in antiferroelectric liquid crystals (LCs).     

Structural and ac electrical properties of a newly synthesized single phase rare earth double perovskite oxide: Ba2CeNbO6

A single phase rare earth double perovskite oxide Ba₂CeNbO₆ (BCN) is synthesized by solid-state reaction technique for the first time. The X-ray diffraction pattern of the sample at room temperature shows monoclinic structure, with the lattice parameters, a=5.9763 Å, b=5.975 Å and c=8.48 Å and β=90.04°. Impedance spectroscopy is used to study the ac electrical behavior of this material as a function of frequency (10²-10⁶ Hz) at various temperatures (30-450 °C). A relaxation is observed in the entire temperature range. Conduction mechanism is investigated by fitting the complex impedance data to Cole-Cole equation. Complex impedance plane plots show only one semicircular arc, indicating only the grain contribution of dielectric relaxation. The scaling behavior of imaginary part of electric modulus (M″) and imaginary part of electrical impedance (Z″) suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependence of conductivity is interpreted in terms of the jump relaxation model and is fitted to Jonscher's power law. The values of dc conductivities extracted from the Jonscher power law varies from 2.79×10⁻⁷ to 3.5×10⁻⁵ Sm⁻¹ with the increase in temperature from 100 to 450 °C. The activation energies (0.37 eV) extracted from M″(ω) and Z″(ω) peaks are found to follow the Arrhenius law.     

Complex impedance spectroscopic analysis of Mn-modified Pb(Zr0.65Ti0.35)O3 electroceramics

The polycrystalline samples of Pb(Zr_0.65−xMn_xTi_0.35)O₃ (PZMT) (x=0, 0.05, 0.10, 0.15) were prepared by a high-temperature solid-state reaction technique. Detailed studies on the effect of compositional variation of manganese (Mn) on the electrical behavior (complex impedance Z*, complex modulus M*, electrical conductivity and relaxation mechanisms) of the PZMT systems have been carried out by a nondestructive complex impedance spectroscopy (CIS) technique at 400 °C. The Nyquist plots suggest that the grains only are responsible in the conduction mechanism of the materials. The occurrence of single arc in the complex modulus spectrum of all the compositions of Mn confirms the single-phase characteristics of the PZMT compounds, and also confirms the presence of non-Debye type of multiple relaxation in the material.     

Relaxation behavior of glassy selenium

The dynamics of the glass transition of amorphous selenium was investigated by using differential scanning calorimeter. The heat capacity data were analyzed applying the phenomenological Tool–Narayanaswamy–Moynihan (TNM) model in order to describe the relaxation behavior of a-Se. The TNM parameters were evaluated by fitting the enthalpic cycles and also one isothermal experiment. Furthermore, peak-shift method and several other methods of evaluating the TNM parameters were applied to confirm the results of curve fitting. The results are compared with the other published enthalpy and viscosity data, volume and enthalpy relaxation are compared on account of our previous mercury dilatometry measurements. We found out that the pre-exponential factor A and the apparent activation energy Δh^* of structural relaxation are similar for volume and enthalpy relaxation and Δh^* is very close to the activation energy of viscous flow.     

Modification of dielectric relaxations in sodium bismuth titanate with samarium doping

Na_0.5Bi_(0.5−x) Sm_xTiO₃ (NBST) ceramics with x=0.05, 0.1, and 0.15 are prepared through chemical route. The X-ray diffraction studies confirmed the formation of single phase. Dielectric measurements in the temperature region ranging from room temperature (∼30 °C) to 600 °C at different frequencies (10 kHz-1 MHz) showed anomalies at 130, 306, and 474 °C (at 10 kHz frequency) for x=0.05 sample. Other samples showed only two peaks. To establish the electrical nature of these relaxations, impedance measurements are done at different temperatures and frequencies. The relaxation time, obtained from both impedance and modulus data, is found to decrease with increase in temperature. The relaxations observed are of non-Debye type. Increase in samarium content increases the activation energy for relaxation.     

Relaxation polarizations: Strong and weak processes

It has been shown that the through conductivity can differently affect the frequency dependences of the dielectric loss tangent of dielectrics with relaxation polarization. According to this difference, the relaxations in dielectrics are divided into two types: strong and weak. In the case of strong relaxations, the frequency dependences of the imaginary part of the complex conductivity exhibit extrema. Strong and weak relaxations have been investigated in Debye and in non-Debye dielectrics in order to determine the boundary between these processes and explain the existence of relaxations of two types. It has been established that the relaxations in dielectrics can be separated because of the different ratios of the contributions to the polarization of dielectrics from the fast and relaxation polarizations. The corresponding data in the literature are reviewed and the data on the development of strong relaxations in heterogeneous dielectrics are reported.     

描述蠕变过程中内耗的四参量模型

实验表明:蠕变过程中的内耗兼有Maxwell二参量模型的性质和滞弹性三参量模型的性质。本文提出一个用以描述蠕变过程中内耗的四参量模型。由此模型推导出的内耗表达式为Q^-1=1/(ωτ₁)+△(ωτ₂)/(1+ω²τ₂²),式中ω为测量圆频率,τ₁和τ₂分别为粘弹性内耗和滞弹性内耗的弛豫时间,△为弛豫强度。这个内耗表达式可以满意地说明蠕 关键词：     

自由和随机介电弛豫

本文介绍一种傅里叶变换介电谱仪方法,它可简化解谱过程,并节省数据内存量,使用这台仪器证明了同一电介质样品在不同条件下自由或随机弛豫可出现于10⁶至10^-4s的时间范围,这和唯象理论的预言一致,弛豫时间与连接样品两个电极的测量电路的电阻R有关,大的R值给出开路弛豫时间,小的R值导致短路极限,开路弛豫时间比短路值可以大10⁶倍,给出了从开路到短路情况复介电常数频域谱的变化。     

Colossal permittivity in (Li + Nb) co-doped Fe2O3 ceramics

(Li + Nb) co-doped (Li + Nb)_xFe_2-xO₃ (with x = 0.0005, 0.005, 0.05, and 0.1) ceramics were prepared by sol-gel method. Their structural, dielectric, humidity, and magnetic properties were investigated. Colossal permittivity (~10⁴) was approached or achieved in all doped samples even with a very small doping level of x = 0.0005. The colossal permittivity behavior is composed of two dielectric relaxations with the low-temperature one being a polaron relaxation due to electrons hopping between Fe³⁺ and Fe⁴⁺ ions and the high-temperature one being a Maxwell-Wagner relaxation caused by humidity-sensing properties.     

Piezoelectric effect and the long-term resistance relaxations induced by uniaxial compression in p-GaAs/AlxGa1−x as heterostructures

Long-term resistance relaxations induced by uniaxial compression in (001)p-GaAs/Al_0.5Ga_0.5 As heterostructures are observed, and the main properties of these relaxations are investigated: the dependence of their character on the direction of the uniaxial compression, the change in concentration of current carriers during the relaxation processes, and the quenching of the relaxations by temperature, illumination, and high electric fields. It is found that the character of the relaxation process is different for compression directions [110] and $[1\bar 10]$ : in the first case the concentration of two-dimensional holes in the quantum well decreases in the course of the relaxation, while in the second case it increases. A model is proposed in which the cause of the relaxations of the piezoresistance and the anisotropic character of these relaxations is assumed to be the piezoelectric field, the value of which, according to estimates, is |E _z| = 1.152 × 10⁴ V/cm per kbar.     

Detection of collective motions in dielectric spectra and the meaning of the generalized Vogel-Fulcher-Tamman equation

Based on the reduction property of dielectric spectra associated with the power-law function [∼(jωτ)^±ν] that appears in the frequency domain, one can develop an effective procedure for detection of different reduced motions (described by the corresponding power-law exponents) in temperature domain. If the power-law exponent ν is related to characteristic relaxation time τ by the relationship ν=ν₀ ln(τ/τ_s)/ln(τ/τ₀) (here τ_s, τ₀ are the characteristic times characterizing a movement over fractal cluster that is defined in Ref. [Ya.E. Ryabov, Yu. Feldman, J. Chem. Phys. 116 (2002) 8610]) and the simple temperature dependence of τ(T)=τ_A exp(E/T) obeys the traditional Arrhenius relationship, then one can prove that any extreme point figuring in the complex permittivity ε(jω) spectra (characterized by the values [ω_m, y(ω_m)]) obeys the generalized Vogel-Fulcher-Tamman (VFT) equation. This important statement confirms the existence of the ‘universal’ response (UR) (discovered and classified by Jonscher in frequency domain) and opens new possibilities in the detection of the ‘hidden’ collective motions in temperature region for self-similar (heterogeneous) systems. It gives also the extended interpretation of the VFT equation and allows one to differentiate collective motions passing through an extreme point. This differentiation, in turn, allows one to select the proper fitting function containing one or two (at least) relaxation times for the fitting of the complex permittivity function ε(jω) in the limited frequency domain. This conclusion can allow for the classification of dielectric spectroscopy as the spectroscopy of the reduced (collective) motions, which are described by different power-law exponents on the mesoscale region. The verification of this approach on available DS data (poly(ethylene glycol)-based-single-ion conductors) completely confirms the basic statements of this theory and opens new possibilities in general classification of different motions that can be detected in the analysis of the different dielectric permittivity spectra.     

Optical properties of Nb3Sn: A probe of the electronic density of states

An expression for the conductivity of an impure metal is derived in a simple manner in terms of a frequency dependent relaxation time τ. This method involves perturbation theory and an (ωτ)^?1 expansion but is shown to agree with a rigorous treatment. The infrared absorptivity of the A-15 material Nb₃Sn is calculated and it is found that optical properties will give direct information about the electronic density of states.